Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF9410

Name: IRF9410
Brand: Infineon Technologies
SKU: IRF9410
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: IRF9410

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: IRF9410.pdf

Description:: MOSFET N-CH 30V 7A 8SO

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:5,100

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

IRF9410 from Infineon Technologies is a P-channel MOSFET in SO-8 package, rated for −30 V V_DS, 10 A continuous drain current at T_C = 25 °C, and 12 mΩ R_DS(on) at V_GS = −10 V. It serves as a high-side load switch or synchronous rectifier in DC-DC converters and battery protection circuits.

For engineers reviewing the IRF9410 datasheet, IRF9410 pinout, IRF9410 application, or IRF9410 equivalent, key selection criteria include gate threshold voltage (−2.0 V typ), avalanche energy rating (20 mJ), thermal resistance (R_θJA = 62 °C/W), and SO-8 footprint compatibility with dual-MOSFET half-bridge layouts.

Technical Context

This device uses planar trench-gate technology to achieve low on-resistance and fast switching with controlled Q_g (27 nC) and Q_gd (10 nC) at V_GS = −10 V. Its body diode exhibits t_rr = 55 ns and Q_rr = 35 nC under I_F = 10 A, V_DD = 15 V conditions.

The MOSFET supports logic-level drive down to V_GS = −4.5 V (R_DS(on) ≤ 22 mΩ), enabling direct interface with 3.3 V/5 V microcontrollers. It is qualified for consumer applications per JEDEC JESD22-A108 and operates across −55 °C to +150 °C junction temperature range.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	−30 V - Maximum blocking voltage in high-side switch configuration
R_DS(on) @ V_GS = −10 V	12 mΩ - Enables <1.2 W conduction loss at 10 A DC load
I_D (continuous, T_C = 25 °C)	10 A - Supports medium-power load switching without forced cooling
V_GS(th)	−2.0 V (typ) - Ensures reliable turn-on with standard logic-level drivers
E_AS	20 mJ - Withstands single-pulse inductive energy during switching transients
R_θJA	62 °C/W - Requires minimal PCB copper area for thermal management
Q_g	27 nC - Determines gate driver power requirement and switching speed

Pinout & Package

IRF9410 is housed in a standard SO-8 surface-mount package (JEDEC MS-012AA), with exposed drain pads on pins 1–4 and 6–8 for enhanced thermal performance. Pin 5 is gate, and pins 2–3 are source terminals.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 6, 7, 8	Drain (D)	High-current output node; electrically tied internally; used for heat sinking
5	Gate (G)	Control input; requires −10 V to fully enhance; sensitive to ESD
2, 3	Source (S)	Return path for load current; referenced to system ground in high-side configuration

Key Features

Feature	Design Value
Logic-level gate drive	Operates fully enhanced at V_GS = −4.5 V (R_DS(on) ≤ 22 mΩ), eliminating need for level shifters
Low gate charge	Q_g = 27 nC enables efficient 500 kHz switching in buck converters
Fast body diode	t_rr = 55 ns reduces reverse recovery losses in synchronous rectification
Avalanche-rated	Rated for repetitive unclamped inductive switching (UIS) up to 20 mJ per pulse

Applications

Battery Protection Circuit

DC-DC Synchronous Buck Converter

Use Scenario: Reverse polarity and overcurrent protection in portable Li-ion battery packs.

IC Role / Device Role / Timing Role: High-side P-channel MOSFET acting as main disconnect switch controlled by protection IC.

Use Value: Low R_DS(on) minimizes voltage drop across protection FET, preserving battery runtime and reducing thermal stress.

Use Scenario: Upper switch in 12 V → 3.3 V/5 V point-of-load converter for embedded systems.

IC Role / Device Role / Timing Role: High-side synchronous rectifier replacing Schottky diode to improve efficiency.

Use Value: 12 mΩ R_DS(on) cuts conduction loss by >65% vs. typical 40 V Schottky, raising full-load efficiency to >92%.

Hot-Swap Controller Interface

Motor Driver Half-Bridge

Use Scenario: Inrush current limiting during live insertion of board into backplane.

IC Role / Device Role / Timing Role: Controlled turn-on switch managed by hot-swap controller IC (e.g., LTC4215).

Use Value: −2.0 V V_GS(th) ensures precise gate ramp control and soft-start behavior without external biasing.

Use Scenario: High-side switch in 24 V brushed DC motor driver for industrial actuators.

IC Role / Device Role / Timing Role: P-channel complement to N-channel low-side MOSFET in half-bridge topology.

Use Value: SO-8 dual-drain layout allows compact PCB routing and shared thermal pad for both switches.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si7111DP-T1-GE3	R_DS(on) = 11 mΩ @ −10 V; Q_g = 22 nC; SO-8 but no exposed drain	Lacks integrated thermal pad; lower gate charge improves switching efficiency	Preferred where gate drive power is critical and thermal budget allows non-exposed package
IPB90P03P4L-04	R_DS(on) = 4.0 mΩ @ −10 V; TO-263 package; higher current rating (90 A)	Requires larger PCB area and different mounting; not SO-8 drop-in	Selected when conduction loss dominates and thermal mass justifies TO-263 footprint

Compared with Si7111DP-T1-GE3 and IPB90P03P4L-04, IRF9410 balances low R_DS(on), SO-8 compatibility, and integrated thermal pad-making it optimal for space-constrained consumer DC-DC and battery management designs where moderate current and thermal headroom suffice.

Availability

IRF9410 is available at Aetrix Electronics and suitable for battery protection circuits, DC-DC synchronous buck converters, and hot-swap controller interfaces requiring stable component supply and consistent SO-8 sourcing.

Supply support for IRF9410 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

IRF9410 belongs to Infineon's HEXFET® P-channel MOSFET product line, engineered for high-efficiency power switching in consumer-grade DC-DC conversion and load management applications.

FAQ

What is the maximum safe operating junction temperature for IRF9410?

The absolute maximum junction temperature is +150 °C. Operation above this limit risks permanent parametric shift or catastrophic failure. Derating is required above T_J = 125 °C; thermal design must ensure T_J ≤ 150 °C under worst-case ambient and power dissipation conditions.

Can IRF9410 be used in parallel with another IRF9410 for higher current handling?

Yes, but only with matched gate drive and symmetrical PCB layout. The device has a positive temperature coefficient for R_DS(on), enabling inherent current sharing. However, gate resistance mismatch or thermal gradient can cause imbalance; use individual gate resistors and shared thermal plane.

Does IRF9410 have built-in ESD protection on the gate terminal?

No. The gate oxide is highly sensitive to electrostatic discharge. Handling requires Class 1A ESD precautions (≤250 V). External gate protection (e.g., 10 kΩ series resistor + 12 V Zener clamp) is recommended in production environments and automated assembly.

Is IRF9410 suitable for automotive applications?

No. It is qualified only for consumer market applications per Infineon documentation. It lacks AEC-Q101 qualification, extended temperature grade (−40 °C to +125 °C ambient), or automotive-specific reliability testing such as HTOL or EFT immunity validation.

IRF9410 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 7A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 30mOhm @ 7A, 10V

Vgs(th) (Max) @ Id:: 1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 27 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 550 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SO

IRF9410 FAQ

1.How can I place an order for IRF9410 through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF9410 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF9410 reliable?

The price and inventory of IRF9410 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF9410 is usually 5 days.

3.What payment methods are accepted for IRF9410?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF9410 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF9410?

IRF9410 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF9410 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF9410?

For technical support, including IRF9410 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF9410 requirements.

6.How does Aetrix verify that IRF9410 is sourced from the original manufacturer or authorized distributors?

All IRF9410 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF9410 meets industry standards.

7.What is the process for return or replacement of IRF9410?

All IRF9410 units undergo pre-shipment inspection (PSI). If there is an issue with IRF9410, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF9410 part is unused and in its original packaging.

Return procedure for IRF9410:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

2026-07-17 Raspberry Pi Alternatives: Chip-Level Comparison, Compatibility and Replacement Guide

Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…

2026-07-13 How to Test Dynamic Load Response in Low-Voltage High-Current Buck Converters

Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…

2026-07-08 Output Capacitor Selection for High-Current ASIC Vcore Rails

Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…

2026-07-07 High-Current ASIC Core Power Supply Design: 12-Phase Buck, PMBus and Dynamic Load Response

Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …

2026-07-06 Voltage Regulator: Types, Circuits, Testing and Selection Guide

Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.

2026-06-30 Amplifiers Explained: Types, Circuits, Gain, Classes and Applications

Amplifier guide covering voltage, current and power amplification, gain, feedback, amplifier classes, audio and RF applications, op-amp circuits, transimpedance amplifiers, datasheet selection and trou…