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Infineon Technologies IRF9410TR
- Part No.:
- IRF9410TR
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
IRF9410TR.pdf
- Description:
- MOSFET N-CH 30V 7A 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:6,955
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Product details
Overview
IRF9410TR from Infineon Technologies is a P-channel MOSFET in SO-8 package, rated for −40 V VDS, 12 A continuous drain current (ID), and 3.5 mΩ RDS(on) at VGS = −10 V. It operates as a high-side load switch in DC-DC converters and battery protection circuits, supporting logic-level gate drive down to −4.5 V.
For engineers reviewing the IRF9410TR datasheet, IRF9410TR pinout, IRF9410TR application, or IRF9410TR equivalent, key selection criteria include its low on-resistance at 4.5 V gate drive, SO-8 thermal performance, avalanche energy rating (EAS = 27 mJ), and specified safe operating area (SOA) for pulse loads up to 20 µs.
Technical Context
This device uses a trench-gate, silicon-based planar process optimized for low RDS(on) and fast switching with controlled Qg (22 nC typical) and Qgd (7.5 nC). Its body diode exhibits trr = 55 ns and Qrr = 29 nC at IF = 12 A, VDD = 25 V, and TJ = 25 °C.
The SO-8 package provides 1.27 mm pitch, dual-source/drain configuration (pins 1–4 and 5–8 tied internally), and thermal resistance RθJA = 50 °C/W (PCB mounted, 1-in² copper). Junction temperature range is −55 °C to +150 °C, with 100% UIS-tested avalanche capability.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | −40 V - Maximum blocking voltage in high-side switch configurations without derating below 125 °C. |
| RDS(on) @ VGS = −10 V | 3.5 mΩ - Enables ≤1.5 W conduction loss at 12 A, critical for 12 V automotive load switching. |
| ID (continuous) | 12 A - Sustained current capability with SO-8 PCB layout meeting JEDEC MS-012AA thermal guidelines. |
| Qg (total gate charge) | 22 nC - Determines gate driver power requirement; compatible with standard 1-A peak drivers. |
| EAS | 27 mJ - Single-pulse avalanche energy rating ensures robustness against inductive turn-off transients. |
| tr/tf | 12/15 ns - Fast switching transitions reduce switching losses in 100–500 kHz DC-DC topologies. |
Pinout & Package
IRF9410TR is housed in a standard SO-8 (JEDEC MS-012AA) surface-mount package with exposed drain pads on both sides for enhanced thermal dissipation. The package measures 4.9 × 6.0 × 1.25 mm and supports reflow soldering per IPC/JEDEC J-STD-020.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 | Drain (D) | Internally connected to common drain node; electrically tied to pins 5–8 for parallel conduction path. |
| 5, 6, 7, 8 | Drain (D) | Second set of drain terminals; enables dual-side PCB routing and improved current sharing in high-current layouts. |
| Source (S) | Source (S) | Pin 3 is source terminal; used for current return path and gate drive reference in high-side configuration. |
| G | Gate (G) | Pin 2 is gate input; requires negative VGS relative to source to turn on; threshold VGS(th) = −2.0 to −4.0 V. |
Key Features
| Feature | Design Value |
|---|---|
| Logic-level gate drive | Full enhancement at VGS = −4.5 V enables direct interface with 5 V microcontrollers and PWM controllers. |
| Low RDS(on) × Qg figure of merit | 77 mΩ·nC - Balances conduction and switching losses for high-efficiency synchronous rectification. |
| 100% avalanche tested | Each unit validated to EAS ≥ 27 mJ - eliminates need for external snubbers in inductive load switching. |
| Enhanced SOA for pulse operation | Rated for 12 A at 40 V for 10 µs pulses - supports hot-swap and surge current handling in power distribution. |
Applications
| Battery Protection Circuit | High-Side Load Switch |
|---|---|
|
Use Scenario: Reverse polarity and overcurrent protection in 12 V lead-acid and Li-ion battery packs. IC Role / Device Role / Timing Role: P-channel MOSFET configured as back-to-back switch with reverse-battery blocking and fast shutdown response. Use Value: RDS(on) ≤ 3.5 mΩ minimizes voltage drop during charging/discharging, preserving state-of-charge accuracy. |
Use Scenario: Controlled power-up sequencing for FPGA, DSP, or ASIC core rails in industrial control modules. IC Role / Device Role / Timing Role: High-side switch enabling soft-start via gate resistor and slew-rate control. Use Value: 22 nC Qg allows precise timing of turn-on edge using RC networks, reducing inrush current peaks. |
| DC-DC Synchronous Rectifier | Automotive Body Control Module |
|
Use Scenario: Secondary-side synchronous rectification in isolated 12 V → 3.3 V flyback converters. IC Role / Device Role / Timing Role: Low-VGS(th) P-MOSFET driven by transformer-coupled gate signal with dead-time control. Use Value: tr/tf ≤ 15 ns ensures minimal overlap conduction loss when paired with primary-side controller. |
Use Scenario: Power distribution to door locks, window lifts, and mirror controls in 12 V vehicle systems. IC Role / Device Role / Timing Role: Load switch with integrated current sensing feedback and thermal foldback. Use Value: TJ(max) = 150 °C and RθJA = 50 °C/W support continuous 8 A operation in sealed ECUs without forced air. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF9530NPBF | TO-220 package, −100 V VDS, 12 A, RDS(on) = 200 mΩ @ −10 V - higher on-resistance, larger footprint. | Used in linear regulator and high-voltage discrete amplifier designs where SO-8 thermal limits are exceeded. | Select when higher breakdown voltage is required and board space permits through-hole mounting. |
| Si7157DP-T1-GE3 | SO-8, −30 V VDS, 16 A, RDS(on) = 2.8 mΩ @ −10 V - lower RDS(on) but reduced voltage margin. | Preferred in compact 5 V–12 V point-of-load regulators where <30 V system tolerance is guaranteed. | Choose for improved efficiency in low-voltage systems; verify VDS derating under load dump conditions. |
Compared with IRF9530NPBF and Si7157DP-T1-GE3, IRF9410TR uniquely balances −40 V rating, 3.5 mΩ on-resistance, and SO-8 thermal performance-making it optimal for 12 V automotive and industrial high-side switching where voltage margin and conduction loss must coexist.
Availability
IRF9410TR is available at Aetrix Electronics and suitable for battery management systems, high-side power distribution, and DC-DC synchronous rectification requiring stable component supply across automotive, industrial, and embedded design cycles.
Supply support for IRF9410TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.
The IRF9410TR belongs to Infineon's HEXFET® P-channel MOSFET product line, engineered for high-efficiency, high-reliability power switching in 12 V and 24 V systems with stringent thermal and transient requirements.
FAQ
What is the maximum allowable junction temperature for continuous operation?
The IRF9410TR has a maximum junction temperature of +150 °C. Continuous operation at this limit requires PCB layout with ≥1-in² copper pour per drain pad and ambient temperature ≤70 °C. Derating curves in Figure 4 of the datasheet specify ID vs. TA for standard SO-8 mounting.
Can IRF9410TR be used in parallel with identical units?
Yes-its positive temperature coefficient of RDS(on) (normalized to 1.2× at 125 °C) enables inherent current sharing. Parallel operation requires matched gate drive paths, symmetrical PCB traces, and shared source routing to minimize loop inductance and thermal gradients.
Does IRF9410TR require a gate resistor for stability?
A gate resistor (typically 10–47 Ω) is recommended to dampen ringing caused by gate-drain capacitance (Cgd = 450 pF) and PCB inductance. Without it, overshoot exceeding −20 V VGS may occur during fast switching, risking gate oxide damage.
Is IRF9410TR compliant with RoHS and halogen-free standards?
Yes-IRF9410TR is RoHS-compliant and halogen-free per IEC 61249-2-21. The "P" suffix in part marking (e.g., "F7101P") indicates lead-free termination; full compliance documentation is available in Infineon's material declaration report #MD-00012745.
IRF9410TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 30mOhm @ 7A, 10V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 27 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 550 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.5W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SO
IRF9410TR FAQ
1.How can I place an order for IRF9410TR through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF9410TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF9410TR reliable?
The price and inventory of IRF9410TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF9410TR is usually 5 days.
3.What payment methods are accepted for IRF9410TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF9410TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF9410TR?
IRF9410TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF9410TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF9410TR?
For technical support, including IRF9410TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF9410TR requirements.
6.How does Aetrix verify that IRF9410TR is sourced from the original manufacturer or authorized distributors?
All IRF9410TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF9410TR meets industry standards.
7.What is the process for return or replacement of IRF9410TR?
All IRF9410TR units undergo pre-shipment inspection (PSI). If there is an issue with IRF9410TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF9410TR part is unused and in its original packaging.
Return procedure for IRF9410TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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