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Infineon Technologies IRF9530NL

Part No.:
IRF9530NL
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-262-3 Long Leads, I2PAK, TO-262AA
Datasheet:
AetrixIRF9530NL.pdf
Description:
MOSFET P-CH 100V 14A TO262
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:6,438

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Product details

Overview

IRF9530NL from Infineon Technologies is a P-channel enhancement-mode power MOSFET in TO-262 (straight-leads, low-profile through-hole) package, rated for -100 V VDS, 0.20 Ω RDS(on) at VGS = -10 V, and -14 A continuous drain current at TC = 25°C. It features full avalanche rating (250 mJ single-pulse), 175°C max junction temperature, and fast switching (tr = 58 ns, tf = 46 ns), used in DC-DC synchronous rectification and high-side load switching.

For engineers reviewing the IRF9530NL datasheet, IRF9530NL pinout, IRF9530NL application, or IRF9530NL equivalent, key selection criteria include verified -100 V blocking capability, confirmed 0.20 Ω on-resistance under -10 V gate drive, thermal derating behavior (0.53 W/°C), body diode recovery performance (trr = 130–190 ns), and TO-262 mechanical compatibility with low-profile PCB layouts.

Technical Context

This MOSFET operates as a high-voltage, medium-current P-channel switch with integrated body diode optimized for unclamped inductive switching. Its gate threshold voltage (-2.0 to -4.0 V) enables direct logic-level drive from 5 V microcontrollers when paired with appropriate level-shifting or gate buffering.

The device uses HEXFET® process technology to achieve low RDS(on) per die area while maintaining rugged avalanche performance. Thermal design relies on case-to-heatsink conduction (RθJC = 1.9 °C/W), not ambient convection (RθJA = 40 °C/W on 1"² FR-4), making it suitable for heatsink-mounted industrial power stages.

Key Specifications

ParameterValue and Actual Design Meaning
VDS-100 V - supports 80 V nominal bus systems with 20% margin for transients
RDS(on)0.20 Ω @ VGS = -10 V - delivers ≤1.4 W conduction loss at -8.4 A DC load
ID (cont)-14 A @ TC = 25°C - requires heatsink for sustained >5 A operation above 70°C ambient
EAS250 mJ - withstands single inductive energy spikes without failure in motor drive snubbers
tr/tf58 ns / 46 ns - enables >100 kHz PWM switching with minimal overlap loss in half-bridge topologies
VSD-1.6 V @ IS = -8.4 A - body diode forward drop impacts synchronous rectifier efficiency below 100 kHz
Qg58 nC - determines gate driver current requirement (~11.6 mA avg for 500 ns turn-on)

Pinout & Package

IRF9530NL uses the TO-262 (I²PAK) package: straight-leaded, low-profile through-hole variant of the D2Pak, with 3.8 mm height and 10.6 mm × 10.2 mm footprint. Mounting torque: 10 lbf·in (1.1 N·m); soldering temp: 300°C for 10 s at 1.6 mm from case.

Pin/TerminalCircuit RoleDesign Meaning
G (Gate)Control electrodeAccepts -10 V to -20 V drive; 58 nC total charge requires robust gate driver
D (Drain)High-side power terminalConnected to negative rail or load return; carries full load current and avalanche energy
S (Source)Reference terminalBiased at system ground or positive rail; body diode anode for reverse conduction path

Key Features

FeatureDesign Value
P-channel enhancement modeEnables high-side switching without level-shifting circuitry in negative-rail systems
175°C maximum junction temperatureSupports operation in sealed enclosures or high-ambient industrial environments
Fully avalanche ratedGuarantees survivability during unclamped inductive turn-off events up to 250 mJ
Low-profile TO-262 packageReduces board height vs. TO-220 while retaining through-hole mechanical reliability
Lead-free (PbF) constructionComplies with RoHS Directive 2011/65/EU and JEDEC J-STD-020 reflow profiles

Applications

Motor Drive Half-BridgeIndustrial Power Supply OR-ing

Use Scenario: Bidirectional DC motor control using complementary P/N-channel half-bridge with freewheeling via body diode.

IC Role / Device Role / Timing Role: High-side P-channel switch controlling motor voltage polarity; body diode handles reverse current during PWM off-time.

Use Value: 0.20 Ω RDS(on) limits conduction loss to <1.5 W at 8.4 A; 250 mJ EAS absorbs inductive kickback during rapid direction reversal.

Use Scenario: Redundant 24 V DC power inputs to PLC backplane, where multiple supplies feed common bus.

IC Role / Device Role / Timing Role: Reverse-polarity protection and automatic source selection via P-channel MOSFET acting as ideal diode.

Use Value: -1.6 V VSD body diode drop replaced by 0.20 Ω channel resistance, cutting forward loss by >70% vs. Schottky solution at 5 A.

Telecom DC-DC ConverterAutomotive Body Control Module

Use Scenario: Isolated flyback secondary-side synchronous rectifier in 48 V telecom power system.

IC Role / Device Role / Timing Role: Synchronous rectifier replacing Schottky diode; gated by transformer-coupled signal referenced to output rail.

Use Value: 58 ns rise time ensures precise timing alignment with primary-side switch; -100 V rating accommodates reflected voltage spikes up to 85 V.

Use Scenario: High-side load switch for 12 V battery-fed lighting or solenoid circuits in vehicle door modules.

IC Role / Device Role / Timing Role: Controlled power delivery with soft-start and overcurrent detection via external sense resistor.

Use Value: TO-262 low profile fits tight Z-axis space behind door panel; -14 A rating supports 100 W incandescent loads with margin.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel high-voltage power switching applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IRF9540NLPbFVDS = -100 V, RDS(on) = 0.20 Ω (same), but ID = -17 A @ TC = 25°C and EAS = 320 mJHigher current handling and avalanche margin; same TO-262 footprint and pinoutSelect when >14 A peak load or >250 mJ transient energy is expected
STP9PF10VDS = -100 V, RDS(on) = 0.22 Ω @ VGS = -10 V, ID = -9 A, TO-220 packageLower current rating and different package; requires PCB redesign for mounting and thermal interfaceUse only if TO-220 is mandated and 9 A continuous rating suffices

Compared with IRF9530NL, IRF9540NLPbF offers higher current and avalanche capability in identical packaging, while STP9PF10 trades performance for legacy TO-220 compatibility-neither is a drop-in replacement without layout or thermal review.

Availability

IRF9530NL is available at Aetrix Electronics and suitable for industrial motor drives, telecom DC-DC converters, and automotive body control modules requiring stable component supply across multi-year production cycles.

Supply support for IRF9530NL includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

The IRF9530NL belongs to the HEXFET® Power MOSFET product line, designed specifically for high-efficiency, high-reliability power conversion and switching in harsh thermal and electrical environments.

FAQ

Is IRF9530NL suitable for logic-level gate drive?

No. Its gate threshold voltage range is -2.0 V to -4.0 V, but full enhancement requires -10 V VGS to achieve rated 0.20 Ω RDS(on). Driving with 3.3 V or 5 V logic alone results in high on-resistance (>1 Ω) and excessive heating. A dedicated gate driver or level shifter is required for reliable operation.

What is the maximum safe operating frequency for IRF9530NL?

Switching frequency is limited by thermal dissipation and gate drive capability-not intrinsic speed. With proper heatsinking and 1 A peak gate drive, it supports >200 kHz PWM in hard-switched topologies. However, above 100 kHz, body diode reverse recovery (trr = 130–190 ns) increases switching loss significantly in synchronous rectifier applications.

Can IRF9530NL replace IRF9530 in existing designs?

Yes, with qualification. IRF9530NL is the lead-free, low-profile TO-262 version of the legacy TO-220 IRF9530. Pinout and electrical specs are identical, but thermal resistance differs: RθJC is 1.9 °C/W (TO-262) vs. 2.5 °C/W (TO-220), improving heatsink coupling. Mechanical mounting and PCB footprint must be updated.

Does IRF9530NL require a gate resistor?

Yes. A series gate resistor (typically 10–47 Ω) is required to damp ringing caused by gate-drain capacitance (Crss = 170 pF) and parasitic inductance. Omitting it risks oscillation during switching transitions, leading to erratic behavior, increased EMI, and potential device failure due to localized hot spots.

IRF9530NL Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
HEXFET®
Package/Case:
TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging:
Tube
Product Status:
Obsolete
FET Type:
P-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
100 V
Current - Continuous Drain (Id) @ 25°C:
14A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
200mOhm @ 8.4A, 10V
Vgs(th) (Max) @ Id:
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
58 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
760 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
3.8W (Ta), 79W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-262

IRF9530NL FAQ

1.How can I place an order for IRF9530NL through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF9530NL on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF9530NL reliable?

The price and inventory of IRF9530NL are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF9530NL is usually 5 days.

3.What payment methods are accepted for IRF9530NL?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF9530NL transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF9530NL?

IRF9530NL orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF9530NL order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF9530NL?

For technical support, including IRF9530NL datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF9530NL requirements.

6.How does Aetrix verify that IRF9530NL is sourced from the original manufacturer or authorized distributors?

All IRF9530NL products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF9530NL meets industry standards.

7.What is the process for return or replacement of IRF9530NL?

All IRF9530NL units undergo pre-shipment inspection (PSI). If there is an issue with IRF9530NL, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF9530NL part is unused and in its original packaging.

Return procedure for IRF9530NL:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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