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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF9530NS

Name: IRF9530NS
Brand: Infineon Technologies
SKU: IRF9530NS
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF9530NS

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRF9530NS.pdf

Description:: MOSFET P-CH 100V 14A D2PAK

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Product details

Overview

IRF9530NS from Infineon Technologies is a P-channel enhancement-mode HEXFET® Power MOSFET in D2-Pak (TO-263AB) package, rated for -100 V V_DS, 0.20 Ω R_DS(on) at V_GS = -10 V, and -14 A continuous drain current at T_C = 25°C. It serves as a high-efficiency, fully avalanche-rated power switch in DC-DC converters, motor control H-bridges, and industrial power supplies.

For engineers reviewing the IRF9530NS datasheet, IRF9530NS pinout, IRF9530NS application, or IRF9530NS equivalent, key selection criteria include its -100 V breakdown voltage, low 0.20 Ω on-resistance, 175°C junction temperature rating, fast switching (t_r = 58 ns), and surface-mount D2-Pak thermal performance (R_θJC = 1.9 °C/W).

Technical Context

This device operates as a voltage-controlled unidirectional power switch with body diode conduction capability. Its P-channel topology enables high-side switching without level-shifting circuitry, and its fully avalanche-rated design supports inductive load handling up to 250 mJ single-pulse energy under defined test conditions (L = 7.0 mH, I_AS = -8.4 A).

The D2-Pak package delivers low thermal resistance (R_θJC = 1.9 °C/W) and high power dissipation (79 W at T_C = 25°C), while gate charge parameters (Q_g = 58 nC, Q_gd = 32 nC) define its drive strength requirements and switching loss profile in hard-switched topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-100 V - Supports high-voltage DC bus operation up to 100 V reverse polarity.
R_DS(on)	0.20 Ω @ V_GS = -10 V - Enables <1.4 W conduction loss at -8.4 A, critical for thermal management.
I_D (cont)	-14 A @ T_C = 25°C - Sustains full-load current in compact heatsinked designs.
E_AS	250 mJ - Withstands unclamped inductive energy spikes without failure in relay/motor drive circuits.
t_r/t_f	58 ns / 46 ns - Reduces switching transition time, lowering overlap losses in PWM applications.
R_θJC	1.9 °C/W - Allows direct case-to-heatsink thermal path for high-power density mounting.
Q_g	58 nC - Determines gate driver current requirement (~1.2 A peak for 50 ns turn-on).

Pinout & Package

D2-Pak (TO-263AB) surface-mount package with exposed drain pad for thermal and electrical connection. Three terminals: Gate (G), Drain (D), Source (S). Drain tab is electrically connected to the die backside and must be soldered to PCB copper pour for optimal thermal performance.

Pin/Terminal	Circuit Role	Design Meaning
G	Control input	Receives negative gate voltage (-10 V typical) to fully enhance channel; ±20 V absolute max rating.
D	Power output (high-side switch node)	Connected to exposed metal tab; carries full load current and requires thermal pad routing.
S	Reference return	Source terminal tied to system ground or floating rail; body diode anode connects internally to S.

Key Features

Feature	Design Value
Fully avalanche rated	250 mJ single-pulse energy tolerance eliminates need for external snubbers in inductive switching.
P-channel configuration	Enables high-side switching without bootstrap or isolated gate drive circuitry in 12–48 V systems.
175°C maximum junction temperature	Supports operation in sealed enclosures or high-ambient environments without derating.
Low-profile surface-mount D2-Pak	Provides 79 W power dissipation in PCB-mount form factor-higher than TO-220 equivalents.
Fast body diode recovery	t_rr = 130–190 ns enables use in synchronous rectification and freewheeling paths with minimal reverse recovery loss.

Applications

Industrial Motor Control

DC-DC Converter High-Side Switch

Use Scenario: Bidirectional H-bridge driving 24 V brushed DC motors in PLC-controlled actuators.

IC Role / Device Role / Timing Role: P-channel high-side switch controlling motor voltage polarity and enabling regenerative braking via body diode conduction.

Use Value: Avalanche rating absorbs inductive kickback during rapid direction reversal; R_DS(on) = 0.20 Ω limits heat rise at 10 A peak.

Use Scenario: Non-isolated buck converter stepping 48 V down to 12 V for telecom power distribution.

IC Role / Device Role / Timing Role: High-side synchronous rectifier switch operating at 200 kHz with gate-driven body diode commutation.

Use Value: Fast t_r/t_f (58/46 ns) and low Q_gd (32 nC) minimize switching loss; D2-Pak thermal performance sustains 79 W dissipation.

Uninterruptible Power Supply (UPS)

Overvoltage Protection Circuit

Use Scenario: Battery backup path switching in line-interactive UPS with 36 V nominal battery bank.

IC Role / Device Role / Timing Role: Reverse-polarity protected high-side isolation switch activated during AC mains failure.

Use Value: -100 V V_DS accommodates battery float voltage plus surge margin; -14 A rating handles 500 W load at 36 V.

Use Scenario: Input protection stage clamping transient overvoltage on 24 V industrial sensor bus.

IC Role / Device Role / Timing Role: Crowbar switch triggered by comparator to short faulted rail to ground before damage occurs.

Use Value: 250 mJ E_AS withstands >100 µs overvoltage events; 1.9 °C/W R_θJC ensures rapid thermal response during crowbar conduction.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel high-voltage power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF9540NPbF	V_DS = -100 V, R_DS(on) = 0.20 Ω, but higher Q_g = 71 nC and slower t_r = 80 ns	Less suitable for >100 kHz switching due to increased gate drive demand and switching loss	Prefer when cost sensitivity outweighs switching efficiency in <50 kHz applications
STP12PF06	V_DS = -60 V, R_DS(on) = 0.22 Ω, lower avalanche rating (E_AS = 120 mJ)	Limited to ≤60 V systems; not drop-in for 100 V bus designs	Select only if system voltage is capped at 48 V and thermal budget allows 0.02 Ω higher on-resistance

Compared with IRF9540NPbF and STP12PF06, the IRF9530NS offers superior switching speed and avalanche robustness at identical voltage rating, making it optimal for high-reliability 100 V industrial power switching where thermal and transient margins are constrained.

Availability

IRF9530NS is available at Aetrix Electronics and suitable for industrial motor control, DC-DC converter high-side switching, uninterruptible power supply (UPS) battery path management, and overvoltage protection circuits requiring stable component supply across extended production lifecycles.

Supply support for IRF9530NS includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.

The HEXFET® Power MOSFET product line was engineered for high-efficiency, high-reliability power conversion in industrial, telecom, and automotive applications-emphasizing rugged avalanche performance, low on-resistance, and thermally optimized packaging.

FAQ

What is the maximum gate-to-source voltage for reliable operation?

The absolute maximum V_GS is ±20 V. Operation beyond this risks permanent gate oxide damage. For reliable enhancement, apply -10 V to achieve specified R_DS(on); gate drive circuits must limit transient overshoot using clamping diodes or Zener regulation.

Can IRF9530NS be used in parallel configurations?

Yes-its positive temperature coefficient of R_DS(on) (see Fig. 4) enables current sharing when paralleled. Ensure matched gate drive impedance, symmetrical PCB layout, and shared thermal mass to prevent thermal runaway. Derate total current by 15% for two devices.

Is the body diode suitable for continuous freewheeling?

Yes-the source-drain diode supports -14 A continuous forward current (I_S) and -56 A pulsed current (I_SM). Its V_SD = -1.6 V at -8.4 A and t_rr = 130–190 ns make it viable for non-synchronous rectification in low-frequency (<50 kHz) converters.

Does IRF9530NS require a heatsink in standard PCB mount?

Yes-when dissipating >2.5 W continuously, a heatsink or large copper pour is required. At 79 W max (T_C = 25°C), thermal design must maintain case temperature ≤100°C. Use minimum 200 mm² 2-oz copper pad with thermal vias to inner layers per Infineon AN-994 guidelines.

IRF9530NS Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tube

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 14A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 200mOhm @ 8.4A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 58 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 760 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 3.8W (Ta), 79W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

IRF9530NS FAQ

1.How can I place an order for IRF9530NS through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF9530NS on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF9530NS reliable?

The price and inventory of IRF9530NS are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF9530NS is usually 5 days.

3.What payment methods are accepted for IRF9530NS?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF9530NS transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF9530NS?

IRF9530NS orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF9530NS order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF9530NS?

For technical support, including IRF9530NS datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF9530NS requirements.

6.How does Aetrix verify that IRF9530NS is sourced from the original manufacturer or authorized distributors?

All IRF9530NS products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF9530NS meets industry standards.

7.What is the process for return or replacement of IRF9530NS?

All IRF9530NS units undergo pre-shipment inspection (PSI). If there is an issue with IRF9530NS, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF9530NS part is unused and in its original packaging.

Return procedure for IRF9530NS:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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