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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF9530NSPBF

Name: IRF9530NSPBF
Brand: Infineon Technologies
SKU: IRF9530NSPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF9530NSPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRF9530NSPBF.pdf

Description:: MOSFET P-CH 100V 14A D2PAK

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Product details

Overview

IRF9530NSPBF from Infineon Technologies is a P-channel enhancement-mode HEXFET® Power MOSFET in D2-Pak (TO-263AB) package, rated for -100V V_BRDSS, 0.20Ω R_DS(on) at V_GS = -10V, and -14A continuous drain current at T_C = 25°C. It serves as a high-reliability power switch in DC-DC converters, motor control H-bridges, and industrial power supplies.

For engineers reviewing the IRF9530NSPBF datasheet, IRF9530NSPBF pinout, IRF9530NSPBF application, or IRF9530NSPBF equivalent, key selection criteria include its -100V blocking capability, avalanche-rated ruggedness (250 mJ E_AS), fast switching (t_r = 58 ns), thermal performance (R_θJC = 1.9°C/W), and lead-free D2-Pak surface-mount compatibility.

Technical Context

This MOSFET employs fifth-generation HEXFET® process technology to achieve low on-resistance per die area while maintaining robust avalanche energy handling (250 mJ single-pulse). Its P-channel configuration enables high-side switching without level-shifting circuitry in buck regulators and load-switch applications.

The device features a fully rated body diode with t_rr = 130–190 ns and Q_rr = 650–970 nC, supporting synchronous rectification and inductive load commutation. Thermal design is enabled by low junction-to-case resistance (1.9°C/W) and 175°C maximum operating junction temperature.

Key Specifications

Parameter	Value and Actual Design Meaning
V_BRDSS	-100 V - Maximum drain-source blocking voltage before avalanche onset; defines safe operation in 48V/72V bus systems.
R_DS(on)	0.20 Ω @ V_GS = -10V - On-state resistance determines conduction loss (I²R) in high-current paths up to -14A.
I_D (continuous)	-14 A @ T_C = 25°C - Continuous current rating under heatsink-cooled conditions; derates linearly above 25°C case temp.
E_AS	250 mJ - Single-pulse avalanche energy rating; ensures survivability during inductive turn-off transients without external snubbers.
t_r/t_f	58 ns / 46 ns - Rise/fall times at V_DD = -50V, I_D = -8.4A; enables >100 kHz switching in SMPS designs.
R_θJC	1.9 °C/W - Junction-to-case thermal resistance; allows direct thermal interface to heatsinks for high-power dissipation (79 W).
Q_g	58 nC - Total gate charge; determines driver strength requirement and switching loss trade-off in gate-drive circuits.

Pinout & Package

D2-Pak (TO-263AB) surface-mount package with exposed drain pad for thermal and electrical connection. Standard 3-pin layout: Gate (G), Drain (D), Source (S), with Drain tab electrically and thermally connected to the large copper pad on the bottom side.

Pin/Terminal	Circuit Role	Design Meaning
G	Gate	Controls channel conduction; requires -10V to fully enhance; ±20V absolute max gate-source voltage.
D	Drain	Main high-voltage terminal; connected to exposed metal tab; carries full load current and dissipates heat directly to PCB/heatsink.
S	Source	Reference node for gate drive and current return path; body diode anode; tied to system ground in high-side switch configurations.

Key Features

Feature	Design Value
P-channel enhancement mode	Enables high-side switching without bootstrap or isolated gate drivers in buck, inverting, and load-switch topologies.
Fully avalanche rated	Guarantees operation under unclamped inductive switching stress (E_AS = 250 mJ), reducing need for external protection components.
175°C maximum junction temperature	Supports reliable operation in high-ambient environments such as industrial motor drives and automotive under-hood power modules.
Low-profile D2-Pak package	Provides surface-mount assembly compatibility with 79 W power dissipation capability-higher than TO-220 equivalents in same footprint.
Lead-free (Pb-free) construction	Complies with RoHS Directive 2011/65/EU; marked with "P" suffix and compatible with standard reflow profiles.

Applications

Industrial Motor Control

DC-DC Buck Converters

Use Scenario: Half-bridge high-side switch in 24–48V BLDC motor gate drivers.

IC Role / Device Role / Timing Role: P-channel MOSFET providing controlled high-side power delivery; operates in hard-switched PWM mode at 20–50 kHz.

Use Value: Low R_DS(on) minimizes conduction loss; avalanche rating absorbs back-EMF spikes during phase commutation.

Use Scenario: Synchronous rectifier or high-side switch in non-isolated buck regulator for FPGA core voltage.

IC Role / Device Role / Timing Role: Main power switch regulating output voltage; driven by controller IC with gate driver stage.

Use Value: Fast t_r/t_f supports high-frequency operation; low Q_g reduces driver power consumption and layout complexity.

Power Supply OR-ing

Overvoltage Protection Circuits

Use Scenario: Reverse-polarity and hot-swap protection in redundant 12V/24V telecom power distribution units.

IC Role / Device Role / Timing Role: Load switch configured as ideal diode replacement; controlled via external enable signal.

Use Value: Body diode forward voltage (-1.6 V) is lower than Schottky alternatives at high current; R_DS(on) eliminates forward drop entirely when enhanced.

Use Scenario: Crowbar or clamp element in overvoltage shutdown circuits for battery management systems.

IC Role / Device Role / Timing Role: Voltage-triggered switch that conducts during fault to short input rail and trip fuse.

Use Value: -100V V_BRDSS withstands transient surges; rugged avalanche capability prevents failure during sustained overvoltage events.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF9540NPbF	V_BRDSS = -100V, R_DS(on) = 0.20Ω, but higher Q_g = 71 nC and slower t_r = 80 ns	Less suitable for >100 kHz switching; better for lower-frequency, higher-current linear regulation	Select when lower gate drive loss is acceptable and thermal margin exceeds 10°C
STP12PF06	V_BRDSS = -60V, R_DS(on) = 0.22Ω, TO-220 package, no avalanche rating	Limited to ≤48V systems; lacks E_AS specification for inductive load reliability	Choose only for cost-sensitive, low-voltage, non-avalanche-critical applications with adequate heatsinking

Compared with IRF9540NPbF and STP12PF06, IRF9530NSPBF delivers superior switching speed and guaranteed avalanche ruggedness in a surface-mount package-critical for space-constrained, high-reliability industrial power stages where thermal and transient robustness are prioritized over minimal gate charge.

Availability

IRF9530NSPBF is available at Aetrix Electronics and suitable for industrial motor control, DC-DC buck converters, power supply OR-ing, and overvoltage protection circuits requiring stable component supply and long-term manufacturability.

Supply support for IRF9530NSPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

The HEXFET® Power MOSFET product line targets high-efficiency, high-reliability power conversion and switching applications-including motor drives, SMPS, and protection circuits-where low R_DS(on), fast switching, and rugged avalanche performance are essential.

FAQ

What is the maximum continuous drain current for IRF9530NSPBF at 100°C case temperature?

The maximum continuous drain current is -10 A at T_C = 100°C, as specified in the Absolute Maximum Ratings table. This reflects thermal derating due to reduced channel conductivity and increased R_DS(on) at elevated temperatures, requiring appropriate heatsinking for sustained operation.

Can IRF9530NSPBF be used in avalanche mode repeatedly?

No-E_AS = 250 mJ is a single-pulse rating. Repetitive avalanche is limited to E_AR = 7.9 mJ per pulse. Repeated operation near avalanche limits risks cumulative junction damage; proper snubber design or clamping is required for repetitive inductive switching.

Is the D2-Pak package of IRF9530NSPBF compatible with standard reflow soldering processes?

Yes-the D2-Pak (TO-263AB) package is qualified for lead-free reflow per J-STD-020. Peak temperature must not exceed 260°C for 10 seconds, and the exposed drain pad requires adequate thermal relief and solder paste stencil design to ensure void-free attachment and mechanical reliability.

Does IRF9530NSPBF have a built-in body diode, and what are its key parameters?

Yes-it integrates a monolithic p-n junction body diode with V_SD = -1.6 V at I_S = -8.4 A and T_J = 25°C, t_rr = 130–190 ns, and Q_rr = 650–970 nC. These values support moderate-speed freewheeling in buck and half-bridge topologies but require careful layout to minimize ringing.

IRF9530NSPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tube

Product Status:: Discontinued at Digi-Key

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 14A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 200mOhm @ 8.4A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 58 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 760 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 3.8W (Ta), 79W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

IRF9530NSPBF FAQ

1.How can I place an order for IRF9530NSPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF9530NSPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF9530NSPBF reliable?

The price and inventory of IRF9530NSPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF9530NSPBF is usually 5 days.

3.What payment methods are accepted for IRF9530NSPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF9530NSPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF9530NSPBF?

IRF9530NSPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF9530NSPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF9530NSPBF?

For technical support, including IRF9530NSPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF9530NSPBF requirements.

6.How does Aetrix verify that IRF9530NSPBF is sourced from the original manufacturer or authorized distributors?

All IRF9530NSPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF9530NSPBF meets industry standards.

7.What is the process for return or replacement of IRF9530NSPBF?

All IRF9530NSPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF9530NSPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF9530NSPBF part is unused and in its original packaging.

Return procedure for IRF9530NSPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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