My Inquiry
My Account
Infineon Technologies IRF9530NSTRR
- Part No.:
- IRF9530NSTRR
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
IRF9530NSTRR.pdf
- Description:
- MOSFET P-CH 100V 14A D2PAK
- Quantity:
- Payment:
- Shipping:
Inventory:3,381
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
IRF9530NSTRR from Infineon Technologies is a P-channel enhancement-mode HEXFET® Power MOSFET in D2-Pak (TO-263AB) package, rated for -100V VBRDSS, 0.20Ω RDS(on) at VGS = -10V, and -14A continuous drain current at TC = 25°C. It serves as a high-reliability power switch in DC-DC converters, motor control H-bridges, and industrial power supplies.
For engineers reviewing the IRF9530NSTRR datasheet, IRF9530NSTRR pinout, IRF9530NSTRR application, or IRF9530NSTRR equivalent, key selection criteria include its -100V blocking capability, avalanche-rated operation (250 mJ EAS), fast switching (tr = 58 ns), thermal robustness (TJ = -55°C to +175°C), and surface-mount D2-Pak footprint compatibility with high-current PCB layouts.
Technical Context
This MOSFET employs fifth-generation HEXFET process technology to achieve low on-resistance per die area while maintaining rugged unclamped inductive switching performance. Its body diode exhibits trr = 130–190 ns and Qrr = 650–970 nC under specified conditions, supporting moderate-frequency synchronous rectification.
The device operates with gate threshold voltage VGS(th) = -2.0 to -4.0 V and forward transconductance gfs = 3.2 S, enabling direct drive from standard logic-level controllers. Its RθJC = 1.9°C/W supports heatsink-coupled thermal management in high-power linear or switching topologies.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VBRDSS | -100 V - Maximum drain-source blocking voltage before avalanche onset |
| RDS(on) | 0.20 Ω @ VGS = -10 V, ID = -8.4 A - On-state resistance determines conduction loss in high-current paths |
| ID (continuous) | -14 A @ TC = 25°C - Continuous safe operating current with case-mounted heatsinking |
| EAS | 250 mJ - Single-pulse avalanche energy rating confirms ruggedness against inductive load transients |
| tr/tf | 58 ns / 46 ns - Rise/fall times define minimum achievable switching frequency and associated gate drive requirements |
| TJ range | -55°C to +175°C - Extended junction temperature range enables operation in harsh industrial environments |
| Qg | 58 nC - Total gate charge determines required gate driver peak current and switching loss |
Pinout & Package
D2-Pak (TO-263AB) surface-mount package with exposed drain pad for thermal and electrical connection; 3-terminal configuration optimized for high-current PCB mounting and heatsink interface.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G (Gate) | Control electrode | Receives negative VGS to turn on P-channel device; requires <20 V absolute rating |
| D (Drain) | Main power output terminal | Connected to exposed metal pad; carries full load current and dissipates heat to PCB/heatsink |
| S (Source) | Reference and return path | Common node for gate drive reference and load return; defines VGS control potential |
Key Features
| Feature | Design Value |
|---|---|
| Fully avalanche-rated | 250 mJ single-pulse EAS enables reliable operation in inductive switching without external snubbers |
| P-channel enhancement mode | Self-contained high-side switching capability without level-shifting circuitry in buck or half-bridge topologies |
| Low-profile D2-Pak | Surface-mount footprint with thermal pad supports >2 W dissipation in standard FR-4 PCB layouts |
| Fast body diode | trr = 130–190 ns and Qrr = 650–970 nC allow use in freewheeling paths up to ~100 kHz |
| Lead-free construction | RoHS-compliant packaging meets industrial and automotive environmental compliance requirements |
Applications
| Industrial Motor Control | DC-DC Converter High-Side Switch |
|---|---|
Use Scenario: Bidirectional H-bridge driving 24–48 V brushed DC motors in PLC-controlled conveyors. IC Role / Device Role / Timing Role: P-channel high-side switch in complementary pair configuration, handling reverse polarity and regenerative braking currents. Use Value: -100 V rating accommodates back-EMF spikes; 0.20 Ω RDS(on) limits I²R losses at 10–12 A nominal load. | Use Scenario: Non-isolated buck converter delivering 12 V/5 A from 48 V rail in telecom power shelf. IC Role / Device Role / Timing Role: High-side synchronous rectifier controlled by PWM signal referenced to input rail. Use Value: Fast tr/tf (58/46 ns) enables efficient 200–300 kHz operation; low Qg reduces gate drive power. |
| Uninterruptible Power Supply (UPS) | Overvoltage Protection Circuit |
Use Scenario: Battery backup stage switching between AC line and 48 V battery bank in online UPS systems. IC Role / Device Role / Timing Role: Main power path switch isolating battery during normal operation and engaging during outage. Use Value: 175°C TJ rating ensures reliability under sustained 10–15 A loads; avalanche rating absorbs line surge events. | Use Scenario: Reverse-polarity and overvoltage crowbar in 24 V vehicle-mounted electronics. IC Role / Device Role / Timing Role: P-channel MOSFET configured as active clamp, triggered by comparator when input exceeds 30 V. Use Value: -100 V VBRDSS provides 3× margin over 24 V system; fast turn-off (td(off) = 45 ns) limits fault energy. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF9540NPBF | VBRDSS = -100 V, RDS(on) = 0.20 Ω, but higher Qg = 71 nC and slower tr = 80 ns | Lower switching efficiency above 100 kHz; better suited for lower-frequency linear regulation | Prefer when gate drive strength is limited and switching frequency ≤ 50 kHz |
| STP9PF10 | VBRDSS = -100 V, RDS(on) = 0.22 Ω, lower EAS = 120 mJ, TO-220 package | Requires through-hole mounting and larger heatsink; not surface-mount compatible | Choose only if D2-Pak footprint is unavailable and thermal design permits TO-220 mechanical constraints |
Compared with IRF9540NPBF and STP9PF10, IRF9530NSTRR offers superior switching speed and surface-mount integration for space-constrained, medium-frequency power stages-without sacrificing avalanche ruggedness or thermal capability.
Availability
IRF9530NSTRR is available at Aetrix Electronics and suitable for industrial motor control, DC-DC converter high-side switching, uninterruptible power supply (UPS) battery path management, and overvoltage protection circuits requiring stable component supply across multi-year production cycles.
Supply support for IRF9530NSTRR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader specializing in power management, sensor, and automotive ICs, with core expertise in silicon-based power devices and system-level solutions.
The HEXFET® Power MOSFET product line delivers high-efficiency, thermally robust discrete power switches for industrial, computing, and renewable energy applications where reliability under transient stress is critical.
FAQ
Is IRF9530NSTRR pin-compatible with IRF9530NSPbF?
Yes. IRF9530NSTRR and IRF9530NSPbF share identical D2-Pak (TO-263AB) package dimensions, pin assignment (G-D-S), and thermal pad layout. Both are lead-free and RoHS-compliant, with identical absolute maximum ratings and electrical characteristics per Infineon's official datasheet revision 2016-05-27.
What is the recommended gate resistor value for 200 kHz switching?
A 9.1 Ω gate resistor is validated in the datasheet for switching characterization (td(off), tf). For 200 kHz operation, this value balances switching loss and EMI; reduce to 4.7 Ω only if gate driver can source/sink ≥2 A peak and layout minimizes parasitic inductance.
Can IRF9530NSTRR be used in parallel configurations?
Yes-its positive RDS(on) temperature coefficient (-0.11 V/°C for VBRDSS, correlated with on-resistance drift) promotes current sharing. Use matched gate resistors, symmetrical PCB traces, and shared thermal plane to ensure balanced conduction across paralleled units.
Does the body diode support synchronous rectification?
The body diode has trr = 130–190 ns and Qrr = 650–970 nC, making it suitable for non-synchronous freewheeling up to ~100 kHz. For true synchronous rectification, external Schottky or MOSFET-based active rectifiers are preferred due to lower VSD and faster recovery.
IRF9530NSTRR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 14A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 200mOhm @ 8.4A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 58 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 760 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 3.8W (Ta), 79W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- D2PAK
IRF9530NSTRR FAQ
1.How can I place an order for IRF9530NSTRR through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF9530NSTRR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF9530NSTRR reliable?
The price and inventory of IRF9530NSTRR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF9530NSTRR is usually 5 days.
3.What payment methods are accepted for IRF9530NSTRR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF9530NSTRR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF9530NSTRR?
IRF9530NSTRR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF9530NSTRR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF9530NSTRR?
For technical support, including IRF9530NSTRR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF9530NSTRR requirements.
6.How does Aetrix verify that IRF9530NSTRR is sourced from the original manufacturer or authorized distributors?
All IRF9530NSTRR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF9530NSTRR meets industry standards.
7.What is the process for return or replacement of IRF9530NSTRR?
All IRF9530NSTRR units undergo pre-shipment inspection (PSI). If there is an issue with IRF9530NSTRR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF9530NSTRR part is unused and in its original packaging.
Return procedure for IRF9530NSTRR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
IRF9530NSTRR Tags
-
BSZ180P03NS3EGATMA1
Infineon Technologies
-
SIRA14DP-T1-GE3
Vishay Siliconix
-
AO4419
Alpha & Omega Semiconductor Inc.
-
SISA14BDN-T1-GE3
Vishay Siliconix
-
PSMN9R5-30YLC,115
Nexperia USA Inc.
-
BUK9Y21-40E,115
Nexperia USA Inc.
-
RTQ035N03HZGTR
Rohm Semiconductor
-
FDMS7680
onsemi
-
RQ3E180BNTB
Rohm Semiconductor
-
STL6N2VH5
STMicroelectronics
-
DMPH4029LFGQ-7
Diodes Incorporated
-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.
18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…
Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…
Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…
A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…
Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…
Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…
Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…
Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …
Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.
