Infineon Technologies IRF9530NSTRRPBF

Overview

IRF9530NSTRRPBF from Infineon Technologies is a P-channel enhancement-mode HEXFET® Power MOSFET in D2-Pak (TO-263AB) package, rated for -100 V V_DS, 0.20 Ω R_DS(on) at V_GS = -10 V, and -14 A continuous drain current at T_C = 25°C. It operates from -55°C to +175°C and is fully avalanche-rated for rugged switching in high-reliability DC-DC converters and motor control circuits.

For engineers reviewing the IRF9530NSTRRPBF datasheet, IRF9530NSTRRPBF pinout, IRF9530NSTRRPBF application, or IRF9530NSTRRPBF equivalent, key selection criteria include its -100 V breakdown voltage, low 0.20 Ω on-resistance, fast 15 ns turn-on delay, 46 ns fall time, and D2-Pak thermal performance with R_θJC = 1.9 °C/W.

Technical Context

This MOSFET uses fifth-generation HEXFET process technology to achieve optimized conduction and switching trade-offs. Its P-channel architecture enables high-side switching without level-shifting circuitry, and its integral body diode supports synchronous rectification and bidirectional current handling in H-bridge topologies.

The device is characterized for unclamped inductive switching with 250 mJ single-pulse avalanche energy and supports fast dv/dt of -5.0 V/ns during diode recovery. Thermal design leverages the D2-Pak's low junction-to-case resistance (1.9 °C/W) and 79 W power dissipation capability at T_C = 25°C.

Key Specifications

Pinout & Package

D2-Pak (TO-263AB) surface-mount package with exposed drain pad for thermal and electrical connection. Three terminals: Gate (G), Drain (D), Source (S). Drain tab is electrically connected to the die backside and serves as primary heat path.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel high-voltage power MOSFET applications.

Compared with IRF9540NPbF, IRF9530NSTRRPBF offers higher continuous current (-14 A vs. -12 A) in surface-mount form; versus IPB90P03P4L-04, it trades 7× higher R_DS(on) for 3.3× higher voltage rating-making it uniquely suited for 48–100 V industrial switching where both voltage headroom and avalanche ruggedness are mandatory.

Availability

IRF9530NSTRRPBF is available at Aetrix Electronics and suitable for DC-DC converters, H-bridge motor drivers, industrial power supplies, and overvoltage protection circuits requiring stable component supply across extended production lifecycles.

Supply support for IRF9530NSTRRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

The HEXFET® Power MOSFET product line delivers high-voltage, high-current discrete transistors optimized for efficiency, ruggedness, and thermal performance in industrial power conversion and motor control systems.

FAQ

What is the maximum gate-to-source voltage rating for IRF9530NSTRRPBF?

The absolute maximum V_GS rating is ±20 V. Operation beyond this range risks permanent gate oxide damage. For reliable enhancement, V_GS must be ≤ -2.0 V (threshold) and ideally ≤ -10 V to achieve specified R_DS(on) of 0.20 Ω. Gate drive circuits must include clamping or zener protection to prevent overshoot during switching transients.

Can IRF9530NSTRRPBF be used in parallel configurations?

Yes, but with strict layout and gate drive matching. Its positive R_DS(on) temperature coefficient (−0.11 V/°C for V_BR, correlated with on-resistance drift) supports current sharing. However, gate charge mismatch (Q_g = 58 nC) and source inductance (L_S = 7.5 nH) require individual gate resistors and Kelvin source connections to avoid dynamic imbalance and oscillation.

Is the body diode suitable for continuous freewheeling current?

Yes-the integral body diode is rated for -14 A continuous source current (I_S) and -56 A pulsed (I_SM). Its V_SD = -1.6 V at -8.4 A and t_rr = 130–190 ns enable use in non-synchronous buck or flyback freewheel paths. However, for high-frequency or high-efficiency designs, an external Schottky diode may be preferred to reduce conduction and recovery losses.

Does IRF9530NSTRRPBF require a heatsink in typical operation?

At full -14 A continuous current, yes-a heatsink is required to maintain T_J ≤ 175°C. With R_θJC = 1.9 °C/W and ambient T_A = 50°C, even 3.8 W dissipation (at T_A) demands ≥10 °C/W system thermal resistance. For PCB-only cooling (R_θJA = 40 °C/W), derating to ≤3 A is necessary unless using copper pour, thermal vias, and external heatsinking.