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Infineon Technologies IRF9540NLPBF
- Part No.:
- IRF9540NLPBF
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-262-3 Long Leads, I2PAK, TO-262AA
- Datasheet:
-
IRF9540NLPBF.pdf
- Description:
- MOSFET P-CH 100V 23A TO262
- Quantity:
- Payment:
- Shipping:
Inventory:2,708
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Product details
Overview
IRF9540NLPBF from Infineon Technologies is a P-channel enhancement-mode MOSFET in D2Pak (TO-262) package, rated for -100 V V(BR)DSS, 14 A continuous drain current at TC = 25°C, and 117 mΩ RDS(on) at VGS = -10 V. It features 150°C maximum junction temperature, fast switching (tr = 64 ns, tf = 45 ns), and rated repetitive avalanche energy up to 84 mJ - deployed in DC-DC synchronous rectification and high-side load switching.
For engineers reviewing the IRF9540NLPBF datasheet, IRF9540NLPBF pinout, IRF9540NLPBF application, or IRF9540NLPBF equivalent, key selection criteria include its negative gate threshold (-2.0 to -4.0 V), low RDS(on) stability over temperature, body diode reverse recovery charge (Qrr = 890–1340 nC), and suitability for industrial power supplies requiring robust avalanche capability.
Technical Context
This MOSFET uses advanced planar process technology optimized for high-voltage P-channel operation. Its gate structure supports stable turn-on with VGS(th) centered at -3.0 V and exhibits low Miller charge (Qgd = 38–57 nC), enabling clean commutation in hard-switched topologies.
The integrated body diode is characterized for reverse recovery (trr = 140–210 ns, Qrr = 890–1340 nC) under di/dt = -100 A/µs conditions, and thermal design is enabled by RθJC = 1.1 °C/W and RθJA = 40 °C/W (PCB mount, steady state).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| V(BR)DSS | -100 V - Withstands up to -100 V drain-to-source voltage before avalanche conduction begins. |
| RDS(on) | 117 mΩ max @ VGS = -10 V, TJ = 25°C - Enables low conduction loss in high-current P-channel switch applications. |
| ID (TC = 25°C) | -14 A - Continuous drain current rating under heatsink-cooled conditions at 25°C case temperature. |
| Qg / Qgd | 73–110 nC total gate charge; 38–57 nC Miller charge - Determines required gate drive strength and switching speed control. |
| EAS | 300 mJ single-pulse avalanche energy - Supports reliable operation during transient overvoltage events without failure. |
| TJ max | +150°C - Allows sustained operation in high-ambient industrial environments with appropriate thermal management. |
| tr / tf | 64 ns rise time; 45 ns fall time @ ID = -14 A, VDD = -50 V - Enables efficient high-frequency switching in SMPS and motor control. |
Pinout & Package
Package: D2Pak (TO-262), surface-mount with isolated drain tab. Thermal pad on underside requires solder paste stencil and reflow profile compatible with 260°C peak.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Gate (G) | Control electrode | Receives negative voltage relative to source to turn on; threshold range -2.0 to -4.0 V ensures compatibility with standard logic-level drivers. |
| Drain (D) | High-side current path | Connected to input rail in high-side switch configuration; electrically tied to exposed metal tab for thermal conduction. |
| Source (S) | Reference node | Serves as return path and gate reference; must be routed with low inductance to minimize switching noise and shoot-through risk. |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low RDS(on) | 117 mΩ max enables <1.6 W conduction loss at -14 A, reducing heatsink requirements in compact designs. |
| 150°C junction rating | Supports operation in sealed enclosures or high-ambient environments without derating below full current capability. |
| Fast switching performance | tr = 64 ns / tf = 45 ns allows >200 kHz operation in buck converters while maintaining efficiency. |
| Repetitive avalanche rated | EAR = 84 mJ confirms validated capability to absorb repeated inductive turn-off energy without degradation. |
| Lead-free construction | Pb-free plating and RoHS-compliant materials meet global environmental compliance requirements for industrial production. |
Applications
| Industrial DC Power Distribution | High-Side Load Switching |
|---|---|
Use Scenario: Remote-controlled 24–48 V DC bus switching in programmable logic controllers and distributed I/O modules. IC Role / Device Role / Timing Role: P-channel high-side switch controlling power delivery to field devices; operates in linear or saturated mode depending on gate drive level. Use Value: 117 mΩ RDS(on) limits voltage drop to <1.6 V at 14 A, preserving system margin while supporting hot-swap capability. | Use Scenario: In-rush current limiting and fault isolation for FPGA or ASIC power rails in telecom baseband cards. IC Role / Device Role / Timing Role: Controlled high-side switch with soft-start via gate resistor network; body diode blocks reverse current during power sequencing. Use Value: Rated repetitive avalanche (84 mJ) absorbs energy from inductive loads during controlled shutdown, preventing latch-up or damage. |
| DC-DC Synchronous Rectification | Motor Drive High-Side Control |
Use Scenario: Secondary-side synchronous rectifier in isolated 48 V to 12 V telecom DC-DC converters operating at 300 kHz. IC Role / Device Role / Timing Role: P-channel MOSFET replacing Schottky diode to reduce conduction loss; driven by dedicated gate driver with dead-time control. Use Value: Low Qrr (890–1340 nC) and fast trr (140–210 ns) minimize switching loss and EMI during body-diode commutation. | Use Scenario: High-side switch in 3-phase BLDC motor gate driver IC auxiliary supply stage (e.g., bootstrap capacitor charging circuit). IC Role / Device Role / Timing Role: Voltage-clamped high-side switch regulating auxiliary 15 V rail; withstands repetitive dv/dt stress up to 10 V/ns during PWM transitions. Use Value: dv/dt ruggedness and 150°C TJ rating ensure reliability in thermally constrained motor control PCB layouts. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel high-voltage MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF9540NPBF | Same die, TO-220 package; RθJC = 1.7 °C/W vs. 1.1 °C/W for D2Pak; no lead-free marking. | Lower thermal performance in high-power density layouts; unsuitable where PCB space or thermal interface constraints favor D2Pak. | Select when legacy TO-220 footprint compatibility is required and thermal budget permits higher junction rise. |
| STP12PF06 | V(BR)DSS = -60 V; RDS(on) = 120 mΩ; Qg = 60 nC; not rated for repetitive avalanche. | Limited to lower-voltage systems (<60 V); lacks validated avalanche endurance for inductive load switching. | Choose only for cost-sensitive 24 V applications where avalanche stress is absent and gate drive is limited. |
Compared with IRF9540NPBF and STP12PF06, the IRF9540NLPBF uniquely combines -100 V rating, D2Pak thermal advantage, and certified repetitive avalanche capability - making it the only option among the three qualified for 48 V industrial power distribution with fault tolerance.
Availability
IRF9540NLPBF is available at Aetrix Electronics and suitable for industrial DC power distribution, high-side load switching, DC-DC synchronous rectification, and motor drive high-side control requiring stable component supply and long-term lifecycle support.
Supply support for IRF9540NLPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.
The IRF9540NLPBF belongs to Infineon's legacy HEXFET® P-channel MOSFET product line, engineered for high-reliability industrial power switching where avalanche robustness and thermal stability are critical.
FAQ
Is IRF9540NLPBF pin-compatible with IRF9540NSPbF?
Yes - both use identical D2Pak (TO-262) package with Gate-Drain-Source pinout order. The "L" suffix denotes lead-free assembly per JEDEC J-STD-609, while "NS" indicates standard Pb-based finish; mechanical and electrical pin mapping is identical.
What is the maximum safe operating area (SOA) limit at TC = 100°C?
At TC = 100°C, continuous drain current is derated to -9.2 A (per Absolute Maximum Ratings table). SOA is bounded by RDS(on) limitation above 100 µs pulse width and thermal resistance (RθJC = 1.1 °C/W) for longer durations.
Does the body diode support synchronous rectification in continuous conduction mode (CCM)?
Yes - the body diode has characterized trr = 140–210 ns and Qrr = 890–1340 nC at IF = -14 A, enabling CCM operation in buck-derived topologies up to ~300 kHz when paired with proper gate timing and snubbing.
Can IRF9540NLPBF replace an N-channel MOSFET in high-side configuration without level shifting?
No - as a P-channel device, it turns on with VGS < Vth (negative gate bias), eliminating need for high-side gate drivers or charge pumps. However, its RDS(on) is higher than comparable N-channel parts, so conduction loss must be evaluated in context.
IRF9540NLPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- TO-262-3 Long Leads, I2PAK, TO-262AA
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 23A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 117mOhm @ 14A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 110 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1450 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 3.1W (Ta), 110W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-262
IRF9540NLPBF FAQ
1.How can I place an order for IRF9540NLPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF9540NLPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF9540NLPBF reliable?
The price and inventory of IRF9540NLPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF9540NLPBF is usually 5 days.
3.What payment methods are accepted for IRF9540NLPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF9540NLPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF9540NLPBF?
IRF9540NLPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF9540NLPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF9540NLPBF?
For technical support, including IRF9540NLPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF9540NLPBF requirements.
6.How does Aetrix verify that IRF9540NLPBF is sourced from the original manufacturer or authorized distributors?
All IRF9540NLPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF9540NLPBF meets industry standards.
7.What is the process for return or replacement of IRF9540NLPBF?
All IRF9540NLPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF9540NLPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF9540NLPBF part is unused and in its original packaging.
Return procedure for IRF9540NLPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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