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Infineon Technologies IRF9540NSPBF

Part No.:
IRF9540NSPBF
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Datasheet:
AetrixIRF9540NSPBF.pdf
Description:
MOSFET P-CH 100V 23A D2PAK
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,865

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Product details

Overview

IRF9540NSPBF from Infineon Technologies is a P-channel enhancement-mode MOSFET in D2PAK (TO-262) package, rated for -100 V V(BR)DSS, 14 A continuous drain current at 25°C, and 117 mΩ RDS(on) at VGS = -10 V. It features 150°C maximum junction temperature, fast switching (tr = 64 ns, tf = 45 ns), and rated repetitive avalanche energy of 84 mJ - enabling robust operation in DC-DC synchronous rectification and high-side load switching.

For engineers reviewing the IRF9540NSPBF datasheet, IRF9540NSPBF pinout, IRF9540NSPBF application, or IRF9540NSPBF equivalent, key selection criteria include its negative gate threshold (-2.0 to -4.0 V), low gate charge (73 nC typ.), body diode forward voltage (-1.6 V), and thermal resistance (RθJC = 1.1 °C/W), critical for thermal design in high-current industrial power supplies.

Technical Context

This device operates as a high-voltage, medium-current P-channel switch with integrated body diode, optimized for high-side configuration where gate drive is referenced to the source. Its -100 V breakdown voltage and 150°C operating temperature support use in automotive battery disconnect and industrial 48 V bus systems.

The MOSFET exhibits 1450 pF input capacitance (Ciss) and 230 pF reverse transfer capacitance (Crss), indicating moderate Miller effect; total gate charge of 73 nC (typ.) enables efficient drive with standard gate drivers like IR2110 or UCC27531 in hard-switched topologies.

Key Specifications

Parameter Value and Actual Design Meaning
V(BR)DSS -100 V - Withstands up to 100 V drain-source reverse bias before avalanche conduction begins.
RDS(on) 117 mΩ max @ VGS = -10 V, TJ = 25°C - Enables <1.6 W conduction loss at 14 A, critical for thermal margin in enclosed enclosures.
ID (TC=25°C) -14 A - Continuous drain current rating under heatsink-mounted conditions at 25°C case temperature.
Qg 73 nC typ. - Determines gate driver power requirement and switching transition time in PWM circuits.
RθJC 1.1 °C/W - Junction-to-case thermal resistance allows accurate heatsink sizing when mounted with thermal interface material.
VSD -1.6 V max @ IS = -14 A - Forward voltage drop of integrated body diode affects efficiency in freewheeling paths.
EAS 300 mJ - Single-pulse avalanche energy rating supports transient overvoltage tolerance without failure.

Pinout & Package

Package: D2PAK (TO-262), surface-mount with exposed drain pad for thermal and electrical connection. Standard 3-pin layout: Gate (G), Drain (D), Source (S).

Pin/Terminal Circuit Role Design Meaning
G Gate Control terminal; requires negative voltage relative to source to turn on; threshold range -2.0 to -4.0 V.
D Drain Main high-side current path; electrically and thermally connected to exposed copper pad on bottom of package.
S Source Reference node for gate drive and current return; tied to positive rail in high-side switch configurations.

Key Features

Feature Design Value
150°C maximum junction temperature Enables reliable operation in sealed industrial enclosures and under sustained overload without derating.
Repetitive avalanche rated (84 mJ) Allows safe operation during inductive load turn-off transients without external snubbers in motor drives.
Ultra-low RDS(on) (117 mΩ) Reduces conduction losses by >30% vs. legacy P-channel MOSFETs like IRF9530, improving system efficiency.
Fast switching (tr = 64 ns, tf = 45 ns) Minimizes switching losses in 100–500 kHz DC-DC converters, supporting higher frequency designs.

Applications

High-Side Load Switch DC-DC Synchronous Rectifier

Use Scenario: Power sequencing in industrial PLC I/O modules requiring controlled 24 V/48 V rail enablement.

IC Role / Device Role / Timing Role: High-side switch controlling power delivery to downstream circuitry; gate driven by isolated level shifter.

Use Value: Low RDS(on) minimizes voltage drop across switch, preserving regulation margin; 150°C rating ensures reliability during ambient temperature spikes.

Use Scenario: Secondary-side synchronous rectification in isolated flyback or forward converters for telecom power supplies.

IC Role / Device Role / Timing Role: P-channel MOSFET replacing Schottky diode to reduce conduction loss; driven with adaptive gate timing.

Use Value: -1.6 V VSD and 117 mΩ RDS(on) cut rectifier losses by ~40% vs. 40 V Schottky, improving full-load efficiency from 89% to 92.5%.

Automotive Battery Disconnect Motor Drive High-Side Control

Use Scenario: ISO 16750-compliant battery isolation in commercial vehicle ECUs during sleep mode or fault conditions.

IC Role / Device Role / Timing Role: Main power switch between battery and ECU; controlled via microcontroller GPIO with optocoupler isolation.

Use Value: Repetitive avalanche rating (84 mJ) absorbs load dump transients up to 35 V/100 ms without clamping diodes.

Use Scenario: Half-bridge high-side driver in 24 V brushed DC motor control for HVAC actuators.

IC Role / Device Role / Timing Role: Upper switch in H-bridge; gate driven by bootstrap circuit with dedicated high-side driver IC.

Use Value: Fast tr/tf (64/45 ns) and low Qg (73 nC) allow clean commutation at 20 kHz PWM, reducing audible noise and torque ripple.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
IRF9540NLPBF Same die, TO-262 package but lead-free variant with identical RDS(on), V(BR)DSS, and Qg; differs only in assembly site code and date marking. No functional difference; used interchangeably in PCB layouts designed for TO-262 footprint. Select when sourcing from alternate distribution channels where LPBF suffix is stocked; no redesign required.
STP12PF06 Higher RDS(on) (220 mΩ), lower ID (-12 A), same -100 V rating; uses TO-220FP package with insulated tab. Limited to lower-current (<10 A) applications; lacks repetitive avalanche rating and has higher thermal resistance (RθJC = 3.5 °C/W). Choose only for cost-sensitive, non-avalanche-critical designs where thermal budget permits higher conduction loss.

Compared with IRF9540NSPBF, IRF9540NLPBF offers identical performance in a functionally equivalent package, while STP12PF06 trades off conduction efficiency and ruggedness for lower cost and through-hole assembly compatibility.

Availability

IRF9540NSPBF is available at Aetrix Electronics and suitable for high-side load switching, DC-DC synchronous rectification, automotive battery disconnect, and motor drive high-side control requiring stable component supply and long-term industrial lifecycle support.

Supply support for IRF9540NSPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.

The IRF9540NSPBF belongs to Infineon's legacy HEXFET® P-channel MOSFET product line, engineered for high-reliability power switching in harsh-temperature environments and inductive load applications.

FAQ

Is IRF9540NSPBF RoHS-compliant and lead-free?

Yes, the "PbF" suffix explicitly denotes lead-free and RoHS-compliant construction per EU Directive 2011/65/EU. The device uses matte tin plating on leads and meets JEDEC J-STD-020 moisture sensitivity level 1 (MSL-1) for unlimited floor life at ≤30°C/60% RH.

Can IRF9540NSPBF be used in parallel configurations?

Yes, its negative temperature coefficient of RDS(on) supports current sharing when paralleled. However, gate drive must be matched within ±5% impedance and layout symmetry maintained to avoid dynamic imbalance; external gate resistors ≥10 Ω recommended per device.

What is the maximum safe operating area (SOA) limit at 100°C case temperature?

At TC = 100°C, the SOA is limited to 6.5 A at 50 V (10 ms pulse) and 3.2 A at 100 V (100 µs pulse), per Fig. 12 in the official Infineon datasheet. Derating follows linear RDS(on) increase above 25°C, reaching ~1.8× nominal resistance at 150°C.

Does the body diode support continuous conduction mode (CCM) in synchronous rectifiers?

Yes - the body diode is rated for -23 A continuous source current and -92 A pulsed, with trr = 140–210 ns and Qrr = 890–1340 nC. For CCM operation, ensure gate drive timing avoids cross-conduction and accounts for Qrr-induced voltage overshoot during turn-on.

IRF9540NSPBF Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
HEXFET®
Package/Case:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging:
Tube
Product Status:
Discontinued at Digi-Key
FET Type:
P-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
100 V
Current - Continuous Drain (Id) @ 25°C:
23A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
117mOhm @ 14A, 10V
Vgs(th) (Max) @ Id:
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
110 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
1450 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
3.1W (Ta), 110W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
D2PAK

IRF9540NSPBF FAQ

1.How can I place an order for IRF9540NSPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF9540NSPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF9540NSPBF reliable?

The price and inventory of IRF9540NSPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF9540NSPBF is usually 5 days.

3.What payment methods are accepted for IRF9540NSPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF9540NSPBF transactions.

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IRF9540NSPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF9540NSPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF9540NSPBF?

For technical support, including IRF9540NSPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF9540NSPBF requirements.

6.How does Aetrix verify that IRF9540NSPBF is sourced from the original manufacturer or authorized distributors?

All IRF9540NSPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF9540NSPBF meets industry standards.

7.What is the process for return or replacement of IRF9540NSPBF?

All IRF9540NSPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF9540NSPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF9540NSPBF part is unused and in its original packaging.

Return procedure for IRF9540NSPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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