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Infineon Technologies IRF9540NSTRR
- Part No.:
- IRF9540NSTRR
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
IRF9540NSTRR.pdf
- Description:
- MOSFET P-CH 100V 23A D2PAK
- Quantity:
- Payment:
- Shipping:
Inventory:7,962
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Product details
Overview
IRF9540NSTRR from Infineon Technologies is a P-channel enhancement-mode MOSFET in D2PAK (TO-263) package, rated for -100 V V(BR)DSS, 117 mΩ RDS(on) at VGS = -10 V and ID = -14 A, with 150°C maximum junction temperature and fast switching (tr = 64 ns, tf = 45 ns). It integrates a robust body diode (VSD = -1.6 V, trr = 140–210 ns) and supports repetitive avalanche operation up to Tjmax, making it suitable for high-reliability DC-DC synchronous rectification and industrial motor control.
For engineers reviewing the IRF9540NSTRR datasheet, IRF9540NSTRR pinout, IRF9540NSTRR application, or IRF9540NSTRR equivalent, key selection criteria include its -100 V blocking capability, low on-resistance at elevated temperature, avalanche-rated ruggedness, and D2PAK thermal performance for surface-mount power stage designs.
Technical Context
This device operates as a high-side or low-side P-channel switch in DC-DC converters and load-switching circuits, leveraging its negative gate threshold (-2.0 to -4.0 V) and low gate charge (Qg = 73–110 nC) for efficient PWM control. Its internal source/drain inductance (LS = 7.5 nH, LD = 4.5 nH) and capacitance profile (Ciss = 1450 pF, Crss = 230 pF) are optimized for reduced switching loss and EMI in hard-switched topologies.
The MOSFET's thermal design is anchored by RθJC = 1.1 °C/W (junction-to-case), enabling high-power dissipation when mounted on copper-clad PCBs with thermal vias. Repetitive avalanche rating (EAR = 300 mJ) and single-pulse energy handling (EAS = 11 mJ at TJ = 25°C) support fault-tolerant operation in inductive load switching without external snubbers.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| V(BR)DSS | -100 V - Maximum drain-source voltage before breakdown; enables use in 48 V and 60 V bus systems with margin. |
| RDS(on) | 117 mΩ @ VGS = -10 V, ID = -14 A - Low conduction loss at rated current; critical for efficiency in high-current switching. |
| Qg | 73–110 nC - Total gate charge determines driver strength requirement and switching speed trade-off. |
| tr / tf | 64 ns / 45 ns @ RG = 5.1 Ω - Fast edge rates reduce transition losses but require careful layout to manage ringing. |
| TJ max | 150°C - Enables operation in sealed enclosures or high-ambient environments without derating. |
| VSD | -1.6 V @ IS = -14 A - Forward voltage of integrated body diode; impacts reverse recovery loss in synchronous rectifier mode. |
| EAS | 11 mJ - Single-pulse avalanche energy capacity; defines safe operating area under inductive turn-off stress. |
Pinout & Package
IRF9540NSTRR uses the D2PAK (TO-263) surface-mount package with exposed drain pad for thermal and electrical connection. The package measures 10.16 × 15.37 mm and supports reflow soldering per JEDEC J-STD-020.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Drain (Tab) | Main current path output / heat sink interface | Exposed metal tab is electrically connected to drain; must be isolated from other potentials and thermally coupled to PCB copper. |
| Source | Reference node for gate drive and current return | Low-inductance source connection essential for stable gate control and minimizing shoot-through risk in half-bridge layouts. |
| Gate | Control input for channel modulation | High-impedance terminal requiring clean, low-impedance drive; Miller charge (Qgd = 38–57 nC) dominates turn-off timing. |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low RDS(on) | 117 mΩ at -14 A ensures <1.6 W conduction loss at full load-critical for thermally constrained PCBs. |
| Repetitive avalanche rated | Rated for repeated inductive switching events up to Tjmax, eliminating need for external clamping in many motor-drive applications. |
| Fast switching with low Qgd | 38–57 nC Miller charge enables crisp turn-off and reduces cross-conduction window in bridge configurations. |
| 150°C junction rating | Enables sustained operation in automotive under-hood or industrial control cabinets without forced air cooling. |
Applications
| Industrial Motor Control | DC-DC Synchronous Rectifier |
|---|---|
Use Scenario: Half-bridge high-side switch in 24–48 V BLDC motor gate drivers. IC Role / Device Role / Timing Role: P-channel high-side MOSFET providing controlled current sourcing during PWM phases. Use Value: Low RDS(on) and 150°C rating maintain efficiency and reliability across ambient temperatures up to 85°C. | Use Scenario: Secondary-side switch in isolated flyback or forward converter. IC Role / Device Role / Timing Role: Synchronous rectifier replacing Schottky diode to reduce conduction loss. Use Value: Integrated body diode with trr = 140–210 ns and VSD = -1.6 V enables soft recovery and lower forward drop than discrete diodes. |
| Hot-Swap Power Distribution | Overvoltage Protection Circuit |
Use Scenario: Inrush-limited power rail enable in telecom line cards or server backplanes. IC Role / Device Role / Timing Role: Load switch controlling power delivery to downstream circuitry. Use Value: Fast turn-on/off (td(on) = 13 ns, td(off) = 40 ns) allows precise sequencing and fault isolation. | Use Scenario: Crowbar element in overvoltage shutdown path for 48 V power supplies. IC Role / Device Role / Timing Role: Avalanche-rugged switch clamping transient overvoltage via controlled breakdown. Use Value: EAS = 11 mJ and EAR = 300 mJ permit repeated clamping of >100 V transients without degradation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF9540NPBF | Same die, TO-220 through-hole package; RθJA = 62 °C/W vs. 40 °C/W for D2PAK; no tape-and-reel packaging. | Better suited for prototyping or low-volume through-hole assembly; less optimal for automated SMT production. | Select when manual assembly or heatsink mounting is preferred over PCB thermal management. |
| STP9PF10 | Higher RDS(on) = 220 mΩ; lower V(BR)DSS = -100 V (same); Qg = 45 nC; TO-220 package. | Lower switching loss but higher conduction loss; not rated for repetitive avalanche. | Choose only for low-duty-cycle, low-current applications where avalanche immunity is not required. |
Compared with IRF9540NSTRR, IRF9540NPBF offers identical electrical performance in a through-hole format but sacrifices thermal efficiency and SMT compatibility, while STP9PF10 trades ruggedness and conduction efficiency for reduced gate drive demand and cost.
Availability
IRF9540NSTRR is available at Aetrix Electronics and suitable for industrial motor control, DC-DC synchronous rectification, hot-swap power distribution, and overvoltage protection requiring stable component supply and long-term manufacturability.
Supply support for IRF9540NSTRR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.
The IRF9540 series belongs to Infineon's legacy HEXFET® P-channel MOSFET product line, designed specifically for high-reliability, high-voltage switching in industrial power conversion and protection circuits.
FAQ
What is the maximum continuous drain current for IRF9540NSTRR at 100°C case temperature?
The maximum continuous drain current is -14 A at TC = 25°C and derates linearly to -9.2 A at TC = 100°C, based on the 1.1 °C/W RθJC and 150°C TJmax limit. This value assumes proper PCB copper area and thermal vias for heat extraction from the drain tab.
Does IRF9540NSTRR have a specified avalanche energy rating for repetitive operation?
Yes, IRF9540NSTRR is explicitly rated for repetitive avalanche energy (EAR) up to 300 mJ at TJ = 150°C, as confirmed in the Absolute Maximum Ratings table. This rating applies under defined test conditions (di/dt = -100 A/µs, VDD = -80 V) and supports reliable inductive switching without external snubbers.
Can IRF9540NSTRR be used in parallel with identical units?
Parallel operation is feasible due to its positive RDS(on) temperature coefficient, which promotes current sharing. However, matched gate drive layout (equal trace length/inductance) and individual gate resistors (≥5 Ω) are mandatory to prevent oscillation and ensure balanced dynamic current distribution during switching transitions.
Is the body diode in IRF9540NSTRR suitable for freewheeling in high-frequency PWM applications?
The body diode has trr = 140–210 ns and Qrr = 890–1340 nC, making it usable for ≤100 kHz freewheeling in non-synchronous topologies. For >100 kHz, synchronous rectification using an external N-channel FET is strongly recommended to avoid reverse recovery losses and associated EMI.
IRF9540NSTRR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 23A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 117mOhm @ 11A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 97 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1300 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 3.8W (Ta), 140W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- D2PAK
IRF9540NSTRR FAQ
1.How can I place an order for IRF9540NSTRR through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF9540NSTRR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF9540NSTRR reliable?
The price and inventory of IRF9540NSTRR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF9540NSTRR is usually 5 days.
3.What payment methods are accepted for IRF9540NSTRR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF9540NSTRR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF9540NSTRR?
IRF9540NSTRR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF9540NSTRR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF9540NSTRR?
For technical support, including IRF9540NSTRR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF9540NSTRR requirements.
6.How does Aetrix verify that IRF9540NSTRR is sourced from the original manufacturer or authorized distributors?
All IRF9540NSTRR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF9540NSTRR meets industry standards.
7.What is the process for return or replacement of IRF9540NSTRR?
All IRF9540NSTRR units undergo pre-shipment inspection (PSI). If there is an issue with IRF9540NSTRR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF9540NSTRR part is unused and in its original packaging.
Return procedure for IRF9540NSTRR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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