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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF9540NSTRRPBF

Name: IRF9540NSTRRPBF
Brand: Infineon Technologies
SKU: IRF9540NSTRRPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF9540NSTRRPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRF9540NSTRRPBF.pdf

Description:: MOSFET P-CH 100V 23A D2PAK

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Product details

Overview

IRF9540NSTRRPBF from Infineon Technologies is a P-channel enhancement-mode MOSFET in D2PAK (TO-263) package, rated for -100 V V(BR)DSS, 117 mΩ RDS(on) at VGS = -10 V and ID = -14 A, with 150°C maximum junction temperature and fast switching (tr = 64 ns, tf = 45 ns). It serves as a high-reliability power switch in DC-DC converters, motor control H-bridges, and industrial power supplies.

For engineers reviewing the IRF9540NSTRRPBF datasheet, IRF9540NSTRRPBF pinout, IRF9540NSTRRPBF application, or IRF9540NSTRRPBF equivalent, key selection criteria include its -100 V breakdown rating, 117 mΩ on-resistance at -10 V gate drive, repetitive avalanche capability up to Tjmax, 150°C operating temperature, and D2PAK thermal performance (RθJC = 1.1 °C/W).

Technical Context

This device uses advanced planar process technology optimized for low RDS(on) and robust avalanche performance. Its gate threshold voltage range (-2.0 V to -4.0 V) ensures reliable turn-on with standard logic-level negative gate drive, while the 73 nC total gate charge supports efficient high-frequency switching in hard-switched topologies.

The integrated body diode exhibits VSD = -1.6 V at IS = -14 A and trr = 140–210 ns, enabling synchronous rectification and freewheeling in buck and half-bridge configurations. Thermal design is supported by validated junction-to-case resistance of 1.1 °C/W and linear derating of 3.1 W/°C above 25°C case temperature.

Key Specifications

Parameter	Value and Actual Design Meaning
V(BR)DSS	-100 V - Withstands 100 V drain-source reverse bias before avalanche conduction begins.
RDS(on)	117 mΩ max @ VGS = -10 V, ID = -14 A - Enables low conduction loss in high-current P-channel switching paths.
Qg	73 nC typ - Determines gate driver power requirement and switching speed in PWM circuits.
TJ max	150°C - Supports operation in thermally constrained industrial enclosures without derating.
tr / tf	64 ns / 45 ns - Enables >100 kHz switching in SMPS while limiting switching losses.
EAS	300 mJ single-pulse - Provides ruggedness against inductive load transients without external snubbers.
RθJC	1.1 °C/W - Allows direct heatsink mounting for high-power dissipation with predictable thermal rise.

Pinout & Package

IRF9540NSTRRPBF is housed in a surface-mount D2PAK (TO-263) package with exposed drain pad for thermal and electrical connection. The package measures 10.16 mm × 15.24 mm × 4.83 mm and features gull-wing leads compatible with standard reflow profiles.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current path output terminal	Electrically and thermally connected to large copper tab; must be soldered to PCB copper pour or heatsink.
Source	Reference node for gate drive and current return	Connected to system ground or negative rail; defines VGS reference point for turn-on control.
Gate	Control input for channel conduction	High-impedance input requiring <100 nA leakage; driven with negative voltage relative to source to turn on.

Key Features

Feature	Design Value
Ultra-low RDS(on)	117 mΩ enables ≤1.6 W conduction loss at -14 A, reducing thermal stress in compact designs.
Repetitive avalanche rated	Rated for repeated EAS events up to TJmax - eliminates need for external clamping in inductive switching.
Fast switching	64 ns rise + 45 ns fall time supports high-frequency operation with minimized overlap loss.
150°C junction rating	Extends usable temperature margin beyond standard 125°C parts, improving reliability in sealed enclosures.
Lead-free construction	RoHS-compliant Pb-free plating and packaging meet industrial environmental compliance requirements.

Applications

Industrial Motor Control

DC-DC Power Conversion

Use Scenario: Half-bridge high-side switch in 24–48 V BLDC motor controllers for factory automation.

IC Role / Device Role / Timing Role: P-channel high-side power switch controlling phase voltage during commutation cycles.

Use Value: 117 mΩ RDS(on) limits conduction loss to <2.3 W at 14 A, while 150°C rating sustains operation under forced-air-limited heatsinking.

Use Scenario: Synchronous rectifier in isolated flyback or forward converter secondary side.

IC Role / Device Role / Timing Role: Low-loss replacement for Schottky diode in 12–24 V output stages.

Use Value: Body diode VSD = -1.6 V and trr = 140 ns enable higher efficiency than discrete diodes, especially at light loads.

Uninterruptible Power Supplies

Automotive Power Distribution

Use Scenario: Battery reverse-polarity protection and OR-ing function in 48 V telecom UPS systems.

IC Role / Device Role / Timing Role: Back-to-back configured P-MOSFET providing bidirectional blocking and low-loss conduction.

Use Value: -100 V rating accommodates 48 V nominal bus with 100% transient margin; 117 mΩ ensures <1.2 W loss at 10 A.

Use Scenario: Load switch for 12 V battery-fed infotainment subsystems with controlled inrush and fault isolation.

IC Role / Device Role / Timing Role: High-side power switch with integrated body diode for reverse-battery protection.

Use Value: Repetitive avalanche rating handles load-dump transients up to ISO 7637-2 Pulse 5a without external TVS.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF9540NPbF	Dual-inline TO-220 package; RθJA = 62 °C/W (vs. 40 °C/W for D2PAK); identical electrical specs.	Better suited for prototyping or low-volume through-hole assembly; lower thermal performance in high-power density layouts.	Select for manual soldering or legacy board compatibility where D2PAK footprint is unavailable.
STP9NK90ZFP	Zener-protected superjunction P-MOSFET; -900 V V(BR)DSS, 1.2 Ω RDS(on); higher voltage, much higher on-resistance.	Targeted at high-voltage AC-DC PFC stages, not low-voltage DC switching; not drop-in due to voltage/resistance mismatch.	Consider only for >400 V applications where IRF9540NSTRRPBF's -100 V rating is insufficient.

Compared with IRF9540NPbF, the D2PAK variant offers superior thermal resistance and surface-mount scalability; versus STP9NK90ZFP, it delivers 10× lower RDS(on) at one-tenth the voltage rating-making it optimal for 24–48 V industrial power switching where conduction loss dominates.

Availability

IRF9540NSTRRPBF is available at Aetrix Electronics and suitable for industrial motor control, DC-DC power conversion, uninterruptible power supplies, and automotive power distribution requiring stable component supply and long-term production continuity.

Supply support for IRF9540NSTRRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.

This part belongs to Infineon's StrongIRFET™ family, engineered for high-efficiency, high-reliability power switching in industrial and automotive applications demanding ruggedness and thermal stability.

FAQ

What is the maximum continuous drain current for IRF9540NSTRRPBF at 100°C case temperature?

The maximum continuous drain current is -14 A at TC = 25°C and -9.2 A at TC = 100°C, specified with VGS = -10 V. This derating reflects thermal limits imposed by the D2PAK package's RθJC = 1.1 °C/W and safe operating area constraints at elevated temperatures.

Does IRF9540NSTRRPBF have built-in gate protection?

No, IRF9540NSTRRPBF does not integrate gate Zener protection. Its absolute maximum VGS rating is ±20 V, and gate oxide withstands only brief transients within that limit. External gate resistors and clamping diodes are recommended in noisy or inductive drive environments.

Can IRF9540NSTRRPBF be used in synchronous rectification topologies?

Yes - its body diode has VSD = -1.6 V at -14 A and trr = 140–210 ns, making it viable for synchronous rectification in low-voltage (<24 V) DC-DC converters. However, dedicated synchronous rectifier MOSFETs offer lower Qrr and optimized gate drive timing.

How does the repetitive avalanche rating impact circuit design?

The device is rated for repetitive avalanche energy up to EAR = 84 mJ at TJ = 150°C. This allows operation in inductive switching circuits without external snubbers, provided peak current and voltage transients remain within the SOA boundary defined in the datasheet's avalanche curves.

IRF9540NSTRRPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 23A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 117mOhm @ 14A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 110 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1450 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 3.1W (Ta), 110W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

IRF9540NSTRRPBF FAQ

1.How can I place an order for IRF9540NSTRRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF9540NSTRRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF9540NSTRRPBF reliable?

The price and inventory of IRF9540NSTRRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF9540NSTRRPBF is usually 5 days.

3.What payment methods are accepted for IRF9540NSTRRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF9540NSTRRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF9540NSTRRPBF?

IRF9540NSTRRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF9540NSTRRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF9540NSTRRPBF?

For technical support, including IRF9540NSTRRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF9540NSTRRPBF requirements.

6.How does Aetrix verify that IRF9540NSTRRPBF is sourced from the original manufacturer or authorized distributors?

All IRF9540NSTRRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF9540NSTRRPBF meets industry standards.

7.What is the process for return or replacement of IRF9540NSTRRPBF?

All IRF9540NSTRRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF9540NSTRRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF9540NSTRRPBF part is unused and in its original packaging.

Return procedure for IRF9540NSTRRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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