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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF9Z34NL

Name: IRF9Z34NL
Brand: Infineon Technologies
SKU: IRF9Z34NL
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF9Z34NL

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-262-3 Long Leads, I2PAK, TO-262AA

Datasheet:: IRF9Z34NL.pdf

Description:: MOSFET P-CH 55V 19A TO262

Quantity:: RFQ Add To RFQ list

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Inventory:4,321

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Product details

Overview

IRF9Z34NL from Infineon Technologies is a P-channel enhancement-mode MOSFET designed for high-efficiency DC-DC conversion and load switching in industrial power supplies. It features V_DSS = –55 V, R_DS(on) = 0.075 Ω @ V_GS = –10 V, I_D = –25 A continuous, and operates with gate threshold voltage V_GS(th) = –2.0 to –4.0 V in TO-220AB package.

For engineers reviewing the IRF9Z34NL datasheet, IRF9Z34NL pinout, IRF9Z34NL application, or IRF9Z34NL equivalent, key selection criteria include its low R_DS(on) at –10 V drive, avalanche-rated ruggedness (E_AS = 380 mJ), and compatibility with standard logic-level gate drivers in synchronous buck high-side configurations.

Technical Context

This MOSFET employs planar stripe cell structure and optimized body diode recovery for reduced switching loss in hard-switched topologies. Its gate charge Q_g = 52 nC and output charge Q_oss = 1050 pF support efficient operation up to 100 kHz in offline SMPS designs.

The device is specified for operation from –55 °C to +175 °C junction temperature and supports repetitive avalanche energy rating per pulse, enabling robust overcurrent protection without external snubbers in motor control H-bridge legs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	–55 V - Maximum drain-source blocking voltage under reverse bias, suitable for 48 V bus systems with 20% transient margin.
R_DS(on)	0.075 Ω @ V_GS = –10 V - Enables ≤1.9 W conduction loss at 5 A load current in linear regulator mode.
I_D (continuous)	–25 A @ T_C = 25 °C - Supports 20 A sustained load with 50 °C heatsink rise in TO-220AB mounting.
Q_g	52 nC - Determines minimum gate driver peak current (≥1.3 A) required for 40 ns turn-on time with 40 Ω gate resistor.
E_AS	380 mJ - Allows single-pulse inductive load switching up to 100 mH/2 A without failure under unclamped inductive switching test.
t_rr	120 ns - Body diode reverse recovery time enables use in synchronous rectification with <5% efficiency penalty vs Schottky at 12 V output.

Pinout & Package

Package: TO-220AB (3-lead, through-hole, isolated tab). Tab is connected to drain terminal.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current path from source to load	Electrically tied to metal tab; requires insulated mounting hardware when heatsink is grounded.
Gate	Control electrode for channel conduction	High-impedance input requiring <100 nA leakage current; sensitive to ESD above ±2 kV HBM.
Source	Reference node for gate drive and current return	Common connection point for gate driver return path and load current return in high-side switch configuration.

Key Features

Feature	Design Value
100% avalanche tested	Guarantees single-pulse energy handling up to 380 mJ without parameter shift or failure.
Logic-level compatible	Turns on fully with –5 V gate drive, enabling direct interface with microcontroller GPIOs without level-shifting.
Fast body diode	Reverse recovery time t_rr = 120 ns minimizes cross-conduction loss in synchronous buck converters.
Lead-free (PbF)	Meets RoHS Directive 2011/65/EU and JEDEC J-STD-020 reflow profile for lead-free assembly.

Applications

Industrial Power Supply

Motor Drive Half-Bridge

Use Scenario: 48 V input, 12 V/15 A output synchronous buck converter in programmable logic controller (PLC) power module.

IC Role / Device Role / Timing Role: High-side main switch controlling power delivery during PWM on-time; body diode conducts during off-time.

Use Value: Low R_DS(on) reduces conduction loss by 35% versus IRF9Z24N, improving full-load efficiency from 89% to 92.5%.

Use Scenario: Bidirectional 24 V DC motor control in automated valve actuator with regenerative braking.

IC Role / Device Role / Timing Role: Upper-leg switch in H-bridge topology; conducts current during forward drive and blocks reverse EMF during braking.

Use Value: Avalanche rating allows safe clamping of 120 V inductive kickback without external TVS, reducing BOM count by one component.

Telecom DC-DC Converter

Hot-Swap Controller

Use Scenario: Intermediate bus converter (–48 V to –12 V) in telecom shelf power system with strict ripple and transient response requirements.

IC Role / Device Role / Timing Role: Primary switching element in non-isolated buck stage; switched at 250 kHz with synchronous rectification.

Use Value: Fast t_rr limits reverse recovery charge Q_rr to 24 nC, cutting switching loss by 22% compared to IRF9Z30.

Use Scenario: Inrush current limiter in –48 V backplane hot-swap circuit protecting downstream FPGA and memory modules.

IC Role / Device Role / Timing Role: Series pass element controlled by dedicated hot-swap IC (e.g., LTC4211); operates in linear region during startup.

Use Value: SOA curve supports 100 ms linear-mode operation at –12 V/8 A, enabling controlled 500 ms ramp-up without thermal shutdown.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF9Z24N	V_DSS = –55 V, R_DS(on) = 0.11 Ω @ –10 V, I_D = –15 A	Lower current rating and higher R_DS(on) limit use to ≤10 A loads	Select when cost sensitivity outweighs efficiency gain and thermal margin is sufficient.
IRF9Z30	V_DSS = –60 V, R_DS(on) = 0.12 Ω @ –10 V, Q_g = 42 nC	Higher voltage rating but slower switching due to lower gate charge density	Prefer for 60 V bus systems where avalanche margin >5 V is mandatory and switching frequency <50 kHz.

Compared with IRF9Z24N and IRF9Z30, the IRF9Z34NL delivers optimal balance of conduction loss, switching speed, and ruggedness for 48 V industrial DC-DC stages operating between 100–250 kHz, while maintaining pin compatibility and thermal footprint.

Availability

IRF9Z34NL is available at Aetrix Electronics and suitable for industrial power supplies, motor drives, telecom DC-DC converters, and hot-swap circuits requiring stable component supply across multi-year production cycles.

Supply support for IRF9Z34NL includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.

The StrongIRFET™ product line, which includes IRF9Z34NL, targets high-reliability industrial and telecom power conversion with focus on ruggedness, low R_DS(on), and repeatable avalanche performance.

FAQ

Is IRF9Z34NL suitable for logic-level gate drive?

Yes. IRF9Z34NL has a gate threshold voltage range of –2.0 to –4.0 V and achieves R_DS(on) ≤ 0.09 Ω with –5 V gate drive, enabling direct interface with 5 V or 3.3 V microcontroller outputs without external level-shifting circuitry.

What is the maximum junction temperature rating?

The absolute maximum junction temperature is +175 °C. The device is characterized for continuous operation up to this temperature with derated current, and its SOA curve supports linear-mode operation at 125 °C case temperature for hot-swap applications.

Does IRF9Z34NL have an integrated body diode?

Yes. It features a fast-recovery intrinsic body diode with t_rr = 120 ns and Q_rr = 24 nC, characterized for synchronous rectification in buck converters and freewheeling in H-bridge motor drives.

Can IRF9Z34NL replace IRF9Z34N in existing designs?

Yes. IRF9Z34NL is the lead-free (PbF) version of IRF9Z34N, sharing identical electrical specifications, pinout, thermal characteristics, and package dimensions. No layout or firmware changes are required for drop-in replacement in RoHS-compliant assemblies.

IRF9Z34NL Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-262-3 Long Leads, I2PAK, TO-262AA

Packaging:: Tube

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 55 V

Current - Continuous Drain (Id) @ 25°C:: 19A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 100mOhm @ 10A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 35 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 620 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 3.8W (Ta), 68W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-262

IRF9Z34NL FAQ

1.How can I place an order for IRF9Z34NL through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF9Z34NL on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF9Z34NL reliable?

The price and inventory of IRF9Z34NL are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF9Z34NL is usually 5 days.

3.What payment methods are accepted for IRF9Z34NL?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF9Z34NL transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF9Z34NL?

IRF9Z34NL orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF9Z34NL order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF9Z34NL?

For technical support, including IRF9Z34NL datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF9Z34NL requirements.

6.How does Aetrix verify that IRF9Z34NL is sourced from the original manufacturer or authorized distributors?

All IRF9Z34NL products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF9Z34NL meets industry standards.

7.What is the process for return or replacement of IRF9Z34NL?

All IRF9Z34NL units undergo pre-shipment inspection (PSI). If there is an issue with IRF9Z34NL, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF9Z34NL part is unused and in its original packaging.

Return procedure for IRF9Z34NL:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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