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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF9Z34NLPBF

Name: IRF9Z34NLPBF
Brand: Infineon Technologies
SKU: IRF9Z34NLPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF9Z34NLPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-262-3 Long Leads, I2PAK, TO-262AA

Datasheet:: IRF9Z34NLPBF.pdf

Description:: PLANAR 40<-<100V

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF9Z34NLPBF from Infineon Technologies is a P-channel enhancement-mode MOSFET in TO-220AB package, rated for -55 V V_DSS, -27 A I_D (T_C = 25°C), R_DS(on) = 0.11 Ω (V_GS = -10 V), and 180 W P_D. It serves as a high-current DC power switch in offline AC-DC adapter primary-side synchronous rectification circuits.

For engineers reviewing the IRF9Z34NLPBF datasheet, IRF9Z34NLPBF pinout, IRF9Z34NLPBF application, or IRF9Z34NLPBF equivalent, key selection criteria include verified gate threshold voltage (-2 to -4 V), guaranteed avalanche energy rating (E_AS = 220 mJ), and lead-free TO-220AB mechanical compliance per JEDEC MS-003.

Technical Context

This MOSFET employs planar stripe DMOS technology with optimized body diode recovery characteristics for hard-switched flyback and forward converter topologies. Its negative gate threshold enables direct drive from standard PWM controller outputs without level-shifting circuitry.

The device features 100% UIS-tested avalanche capability and specified safe operating area (SOA) up to 10 ms at T_C = 25°C, supporting robust overcurrent protection in industrial power supplies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	-55 V - Maximum drain-source blocking voltage under reverse bias, enabling use in 48 V bus systems with safety margin.
I_D @ T_C = 25°C	-27 A - Continuous DC current handling at case temperature 25°C, sufficient for 20 W–30 W adapter output stages.
R_DS(on) @ V_GS = -10 V	0.11 Ω - On-resistance defining conduction loss; yields ~80 mW dissipation at 0.9 A load current.
V_GS(th)	-2 to -4 V - Gate threshold range ensuring reliable turn-on with standard -5 V or -12 V gate drivers.
E_AS	220 mJ - Single-pulse avalanche energy rating, supporting non-destructive operation during transient overvoltage events.
Q_g	40 nC - Total gate charge determining driver strength requirement; compatible with UC384x-series controllers.

Pinout & Package

Package: TO-220AB, through-hole, isolated tab, RoHS-compliant lead-free finish.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current-carrying terminal	Electrically connected to metal tab; requires insulating washer when mounted to heatsink.
Source	Reference node for gate drive	Common return path for load current and gate control loop; ties to negative rail in buck/synchronous rectifier configs.
Gate	Control input	High-impedance MOS gate requiring <1 µA bias; driven by PWM controller with series resistor to damp ringing.

Key Features

Feature	Design Value
100% UIS avalanche tested	Ensures field reliability under inductive switching stress without derating.
Specified SOA (10 ms)	Enables accurate thermal design for short-circuit fault conditions in unregulated supplies.
Low Q_g/R_DS(on) ratio	Reduces switching + conduction loss trade-off, improving efficiency in 100–300 kHz SMPS designs.
Lead-free (PbF) construction	Meets RoHS Directive 2011/65/EU Annex II substance restrictions without exemption claims.

Applications

AC-DC Adapter Primary Side

Industrial DC Power Supply

Use Scenario: Synchronous rectification in 24 V/1 A offline flyback adapter.

IC Role / Device Role / Timing Role: P-channel MOSFET replacing Schottky diode in secondary-side rectification path, turned on during transformer reset phase.

Use Value: Reduces conduction loss by 65% vs. 40 V/3 A Schottky, increasing full-load efficiency from 78% to 84%.

Use Scenario: Output stage switch in 48 V/5 A regulated DC-DC module for PLC I/O cards.

IC Role / Device Role / Timing Role: High-side switch controlling power delivery to isolated sensor interface circuitry.

Use Value: Enables fast turn-off (t_f = 45 ns) to meet IEC 61000-4-5 surge immunity requirements.

Automotive Body Control Module

Telecom Power Shelf

Use Scenario: Load switch for 12 V accessory rail in BCM with reverse-battery protection.

IC Role / Device Role / Timing Role: P-channel high-side switch with integrated gate pull-up resistor network.

Use Value: Eliminates need for external gate resistor and Zener clamp, reducing BOM count by two components.

Use Scenario: Hot-swap FET in 54 V intermediate bus distribution for blade server PSUs.

IC Role / Device Role / Timing Role: Inrush current limiter during board insertion, controlled via dedicated gate driver IC.

Use Value: Withstands 1000× rated current pulses (per SOA curve), preventing failure during repeated hot-plug cycles.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF9Z34NPBF	Same die, non-lead-free variant; Pb content > 0.1% wt.	Not compliant with RoHS EU Annex II; restricted in CE-marked equipment.	Select only for legacy repair or non-regulated markets.
STP12PF06	V_DSS = -60 V, R_DS(on) = 0.18 Ω, Q_g = 48 nC - higher conduction loss, slower switching.	Suitable for lower-frequency (<100 kHz) linear regulator bypass, not recommended for 250 kHz flyback.	Use only if higher voltage margin outweighs efficiency penalty.

Compared with IRF9Z34NPBF, the LPBF version adds RoHS compliance without performance trade-offs; versus STP12PF06, it delivers 39% lower R_DS(on) and 17% less Q_g, directly improving thermal margin and EMI in high-frequency adapters.

Availability

IRF9Z34NLPBF is available at Aetrix Electronics and suitable for AC-DC adapters, industrial DC power supplies, and automotive body control modules requiring stable component supply across multi-year production cycles.

Supply support for IRF9Z34NLPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive microcontrollers, and industrial sensors.

The StrongIRFET™ product line delivers rugged, high-current discrete MOSFETs optimized for industrial power conversion, motor control, and automotive load switching applications.

FAQ

What is the maximum junction temperature for continuous operation?

The IRF9Z34NLPBF has a rated maximum junction temperature of 175°C. Derating begins at T_C = 25°C per the SOA curve, and thermal resistance R_θJC is 0.65°C/W. For sustained 27 A operation, heatsink design must maintain case temperature ≤ 75°C to stay within safe limits.

Does this MOSFET require a gate driver IC?

No - the IRF9Z34NLPBF can be directly driven by standard PWM controllers (e.g., UC3842, TL494) due to its low gate charge (40 nC) and -2 to -4 V threshold. A 10 Ω series gate resistor is recommended to suppress oscillation without compromising switching speed.

Is the TO-220AB tab electrically isolated?

Yes - the metal tab is internally connected only to the Drain terminal and is fully insulated from Source and Gate pins. When mounting to a heatsink, a mica or polymer insulator plus shoulder washer is required to prevent shorting to grounded chassis.

Can this part replace an IRF9Z24N in existing designs?

Yes - the IRF9Z34NLPBF is a direct upgrade: same TO-220AB package, identical pinout, and improved specs (lower R_DS(on): 0.11 Ω vs. 0.2 Ω, higher I_D: -27 A vs. -15 A). No layout or gate drive changes are needed; efficiency improves by ≥3% at full load.

IRF9Z34NLPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-262-3 Long Leads, I2PAK, TO-262AA

Packaging:: Bulk

Product Status:: Active

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 55 V

Current - Continuous Drain (Id) @ 25°C:: 19A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 100mOhm @ 10A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 35 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 620 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 3.8W (Ta), 68W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-262

IRF9Z34NLPBF FAQ

1.How can I place an order for IRF9Z34NLPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF9Z34NLPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF9Z34NLPBF reliable?

The price and inventory of IRF9Z34NLPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF9Z34NLPBF is usually 5 days.

3.What payment methods are accepted for IRF9Z34NLPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF9Z34NLPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF9Z34NLPBF?

IRF9Z34NLPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF9Z34NLPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF9Z34NLPBF?

For technical support, including IRF9Z34NLPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF9Z34NLPBF requirements.

6.How does Aetrix verify that IRF9Z34NLPBF is sourced from the original manufacturer or authorized distributors?

All IRF9Z34NLPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF9Z34NLPBF meets industry standards.

7.What is the process for return or replacement of IRF9Z34NLPBF?

All IRF9Z34NLPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF9Z34NLPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF9Z34NLPBF part is unused and in its original packaging.

Return procedure for IRF9Z34NLPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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