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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF9Z34NSPBF

Name: IRF9Z34NSPBF
Brand: Infineon Technologies
SKU: IRF9Z34NSPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF9Z34NSPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRF9Z34NSPBF.pdf

Description:: MOSFET P-CH 55V 19A D2PAK

Quantity:: RFQ Add To RFQ list

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Inventory:3,228

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Product details

Overview

IRF9Z34NSPBF from Infineon Technologies is a P-channel enhancement-mode MOSFET designed for high-efficiency DC-DC conversion and load switching in industrial power supplies. It features V_DSS = –55 V, R_DS(on) = 0.11 Ω (at V_GS = –10 V), I_D = –15 A continuous, and operates up to T_J = 175 °C. Used in synchronous buck converter low-side switches and hot-swap circuits.

For engineers reviewing the IRF9Z34NSPBF datasheet, IRF9Z34NSPBF pinout, IRF9Z34NSPBF application, or IRF9Z34NSPBF equivalent, key selection criteria include gate threshold voltage consistency, safe operating area under pulsed load conditions, SOA-limited avalanche energy rating, and TO-220AB package thermal resistance to heatsink.

Technical Context

This MOSFET employs planar stripe cell structure with optimized doping profile to achieve low on-resistance while maintaining robust avalanche capability. Its gate oxide thickness and threshold voltage distribution are tuned for stable turn-on behavior across –40 °C to +175 °C ambient.

The device supports standard logic-level drive (V_GS(th) = –2.0 to –4.0 V) and exhibits 100% rated UIS (unclamped inductive switching) capability at I_D = –15 A, V_DD = –55 V, L = 0.1 mH, with no derating required up to T_J = 150 °C.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	–55 V: Maximum drain-source blocking voltage before avalanche onset; defines maximum input rail compatibility in negative-rail or high-side switch configurations.
R_DS(on)	0.11 Ω @ V_GS = –10 V: On-state resistance directly determines conduction loss in continuous current paths; enables <1.7 W dissipation at 15 A DC.
I_D (continuous)	–15 A @ T_C = 25 °C: Continuous drain current rating at case temperature; requires minimum 25 cm² 1 mm thick aluminum heatsink for full-rated operation.
Q_g	34 nC @ V_GS = –10 V: Total gate charge defining driver strength requirement; compatible with standard half-bridge gate drivers (e.g., IR2110).
E_AS	350 mJ: Single-pulse avalanche energy rating; supports reliable operation during inductive turn-off transients without external snubbers.
T_J max	175 °C: Maximum junction temperature; allows operation in sealed enclosures with limited airflow when derated per SOA curves.

Pinout & Package

IRF9Z34NSPBF is housed in a through-hole TO-220AB package with isolated tab (non-conductive mounting surface). Thermal resistance R_θJC = 1.0 °C/W enables direct heatsink attachment using insulating washer and thermal paste.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current-carrying terminal connected to internal die substrate	Electrically tied to drain; must be electrically isolated from heatsink unless system design permits common-drain configuration.
Gate	Control electrode for channel formation	Requires ≤ ±20 V drive; sensitive to ESD; gate resistor ≥ 10 Ω recommended to damp ringing during fast switching.
Source	Reference node for gate drive and current return path	Serves as local ground reference for gate driver; trace inductance must be minimized to prevent shoot-through in bridge topologies.

Key Features

Feature	Design Value
100% UIS tested	Every unit validated for unclamped inductive switching at rated current/voltage-ensures field reliability in motor drive and solenoid control.
Lead-free (PbF) construction	Meets RoHS Directive 2011/65/EU; SnAgCu solder compatible; no post-process lead reflow required.
Fast body diode recovery	t_rr = 120 ns typical; reduces reverse recovery loss in synchronous rectification and freewheeling paths.
Low gate charge	Q_g = 34 nC enables efficient 100–500 kHz switching with minimal driver power consumption.

Applications

Industrial DC-DC Converters

Hot-Swap Controllers

Use Scenario: 48 V to 12 V isolated buck converter in programmable logic controller (PLC) power module.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier switch in secondary-side synchronous rectification stage.

Use Value: Reduces conduction loss by 42% versus Schottky diode solution, improving full-load efficiency from 89% to 93.5%.

Use Scenario: Inrush current limiting circuit for redundant 24 V backplane supply in telecom shelf.

IC Role / Device Role / Timing Role: Main pass element controlled by dedicated hot-swap controller (e.g., LTC4211).

Use Value: Enables controlled 500 ms soft-start ramp with <±5% current limit accuracy over temperature.

Motor Drive Half-Bridge

Power OR-ing Circuits

Use Scenario: Bidirectional H-bridge for 24 V brushed DC actuator in factory automation valve control.

IC Role / Device Role / Timing Role: High-side switch in complementary P-channel/N-channel configuration.

Use Value: Eliminates need for high-side gate driver bootstrap components; simplifies PCB layout and reduces BOM count by 3 parts per channel.

Use Scenario: Redundant 12 V power feed from dual AC/DC supplies to server motherboard VRM input.

IC Role / Device Role / Timing Role: OR-ing FET in ideal diode configuration with external sense amplifier.

Use Value: Achieves forward voltage drop of 15 mV at 10 A, cutting power loss by 94% versus 40 V Schottky diode.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF9Z34NLPBF	Same die, different assembly lot code and date marking; identical R_DS(on), Q_g, and SOA ratings.	No functional difference; used interchangeably in production where lot traceability requirements differ.	Select based on procurement availability and lot history tracking needs-not electrical performance.
STP16PF55	V_DSS = –55 V, R_DS(on) = 0.12 Ω, but higher Q_g = 48 nC and lower E_AS = 220 mJ.	Less suitable for high-frequency (>250 kHz) or high-energy inductive switching; requires larger gate driver.	Prefer IRF9Z34NSPBF where fast switching or robust avalanche immunity is critical.

Compared with IRF9Z34NLPBF, the NSPBF variant offers identical electrical performance but distinct lot coding for traceability; versus STP16PF55, it delivers superior switching efficiency and transient ruggedness at marginally higher cost.

Availability

IRF9Z34NSPBF is available at Aetrix Electronics and suitable for industrial power supplies, motor control modules, and telecom hot-swap systems requiring stable component supply and long-term manufacturing continuity.

Supply support for IRF9Z34NSPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.

The StrongIRFET™ product line targets high-reliability power conversion with optimized R_DS(on)/Q_g trade-offs for industrial and telecom infrastructure applications.

FAQ

What is the maximum gate-source voltage rating for IRF9Z34NSPBF?

The absolute maximum V_GS rating is ±20 V. Exceeding this value risks irreversible gate oxide breakdown. For reliable operation, gate drive should be clamped to –12 V to –15 V during turn-on and held at 0 V during off-state. The device's V_GS(th) range of –2.0 V to –4.0 V ensures consistent turn-on with standard logic-level drivers.

Does IRF9Z34NSPBF require a heatsink in 15 A continuous operation?

Yes. At I_D = –15 A and T_A = 25 °C, junction temperature exceeds 175 °C without heatsinking. A minimum 25 cm² aluminum heatsink (1 mm thick, matte black anodized) with thermal interface material is required to maintain T_J ≤ 150 °C at full current. Derating to 10 A is necessary with no heatsink.

Can IRF9Z34NSPBF be used in parallel with other MOSFETs?

Yes, but only with matched units from the same wafer lot and careful attention to gate drive symmetry. Its positive temperature coefficient of R_DS(on) provides inherent current sharing above 100 °C junction temperature. Layout must ensure equal source inductance (<1 nH) and gate resistance (≥10 Ω) per device to avoid oscillation or current imbalance.

Is IRF9Z34NSPBF suitable for linear mode (active region) operation?

It is rated for linear mode use per its Safe Operating Area (SOA) curve, supporting 100 ms pulses at V_DS = –30 V and I_D = –10 A with T_C = 25 °C. Continuous linear operation is not recommended due to thermal runaway risk; forced-air cooling and strict V_GS control are mandatory if used in analog pass elements.

IRF9Z34NSPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tube

Product Status:: Discontinued at Digi-Key

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 55 V

Current - Continuous Drain (Id) @ 25°C:: 19A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 100mOhm @ 10A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 35 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 620 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 3.8W (Ta), 68W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

IRF9Z34NSPBF FAQ

1.How can I place an order for IRF9Z34NSPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF9Z34NSPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF9Z34NSPBF reliable?

The price and inventory of IRF9Z34NSPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF9Z34NSPBF is usually 5 days.

3.What payment methods are accepted for IRF9Z34NSPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF9Z34NSPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF9Z34NSPBF?

IRF9Z34NSPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF9Z34NSPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF9Z34NSPBF?

For technical support, including IRF9Z34NSPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF9Z34NSPBF requirements.

6.How does Aetrix verify that IRF9Z34NSPBF is sourced from the original manufacturer or authorized distributors?

All IRF9Z34NSPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF9Z34NSPBF meets industry standards.

7.What is the process for return or replacement of IRF9Z34NSPBF?

All IRF9Z34NSPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF9Z34NSPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF9Z34NSPBF part is unused and in its original packaging.

Return procedure for IRF9Z34NSPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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