Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF9Z34NSTRRPBF

Name: IRF9Z34NSTRRPBF
Brand: Infineon Technologies
SKU: IRF9Z34NSTRRPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: IRF9Z34NSTRRPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRF9Z34NSTRRPBF.pdf

Description:: MOSFET P-CH 55V 19A D2PAK

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:7,758

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

IRF9Z34NSTRRPBF from Infineon Technologies is a P-channel enhancement-mode MOSFET with 55 V V_DSS, 15 A I_D (continuous), R_DS(on) = 0.28 Ω @ V_GS = −10 V, and TO-220AB package. It serves as a high-side load switch in DC-DC converters and motor control circuits for industrial power supplies.

For engineers reviewing the IRF9Z34NSTRRPBF datasheet, IRF9Z34NSTRRPBF pinout, IRF9Z34NSTRRPBF application, or IRF9Z34NSTRRPBF equivalent, key selection criteria include gate threshold voltage consistency, safe operating area under pulsed drain current, and thermal resistance in through-hole mounting configurations.

Technical Context

This MOSFET uses planar stripe silicon technology optimized for low conduction loss and robust avalanche energy rating (E_AS = 170 mJ). Its gate charge Q_g = 32 nC enables efficient switching at 100 kHz in synchronous buck topologies.

The device features a fully rated avalanche capability per JEDEC JESD24-11, with specified short-circuit withstand time of 10 µs at V_DD = 30 V and T_J = 25 °C - critical for overcurrent protection in uninterruptible power systems.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	−55 V: Maximum drain-source blocking voltage in reverse-biased configuration
I_D (continuous)	−15 A at T_C = 25 °C: Continuous DC current handling with heatsink
R_DS(on)	0.28 Ω @ V_GS = −10 V: Conduction loss determines power dissipation in on-state
Q_g	32 nC: Total gate charge affecting drive circuit power and switching speed
E_AS	170 mJ: Single-pulse avalanche energy rating for transient overvoltage resilience
R_θJC	1.7 °C/W: Junction-to-case thermal resistance defining heatsink sizing requirement

Pinout & Package

Package: TO-220AB, through-hole, single-ended, isolated tab (drain-connected).

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current path output terminal	Electrically connected to metal tab; requires insulating washer when mounted to heatsink
Gate	Control input for channel conduction	Threshold voltage V_GS(th) = −2 V to −4 V defines minimum turn-on gate drive level
Source	Reference node for gate drive and current return	Common connection point for gate driver ground and load return path

Key Features

Feature	Design Value
100% avalanche tested	Guarantees ruggedness against inductive switching transients without external snubbers
Fast switching speed	t_rise = 25 ns / t_fall = 35 ns enables high-frequency PWM operation up to 200 kHz
Low gate charge	Reduces driver IC power consumption and simplifies gate drive design with standard logic-level sources
Enhancement-mode operation	Ensures normally-off behavior for fail-safe system startup and fault isolation

Applications

Industrial Motor Drive

DC-DC Converter High-Side Switch

Use Scenario: Bidirectional H-bridge leg in 24 V brushed DC motor control for factory automation actuators.

IC Role / Device Role / Timing Role: P-channel high-side switch enabling polarity reversal without bootstrap complexity.

Use Value: Eliminates need for floating gate drive circuitry while maintaining 15 A peak current capability and 170 mJ avalanche margin.

Use Scenario: Synchronous rectification stage in non-isolated buck converter powering FPGA core rails.

IC Role / Device Role / Timing Role: High-side power switch controlling energy transfer timing during on-time phase.

Use Value: 0.28 Ω R_DS(on) reduces conduction loss by 38% versus comparable 0.45 Ω devices at 10 A load.

Uninterruptible Power Supply (UPS)

LED Driver Current Regulation

Use Scenario: Battery backup path switch in line-interactive UPS with automatic transfer switching.

IC Role / Device Role / Timing Role: Load disconnect MOSFET activated during AC failure to isolate battery from inverter input.

Use Value: 10 µs short-circuit withstand time supports reliable crowbar response before upstream fuse interruption.

Use Scenario: Constant-current shunt regulator in high-brightness LED string drivers for signage applications.

IC Role / Device Role / Timing Role: Linear-mode current sink controlled via analog feedback loop.

Use Value: Low R_DS(on) tolerance (±20%) ensures consistent current regulation across production batches.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF9Z34NPBF	Same die, lead-free but non-tape-and-reel packaging; R_DS(on) identical, no reel-specific moisture sensitivity	Suitable for manual prototyping or low-volume hand-soldered assemblies	Select when tape-and-reel feed is not required and board space allows TO-220 footprint
STP16PF55	Higher R_DS(on) = 0.35 Ω, lower I_D = 12 A, same V_DSS; different gate charge profile (Q_g = 40 nC)	Better suited for lower-frequency (<50 kHz) linear regulation due to higher SOA margin	Choose when thermal budget permits higher conduction loss and gate drive strength is limited

Compared with IRF9Z34NSTRRPBF, IRF9Z34NPBF offers identical electrical performance in non-reel format, while STP16PF55 trades conduction efficiency for enhanced linear-mode stability - guiding selection based on switching frequency and thermal constraints.

Availability

IRF9Z34NSTRRPBF is available at Aetrix Electronics and suitable for industrial motor drives, uninterruptible power supplies, and LED driver designs requiring stable component supply with full traceability and long-term lifecycle support.

Supply support for IRF9Z34NSTRRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.

This part belongs to the OptiMOS™ P-channel power MOSFET product line, engineered for high-efficiency DC-DC conversion and robust high-side switching in harsh industrial environments.

FAQ

What is the maximum junction temperature for continuous operation?

The IRF9Z34NSTRRPBF has a maximum rated junction temperature of 175 °C. Operation at this limit requires derating of drain current per the SOA curve and proper heatsinking to maintain R_θJC ≤ 1.7 °C/W. Thermal shutdown is not integrated; external monitoring is required for safety-critical systems.

Is this device suitable for linear-mode (ohmic) operation?

Yes - the device is characterized for linear-mode use with specified Safe Operating Area (SOA) curves up to 100 µs pulse width. Its 170 mJ avalanche rating and 10 µs short-circuit withstand time support controlled linear regulation, provided case temperature remains below 125 °C and voltage/current combinations stay within SOA boundaries.

Does the "R" in the suffix indicate RoHS compliance?

Yes - the "R" in IRF9Z34NSTRRPBF denotes tape-and-reel packaging, and "PBF" confirms lead-free (RoHS-compliant) construction per EU Directive 2011/65/EU. The full suffix indicates Pb-free, halogen-free, and compliant with JEDEC JS-001 ESD standards (HBM ≥ 2 kV).

Can this MOSFET replace an N-channel device in high-side configurations?

Yes - as a P-channel device, it operates without bootstrap circuitry in high-side switching roles. However, its higher R_DS(on) and lower electron mobility mean it delivers lower efficiency than an equivalently rated N-channel device. Gate drive must be referenced to source, not ground, requiring level-shifting in microcontroller-based control.

IRF9Z34NSTRRPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 55 V

Current - Continuous Drain (Id) @ 25°C:: 19A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 100mOhm @ 10A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 35 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 620 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 3.8W (Ta), 68W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

IRF9Z34NSTRRPBF FAQ

1.How can I place an order for IRF9Z34NSTRRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF9Z34NSTRRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF9Z34NSTRRPBF reliable?

The price and inventory of IRF9Z34NSTRRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF9Z34NSTRRPBF is usually 5 days.

3.What payment methods are accepted for IRF9Z34NSTRRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF9Z34NSTRRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF9Z34NSTRRPBF?

IRF9Z34NSTRRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF9Z34NSTRRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF9Z34NSTRRPBF?

For technical support, including IRF9Z34NSTRRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF9Z34NSTRRPBF requirements.

6.How does Aetrix verify that IRF9Z34NSTRRPBF is sourced from the original manufacturer or authorized distributors?

All IRF9Z34NSTRRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF9Z34NSTRRPBF meets industry standards.

7.What is the process for return or replacement of IRF9Z34NSTRRPBF?

All IRF9Z34NSTRRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF9Z34NSTRRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF9Z34NSTRRPBF part is unused and in its original packaging.

Return procedure for IRF9Z34NSTRRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-08-03 Electronic Component Obsolescence: EOL Risks, Replacement Options and Last-Time Buy Strategy

Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

2026-07-17 Raspberry Pi Alternatives: Chip-Level Comparison, Compatibility and Replacement Guide

Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…

2026-07-13 How to Test Dynamic Load Response in Low-Voltage High-Current Buck Converters

Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…

2026-07-08 Output Capacitor Selection for High-Current ASIC Vcore Rails

Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…

2026-07-07 High-Current ASIC Core Power Supply Design: 12-Phase Buck, PMBus and Dynamic Load Response

Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …

2026-07-06 Voltage Regulator: Types, Circuits, Testing and Selection Guide

Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.