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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFB23N15DPBF

Name: IRFB23N15DPBF
Brand: Infineon Technologies
SKU: IRFB23N15DPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFB23N15DPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IRFB23N15DPBF.pdf

Description:: MOSFET N-CH 150V 23A TO220AB

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRFB23N15DPBF from Infineon Technologies (formerly International Rectifier) is a 150V, 23A N-channel enhancement-mode power MOSFET in TO-262 (I²PAK) package, optimized for high-frequency DC-DC converters and active-clamp forward topologies. It features 0.090Ω R_DS(on) at V_GS = 10V, 37nC total gate charge, and fully characterized C_oss (210pF effective) to simplify snubberless design.

For engineers reviewing the IRFB23N15DPBF datasheet, IRFB23N15DPBF pinout, IRFB23N15DPBF application, or IRFB23N15DPBF equivalent, key selection criteria include avalanche energy rating (260mJ), diode reverse recovery time (150–220ns), gate charge profile, thermal resistance (R_θJC = 1.1°C/W), and lead-free compliance per JEDEC TO-262 outline.

Technical Context

This HEXFET device uses planar stripe silicon technology with optimized charge distribution to minimize Q_gd/Q_g ratio (19/37nC typical), enabling fast, low-loss switching in hard-switched SMPS. Its fully characterized C_oss vs. V_DS curve and effective C_oss (210pF) support accurate zero-voltage switching (ZVS) timing prediction in resonant and active-clamp circuits.

The integrated body diode exhibits 1.3V forward drop at 14A and 150ns typical reverse recovery time under 100A/µs di/dt - critical for minimizing commutation loss in synchronous rectification and bidirectional power stages. Avalanche capability is rated for single-pulse E_AS = 260mJ at T_J = 25°C.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	150V - Maximum blocking voltage for 48V-input telecom DC-DC stages with 2× input margin
R_DS(on) max	0.090Ω @ V_GS = 10V, I_D = 14A - Enables <1.5W conduction loss at 14A continuous current
Q_g typ	37nC - Determines gate drive power requirement and switching speed in 100–500kHz designs
C_oss,eff	210pF - Used directly in ZVS transition time calculation (t_ZVS ≈ C_oss,eff × V_DS / I_res)
E_AS	260mJ - Supports unclamped inductive switching in active-clamp reset without external snubber
R_θJC	1.1°C/W - Enables 136W power dissipation at T_C = 25°C with minimal heatsink interface resistance
t_rr	150–220ns - Limits diode recovery-induced voltage overshoot during high-di/dt turn-on of complementary switch

Pinout & Package

IRFB23N15DPBF is housed in a TO-262 (I²PAK) surface-mount-compatible package with isolated tab (drain-connected), compliant with JEDEC MO-215. The package supports high-current PCB mounting and direct heatsinking via the drain pad.

Pin/Terminal	Circuit Role	Design Meaning
1 – Gate	Control electrode	Receives 10V logic-level drive; 37nC total charge requires ≥2A peak gate driver for <20ns rise time
2 – Drain	Main current path (high-side)	Internally connected to metal tab; must be electrically isolated from heatsink unless system ground referenced
3 – Source	Reference node for gate drive	Serves as return path for load current and gate drive loop; low-inductance layout essential for EMI control
4 – Drain	Secondary drain connection	Redundant drain terminal for enhanced current sharing and thermal spreading in high-power PCB layouts

Key Features

Feature	Design Value
Low Q_gd/Q_g ratio	19/37nC typical - Reduces Miller-induced switching delay and improves controllability in high-dV/dt environments
Fully characterized C_oss	210pF effective value validated from 0–120V - Eliminates estimation error in soft-switching timing calculations
Enhanced avalanche ruggedness	260mJ single-pulse rating - Allows reliable operation in active-clamp forward converters without external clamping
Optimized body diode	150ns t_rr, 1.3V V_SD @ 14A - Minimizes reverse recovery loss in synchronous rectifier and bidirectional DC-DC applications
Lead-free & RoHS-compliant	Meets JEDEC J-STD-020 reflow profile - Supports Pb-free manufacturing with peak solder temperature up to 300°C (10s)

Applications

Telecom 48V DC-DC Converters

Active-Clamp Forward Converters

Use Scenario: Primary-side switch in 48V-input, 12V-output telecom brick operating at 250kHz with >92% efficiency.

IC Role / Device Role / Timing Role: High-side main switch handling 23A peak primary current; enables ZVS via C_oss-based resonant transition.

Use Value: 0.090Ω R_DS(on) and 210pF C_oss,eff reduce combined conduction + switching loss by 18% vs. legacy 150V MOSFETs.

Use Scenario: Clamp switch in 300W active-clamp forward converter for server PSU with 150V bus.

IC Role / Device Role / Timing Role: Synchronized clamp switch absorbing transformer leakage energy; operates with precise dead-time control.

Use Value: 260mJ E_AS rating eliminates need for external RCD clamp network, reducing BOM count and board area.

High-Frequency Industrial SMPS

Isolated Bidirectional DC-DC

Use Scenario: Main switch in 100–300kHz industrial AC-DC PFC + LLC combo stage with wide input range.

IC Role / Device Role / Timing Role: Fast-switching power switch requiring low Q_g and stable R_DS(on) over -40°C to +125°C ambient.

Use Value: R_DS(on) tempco of 0.18V/°C ensures predictable loss increase; 17A rating at T_C = 100°C supports derated thermal design.

Use Scenario: Isolation barrier switch in 400V↔48V bidirectional DC-DC for energy storage systems.

IC Role / Device Role / Timing Role: Synchronous rectifier and power flow controller using body diode conduction and controlled turn-on.

Use Value: 150ns t_rr and 1.3V V_SD minimize reverse recovery loss during direction reversal, improving round-trip efficiency by 1.2%.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-frequency power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRFS23N15DPBF	TO-220AB package; identical electrical specs but higher R_θJA (62°C/W vs. 40°C/W)	Better suited for lower-power (<100W), naturally cooled designs where PCB space is constrained	Select when mechanical mounting constraints prohibit TO-262 footprint or when heatsink integration is impractical
STP20NM15	150V, 20A, 0.095Ω R_DS(on); higher Q_g (45nC); no published C_oss,eff or avalanche data	Limited to hard-switched topologies without ZVS requirements; not recommended for active-clamp designs	Choose only for cost-sensitive, non-avalanche-critical 100–200kHz flyback or forward converters

Compared with IRFS23N15DPBF and STP20NM15, IRFB23N15DPBF delivers superior thermal performance (R_θJC = 1.1°C/W), verified C_oss,eff for ZVS design, and guaranteed avalanche energy - making it the preferred choice for high-reliability, high-frequency telecom and industrial SMPS.

Availability

IRFB23N15DPBF is available at Aetrix Electronics and suitable for telecom 48V DC-DC converters, active-clamp forward power supplies, and high-frequency industrial SMPS requiring stable component supply, long-lifecycle assurance, and full traceability.

Supply support for IRFB23N15DPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, automotive, and industrial control solutions, with deep expertise in silicon-based power devices and wide-bandgap technologies.

This device belongs to Infineon's HEXFET® Power MOSFET product line, engineered specifically for high-efficiency, high-frequency switched-mode power supplies where low gate charge, controlled output capacitance, and robust avalanche performance are mandatory.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The IRFB23N15DPBF supports 17A continuous drain current at T_C = 100°C with V_GS = 10V, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the TO-262 package and ensures safe operation within its 136W P_D rating at T_C = 25°C.

Does this MOSFET require a negative gate turn-off voltage?

No - the IRFB23N15DPBF has a gate threshold voltage range of 3.0–5.5V and is fully compatible with 0/+10V or 0/+12V gate drive. Negative turn-off voltage is not required or recommended; standard logic-level drivers (e.g., IR2110, UCC27531) suffice for optimal switching performance.

Can the body diode be used for synchronous rectification?

Yes - the integrated body diode is characterized for 14A continuous source current and exhibits 150–220ns reverse recovery time with 0.8–1.2µC Q_rr. It is suitable for synchronous rectification in forward and LLC converters below 300kHz, provided gate timing avoids shoot-through and accounts for t_rr-induced voltage spikes.

Is the TO-262 package thermally compatible with standard TO-220 heatsinks?

No - the IRFB23N15DPBF's TO-262 (I²PAK) package has different mounting hole spacing (4.06mm vs. TO-220's 4.7mm) and tab geometry. It requires heatsinks designed for JEDEC MO-215 outline. Mechanical adaptation may compromise thermal performance and is not recommended without validation.

IRFB23N15DPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-220-3

Packaging:: Bulk

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 150 V

Current - Continuous Drain (Id) @ 25°C:: 23A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 90mOhm @ 14A, 10V

Vgs(th) (Max) @ Id:: 5.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 56 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 1200 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 3.8W (Ta), 136W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

IRFB23N15DPBF FAQ

1.How can I place an order for IRFB23N15DPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFB23N15DPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFB23N15DPBF reliable?

The price and inventory of IRFB23N15DPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFB23N15DPBF is usually 5 days.

3.What payment methods are accepted for IRFB23N15DPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFB23N15DPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFB23N15DPBF?

IRFB23N15DPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFB23N15DPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFB23N15DPBF?

For technical support, including IRFB23N15DPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFB23N15DPBF requirements.

6.How does Aetrix verify that IRFB23N15DPBF is sourced from the original manufacturer or authorized distributors?

All IRFB23N15DPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFB23N15DPBF meets industry standards.

7.What is the process for return or replacement of IRFB23N15DPBF?

All IRFB23N15DPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFB23N15DPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFB23N15DPBF part is unused and in its original packaging.

Return procedure for IRFB23N15DPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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