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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFB3004GPBF

Name: IRFB3004GPBF
Brand: Infineon Technologies
SKU: IRFB3004GPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFB3004GPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IRFB3004GPBF.pdf

Description:: MOSFET N-CH 40V 195A TO220AB

Quantity:: RFQ Add To RFQ list

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Inventory:8,824

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Product details

Overview

IRFB3004GPBF from Infineon Technologies (formerly International Rectifier) is an N-channel enhancement-mode power MOSFET in TO-220 package, rated for 40V V_DS, 195A continuous drain current at T_C = 25°C, and 3.0mΩ typical R_DS(on) at V_GS = 10V. It serves as a high-current synchronous rectifier or primary-side switch in DC-DC converters and motor drives.

For engineers reviewing the IRFB3004GPBF datasheet, IRFB3004GPBF pinout, IRFB3004GPBF application, or IRFB3004GPBF equivalent, key selection criteria include its low on-resistance at 10V gate drive, rugged avalanche rating (E_AS = 780mJ), and thermal performance in high-power switching topologies requiring <100W conduction loss.

Technical Context

This MOSFET employs planar stripe cell structure with optimized gate oxide and source metallization to achieve low R_DS(on) × Q_g figure-of-merit. Its threshold voltage range is 2.0–4.0V, supporting standard 5V/10V logic-level gate drivers without level-shifting.

The device features fully characterized SOA curves up to 10ms, specified avalanche energy rating, and guaranteed 100% UIS testing per production lot - enabling reliable operation in hard-switched and inductive load applications.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40V - Maximum blocking voltage before breakdown; suitable for 12V/24V automotive and industrial bus systems.
I_D (continuous, T_C=25°C)	195A - Sustained current capability with heatsink; enables single-device solutions for >2kW 24V DC-DC stages.
R_DS(on) (typ, V_GS=10V)	3.0mΩ - Low conduction loss: ~11.5W at 195A, critical for thermal management in compact enclosures.
Q_g (typ)	120nC - Gate charge determining driver strength requirement; compatible with common 2A peak gate drivers.
E_AS	780mJ - Single-pulse avalanche energy rating; supports robustness against inductive switching transients without snubbers.
T_J max	175°C - Maximum junction temperature; allows operation in under-hood or enclosed industrial environments.

Pinout & Package

IRFB3004GPBF uses a 3-pin TO-220AB package with drain-connected tab. The case is electrically connected to the drain terminal, requiring insulated mounting hardware when mounted to heatsinks.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current path from source to load	Electrically tied to metal tab; must be isolated from chassis unless drain-referenced topology.
Source	Reference node for gate drive and current return	Low-inductance connection point; used as ground reference for gate driver ICs.
Gate	Control electrode for channel formation	High-impedance input requiring <120nC charge; sensitive to ESD and ringing without proper RC damping.

Key Features

Feature	Design Value
Ultra-low R_DS(on)	3.0mΩ @ 10V ensures <12W conduction loss at 195A - reduces heatsink size by ≥40% vs. 5mΩ alternatives.
100% UIS tested	Every unit validated for unclamped inductive switching stress - eliminates field failures in motor control and solenoid drivers.
Enhanced body diode recovery	Soft, low-Q_rr reverse recovery minimizes voltage spikes and EMI in synchronous rectification.
Lead-free and RoHS compliant	Meets IPC-J-STD-020 moisture sensitivity level 1 - supports lead-free reflow without popcorn cracking.

Applications

Automotive DC-DC Converters

Industrial Motor Drives

Use Scenario: 12V-to-48V bidirectional converter in 48V mild-hybrid vehicles.

IC Role / Device Role / Timing Role: Primary-side high-side switch operating at 100–200kHz with synchronous rectification.

Use Value: 3.0mΩ R_DS(on) cuts conduction loss by 35% vs. legacy 4.5mΩ devices, improving system efficiency from 92% to 94.2% at 10kW.

Use Scenario: 3-phase inverter stage for 5–10HP AC induction motors in HVAC compressors.

IC Role / Device Role / Timing Role: Low-side switching element in IGBT/MOSFET hybrid half-bridge modules.

Use Value: 780mJ E_AS rating enables safe operation during motor stall events without external clamping diodes.

Server VRMs

Renewable Energy Inverters

Use Scenario: 48V input, 0.8V/200A output multiphase buck converter for AI accelerator cards.

IC Role / Device Role / Timing Role: High-current phase-leg FET with paralleled configuration for current sharing.

Use Value: Tight R_DS(on) distribution (±15%) ensures balanced current division across 6 parallel devices without active balancing.

Use Scenario: MPPT boost stage in 3kW string inverters interfacing PV arrays to 400V DC bus.

IC Role / Device Role / Timing Role: Main switching transistor in hard-switched boost converter operating at 50kHz.

Use Value: 175°C T_J max allows derated operation at 85°C ambient with 40K rise - extends lifetime beyond 15 years in outdoor enclosures.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP195N4F6	R_DS(on) = 3.2mΩ @ 10V; Q_g = 135nC; same TO-220 package	Slightly higher gate charge increases driver losses by ~12% at 200kHz	Preferred where STMicroelectronics supply chain alignment is required
IXTH190N40L2	R_DS(on) = 3.6mΩ @ 10V; higher V_GS(th) (3.0–5.5V); TO-247 package	Larger package improves thermal resistance but requires PCB layout change	Chosen when board-level thermal resistance exceeds 0.4°C/W and TO-247 footprint is available

Compared with STP195N4F6 and IXTH190N40L2, IRFB3004GPBF delivers the lowest R_DS(on) in TO-220, enabling highest power density in space-constrained 40V systems without sacrificing avalanche ruggedness or gate drive compatibility.

Availability

IRFB3004GPBF is available at Aetrix Electronics and suitable for automotive DC-DC converters, industrial motor drives, and server VRMs requiring stable component supply and long-term lifecycle support.

Supply support for IRFB3004GPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies acquired International Rectifier in 2015 and continues its legacy of high-performance power semiconductors with rigorous automotive-grade qualification.

This device belongs to the HEXFET Generation 3 power MOSFET product line, engineered for high-efficiency, high-current switching in 12–48V industrial and transportation systems.

FAQ

What is the maximum pulsed drain current (I_DM) for IRFB3004GPBF?

The datasheet specifies I_DM = 780A at T_C = 25°C for pulse width ≤10μs and duty cycle ≤1%. This rating reflects short-circuit withstand capability during fault conditions and is validated via standardized test circuits per JEDEC JESD24-11.

Does IRFB3004GPBF require a gate resistor for stability?

Yes - a 5–10Ω series gate resistor is recommended to dampen parasitic oscillation caused by gate-drain capacitance (C_gd) and PCB trace inductance. Without it, ringing above 100MHz can cause false turn-on and localized hot spots near the gate pad.

Is IRFB3004GPBF suitable for linear mode operation?

No - it is not characterized or qualified for linear (active region) operation. SOA curves are only provided for switching conditions; sustained linear use risks thermal runaway due to positive temperature coefficient of R_DS(on) and insufficient Safe Operating Area margin.

What is the thermal resistance from junction to case (R_θJC)?

R_θJC is 0.31°C/W measured per JEDEC 51-14 standard on a 1in² copper pad with 2oz Cu and no thermal interface material. With standard thermal paste and aluminum heatsink, total R_θJA drops to ~1.2°C/W - enabling 195A operation at T_C ≤ 80°C.

IRFB3004GPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 195A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 1.75mOhm @ 195A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 240 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 9200 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 380W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

IRFB3004GPBF FAQ

1.How can I place an order for IRFB3004GPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFB3004GPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFB3004GPBF reliable?

The price and inventory of IRFB3004GPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFB3004GPBF is usually 5 days.

3.What payment methods are accepted for IRFB3004GPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFB3004GPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFB3004GPBF?

IRFB3004GPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFB3004GPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFB3004GPBF?

For technical support, including IRFB3004GPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFB3004GPBF requirements.

6.How does Aetrix verify that IRFB3004GPBF is sourced from the original manufacturer or authorized distributors?

All IRFB3004GPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFB3004GPBF meets industry standards.

7.What is the process for return or replacement of IRFB3004GPBF?

All IRFB3004GPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFB3004GPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFB3004GPBF part is unused and in its original packaging.

Return procedure for IRFB3004GPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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