Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFB3004PBF

Name: IRFB3004PBF
Brand: Infineon Technologies
SKU: IRFB3004PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: IRFB3004PBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IRFB3004PBF.pdf

Description:: MOSFET N-CH 40V 195A TO220AB

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:471

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

IRFB3004PBF from Infineon Technologies (formerly International Rectifier) is a 40 V, 340 A (silicon-limited), 1.4 mΩ typ. N-channel HEXFET Power MOSFET in TO-220AB package, optimized for high-current synchronous rectification and hard-switched DC-DC conversion in server VRMs and telecom power supplies.

For engineers reviewing the IRFB3004PBF datasheet, IRFB3004PBF pinout, IRFB3004PBF application, or IRFB3004PBF equivalent, key selection criteria include its 1.4 mΩ R_DS(on) at V_GS = 10 V, 160 nC total gate charge, 2020 pF C_oss, 195 A body diode continuous current rating, and avalanche energy rating of 380 mJ (single-pulse).

Technical Context

This MOSFET employs planar silicon-gate technology with enhanced body diode dV/dt and dI/dt capability, enabling robust operation in high-frequency, high-di/dt synchronous buck stages. Its low Q_gd/Q_g ratio (68/160 nC) supports fast switching with reduced Miller-induced shoot-through risk.

The device features fully characterized SOA curves up to 100 µs pulse width, thermally limited E_AS of 380 mJ, and validated unclamped inductive switching performance at I_AS = 195 A, confirming ruggedness in overcurrent fault conditions without external snubbers.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	40 V - Maximum blocking voltage compatible with 12 V and 48 V input bus architectures.
R_DS(on) typ.	1.4 mΩ @ V_GS = 10 V, T_J = 25°C - Enables <1.5 W conduction loss at 195 A, critical for >95% efficiency in high-current VRMs.
I_D (silicon-limited)	340 A @ T_C = 25°C - Sets theoretical current ceiling before thermal runaway; actual usable current limited by bond wire (195 A) and PCB thermal design.
Q_g	160 nC max - Determines gate driver power requirement and switching speed trade-off in 300–1000 kHz SMPS designs.
C_oss	2020 pF - Directly impacts turn-off energy loss (E_off ∝ V_DS² × C_oss) and resonant behavior in ZVS circuits.
E_AS	380 mJ (single-pulse) - Quantifies safe unclamped inductive energy absorption during short-circuit events without junction failure.
V_SD	1.3 V max @ I_S = 195 A - Low forward drop reduces reverse conduction loss in synchronous rectifier mode.

Pinout & Package

IRFB3004PBF uses a TO-220AB package with isolated tab (drain-connected), standard three-terminal layout, and lead-free plating compliant with RoHS Directive 2011/65/EU.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current path output / heat sink interface	Electrically connected to metal tab; requires insulating washer when mounted to grounded heatsink.
Source	Power return reference / body diode cathode	Low-inductance connection point for source loop; ties to power ground plane in high-di/dt layouts.
Gate	Control terminal for channel modulation	High-impedance input requiring <2.7 Ω series resistance to damp ringing; sensitive to ESD (±20 V max).

Key Features

Feature	Design Value
Enhanced body diode dV/dt capability	Validated >930 A/µs di/dt with V_DD ≤ 40 V - enables reliable commutation in synchronous rectifiers without external diode.
Thermally limited avalanche rating	380 mJ single-pulse E_AS at T_J = 25°C - eliminates need for external clamping in overcurrent protection schemes.
Low C_oss effective capacitance	2440 pF (energy-related) - reduces turn-off loss and improves light-load efficiency in hard-switched topologies.
Lead-free and RoHS-compliant construction	Meets JEDEC J-STD-020D reflow profile - supports automated assembly without lead contamination concerns.
Characterized SOA for pulsed operation	Rated up to 100 µs at 340 A, 40 V - provides verified safe operating area for transient overload handling.

Applications

Server Voltage Regulator Modules

Telecom 48 V DC-DC Converters

Use Scenario: High-current (≥200 A), multiphase buck converters supplying CPU/GPU core voltage in data center servers.

IC Role / Device Role / Timing Role: Synchronous rectifier switch in low-side position, operating at 300–600 kHz with precise gate timing control.

Use Value: 1.4 mΩ R_DS(on) minimizes conduction loss under 195 A continuous load, directly improving VRM efficiency by ≥0.8% at full load.

Use Scenario: Isolated forward or half-bridge secondary-side synchronous rectification in 48 V telecom rectifiers.

IC Role / Device Role / Timing Role: Primary-side high-side switch in non-isolated 48 V-to-12 V intermediate bus converter.

Use Value: 340 A silicon-limited current capacity supports peak loads up to 250 A with margin, reducing parallel device count.

Uninterruptible Power Supplies

Industrial Motor Drives

Use Scenario: Bidirectional DC link switching in double-conversion UPS inverters with battery backup.

IC Role / Device Role / Timing Role: Inverter leg switch handling 400 V DC bus with 195 A continuous output current.

Use Value: 380 mJ avalanche energy rating ensures fault tolerance during grid transients without desaturation protection circuitry.

Use Scenario: High-power BLDC motor phase-leg switching in HVAC compressors and industrial pumps.

IC Role / Device Role / Timing Role: Low-side switch in 3-phase inverter bridge, commutating 150–200 A motor currents at 8–20 kHz PWM.

Use Value: Enhanced body diode dI/dt capability (930 A/µs) prevents snap-off failure during freewheeling in inductive motor loads.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N4F7AG	R_DS(on) = 0.75 mΩ (lower), Q_g = 195 nC (higher), TO-247-3L package	Requires larger footprint and higher gate drive power; better for ultra-low-loss but lower-frequency (<200 kHz) designs	Select when lowest possible conduction loss dominates over switching loss and board space is unconstrained.
IXFH300N04S4	R_DS(on) = 1.25 mΩ, C_oss = 2300 pF, D2Pak package, higher thermal resistance (R_θJA = 40 °C/W)	Higher switching loss due to larger C_oss; better suited for PCB-mount thermal management vs. heatsink mounting	Prefer when using FR-4 PCB copper pour for heat spreading instead of external heatsink attachment.

Compared with STL220N4F7AG and IXFH300N04S4, IRFB3004PBF offers the optimal balance of ultra-low R_DS(on), moderate gate charge, and TO-220AB mechanical compatibility-making it ideal for cost-sensitive, high-volume 300–600 kHz VRM and telecom power designs where thermal interface reliability is prioritized.

Availability

IRFB3004PBF is available at Aetrix Electronics and suitable for server VRMs, telecom DC-DC converters, and uninterruptible power supplies requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for IRFB3004PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive, and industrial control ICs and discrete devices.

This part belongs to Infineon's legacy HEXFET® Power MOSFET product line, engineered specifically for high-efficiency, high-reliability power conversion in enterprise computing, communications infrastructure, and industrial power systems.

FAQ

What is the maximum continuous drain current for IRFB3004PBF at 100°C case temperature?

The maximum continuous drain current at T_C = 100°C is 240 A, specified under V_GS = 10 V. This rating reflects thermal derating from the 340 A value at 25°C, constrained by junction-to-case thermal resistance (0.40 °C/W) and maximum allowable T_J = 175°C. It assumes proper heatsinking with greased interface.

Does IRFB3004PBF have a fully rated body diode for synchronous rectification?

Yes-the integrated body diode is fully characterized for synchronous rectifier use: continuous source current I_S = 340 A, pulsed I_SM = 1310 A, reverse recovery time t_rr = 27 ns (T_J = 25°C), and reverse recovery charge Q_rr = 18 nC. Its dI/dt capability of 930 A/µs is validated per datasheet Figure 21.

Can IRFB3004PBF be used in avalanche mode for overvoltage protection?

Yes-its single-pulse avalanche energy E_AS is rated at 380 mJ (T_J = 25°C), with repetitive avalanche energy E_AR = 240 mJ at 1% duty cycle. Safe operation requires limiting junction temperature to ≤175°C using the transient thermal impedance curve (Figure 13) and verifying circuit parameters per AN-1005.

What is the gate threshold voltage range, and how does it vary with temperature?

V_GS(th) ranges from 2.0 V to 4.0 V at T_J = 25°C, with a positive temperature coefficient of +0.037 V/°C. At 175°C, typical threshold rises to ~3.6 V, improving gate drive noise immunity but requiring sufficient gate drive headroom above 10 V for full enhancement.

IRFB3004PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Last Time Buy

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 195A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 1.75mOhm @ 195A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 240 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 9200 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 380W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

IRFB3004PBF FAQ

1.How can I place an order for IRFB3004PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFB3004PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFB3004PBF reliable?

The price and inventory of IRFB3004PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFB3004PBF is usually 5 days.

3.What payment methods are accepted for IRFB3004PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFB3004PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFB3004PBF?

IRFB3004PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFB3004PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFB3004PBF?

For technical support, including IRFB3004PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFB3004PBF requirements.

6.How does Aetrix verify that IRFB3004PBF is sourced from the original manufacturer or authorized distributors?

All IRFB3004PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFB3004PBF meets industry standards.

7.What is the process for return or replacement of IRFB3004PBF?

All IRFB3004PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFB3004PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFB3004PBF part is unused and in its original packaging.

Return procedure for IRFB3004PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-08-03 Electronic Component Obsolescence: EOL Risks, Replacement Options and Last-Time Buy Strategy

Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

2026-07-17 Raspberry Pi Alternatives: Chip-Level Comparison, Compatibility and Replacement Guide

Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…

2026-07-13 How to Test Dynamic Load Response in Low-Voltage High-Current Buck Converters

Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…

2026-07-08 Output Capacitor Selection for High-Current ASIC Vcore Rails

Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…

2026-07-07 High-Current ASIC Core Power Supply Design: 12-Phase Buck, PMBus and Dynamic Load Response

Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …

2026-07-06 Voltage Regulator: Types, Circuits, Testing and Selection Guide

Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.