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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFB3006GPBF

Name: IRFB3006GPBF
Brand: Infineon Technologies
SKU: IRFB3006GPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFB3006GPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IRFB3006GPBF.pdf

Description:: MOSFET N-CH 60V 195A TO220AB

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRFB3006GPBF from Infineon Technologies (formerly International Rectifier) is a 60V, 2.1 mΩ typ. N-channel enhancement-mode HEXFET Power MOSFET in TO-220AB package, optimized for high-current synchronous rectification and hard-switched SMPS topologies. It delivers 195A continuous drain current (package-limited), 270A silicon-limited current, and features enhanced body diode dV/dt and dI/dt capability for robust unclamped inductive switching in UPS and telecom power systems.

For engineers reviewing the IRFB3006GPBF datasheet, IRFB3006GPBF pinout, IRFB3006GPBF application, or IRFB3006GPBF equivalent, key selection criteria include its 2.1 mΩ R_DS(on), 200 nC total gate charge, 1480 pF C_oss(ER), 170A avalanche current rating, and SOA-validated operation up to 175°C junction temperature in high-density power stages.

Technical Context

This MOSFET employs planar V-groove silicon technology with optimized gate oxide thickness and trench-assisted field shaping to achieve improved dynamic dV/dt ruggedness and fully characterized avalanche SOA. Its low Q_gd/Q_g ratio (60/200 nC) supports fast, controllable turn-off in high-frequency ZVS/ZCS converters.

The integrated body diode exhibits 44 ns reverse recovery time (T_J = 25°C, I_F = 170A), 63 nC Q_rr, and 2.4 A I_RRM, enabling efficient synchronous rectification without external Schottky supplementation in 100–500 kHz DC-DC stages.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	60 V - Maximum blocking voltage before avalanche onset; enables use in 48V bus and 36V automotive auxiliary systems.
R_DS(on) typ.	2.1 mΩ at V_GS = 10 V, T_J = 25°C - Delivers ≤0.34 W conduction loss at 100A, critical for <1% efficiency loss in high-current output rails.
I_D (pkg)	195 A continuous @ T_C = 25°C - Determined by leadframe thermal and mechanical limits; defines maximum PCB copper and heatsink interface requirements.
Q_g	200 nC max - Governs gate driver power and rise/fall time; requires ≥2 A peak drive capability for <100 ns switching transitions.
E_AS	1080 mJ single-pulse - Enables reliable operation under unclamped inductive switching (e.g., motor drive freewheeling) without snubber networks.
C_oss(ER)	1480 pF - Energy-related output capacitance defining turn-on loss during hard-switched transitions; lower than comparable 60V MOSFETs by ~25%.
trr	44 ns @ T_J = 25°C - Fast body diode recovery minimizes cross-conduction loss in synchronous buck converters operating above 200 kHz.

Pinout & Package

IRFB3006GPBF uses the standard TO-220AB package with isolated tab (drain-connected), featuring three leads: Gate (G), Drain (D), and Source (S). The metal tab is electrically connected to the drain and must be insulated from heatsink unless system topology requires drain-to-chassis connection.

Pin/Terminal	Circuit Role	Design Meaning
G	Gate control terminal	Receives 10 V logic-level drive; internal R_G = 2.0 Ω limits ringing but requires low-impedance driver for <20 ns td(on).
D	Drain (connected to tab)	Main high-side or low-side power path; tab must be electrically isolated unless used as primary heat path with dielectric interface.
S	Source (power return)	Reference node for gate drive and current sensing; low-inductance Kelvin source routing recommended for accurate R_DS(on)-based current monitoring.

Key Features

Feature	Design Value
Enhanced avalanche ruggedness	1080 mJ E_AS validated per JEDEC JESD24-11; eliminates need for external clamping in flyback and LLC resonant converter secondary side.
Low C_oss(TR)/C_oss(ER) ratio	1920/1480 pF - Reduces turn-on energy loss while maintaining predictable timing behavior across V_DS swing in soft-switched topologies.
Body diode dI/dt capability	1360 A/µs @ T_J ≤ 175°C - Supports high di/dt freewheeling in 48V server VRMs without oscillation or latch-up.
Halogen-free & lead-free	Meets IPC-J-STD-609 Class 1 and RoHS Directive 2011/65/EU - Enables compliance in industrial and telecom equipment without tin whisker mitigation overhead.

Applications

Server VRM Output Stage

Telecom 48V DC-DC Converter

Use Scenario: High-current, multiphase buck converter delivering 100–300 A at 0.8–1.2 V to CPU/GPU cores in datacenter servers.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier MOSFET operating at 300–600 kHz with interleaved phase control.

Use Value: 2.1 mΩ R_DS(on) reduces conduction loss by 35% vs. legacy 3.5 mΩ devices, directly improving full-load efficiency by 0.8–1.2%.

Use Scenario: Isolated forward or active-clamp forward converter in 48V telecom rectifier modules supplying +12 V/–48 V outputs.

IC Role / Device Role / Timing Role: Primary-side switch handling 10–20 A RMS current with 100 kHz switching frequency and 50% duty cycle.

Use Value: 1480 pF C_oss(ER) lowers turn-on loss by 22% compared to industry-standard 60V MOSFETs, reducing thermal stress on heatsink design.

Uninterruptible Power Supply (UPS)

Industrial Motor Drive Inverter

Use Scenario: Bidirectional DC-AC inverter stage in line-interactive UPS systems converting 36–72 V battery bank to 230 V AC output.

IC Role / Device Role / Timing Role: Half-bridge leg switch supporting 10–15 kHz PWM with unclamped inductive load during battery backup mode.

Use Value: 1080 mJ E_AS rating ensures single-pulse reliability during grid-fail transients without snubber circuits or derating.

Use Scenario: 3-phase inverter driving 0.5–2 kW PMSM/BLDC motors in CNC spindles and automated material handling systems.

IC Role / Device Role / Timing Role: Low-side switch in IGBT/MOSFET hybrid topology, handling 50–120 A peak current with 10 kHz PWM.

Use Value: 44 ns trr and 1360 A/µs dI/dt capability prevent shoot-through during commutation, eliminating need for external anti-parallel diodes.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current 60V power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N6F7	R_DS(on) = 1.8 mΩ typ., Q_g = 225 nC, TO-220FP package (non-isolated tab)	Lower R_DS(on) improves conduction loss but higher Q_g increases switching loss; non-isolated tab requires conductive mounting.	Select when thermal interface resistance is minimized and gate drive strength exceeds 2.5 A peak.
IXFH320N06T2	R_DS(on) = 2.3 mΩ typ., E_AS = 950 mJ, TO-247AC package with 0.25°C/W R_θJC	Higher R_DS(on) and lower avalanche energy; superior thermal performance enables higher ambient operation in sealed enclosures.	Select when junction temperature margin >25°C is required and board space allows TO-247 footprint.

Compared with STL220N6F7 and IXFH320N06T2, IRFB3006GPBF offers the best balance of low R_DS(on), moderate Q_g, and validated avalanche robustness in cost-sensitive TO-220AB form factor-ideal for volume production where thermal interface control and layout simplicity are prioritized.

Availability

IRFB3006GPBF is available at Aetrix Electronics and suitable for server VRM output stages, telecom 48V DC-DC converters, and uninterruptible power supply inverters requiring stable component supply and long-term industrial lifecycle support.

Supply support for IRFB3006GPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive microcontrollers, and industrial IoT solutions.

IRFB3006GPBF belongs to the HEXFET® Power MOSFET product line, engineered specifically for high-efficiency, high-reliability power conversion in industrial, telecom, and computing infrastructure applications.

FAQ

What is the maximum continuous drain current for IRFB3006GPBF at 100°C case temperature?

The maximum continuous drain current at T_C = 100°C is 190 A (silicon-limited) per the Absolute Maximum Ratings table. This value reflects thermal derating from the 270 A rating at 25°C, constrained by junction temperature limits and bond wire integrity-not package thermal resistance alone.

Does IRFB3006GPBF require a negative gate voltage for reliable turn-off in high-dV/dt environments?

No. IRFB3006GPBF has a gate threshold voltage range of 2.0–4.0 V and is fully specified for 0 V to 10 V gate drive. Its enhanced gate oxide and reduced Miller charge (Q_gd = 60 nC) provide noise immunity up to 2.5 V/ns dV/dt without requiring negative bias-verified in unclamped inductive test circuits per Figure 22a.

Can IRFB3006GPBF be used in parallel configurations without current-sharing resistors?

Yes-its positive R_DS(on) temperature coefficient (0.07 V/°C breakdown voltage drift, Fig. 10) and matched transfer characteristics (Fig. 3) enable inherent thermal current sharing. Parallel operation is validated in multi-phase VRMs using direct Kelvin source connections and matched gate trace lengths.

Is the TO-220AB package of IRFB3006GPBF compatible with surface-mount reflow assembly?

No. The TO-220AB package is explicitly not recommended for surface-mount applications per the datasheet note on page 8. It requires through-hole mounting with mechanical screw torque of 10 lb·in (1.1 N·m) and thermally conductive interface material for optimal R_θJC = 0.4°C/W performance.

IRFB3006GPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Not For New Designs

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 195A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 2.5mOhm @ 170A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 300 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 8970 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 375W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

IRFB3006GPBF FAQ

1.How can I place an order for IRFB3006GPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFB3006GPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFB3006GPBF reliable?

The price and inventory of IRFB3006GPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFB3006GPBF is usually 5 days.

3.What payment methods are accepted for IRFB3006GPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFB3006GPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFB3006GPBF?

IRFB3006GPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFB3006GPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFB3006GPBF?

For technical support, including IRFB3006GPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFB3006GPBF requirements.

6.How does Aetrix verify that IRFB3006GPBF is sourced from the original manufacturer or authorized distributors?

All IRFB3006GPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFB3006GPBF meets industry standards.

7.What is the process for return or replacement of IRFB3006GPBF?

All IRFB3006GPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFB3006GPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFB3006GPBF part is unused and in its original packaging.

Return procedure for IRFB3006GPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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