Infineon Technologies IRFB3077GPBF

Overview

IRFB3077GPBF from Infineon Technologies (formerly International Rectifier) is a 75V, 210A silicon-limited N-channel enhancement-mode HEXFET Power MOSFET in TO-220AB package, optimized for high-frequency hard-switched SMPS and synchronous rectification with R_DS(on) typ. 2.8 mΩ, Q_g 160 nC, and enhanced body diode dV/dt/dI/dt capability. It delivers low conduction loss and robust unclamped inductive switching performance up to 300 mJ single-pulse avalanche energy.

For engineers reviewing the IRFB3077GPBF datasheet, IRFB3077GPBF pinout, IRFB3077GPBF application, or IRFB3077GPBF equivalent, key selection criteria include its 75V V_DS, 2.8 mΩ R_DS(on), 160 nC total gate charge, 850A pulsed drain current, and validated avalanche ruggedness under hard-switching conditions.

Technical Context

This MOSFET employs planar silicon process with optimized cell pitch and trench-assisted gate structure to achieve best-in-class R_DS(on) × Q_g figure-of-merit for 75V devices. Its body diode exhibits trr = 42–63 ns and Q_rr = 59–89 nC at TJ = 25°C, enabling reliable operation in synchronous buck and LLC resonant converters.

The device features fully characterized SOA curves up to 100 µs pulse width, thermally limited EAS = 300 mJ (T_J start = 25°C), and specified dV/dt immunity of 2.5 V/ns - critical for noise-immune operation in high-speed power stages with fast edge rates.

Key Specifications

Pinout & Package

TO-220AB package with isolated tab (drain-connected), standard 3-lead through-hole configuration. Mounting torque: 1.1 N·m (10 lbf·in) for 6-32 or M3 screw.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current 75V power switching applications.

Compared with STP210N75F7 and IXFH70N75X3, IRFB3077GPBF uniquely balances ultra-low R_DS(on), industry-leading EAS, and TO-220AB form factor-making it optimal for space-constrained, high-ruggedness applications like telecom PSUs and industrial UPS where both efficiency and fault survival are critical.

Availability

IRFB3077GPBF is available at Aetrix Electronics and suitable for high-efficiency synchronous rectification, uninterruptible power supply inverters, and high-frequency hard-switched DC-DC converters requiring stable component supply and long-term industrial lifecycle support.

Supply support for IRFB3077GPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive, and industrial control ICs and discrete devices.

This device belongs to Infineon's HEXFET® Power MOSFET product line, engineered specifically for high-efficiency, high-reliability power conversion in industrial, telecom, and computing infrastructure where thermal robustness and avalanche survivability are mandatory.

FAQ

Is IRFB3077GPBF suitable for surface-mount assembly?

No. The TO-220AB package is explicitly not recommended for surface-mount applications per Infineon's datasheet note dated December 2008. It requires through-hole mounting with mechanical screw attachment to a heatsink for thermal and mechanical reliability. Reflow soldering or wave soldering of this part violates qualified process limits and risks die attach delamination.

What is the maximum allowable case temperature for continuous operation?

The maximum continuous case temperature is 100°C, beyond which the silicon-limited continuous drain current drops from 210 A to 120 A. At T_C = 100°C, power dissipation must be limited to ensure junction temperature remains ≤175°C, requiring R_θJA < 0.62 °C/W with forced airflow or R_θJC + R_θCS < 0.902 °C/W with greased interface.

Does IRFB3077GPBF have a specified gate resistor recommendation?

Yes. For unclamped inductive switching with I_AS = 120 A, the datasheet specifies R_G = 25 Ω to limit dI/dt and ensure safe avalanche operation. For hard-switched SMPS, typical design uses R_G = 2.1 Ω to achieve t_r = 87 ns and t_f = 95 ns, balancing switching loss and EMI.

How does the body diode performance compare to discrete Schottky diodes?

The integrated body diode has V_SD = 1.3 V max and Q_rr = 59–89 nC, which is higher forward drop but lower stored charge than 40 V Schottky diodes used in 48 V systems. Its key advantage is co-packaged integration-eliminating layout parasitics-and guaranteed dI/dt = 400 A/µs capability, enabling robust synchronous rectification without external diode placement compromises.