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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFB3077PBFXKMA1

Name: IRFB3077PBFXKMA1
Brand: Infineon Technologies
SKU: IRFB3077PBFXKMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFB3077PBFXKMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IRFB3077PBFXKMA1.pdf

Description:: TRENCH 40<-<100V

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRFB3077PBFXKMA1 from Infineon Technologies (formerly International Rectifier) is a 75V, 2.8 mΩ typ. N-channel enhancement-mode HEXFET Power MOSFET in TO-220AB package, optimized for high-current synchronous rectification and hard-switched SMPS. It delivers 210A silicon-limited continuous drain current at 25°C, features 160 nC total gate charge, and supports 42 ns reverse recovery time with 59 nC Qrr for fast body diode operation in high-frequency topologies.

For engineers reviewing the IRFB3077PBFXKMA1 datasheet, IRFB3077PBFXKMA1 pinout, IRFB3077PBFXKMA1 application, or IRFB3077PBFXKMA1 equivalent, key selection criteria include R_DS(on) stability over temperature, unclamped inductive switching ruggedness (E_AS = 300 mJ), SOA compliance up to 120A at 100°C case temperature, and body diode dI/dt capability of 400 A/μs under defined conditions.

Technical Context

This MOSFET employs planar vertical DMOS structure with optimized cell pitch and trench-assisted source metallization to achieve ultra-low on-resistance while maintaining robust avalanche performance. Its gate threshold voltage (2.0–4.0 V) enables reliable 10 V gate drive compatibility with standard PWM controllers, and its Crss of 350 pF ensures stable high-speed switching with minimal Miller-induced shoot-through risk.

The device integrates an intrinsic body diode with V_SD ≤ 1.3 V at 75 A and trr of 42–63 ns, enabling efficient freewheeling in synchronous buck converters. Thermal design is supported by R_θJC = 0.402 °C/W and validated SOA curves covering DC, pulsed, and avalanche operating regions up to T_J = 175°C.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	75 V - Maximum blocking voltage before avalanche; suitable for 48 V bus and 60 V transient clamp designs.
R_DS(on) typ.	2.8 mΩ - Enables <1.5 W conduction loss at 75 A, critical for >95% efficiency in high-current SMPS outputs.
I_D (Silicon Limited)	210 A @ T_C = 25°C - Defines maximum safe DC current before thermal runaway under ideal heatsinking.
Q_g	160 nC - Determines gate driver power requirement and switching speed; impacts turn-on delay (25 ns) and rise time (87 ns).
E_AS	300 mJ - Single-pulse avalanche energy rating; validates robustness during inductive turn-off transients without derating.
trr / Q_rr	42 ns / 59 nC - Quantifies body diode recovery performance; enables use in synchronous rectification up to ~500 kHz.
R_θJC	0.402 °C/W - Junction-to-case thermal resistance; allows direct mounting to heatsink with predictable ΔT for thermal margining.

Pinout & Package

IRFB3077PBFXKMA1 is housed in a TO-220AB package with isolated tab (drain-connected), standard lead pitch (2.54 mm), and screw-mount compatible outline. The package supports 10 lb·in (1.1 N·m) mounting torque and is rated for 200°C soldering (10 s, 1.6 mm from case).

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current path from source to load	Electrically connected to metal tab; requires insulating washer when mounted to grounded heatsink.
Source	Return path for load current; reference for gate drive	Low-inductance connection point for Kelvin source sensing or low-side current monitoring.
Gate	Control terminal for channel conduction	High-impedance input requiring <220 nC charge; sensitive to ESD and ringing-needs RC snubber or gate resistor ≥2.1 Ω.

Key Features

Feature	Design Value
Ultra-low R_DS(on)	2.8 mΩ typ. at V_GS = 10 V reduces conduction losses by >30% vs. legacy 3.8 mΩ TO-220 MOSFETs in 48 V output rails.
Enhanced avalanche ruggedness	300 mJ single-pulse E_AS validated per JEDEC JESD24-11; eliminates need for external clamping in UPS and motor drive H-bridges.
Fast, soft body diode	trr = 42 ns and Q_rr = 59 nC enable zero-voltage switching (ZVS) in LLC resonant converters without added Schottky.
Thermally robust SOA	Linear derating factor 1.25 W/°C above 25°C case temperature; supports 120 A continuous operation at T_C = 100°C.
Lead-free and RoHS compliant	"PbF" suffix confirms exemption-compliant termination; meets IPC-J-STD-020 moisture sensitivity level 1 (MSL-1).

Applications

Server VRM Output Stage

Industrial UPS Inverter

Use Scenario: High-density 48 V–12 V step-down conversion delivering >200 A to CPU/GPU cores with <15 mV ripple.

IC Role / Device Role / Timing Role: Synchronous rectifier switch replacing Schottky diodes; operates at 300–600 kHz with precise dead-time control.

Use Value: 2.8 mΩ R_DS(on) cuts conduction loss by 4.2 W vs. 4.5 mΩ alternative, directly improving VRM efficiency from 93.1% to 94.3% at full load.

Use Scenario: Bidirectional DC link switching in double-conversion UPS systems handling 3 kVA loads with 10 ms transfer time.

IC Role / Device Role / Timing Role: Low-side switch in IGBT-driven half-bridge inverter leg; conducts 150 A peak during battery backup mode.

Use Value: 300 mJ E_AS withstands unclamped inductive spikes during grid-fail transitions without desaturation or latch-up.

Telecom Rectifier Module

EV Onboard Charger PFC Stage

Use Scenario: +54 V telecom rectifier with active OR-ing and hot-swap protection across redundant 2.5 kW modules.

IC Role / Device Role / Timing Role: Main pass transistor in high-side OR-ing configuration; blocks reverse current during module insertion/removal.

Use Value: 75 V V_DSS provides 20% margin over 48 V nominal bus, while 1.3 V V_SD minimizes forward drop during parallel current sharing.

Use Scenario: Boost PFC switch in 6.6 kW OBC operating at 100 kHz with interleaved dual-phase topology.

IC Role / Device Role / Timing Role: High-current switching element handling 85 A RMS phase current; subjected to repetitive 600 V dV/dt stress.

Use Value: 400 A/μs dI/dt capability and 2.5 A IRRM ensure clean commutation during zero-crossing events without oscillation or false triggering.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP210N75F7	R_DS(on) = 2.4 mΩ typ., Q_g = 155 nC, V_DSS = 75 V, TO-220FP package (full-pack)	Lower R_DS(on) but higher C_iss (10,200 pF); less suited for >400 kHz operation due to slower dV/dt immunity.	Select when lowest conduction loss dominates and switching frequency ≤250 kHz; verify gate drive strength for higher C_iss.
IXTH120N075L2	R_DS(on) = 3.0 mΩ typ., Q_g = 140 nC, V_DSS = 75 V, TO-247AC package; enhanced dV/dt rating (10 V/ns)	Superior dynamic ruggedness but larger footprint and higher cost; requires different heatsink interface.	Select for mission-critical industrial inverters where dV/dt immunity >5 V/ns is mandatory and board space permits TO-247.

Compared with STP210N75F7 and IXTH120N075L2, IRFB3077PBFXKMA1 offers the best balance of ultra-low R_DS(on), moderate gate charge, and proven TO-220AB thermal performance-making it optimal for cost-sensitive, high-volume 48 V power systems where layout density and heatsink compatibility are constrained.

Availability

IRFB3077PBFXKMA1 is available at Aetrix Electronics and suitable for server VRMs, industrial UPS inverters, telecom rectifiers, and EV onboard charger PFC stages requiring stable component supply and long-term industrial lifecycle support.

Supply support for IRFB3077PBFXKMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

This part belongs to Infineon's legacy HEXFET Power MOSFET product line, designed specifically for high-efficiency, high-reliability power conversion in industrial, telecom, and computing infrastructure applications.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The IRFB3077PBFXKMA1 supports 120 A continuous drain current at T_C = 100°C, limited by wire bond capacity-not silicon-per datasheet Section "Absolute Maximum Ratings." This value assumes proper heatsinking and airflow; exceeding it risks bond lift or interconnect failure even if junction temperature remains within limits.

Does this MOSFET require a gate resistor for stability?

Yes-a minimum gate resistor of 2.1 Ω is recommended per datasheet Figure 23a test circuit to dampen ringing caused by L_GD and C_iss interaction. Without it, overshoot exceeding ±20 V can trigger parasitic turn-on or oscillation during fast dV/dt transitions, especially in hard-switched topologies.

Can the body diode be used for synchronous rectification without external Schottky?

Yes-the integrated body diode has trr = 42 ns and Q_rr = 59 nC at T_J = 25°C, enabling reliable synchronous rectification up to 500 kHz in buck converters. However, at T_J = 125°C, Q_rr rises to 86 nC, so dead-time must be increased to avoid shoot-through in high-temperature operation.

Is the TO-220AB package electrically isolated?

No-the metal tab is internally connected to the Drain terminal. Electrical isolation requires a mica or ceramic insulator plus shoulder washer when mounting to a grounded heatsink. Failure to isolate may cause short-circuit faults or violate safety standards like UL 62368-1.

IRFB3077PBFXKMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 75 V

Current - Continuous Drain (Id) @ 25°C:: 120A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 3.3mOhm @ 75A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 220 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 9400 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 370W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-3-904

IRFB3077PBFXKMA1 FAQ

1.How can I place an order for IRFB3077PBFXKMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFB3077PBFXKMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFB3077PBFXKMA1 reliable?

The price and inventory of IRFB3077PBFXKMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFB3077PBFXKMA1 is usually 5 days.

3.What payment methods are accepted for IRFB3077PBFXKMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFB3077PBFXKMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFB3077PBFXKMA1?

IRFB3077PBFXKMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFB3077PBFXKMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFB3077PBFXKMA1?

For technical support, including IRFB3077PBFXKMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFB3077PBFXKMA1 requirements.

6.How does Aetrix verify that IRFB3077PBFXKMA1 is sourced from the original manufacturer or authorized distributors?

All IRFB3077PBFXKMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFB3077PBFXKMA1 meets industry standards.

7.What is the process for return or replacement of IRFB3077PBFXKMA1?

All IRFB3077PBFXKMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IRFB3077PBFXKMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFB3077PBFXKMA1 part is unused and in its original packaging.

Return procedure for IRFB3077PBFXKMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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