Infineon Technologies IRFB3307ZGPBF

Overview

IRFB3307ZGPBF from Infineon Technologies (formerly International Rectifier) is a 75V, 120A N-channel enhancement-mode HEXFET® Power MOSFET in TO-220AB package, optimized for high-efficiency synchronous rectification and hard-switched SMPS. It features 4.6 mΩ typ. R_DS(on), 79 nC total gate charge, 420 pF C_oss, and enhanced body diode dV/dt and dI/dt capability for robust unclamped inductive switching in UPS and telecom power systems.

For engineers reviewing the IRFB3307ZGPBF datasheet, IRFB3307ZGPBF pinout, IRFB3307ZGPBF application, or IRFB3307ZGPBF equivalent, key selection criteria include avalanche energy rating (300 mJ), junction-to-case thermal resistance (0.65 °C/W), body diode reverse recovery time (33–50 ns), and SOA compliance under repetitive pulsed drain current up to 512 A.

Technical Context

This MOSFET employs planar silicon-gate technology with optimized cell pitch and trench-assisted drift region design to achieve low conduction loss while maintaining high dv/dt immunity (>1.5 V/ns) and robust single-pulse avalanche capability. Its body diode exhibits fast reverse recovery (Q_rr = 42–63 nC) and low forward voltage (V_SD ≤ 1.3 V), enabling efficient synchronous rectification without external Schottky replacement.

The device is characterized across temperature (–55°C to +175°C) with fully specified SOA curves, dynamic parameters at V_GS = 10 V, and thermal impedance profiles validated per JEDEC JESD51-14. Gate threshold voltage (2.0–4.0 V) and transconductance (320 S typ.) are tightly controlled to ensure predictable turn-on behavior in high-frequency gate-driven topologies.

Key Specifications

Pinout & Package

IRFB3307ZGPBF uses the industry-standard TO-220AB package with isolated tab (drain-connected), rated for 1.1 N·m mounting torque. The three-terminal configuration supports high-current PCB mounting with direct heatsink coupling via the metal tab.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current 75 V power switching applications.

Compared with STP120N75F7 and IXFH72N75X3, IRFB3307ZGPBF delivers balanced trade-offs: lowest Q_g/R_DS(on) ratio among 75 V TO-220 devices, best-in-class E_AS, and verified body diode dI/dt capability (1570 A/μs), making it optimal for mission-critical UPS and telecom power where reliability trumps marginal efficiency gains.

Availability

IRFB3307ZGPBF is available at Aetrix Electronics and suitable for high-efficiency synchronous rectification, uninterruptible power supply output stages, and high-speed power switching requiring stable component supply across industrial, telecom, and server OEM programs.

Supply support for IRFB3307ZGPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive microcontrollers, and industrial sensors, with global manufacturing and R&D centers across Europe, Asia, and the Americas.

This device belongs to Infineon's HEXFET® Power MOSFET product line, engineered specifically for high-efficiency, high-reliability power conversion in industrial SMPS, UPS, and telecom infrastructure where thermal stability and avalanche survivability are critical.

FAQ

Is IRFB3307ZGPBF suitable for surface-mount assembly?

No. The TO-220AB package is explicitly not recommended for surface-mount applications per Infineon's datasheet note. It requires through-hole mounting with mechanical screw attachment (6-32 or M3) and thermal interface material to a heatsink. Surface-mount alternatives like D²PAK or LFPAK packages must be selected for reflow-based production.

What is the maximum allowable gate-source voltage for reliable operation?

The absolute maximum V_GS is ±20 V, but reliable long-term operation requires limiting gate drive to ≤±15 V. Exceeding 15 V increases gate oxide stress and accelerates threshold voltage shift; the typical gate threshold voltage range is 2.0–4.0 V, and internal gate resistance is 0.70 Ω, supporting standard 1 A peak gate drivers.

How does the body diode performance compare to discrete Schottky rectifiers?

At 75 A and 25°C, the body diode forward voltage is ≤1.3 V - higher than a 45 V Schottky (0.55 V), but its 33 ns reverse recovery time and 42 nC Q_rr eliminate reverse recovery spikes that cause EMI and shoot-through in synchronous rectifiers. This makes it preferable to Schottky in high-di/dt, high-frequency applications despite higher V_F.

Can IRFB3307ZGPBF be paralleled for higher current capacity?

Yes, but only with strict layout symmetry: matched gate drive paths (≤50 mm trace length difference), Kelvin source connections, and shared heatsink with uniform thermal resistance. The positive R_DS(on) temperature coefficient (0.094 V/°C) provides inherent current sharing, but mismatched parasitic inductance can cause dynamic imbalance above 200 kHz.