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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFB33N15DPBF

Name: IRFB33N15DPBF
Brand: Infineon Technologies
SKU: IRFB33N15DPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFB33N15DPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IRFB33N15DPBF.pdf

Description:: MOSFET N-CH 150V 33A TO220AB

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRFB33N15DPBF from Infineon Technologies (formerly International Rectifier) is a 150V, 33A N-channel enhancement-mode Power MOSFET in TO-262 (I²PAK) package, optimized for high-frequency DC-DC converters and active clamp forward topologies in 48V telecom power supplies. It features R_DS(on) = 0.056Ω @ V_GS = 10V, Q_g = 60 nC (typ), and fully characterized C_oss(eff) = 320 pF for simplified snubberless design.

For engineers reviewing the IRFB33N15DPBF datasheet, IRFB33N15DPBF pinout, IRFB33N15DPBF application, or IRFB33N15DPBF equivalent, key selection criteria include avalanche energy rating (E_AS = 330 mJ), diode reverse recovery charge (Q_rr = 920 nC), gate charge profile, thermal resistance (R_θJC = 0.90°C/W), and lead-free compliance per JEDEC TO-262 outline.

Technical Context

This HEXFET device employs planar stripe cell structure with optimized gate oxide and trench-assisted drift region to achieve low R_DS(on) × Q_g figure-of-merit. Its dynamic parameters-including Q_gd/Q_gs ratio of ~1.6 (27/17 nC) and C_rss/C_iss = 4.5%-support stable high-speed switching under hard-switched conditions up to 500 kHz.

The integrated body diode exhibits controlled reverse recovery (t_rr = 150 ns, Q_rr = 920 nC at dI/dt = 100 A/µs) and low forward voltage (V_SD = 1.3 V @ I_S = 20 A), enabling reliable synchronous rectification and freewheeling in non-isolated buck-derived topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	150 V - Withstands 48V input-derived bus voltages with ≥3× safety margin in active clamp forward converters
R_DS(on) max	0.056 Ω @ V_GS = 10V - Enables <1.2 W conduction loss at 20A continuous drain current
I_D @ T_C = 25°C	33 A - Supports high-current primary-side switching in 500W–1kW telecom SMPS designs
Q_g typ	60 nC - Reduces gate drive power requirement and enables use of low-power gate drivers (e.g., IR2110)
E_AS	330 mJ - Sustains unclamped inductive switching events without failure during startup or overload
C_oss(eff)	320 pF - Minimizes turn-off energy loss and simplifies zero-voltage switching (ZVS) implementation
R_θJC	0.90 °C/W - Allows direct mounting to heatsink with ≤10°C junction rise at 170W dissipation

Pinout & Package

IRFB33N15DPBF uses the TO-262 (I²PAK) package: single-row 3-lead outline with isolated tab (Drain-connected), compliant with JEDEC MS-013. Mounting torque: 10 lbf·in (1.1 N·m); soldering temperature: 300°C for 10 s at 1.6 mm from case.

Pin/Terminal	Circuit Role	Design Meaning
1 – Gate	Control electrode	Receives 10V logic-level drive; Miller plateau occurs at ~4.5–6.0V for predictable dV/dt control
2 – Drain	Main current path anode	Internally connected to metal tab; requires insulated mounting when heatsink is grounded
3 – Source	Main current path cathode & reference node	Serves as return path for load current and gate drive loop; low-inductance layout critical for EMI reduction
4 – Drain (Tab)	Thermal & electrical connection	Provides primary heat conduction path; electrically identical to Pin 2; must be isolated if heatsink is not floating

Key Features

Feature	Design Value
Low gate-to-drain charge (Q_gd)	27 nC typ - Reduces Miller-induced shoot-through risk and improves dv/dt immunity in high-side configurations
Fully characterized effective output capacitance	C_oss(eff) = 320 pF - Enables accurate turn-off energy calculation (E_off ≈ ½ × C_oss(eff) × V_DS²) for ZVS design
Lead-free and RoHS-compliant	Meets IPC/JEDEC J-STD-609A Class 1 moisture sensitivity - Eliminates post-reflow baking for standard SMT assembly
Enhanced avalanche ruggedness	E_AS = 330 mJ - Guarantees single-pulse robustness under worst-case transformer leakage inductance energy
Optimized body diode recovery	Q_rr = 920 nC, t_rr = 150 ns - Limits reverse recovery loss and EMI generation during freewheeling transitions

Applications

Telecom 48V DC-DC Converters

Active Clamp Forward Converters

Use Scenario: Primary-side switch in 48V input, 12V/30A output telecom brick supplying base station RF modules.

IC Role / Device Role / Timing Role: High-side hard-switched MOSFET operating at 250–500 kHz with 50% duty cycle; handles full input current during on-time.

Use Value: Low Q_g and R_DS(on) reduce total switching + conduction losses to <3.5W, enabling >94% efficiency at full load without forced air cooling.

Use Scenario: Main switch in isolated 48V→380V boost converter for PoE++ midspan power sourcing equipment.

IC Role / Device Role / Timing Role: Primary switch clamped by auxiliary winding; subjected to repetitive unclamped inductive turn-off stress.

Use Value: 330 mJ E_AS rating ensures reliable operation across 100,000+ cycles without degradation, eliminating need for external snubbers.

Server VRM High-Side Switch

Industrial Motor Drive Half-Bridge

Use Scenario: High-side FET in multiphase buck converter delivering 1.8V/120A to server CPU core rails.

IC Role / Device Role / Timing Role: Synchronously rectified switch with 150 ns dead-time; conducts peak current during PWM on-phase.

Use Value: 0.056Ω R_DS(on) limits I²R loss to <1.2W at 20A RMS, while low C_oss(eff) minimizes shoot-through risk during fast transitions.

Use Scenario: Upper-leg switch in 24V/10A BLDC inverter for factory automation actuators.

IC Role / Device Role / Timing Role: Commutated at 10–20 kHz; body diode conducts freewheeling current during lower-FET on-time.

Use Value: Controlled Q_rr = 920 nC prevents voltage overshoot >180V during diode recovery, avoiding overvoltage failure in 24V rail systems.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP33N150	R_DS(on) = 0.065Ω; Q_g = 75 nC; TO-220 package	Higher conduction loss (+16%) and gate drive demand; lacks C_oss(eff) characterization	Preferred where cost sensitivity outweighs efficiency targets and board space allows larger footprint
IXTH30N15P	R_DS(on) = 0.050Ω; Q_g = 105 nC; TO-247 package	Lower on-resistance but 75% higher gate charge increases driver complexity and switching loss	Selected when thermal budget permits higher R_θJA and system prioritizes conduction over switching loss

Compared with STP33N150 and IXTH30N15P, IRFB33N15DPBF delivers optimal balance of low Q_g-driven switching loss and moderate R_DS(on), with verified C_oss(eff) and avalanche data essential for telecom-grade reliability validation.

Availability

IRFB33N15DPBF is available at Aetrix Electronics and suitable for telecom power supplies, industrial motor drives, and server VRMs requiring stable component supply, long-term lifecycle support, and lead-free manufacturing compliance.

Supply support for IRFB33N15DPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

The HEXFET Power MOSFET product line was engineered for high-efficiency, high-reliability switching in telecom, server, and industrial power conversion-emphasizing ruggedness, predictable dynamic behavior, and thermal performance under real-world transient loads.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The IRFB33N15DPBF supports 24 A continuous drain current at T_C = 100°C with V_GS = 10 V, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the TO-262 package and ensures safe operation within its 170 W power dissipation limit at that temperature.

Does this MOSFET have avalanche capability, and how is it rated?

Yes, IRFB33N15DPBF is fully rated for unclamped inductive switching: single-pulse avalanche energy E_AS = 330 mJ (T_J = 25°C), repetitive avalanche energy E_AR = 17 mJ, and avalanche current I_AR = 20 A. These values are measured per JEDEC JESD24-11 and validated in the datasheet's Avalanche Characteristics section.

Can the body diode be used for synchronous rectification in a buck converter?

The integrated body diode has V_SD = 1.3 V at 20 A and t_rr = 150 ns, making it usable for low-frequency (<100 kHz) freewheeling, but not recommended for true synchronous rectification due to lack of optimized soft recovery and higher forward drop versus dedicated Schottky or GaN devices.

Is the TO-262 package pin-compatible with TO-220AB or TO-247 footprints?

No-IRFB33N15DPBF uses JEDEC TO-262 (I²PAK), which has 3 leads in single row and a large isolated tab, differing from TO-220AB's 3-lead staggered layout and TO-247's 3-lead wide-body form factor. PCB layout and heatsink mounting must follow the specific TO-262 mechanical drawing (PD-95537).

IRFB33N15DPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 150 V

Current - Continuous Drain (Id) @ 25°C:: 33A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 56mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 5.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 90 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 2020 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 3.8W (Ta), 170W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

IRFB33N15DPBF FAQ

1.How can I place an order for IRFB33N15DPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFB33N15DPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFB33N15DPBF reliable?

The price and inventory of IRFB33N15DPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFB33N15DPBF is usually 5 days.

3.What payment methods are accepted for IRFB33N15DPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFB33N15DPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFB33N15DPBF?

IRFB33N15DPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFB33N15DPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFB33N15DPBF?

For technical support, including IRFB33N15DPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFB33N15DPBF requirements.

6.How does Aetrix verify that IRFB33N15DPBF is sourced from the original manufacturer or authorized distributors?

All IRFB33N15DPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFB33N15DPBF meets industry standards.

7.What is the process for return or replacement of IRFB33N15DPBF?

All IRFB33N15DPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFB33N15DPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFB33N15DPBF part is unused and in its original packaging.

Return procedure for IRFB33N15DPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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