Infineon Technologies IRFB3407ZPBF

Overview

IRFB3407ZPBF from Infineon Technologies is a 75V, 120A N-channel enhancement-mode HEXFET® Power MOSFET in TO-220AB package, optimized for high-frequency hard-switching DC-DC converters and battery management systems. It delivers 5.0 mΩ typical R_DS(on), 79 nC total gate charge, and 488 A pulsed drain current, with enhanced body diode dV/dt and dI/dt capability for robust synchronous rectification.

For engineers reviewing the IRFB3407ZPBF datasheet, IRFB3407ZPBF pinout, IRFB3407ZPBF application, or IRFB3407ZPBF equivalent, key selection criteria include avalanche ruggedness (E_AS = 300 mJ), SOA-limited continuous current at elevated case temperatures, and C_oss eff. (TR) = 410 pF for snubberless ZVS design validation.

Technical Context

This MOSFET employs planar V-groove silicon technology with fully characterized avalanche SOA and thermally limited single-pulse energy rating. Its gate threshold voltage (2.0–4.0 V) and low internal gate resistance (0.70 Ω) support direct drive from standard 3.3 V/5 V logic controllers without external buffers.

The device integrates an intrinsic fast-recovery body diode (t_rr = 33–50 ns, Q_rr = 42–63 nC) with controlled reverse recovery behavior under high di/dt (≤1570 A/μs), enabling reliable operation in synchronous buck, LLC resonant, and motor phase-leg topologies.

Key Specifications

Pinout & Package

TO-220AB package with isolated metal tab (drain-connected), standard 3-lead through-hole mounting. Tab must be electrically insulated unless used as heatsink return path for drain.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current power switching applications.

Compared with STP75NF75 and IXTH120N075L2, IRFB3407ZPBF offers optimal balance of low R_DS(on), moderate gate charge, and proven avalanche reliability in TO-220AB-making it preferred for space-constrained, high-reliability 48 V power stages where thermal interface resistance is tightly controlled.

Availability

IRFB3407ZPBF is available at Aetrix Electronics and suitable for battery management, server VRMs, and motor drive inverters requiring stable component supply across multi-year production cycles.

Supply support for IRFB3407ZPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive MCUs, and industrial sensors, with global manufacturing and qualification to AEC-Q101 and IEC 60747 standards.

This device belongs to the HEXFET® Power MOSFET product line, engineered for high-efficiency, high-reliability switching in telecom, computing, and industrial power conversion-emphasizing ruggedness, low conduction loss, and predictable dynamic behavior.

FAQ

Is IRFB3407ZPBF suitable for synchronous rectification in LLC resonant converters?

Yes. Its 33 ns body diode reverse recovery time, 42 nC Q_rr, and 410 pF C_oss eff. (TR) enable clean zero-voltage switching at 300–500 kHz. The low R_DS(on) minimizes conduction loss during synchronous on-time, and its dI/dt rating of 1570 A/μs prevents false turn-on during high di/dt transitions.

What is the maximum continuous drain current at 100°C case temperature?

At T_C = 100°C, the continuous drain current is 86 A (silicon-limited) per the Absolute Maximum Ratings table. This reflects thermal derating from the 122 A rating at 25°C, governed by junction-to-case thermal resistance (0.65 °C/W) and maximum junction temperature (175°C).

Does IRFB3407ZPBF require a gate resistor for safe operation?

A gate resistor is required to control dv/dt and suppress oscillation. With 0.70 Ω internal gate resistance and 79 nC total gate charge, a 5–10 Ω external resistor ensures <50 ns rise/fall times while damping resonance with PCB trace inductance. Values below 3 Ω risk overshoot and shoot-through in high-speed layouts.

Can the TO-220AB package be mounted directly to a heatsink without insulation?

No. The TO-220AB metal tab is internally connected to the drain terminal. Direct mounting to a grounded heatsink creates a short circuit unless the heatsink is electrically isolated or referenced to the drain potential. Use mica washers or silicone thermal pads rated for ≥75 V isolation and ≤0.50 °C/W interface resistance.