Infineon Technologies IRFB3607GPBF

Overview

IRFB3607GPBF from Infineon Technologies (formerly International Rectifier) is a 75V, 80A N-channel enhancement-mode HEXFET Power MOSFET in TO-220AB package, optimized for high-efficiency synchronous rectification and hard-switched SMPS topologies. It features 7.34 mΩ typical R_DS(on), 56 nC total gate charge, 280 pF output capacitance, and enhanced avalanche ruggedness (310 mJ single-pulse E_AS), enabling robust operation in UPS and high-frequency DC-DC converters.

For engineers reviewing the IRFB3607GPBF datasheet, IRFB3607GPBF pinout, IRFB3607GPBF application, or IRFB3607GPBF equivalent, key selection criteria include its 75V V_(BR)DSS, 80A continuous drain current at T_C = 25°C, 1.045°C/W junction-to-case thermal resistance, body diode reverse recovery time (33–50 ns), and SOA-limited switching performance in hard-switched circuits.

Technical Context

This MOSFET employs planar silicon process with optimized cell pitch and trench-assisted drift region to achieve low R_DS(on) × Q_g figure-of-merit (≈410 Ω·nC). Its gate threshold voltage (2.0–4.0 V) enables compatibility with standard 10 V gate drivers, while the 0.55 Ω internal gate resistance damps oscillation during fast switching.

The device integrates an intrinsic body diode with 1.3 V forward voltage (V_SD) and controlled reverse recovery (Q_rr = 32–48 nC), supporting synchronous rectification without external Schottky replacement in 100–500 kHz SMPS designs. Avalanche capability is thermally limited and validated per AN-1005 up to I_AS = 46 A.

Key Specifications

Pinout & Package

IRFB3607GPBF uses the industry-standard TO-220AB package with isolated tab (drain-connected), featuring three leads: Gate (G), Drain (D), and Source (S). The metal tab is electrically connected to the Drain terminal and must be insulated from heatsink unless circuit topology permits common-drain mounting.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current 75 V power switching applications.

Compared with STP80NF70 and IXTH80N75L2, IRFB3607GPBF offers the best balance of low gate charge (56 nC), moderate R_DS(on) (7.34 mΩ), and TO-220AB mechanical compatibility-making it optimal for cost-sensitive, medium-frequency SMPS where footprint and drive simplicity are prioritized over extreme efficiency.

Availability

IRFB3607GPBF is available at Aetrix Electronics and suitable for high-efficiency synchronous rectification in SMPS, uninterruptible power supply (UPS) inverters, and high-speed power switching circuits requiring stable component supply across industrial, telecom, and computing end markets.

Supply support for IRFB3607GPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive, and industrial control ICs and discrete devices.

IRFB3607GPBF belongs to Infineon's legacy HEXFET® Power MOSFET product line, engineered specifically for high-current, medium-voltage switching in industrial power supplies, UPS systems, and motor controls where ruggedness and thermal reliability are critical.

FAQ

Is IRFB3607GPBF suitable for synchronous rectification in 400 kHz LLC resonant converters?

Yes. With 7.34 mΩ R_DS(on), 56 nC Q_g, and 610 pF C_oss eff. (TR), IRFB3607GPBF delivers low conduction and switching losses at 400 kHz. Its body diode t_rr of 33–50 ns ensures clean commutation during dead-time, and the 1.045°C/W R_θJC supports thermal stability under 80 A peak loads with proper heatsinking.

What is the maximum allowable case temperature for continuous 80 A operation?

The absolute maximum continuous drain current is rated at 80 A only when T_C = 25°C. At T_C = 100°C, the derated ID is 56 A per datasheet Fig. 9. For sustained 80 A operation, case temperature must remain ≤65°C to maintain junction temperature below 175°C, assuming R_θJC = 1.045°C/W and ambient heatsink conditions.

Does IRFB3607GPBF have a fully characterized avalanche SOA?

Yes. The datasheet provides validated single-pulse avalanche energy (E_AS) curves up to 310 mJ at I_AS = 46 A and pulse widths ≤400 µs (Fig. 12). Repetitive avalanche is permitted as long as T_J ≤175°C and duty cycle ≤2%, per AN-1005 guidelines. No external snubber is required for unclamped inductive switching within these limits.

Can IRFB3607GPBF be used with 5 V logic-level gate drivers?

No. Its gate threshold voltage range is 2.0–4.0 V, but full enhancement requires V_GS ≥10 V to achieve rated R_DS(on) of 7.34 mΩ. At 5 V, R_DS(on) rises sharply (>25 mΩ), increasing conduction loss by >3×. A 10–12 V gate driver with ≥1 A peak current is mandatory for specified performance.