Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFB4110GPBF

Name: IRFB4110GPBF
Brand: Infineon Technologies
SKU: IRFB4110GPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: IRFB4110GPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IRFB4110GPBF.pdf

Description:: MOSFET N-CH 100V 120A TO220AB

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:6,972

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

IRFB4110GPBF from Infineon Technologies (formerly International Rectifier) is a 100V, 120A (package-limited), 3.7mΩ N-channel enhancement-mode HEXFET Power MOSFET in TO-220AB package, optimized for high-frequency hard-switched and synchronous rectification circuits requiring robust avalanche capability and fast body diode recovery. It delivers 300mJ single-pulse avalanche energy and supports 630A/µs di/dt in body diode conduction.

For engineers reviewing the IRFB4110GPBF datasheet, IRFB4110GPBF pinout, IRFB4110GPBF application, or IRFB4110GPBF equivalent, key selection criteria include its 4.5mΩ max R_DS(on), 150nC typical gate charge, 670pF C_oss, 50–75ns reverse recovery time at 75A, and validated operation up to 175°C junction temperature in SMPS and UPS designs.

Technical Context

This MOSFET employs planar silicon-gate technology with optimized cell pitch and trench-assisted edge termination to achieve enhanced dv/dt ruggedness (tested per JEDEC JESD22-A114) and thermally stable avalanche SOA. Its body diode is engineered for soft recovery with low Q_rr (94–140nC) and controlled I_RRM (≤3.5A), minimizing switching losses in synchronous buck stages.

The device features fully characterized dynamic parameters including C_iss = 9620pF, C_oss = 670pF, and C_rss = 250pF at V_DS = 50V, enabling accurate loss modeling in >200kHz converters. Thermal resistance R_θJC is 0.402°C/W, supporting high-power density layouts with direct heatsink mounting.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	100V - Maximum blocking voltage before avalanche onset; enables use in 48V bus and 85V AC line-derived topologies.
R_DS(on) typ./max	3.7mΩ / 4.5mΩ @ V_GS = 10V - Directly determines conduction loss in high-current paths (e.g., 120A yields ≤6.5W at 25°C).
I_D (package)	120A @ T_C = 25°C - Package-limited continuous current; constrained by leadframe thermal and mechanical limits, not silicon.
Q_g / Q_gd	150nC / 43nC - Governs gate drive power and Miller-induced switching delay; critical for selecting gate driver IC output current capability.
t_rr / Q_rr	50–75ns / 94–140nC - Quantifies body diode reverse recovery behavior; lower values reduce shoot-through risk and EMI in synchronous rectifiers.
E_AS	300mJ - Single-pulse unclamped inductive avalanche energy rating; validates robustness against transient overvoltage during turn-off.
R_θJC	0.402°C/W - Junction-to-case thermal resistance; defines minimum heatsink requirement for 962W dissipation at ΔT = 387°C (theoretical max).

Pinout & Package

IRFB4110GPBF uses the standard TO-220AB package with isolated tab (drain-connected), 3-pin through-hole configuration. Mounting torque: 10 lbf·in (1.1 N·m). Not recommended for surface-mount assembly.

Pin/Terminal	Circuit Role	Design Meaning
Gate (G)	Control electrode	Receives 10V logic-level signal to modulate channel conductivity; threshold voltage 2.0–4.0V ensures compatibility with 5V/12V drivers.
Drain (D)	High-side power terminal	Connected to heatsink tab; carries full load current and withstands 100V blocking; requires isolation washer if heatsink is grounded.
Source (S)	Power return and reference node	Serves as common return path for drain current and gate drive reference; low-inductance layout essential for high-di/dt stability.

Key Features

Feature	Design Value
Enhanced avalanche ruggedness	300mJ single-pulse E_AS with validated thermal failure model-enables reliable operation in unclamped inductive switching without external snubbers.
Optimized body diode dV/dt & dI/dt capability	Rated for 630A/µs di/dt and high dv/dt immunity-reduces risk of parasitic turn-on and oscillation during hard commutation.
Lead-free and halogen-free construction	Meets RoHS Directive 2011/65/EU and JEDEC JS709B-ensures compliance for industrial and telecom equipment with strict environmental requirements.
Fully characterized SOA and capacitance	Published Safe Operating Area curves up to 10ms and frequency-dependent C_iss/C_oss/C_rss data-supports precise thermal and switching loss simulation in PSIM/Saber.

Applications

Server VRM Synchronous Rectifier

Industrial UPS Inverter Stage

Use Scenario: High-efficiency 48V-to-12V DC-DC conversion in server power supplies using multiphase synchronous buck topology.

IC Role / Device Role / Timing Role: Low-side power switch conducting up to 120A peak; body diode conducts during dead-time; switching frequency 300–600kHz.

Use Value: 3.7mΩ R_DS(on) reduces conduction loss by ~22% vs. 4.8mΩ alternatives at 100A, improving full-load efficiency by 0.8%.

Use Scenario: Bidirectional DC link switching in three-phase online UPS inverters delivering 5–10kVA output.

IC Role / Device Role / Timing Role: High-current half-bridge switch handling 100A RMS; subjected to repetitive unclamped inductive stress during battery backup mode.

Use Value: 300mJ E_AS and 175°C TJ rating allow sustained operation under overload transients without derating or forced cooling.

Telecom Rectifier Module

EV Charging Station PFC Stage

Use Scenario: +54V telecom rectifier module converting -48V DC input to regulated +54V output for distributed power architecture.

IC Role / Device Role / Timing Role: Synchronous rectifier in forward converter secondary side; operates at 200kHz with 75A average current.

Use Value: 50ns t_rr and 94nC Q_rr minimize reverse recovery loss, reducing secondary-side losses by 1.2W per device vs. standard MOSFETs.

Use Scenario: Boost PFC stage in 11kW AC/DC on-board charger for electric vehicles operating at 65kHz and 230VAC input.

IC Role / Device Role / Timing Role: Fast-switching boost switch handling 45A peak current; subjected to high dv/dt (>50V/ns) during turn-off.

Use Value: Enhanced dv/dt ruggedness prevents false triggering and latch-up, eliminating need for gate resistors >10Ω in compact PCB layouts.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current 100V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP120N10F7	R_DS(on) = 3.5mΩ typ., Q_g = 135nC, C_oss = 720pF, TO-220FP package (lower profile, non-isolated tab)	Limited to 100A continuous due to smaller package; lacks published E_AS curve above 200mJ	Prefer when board height is constrained and avalanche stress is minimal; verify heatsink isolation separately.
IXFH120N10L2	R_DS(on) = 3.8mΩ typ., Q_g = 165nC, E_AS = 280mJ, TO-247AC package (higher thermal performance, larger footprint)	Superior R_θJC = 0.33°C/W supports >135A continuous; higher gate charge increases driver loss	Choose for >10k-hour reliability in 24/7 industrial UPS; accept larger PCB area and higher gate drive cost.

Compared with STP120N10F7 and IXFH120N10L2, IRFB4110GPBF offers the best balance of package compatibility (TO-220AB), proven 300mJ avalanche margin, and moderate gate charge-making it optimal for cost-sensitive, high-volume SMPS where thermal headroom and ruggedness are prioritized over absolute lowest R_DS(on).

Availability

IRFB4110GPBF is available at Aetrix Electronics and suitable for high-efficiency synchronous rectification in SMPS, uninterruptible power supply inverters, and high-frequency hard-switched motor drives requiring stable component supply across multi-year production cycles.

Supply support for IRFB4110GPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global R&D and manufacturing infrastructure.

IRFB4110GPBF belongs to the HEXFET® Power MOSFET product line, designed specifically for high-current, high-reliability power conversion systems demanding robust avalanche performance and fast switching in industrial and telecom infrastructure.

FAQ

What is the maximum continuous drain current for IRFB4110GPBF at 100°C case temperature?

At T_C = 100°C, the continuous drain current is 180A (silicon-limited) but is constrained to 120A by package wirebond and leadframe thermal limits. The datasheet specifies ID = 120A @ T_C = 25°C as the practical continuous rating; derating follows the linear derating factor of 1.2W/°C beyond 25°C case temperature.

Does IRFB4110GPBF have a fully rated avalanche capability, and how is it validated?

Yes-IRFB4110GPBF is fully characterized for unclamped inductive avalanche with E_AS = 300mJ (single-pulse, T_J = 25°C) and EAR = 130mJ (repetitive, 1% duty cycle). Validation follows JEDEC JESD22-A114 test conditions using L = 0.033mH, R_G = 25Ω, I_AS = 108A, and V_GS = 10V, with failure defined as junction temperature exceeding 175°C.

Can IRFB4110GPBF be used in surface-mount designs?

No-IRFB4110GPBF uses the TO-220AB package with a metal tab intended for through-hole mounting and direct heatsink attachment using a 6-32 or M3 screw (torque: 10 lbf·in). The datasheet explicitly states "TO-220AB packages are not recommended for Surface Mount Application" due to mechanical instability and thermal interface challenges in reflow processes.

How does the body diode performance compare to standard MOSFETs in synchronous rectification?

IRFB4110GPBF's body diode exhibits t_rr = 50–75ns and Q_rr = 94–140nC at I_F = 75A, significantly lower than legacy MOSFETs (e.g., >120ns, >200nC). This results in reduced reverse recovery loss and lower EMI, enabling higher switching frequencies without compromising efficiency or requiring external Schottky catch diodes.

IRFB4110GPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 120A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 4.5mOhm @ 75A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 210 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 9620 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 370W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

IRFB4110GPBF FAQ

1.How can I place an order for IRFB4110GPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFB4110GPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFB4110GPBF reliable?

The price and inventory of IRFB4110GPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFB4110GPBF is usually 5 days.

3.What payment methods are accepted for IRFB4110GPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFB4110GPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFB4110GPBF?

IRFB4110GPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFB4110GPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFB4110GPBF?

For technical support, including IRFB4110GPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFB4110GPBF requirements.

6.How does Aetrix verify that IRFB4110GPBF is sourced from the original manufacturer or authorized distributors?

All IRFB4110GPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFB4110GPBF meets industry standards.

7.What is the process for return or replacement of IRFB4110GPBF?

All IRFB4110GPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFB4110GPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFB4110GPBF part is unused and in its original packaging.

Return procedure for IRFB4110GPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

2026-07-17 Raspberry Pi Alternatives: Chip-Level Comparison, Compatibility and Replacement Guide

Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…

2026-07-13 How to Test Dynamic Load Response in Low-Voltage High-Current Buck Converters

Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…

2026-07-08 Output Capacitor Selection for High-Current ASIC Vcore Rails

Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…

2026-07-07 High-Current ASIC Core Power Supply Design: 12-Phase Buck, PMBus and Dynamic Load Response

Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …

2026-07-06 Voltage Regulator: Types, Circuits, Testing and Selection Guide

Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.

2026-06-30 Amplifiers Explained: Types, Circuits, Gain, Classes and Applications

Amplifier guide covering voltage, current and power amplification, gain, feedback, amplifier classes, audio and RF applications, op-amp circuits, transimpedance amplifiers, datasheet selection and trou…