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Infineon Technologies IRFB4115GPBF
- Part No.:
- IRFB4115GPBF
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3
- Datasheet:
-
IRFB4115GPBF.pdf
- Description:
- MOSFET N-CH 150V 104A TO220AB
- Quantity:
- Payment:
- Shipping:
Inventory:7,817
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Product details
Overview
IRFB4115GPBF from Infineon Technologies (formerly International Rectifier) is a 150V, 104A N-channel enhancement-mode HEXFET Power MOSFET in TO-220AB package, optimized for high-efficiency synchronous rectification and hard-switched SMPS topologies. It delivers 9.3mΩ typical RDS(on), 77nC total gate charge, and enhanced body diode dV/dt/dI/dt ruggedness for UPS and telecom power systems.
For engineers reviewing the IRFB4115GPBF datasheet, IRFB4115GPBF pinout, IRFB4115GPBF application, or IRFB4115GPBF equivalent, key selection criteria include its 150V VDSS, 104A continuous drain rating at 25°C, 0.40°C/W junction-to-case thermal resistance, avalanche energy rating of 220mJ, and SOA compliance up to 10ms at 50V.
Technical Context
This MOSFET employs planar silicon process with optimized cell layout to achieve low RDS(on) while maintaining robust unclamped inductive switching capability. Its body diode exhibits 86ns reverse recovery time and 300nC Qrr at 25°C, enabling reliable operation in synchronous buck converters.
The device features fully characterized dynamic parameters including 5270pF Ciss, 490pF Coss, and 105pF Crss, with gate threshold voltage tightly specified between 3.0–5.0V and transconductance of 97S typical - supporting stable PWM control across industrial temperature range.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 150V - Maximum blocking voltage before avalanche onset; enables use in 48V–100V bus applications. |
| RDS(on) typ. | 9.3mΩ @ VGS = 10V, TJ = 25°C - Low conduction loss supports >95% efficiency in 100A-class power stages. |
| ID cont. | 104A @ TC = 25°C - High current handling with TO-220AB package and 0.40°C/W RθJC. |
| Qg | 77nC max - Enables fast switching with moderate gate drive strength; reduces turn-on losses in high-frequency designs. |
| EAS | 220mJ single-pulse - Confirmed avalanche energy rating allows safe operation under inductive fault conditions without snubbers. |
| trr | 86ns @ TJ = 25°C, IF = 62A - Fast body diode recovery minimizes cross-conduction loss in synchronous rectifiers. |
| RθJC | 0.40°C/W - Enables direct heatsink mounting with predictable thermal performance in conduction-limited designs. |
Pinout & Package
IRFB4115GPBF uses the standard TO-220AB package with three leads: Gate (G), Drain (D), and Source (S). The metal tab is electrically connected to the Drain terminal and must be isolated from heatsink unless circuit topology permits common-drain configuration.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G | Gate | Control input requiring ≥10V to fully enhance; internal gate resistance is 2.3Ω - affects gate drive loop stability. |
| D | Drain | Main high-side power terminal; connected to metal tab - requires electrical isolation when mounted to heatsink. |
| S | Source | Power return path and reference for gate drive; body diode anode is internally tied to Source. |
Key Features
| Feature | Design Value |
|---|---|
| Enhanced avalanche ruggedness | 220mJ single-pulse EAS with validated thermal failure model - eliminates need for external clamping in many UPS and motor drive circuits. |
| Optimized body diode dV/dt immunity | Rated for 2.5V/ns peak diode recovery dv/dt - prevents false turn-on during hard commutation in bridge configurations. |
| Low Coss effective capacitance | 460pF Coss(ER) - reduces switching loss during zero-voltage transition and improves light-load efficiency in resonant topologies. |
| Halogen-free & lead-free | Meets RoHS Directive 2011/65/EU and JEDEC J-STD-020 moisture sensitivity level 1 - suitable for reflow assembly without baking. |
| Characterized SOA curves | Full Safe Operating Area defined up to 10ms pulse width - enables reliable design margining for overload and short-circuit protection. |
Applications
| Telecom DC-DC Converters | Uninterruptible Power Supplies (UPS) |
|---|---|
Use Scenario: Primary-side switch in 48V–54V input half-bridge DC-DC modules delivering 1.2kW output. IC Role / Device Role / Timing Role: High-side power switch operating at 200kHz with synchronous rectification on secondary side. Use Value: 9.3mΩ RDS(on) and 77nC Qg enable <1.2W conduction + switching loss at full load, reducing thermal footprint by 35% vs. legacy 12mΩ parts. |
Use Scenario: Inverter stage in line-interactive UPS converting 360V DC bus to 230V AC output. IC Role / Device Role / Timing Role: Low-side switch in H-bridge topology with bidirectional current flow during battery backup mode. Use Value: 420A pulsed source current rating and 86ns trr support clean zero-crossing switching and reduce THD below 3% at full rated load. |
| Industrial Motor Drives | High-Frequency SMPS |
Use Scenario: Phase-leg switch in 3kW servo drive feeding PMSM motors with field-oriented control. IC Role / Device Role / Timing Role: Hard-switched IGBT replacement in 10–20kHz PWM inverters with active freewheeling. Use Value: 150V VDSS and 104A ID allow direct substitution in 100V rail designs while improving efficiency by 1.8% over comparable IGBTs. |
Use Scenario: Main switch in 500kHz LLC resonant converter for server VRMs. IC Role / Device Role / Timing Role: Zero-voltage switched primary FET with body diode conducting reverse current during dead-time. Use Value: 460pF Coss(ER) and 300nC Qrr minimize capacitive turn-on loss and reduce dead-time penalty by 40ns compared to standard 100V MOSFETs. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-current 150V power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP110N15M5 | 150V, 110A, 8.5mΩ RDS(on), but only 180mJ EAS and no published Coss(ER) data. | Lacks validated avalanche SOA curves beyond 100µs - unsuitable for unclamped inductive loads above 50A. | Prefer for cost-sensitive, non-avalanche-critical 150V SMPS where lower RDS(on) outweighs ruggedness needs. |
| IXTH110N15L2 | 150V, 110A, 9.0mΩ RDS(on), 250mJ EAS, but TO-247 package increases board area and thermal interface complexity. | Higher gate charge (95nC) demands stronger gate driver; superior avalanche rating suits industrial motor drives. | Choose when system-level reliability under fault conditions justifies larger footprint and higher drive power. |
Compared with STP110N15M5 and IXTH110N15L2, IRFB4115GPBF offers optimal balance of TO-220AB manufacturability, 220mJ avalanche margin, and 77nC gate charge - making it preferred for space-constrained, high-reliability 150V power stages where thermal management and fault tolerance are co-prioritized.
Availability
IRFB4115GPBF is available at Aetrix Electronics and suitable for telecom DC-DC converters, uninterruptible power supplies (UPS), and industrial motor drives requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.
Supply support for IRFB4115GPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive, and industrial control ICs and discrete devices.
This part belongs to Infineon's legacy HEXFET® Power MOSFET product line, originally developed by International Rectifier and designed for high-efficiency, high-ruggedness power conversion in industrial and telecom infrastructure.
FAQ
Is IRFB4115GPBF suitable for surface-mount assembly?
No - the TO-220AB package is explicitly not recommended for surface-mount applications per the datasheet. It requires through-hole mounting with mechanical screw attachment (6-32 or M3) and thermal interface material to a heatsink. SMT alternatives like D2PAK or LFPAK packages would be required for reflow assembly.
What is the maximum allowable gate-to-source voltage for reliable operation?
The absolute maximum VGS is ±20V, but the device is characterized for stable operation at 10V - the typical gate drive level for full enhancement. Exceeding 15V risks accelerated gate oxide degradation; gate drive circuits should include clamping to limit transient overshoot to ≤12V.
How does the body diode performance compare to discrete Schottky rectifiers?
The integrated body diode has VSD = 1.3V and trr = 86ns - higher forward drop and slower recovery than Schottky diodes, but sufficient for synchronous rectification in 100–500kHz SMPS where gate timing controls conduction. It eliminates external diode count but requires careful dead-time optimization to avoid shoot-through.
Can IRFB4115GPBF replace older IRFB4115PBF variants?
Yes - IRFB4115GPBF is the lead-free, halogen-free qualified successor to IRFB4115PBF, with identical electrical specifications, pinout, and thermal performance. The "G" suffix denotes green compliance; no design changes or derating are required for drop-in replacement in existing layouts.
IRFB4115GPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- TO-220-3
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 150 V
- Current - Continuous Drain (Id) @ 25°C:
- 104A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 11mOhm @ 62A, 10V
- Vgs(th) (Max) @ Id:
- 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 120 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 5270 pF @ 50 V
- FET Feature:
- -
- Power Dissipation (Max):
- 380W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220AB
IRFB4115GPBF FAQ
1.How can I place an order for IRFB4115GPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRFB4115GPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRFB4115GPBF reliable?
The price and inventory of IRFB4115GPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFB4115GPBF is usually 5 days.
3.What payment methods are accepted for IRFB4115GPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFB4115GPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRFB4115GPBF?
IRFB4115GPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRFB4115GPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRFB4115GPBF?
For technical support, including IRFB4115GPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFB4115GPBF requirements.
6.How does Aetrix verify that IRFB4115GPBF is sourced from the original manufacturer or authorized distributors?
All IRFB4115GPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFB4115GPBF meets industry standards.
7.What is the process for return or replacement of IRFB4115GPBF?
All IRFB4115GPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFB4115GPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRFB4115GPBF part is unused and in its original packaging.
Return procedure for IRFB4115GPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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