Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFB41N15DPBF

Name: IRFB41N15DPBF
Brand: Infineon Technologies
SKU: IRFB41N15DPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: IRFB41N15DPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IRFB41N15DPBF.pdf

Description:: MOSFET N-CH 150V 41A TO220AB

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:4,988

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

IRFB41N15DPBF from Infineon Technologies is a 150 V, 41 A, N-channel enhancement-mode HEXFET® Power MOSFET in TO-220AB package, optimized for high-frequency DC-DC converters and motor control. It features R_DS(on) = 0.045 Ω @ V_GS = 10 V, Q_g = 72 nC (typ), and avalanche-rated E_AS = 470 mJ, enabling efficient hard-switching in industrial power supplies.

For engineers reviewing the IRFB41N15DPBF datasheet, IRFB41N15DPBF pinout, IRFB41N15DPBF application, or IRFB41N15DPBF equivalent, key selection criteria include its 150 V V_DSS, low gate charge for reduced switching loss, thermal resistance R_θJC = 0.75 °C/W, body diode recovery performance (t_rr = 170 ns), and TO-220AB mechanical compatibility with heatsink mounting.

Technical Context

This MOSFET employs planar silicon process technology with fully characterized output capacitance (C_oss = 510 pF @ V_DS = 25 V) and effective C_oss = 250 pF for soft-switching design. Its gate threshold voltage (V_GS(th) = 3.0–5.5 V) ensures robust turn-on margin under varying drive conditions.

The device supports unclamped inductive switching with I_AR = 25 A and E_AS = 470 mJ (single-pulse), and exhibits dv/dt immunity up to 2.7 V/ns during diode recovery - critical for reliability in flyback and resonant topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	150 V - Withstands 150 V drain-source blocking voltage before avalanche onset, suitable for 120 VAC-derived bus rails.
R_DS(on) max	0.045 Ω @ V_GS = 10 V, I_D = 25 A - Enables <1.1 W conduction loss at 25 A, reducing heatsink requirements.
I_D continuous @ T_C = 25°C	41 A - Rated for full-load operation with case temperature maintained at 25°C using heatsink.
Q_g typ	72 nC - Low total gate charge minimizes driver power and enables >500 kHz switching in SMPS designs.
t_rr	170 ns (typ) - Fast body diode recovery reduces cross-conduction loss in synchronous rectification and half-bridge configurations.
R_θJC	0.75 °C/W - Junction-to-case thermal resistance allows direct heatsink mounting for high-power density layouts.
E_AS	470 mJ - Single-pulse avalanche energy rating supports robustness against inductive load transients without external snubbers.

Pinout & Package

IRFB41N15DPBF uses the standard TO-220AB package with isolated tab (drain-connected), 3-pin through-hole configuration. Mounting torque: 10 lbf·in (1.1 N·m); soldering temperature: 300°C for 10 s at 1.6 mm from case.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Lead)	Gate (G)	High-impedance control terminal; requires <72 nC charge for full enhancement; sensitive to ESD.
Pin 2 (Tab)	Drain (D)	Electrically connected to metal tab; must be insulated from heatsink unless system ground reference permits.
Pin 3 (Lead)	Source (S)	Power return path and gate reference; carries full load current and body diode reverse recovery current.

Key Features

Feature	Design Value
Low Q_gd/Q_g ratio	35/72 nC - Reduces Miller-induced switching delay and improves controllability in high-dV/dt environments.
Fully characterized C_oss eff.	250 pF - Enables accurate calculation of turn-off energy and zero-voltage switching (ZVS) boundary conditions.
Avalanche-rated	E_AS = 470 mJ - Eliminates need for external clamping circuits in inductive switching applications like solenoid drivers.
Lead-free construction	RoHS-compliant, Pb-free plating - Meets IPC-J-STD-020 moisture sensitivity level (MSL) 1 for reflow compatibility.
Body diode t_rr spec	170–260 ns - Guaranteed fast recovery supports synchronous rectifier replacement in LLC and phase-shifted full-bridge topologies.

Applications

Motor Drive Inverter Stage

Industrial DC-DC Converter Primary Switch

Use Scenario: 3-phase BLDC motor inverter stage operating at 20–40 kHz PWM frequency with 48 V bus.

IC Role / Device Role / Timing Role: High-side/low-side switching element handling 41 A peak phase current; synchronized with gate driver for dead-time control.

Use Value: Low R_DS(on) and fast t_rr minimize conduction + commutation losses, improving inverter efficiency by ≥1.2% at full load.

Use Scenario: 1 kW isolated forward converter in telecom power supply with 380 VDC input bus.

IC Role / Device Role / Timing Role: Primary-side main switch operating in hard-switched mode at 250 kHz with 150 V blocking requirement.

Use Value: 150 V V_DSS provides 20% margin over 380 VDC × √2/π ≈ 120 V reflected clamp voltage, ensuring safe operation under transient overvoltage.

Solenoid & Actuator Driver

UPS Inverter Output Stage

Use Scenario: 24 V industrial solenoid control module requiring 30 A pulsed current and inductive kick protection.

IC Role / Device Role / Timing Role: Unclamped inductive switch with integrated avalanche capability; driven by microcontroller GPIO via level-shifting buffer.

Use Value: 470 mJ E_AS rating absorbs energy from 30 A × 10 mH solenoid discharge without failure, eliminating discrete TVS requirement.

Use Scenario: Line-interactive UPS output H-bridge delivering 230 VAC sine wave to critical loads.

IC Role / Device Role / Timing Role: Low-side switch in full-bridge output stage; conducts 41 A RMS during overload conditions (125% for 10 min).

Use Value: R_θJC = 0.75 °C/W enables thermal management with passive heatsink only, reducing fan dependency and acoustic noise.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP40NF15	R_DS(on) = 0.042 Ω, Q_g = 85 nC, V_DSS = 150 V, TO-220	Higher gate charge increases driver loss; identical avalanche rating but lower SOA at high T_C	Prefer when lowest on-resistance is prioritized over switching speed.
IXTH40N15	R_DS(on) = 0.040 Ω, Q_g = 92 nC, V_DSS = 150 V, TO-247	Larger package offers better thermal performance (R_θJC = 0.45 °C/W) but requires PCB layout revision.	Choose for higher ambient temperature operation (>85°C case) where board space permits TO-247.

Compared with STP40NF15 and IXTH40N15, IRFB41N15DPBF delivers optimal balance of low Q_g (72 nC), proven SOA in TO-220AB, and production-ready lead-free qualification - making it preferred for cost-sensitive, high-volume 200–500 kHz SMPS designs.

Availability

IRFB41N15DPBF is available at Aetrix Electronics and suitable for industrial motor drives, telecom DC-DC converters, and uninterruptible power supplies requiring stable component supply and long-term manufacturing continuity.

Supply support for IRFB41N15DPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

This device belongs to the HEXFET® Power MOSFET product line, engineered specifically for high-efficiency, high-reliability switching in industrial power conversion systems where thermal robustness and avalanche tolerance are mandatory.

FAQ

Is IRFB41N15DPBF RoHS-compliant and lead-free?

Yes. The "PbF" suffix confirms lead-free termination per JEDEC J-STD-020, with matte tin plating and MSL Level 1 rating. It meets EU RoHS Directive 2011/65/EU and China RoHS II, and has been qualified for reflow profiles up to 260°C peak.

What is the maximum recommended gate resistor value for 250 kHz operation?

For 250 kHz hard-switching with 12 V gate drive, a 5.6 Ω series gate resistor limits peak current to ~2.1 A while achieving t_on/t_off < 100 ns. This value balances switching speed against ringing and EMI; values below 3.3 Ω increase risk of gate oscillation without proportional efficiency gain.

Can IRFB41N15DPBF replace IRF41N15DPBF in existing designs?

No - IRF41N15DPBF does not exist in Infineon's official part numbering system. IRFB41N15DPBF is the correct base number; variants like IRFSL41N15DPBF (TO-262) and IRFS41N15DPBF (D2-Pak) share identical electrical specs but differ in thermal and mechanical characteristics.

Does the body diode support synchronous rectification in continuous conduction mode?

Not recommended. While t_rr = 170 ns is fast for a standard MOSFET, its Q_rr = 1.3 µC and softness factor (t_a/t_b) are uncharacterized. For true synchronous rectification, use dedicated trench Schottky or GaN devices with controlled reverse recovery.

IRFB41N15DPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 150 V

Current - Continuous Drain (Id) @ 25°C:: 41A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 45mOhm @ 25A, 10V

Vgs(th) (Max) @ Id:: 5.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 110 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 2520 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 200W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

IRFB41N15DPBF FAQ

1.How can I place an order for IRFB41N15DPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFB41N15DPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFB41N15DPBF reliable?

The price and inventory of IRFB41N15DPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFB41N15DPBF is usually 5 days.

3.What payment methods are accepted for IRFB41N15DPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFB41N15DPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFB41N15DPBF?

IRFB41N15DPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFB41N15DPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFB41N15DPBF?

For technical support, including IRFB41N15DPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFB41N15DPBF requirements.

6.How does Aetrix verify that IRFB41N15DPBF is sourced from the original manufacturer or authorized distributors?

All IRFB41N15DPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFB41N15DPBF meets industry standards.

7.What is the process for return or replacement of IRFB41N15DPBF?

All IRFB41N15DPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFB41N15DPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFB41N15DPBF part is unused and in its original packaging.

Return procedure for IRFB41N15DPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

2026-07-17 Raspberry Pi Alternatives: Chip-Level Comparison, Compatibility and Replacement Guide

Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…

2026-07-13 How to Test Dynamic Load Response in Low-Voltage High-Current Buck Converters

Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…

2026-07-08 Output Capacitor Selection for High-Current ASIC Vcore Rails

Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…

2026-07-07 High-Current ASIC Core Power Supply Design: 12-Phase Buck, PMBus and Dynamic Load Response

Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …

2026-07-06 Voltage Regulator: Types, Circuits, Testing and Selection Guide

Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.

2026-06-30 Amplifiers Explained: Types, Circuits, Gain, Classes and Applications

Amplifier guide covering voltage, current and power amplification, gain, feedback, amplifier classes, audio and RF applications, op-amp circuits, transimpedance amplifiers, datasheet selection and trou…