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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFB4212PBF

Name: IRFB4212PBF
Brand: Infineon Technologies
SKU: IRFB4212PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFB4212PBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IRFB4212PBF.pdf

Description:: MOSFET N-CH 100V 18A TO220AB

Quantity:: RFQ Add To RFQ list

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Inventory:5,439

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Product details

Overview

IRFB4212PBF from Infineon Technologies (formerly International Rectifier) is a 100 V, 72.5 mΩ N-channel enhancement-mode Power MOSFET in TO-220AB package, optimized for Class-D audio amplifier half-bridge output stages. It delivers ≤150 W per channel into 4 Ω loads, features 175 °C max junction temperature, repetitive avalanche capability, and low Q_g (15 nC), Q_sw (8.3 nC), and Q_rr (69–100 nC) to minimize THD and EMI.

For engineers reviewing the IRFB4212PBF datasheet, IRFB4212PBF pinout, IRFB4212PBF application, or IRFB4212PBF equivalent, key selection criteria include R_DS(on) stability over temperature, body diode reverse recovery performance, gate charge profile for high-frequency switching, and thermal resistance (R_θJC = 2.5 °C/W) in high-power audio output stages.

Technical Context

This MOSFET employs HEXFET® process technology to achieve low on-resistance per die area while maintaining robust safe operating area (SOA) up to 100 V and 13 A DC at T_C = 25 °C. Its internal gate resistance (2.2 Ω) and optimized capacitance ratios (C_iss = 550 pF, C_rss = 35 pF) support stable high-speed switching with reduced Miller-induced shoot-through risk in bridge configurations.

The device integrates a fast, low-V_SD (≤1.3 V) body diode with t_rr = 41–62 ns and Q_rr = 69–100 nC, enabling efficient synchronous rectification and minimizing dead-time distortion in Class-D amplifiers. Repetitive avalanche rating (E_AR = 25 mJ at T_J = 25 °C) supports unclamped inductive turn-off resilience in real-world speaker load transients.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - Withstands rail voltages up to ±45 V in bridged Class-D topologies with margin for voltage spikes.
R_DS(on) @ 10 V	72.5 mΩ typ. - Enables <150 W/channel into 4 Ω with <1.5 W conduction loss at 13 A RMS.
Q_g	15 nC typ. - Reduces gate drive power and enables clean 300–500 kHz PWM switching without excessive driver heating.
Q_rr	69–100 nC - Low reverse recovery charge minimizes crossover distortion and EMI during body-diode commutation.
T_J max	175 °C - Supports sustained operation in thermally constrained enclosures with derated power above 100 °C case temperature.
R_θJC	2.5 °C/W - Allows direct heatsink mounting with predictable thermal rise; 30 W dissipation raises junction only ~75 °C above case.
t_r/t_f	28 ns / 3.9 ns - Fast edge rates reduce switching transition time, lowering overlap losses in complementary half-bridge pairs.

Pinout & Package

IRFB4212PBF is housed in a through-hole TO-220AB package with isolated tab (drain-connected), standard lead pitch (2.54 mm), and mechanical mounting hole for heatsink attachment. Thermal path is optimized from die to case via copper leadframe and solderable tab.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current return path to high-side rail	Electrically connected to metal tab; must be insulated from heatsink unless referenced to rail potential.
Source	Power ground reference for gate drive and current sensing	Low-inductance source connection critical for stable gate control and accurate current feedback in half-bridge.
Gate	Control terminal for channel modulation	High-impedance input requiring low-impedance driver (<2.2 Ω series resistance recommended per internal R_G).

Key Features

Feature	Design Value
Class-D–optimized R_DS(on)/Q_g ratio	Enables >90% efficiency at 300 kHz switching with minimal gate drive power and conduction loss trade-off.
Low Q_rr body diode	Reduces audible distortion and radiated emissions during zero-crossing transitions in PWM output filters.
Repetitive avalanche rated	Withstands ≥13 A inductive turn-off events without degradation-critical for speaker protection under clipping or short-circuit.
175 °C T_J rating	Permits full-rated power delivery in compact enclosures where ambient exceeds 85 °C, extending design lifetime.

Applications

High-Fidelity Home Audio Amplifiers

Professional PA System Output Stages

Use Scenario: Dual-channel Class-D amplifier delivering 100–150 W RMS per channel into 4–8 Ω loudspeakers with THD+N < 0.05% at full power.

IC Role / Device Role / Timing Role: Half-bridge high-side and low-side switching element; operates at 300–400 kHz PWM frequency with precise dead-time control.

Use Value: Low Q_rr and tight R_DS(on) tolerance ensure consistent channel matching and minimal intermodulation distortion across wide dynamic range.

Use Scenario: 500–1000 W modular rack-mount amplifier driving line arrays and subwoofers in live sound environments.

IC Role / Device Role / Timing Role: Primary output switch in paralleled half-bridge modules; handles peak currents >30 A with forced-air cooling.

Use Value: 175 °C T_J rating and repetitive avalanche capability maintain reliability during sustained bass transients and accidental short circuits.

Automotive Infotainment Subwoofer Modules

Active Studio Monitor Power Sections

Use Scenario: Compact 200–300 W D-class subwoofer amplifier integrated into vehicle head units or external DSP-controlled enclosures.

IC Role / Device Role / Timing Role: High-current output stage switching at 250–350 kHz; thermally coupled to aluminum chassis for passive cooling.

Use Value: TO-220AB package allows direct bolt-down heatsinking with R_θJC = 2.5 °C/W, enabling >200 W continuous output within automotive under-dash temperature limits.

Use Scenario: Bi-amplified near-field studio monitors with discrete analog input stages and digital PWM controllers.

IC Role / Device Role / Timing Role: Final output switch in dual-rail ±35 V Class-D output stage; driven by isolated gate drivers with matched propagation delay.

Use Value: Low C_rss/C_iss ratio (35/550 pF) suppresses Miller feedback, ensuring stable switching even with high dv/dt (>50 V/ns) in precision monitoring applications.

Equivalent & Alternatives

The following parts are listed as comparable options for similar Class-D audio amplifier applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW48N60M2	600 V, 0.065 Ω, higher V_DS, higher Q_g (45 nC), slower t_f (12 ns)	Designed for SMPS; lacks Class-D–specific Q_rr and t_r/t_f optimization	Acceptable for lower-frequency (<150 kHz), lower-fidelity audio where EMI and THD are less critical.
IXTH30N50L	500 V, 0.14 Ω, lateral construction, no intrinsic body diode, requires external anti-parallel diode	Targeted at high-voltage industrial switching; not validated for audio SOA or thermal cycling	Only suitable if external SiC diode is added and gate drive is re-optimized for asymmetric switching behavior.

Compared with STW48N60M2 and IXTH30N50L, IRFB4212PBF offers superior THD and EMI performance due to its specifically tuned Q_rr, low C_rss, and fast t_f, making it the only option qualified for high-fidelity, high-power Class-D output stages without additional compensation.

Availability

IRFB4212PBF is available at Aetrix Electronics and suitable for high-fidelity home audio amplifiers, professional PA system output stages, and automotive infotainment subwoofer modules requiring stable component supply, long-lifecycle availability, and traceable sourcing.

Supply support for IRFB4212PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, sensor, and automotive ICs with strong heritage in power MOSFET innovation.

This device belongs to Infineon's HEXFET® Power MOSFET product line, engineered specifically for high-efficiency, high-reliability switching in demanding analog power applications including audio amplification, motor drives, and industrial SMPS.

FAQ

What is the maximum continuous drain current for IRFB4212PBF at 100 °C case temperature?

The maximum continuous drain current is 18 A at T_C = 100 °C with V_GS = 10 V, as specified in the Absolute Maximum Ratings table. This value reflects thermal derating from the 100 A rating at 25 °C, constrained by R_θJC = 2.5 °C/W and T_J limit of 175 °C. Operation above this current requires active cooling or pulse-width reduction.

Does IRFB4212PBF require a gate resistor, and if so, what value is recommended?

Yes-a series gate resistor is required to dampen ringing and control dV/dt. Given its internal R_G = 2.2 Ω, a 5–10 Ω external resistor is recommended for typical Class-D gate drivers (e.g., IRS2092S). This balances switching speed (to minimize t_r/t_f) against overshoot and EMI, especially when driving multiple paralleled devices.

Can IRFB4212PBF be used in synchronous rectification mode in a Class-D output stage?

No-it is not designed for synchronous rectification. Its body diode is optimized for Class-D freewheeling, not bidirectional conduction. The device lacks dedicated source/drain symmetry or low reverse recovery tail current needed for SR control. External Schottky or SiC diodes are preferred for true synchronous rectification in high-efficiency variants.

Is IRFB4212PBF RoHS-compliant and lead-free?

Yes-the "PBF" suffix explicitly denotes lead-free (Pb-free) packaging per RoHS Directive 2011/65/EU. The device uses matte tin-plated leads and meets JEDEC J-STD-020 moisture sensitivity level (MSL) 1 requirements. No exemption codes apply, and full material declarations are available from Infineon's compliance portal.

IRFB4212PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 18A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 72.5mOhm @ 13A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 23 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 550 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 60W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

IRFB4212PBF FAQ

1.How can I place an order for IRFB4212PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFB4212PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFB4212PBF reliable?

The price and inventory of IRFB4212PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFB4212PBF is usually 5 days.

3.What payment methods are accepted for IRFB4212PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFB4212PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFB4212PBF?

IRFB4212PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFB4212PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFB4212PBF?

For technical support, including IRFB4212PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFB4212PBF requirements.

6.How does Aetrix verify that IRFB4212PBF is sourced from the original manufacturer or authorized distributors?

All IRFB4212PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFB4212PBF meets industry standards.

7.What is the process for return or replacement of IRFB4212PBF?

All IRFB4212PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFB4212PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFB4212PBF part is unused and in its original packaging.

Return procedure for IRFB4212PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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