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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFB4215PBF

Name: IRFB4215PBF
Brand: Infineon Technologies
SKU: IRFB4215PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFB4215PBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IRFB4215PBF.pdf

Description:: MOSFET N-CH 60V 115A TO220AB

Quantity:: RFQ Add To RFQ list

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Inventory:2,995

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Product details

Overview

IRFB4215PBF from Infineon Technologies (formerly International Rectifier) is a 60V, 115A N-channel enhancement-mode power MOSFET in TO-220AB package, featuring 9.0mΩ R_DS(on) at V_GS = 10V, fully avalanche-rated operation, and optimized switching performance for high-efficiency SMPS designs. It serves as a primary switching device in DC-DC converters, motor drives, and UPS systems requiring robust pulsed current handling up to 360A.

For engineers reviewing the IRFB4215PBF datasheet, IRFB4215PBF pinout, IRFB4215PBF application, or IRFB4215PBF equivalent, key selection criteria include its 0.56°C/W junction-to-case thermal resistance, 170nC total gate charge, 78–120ns reverse recovery time, and validated operation at 175°C junction temperature-critical for thermally constrained industrial power stages.

Technical Context

This HEXFET® device employs advanced silicon processing to achieve ultra-low on-resistance per die area while maintaining rugged unclamped inductive switching capability. Its intrinsic body diode exhibits 1.2V forward voltage at 90A and 25°C, with controlled reverse recovery (Q_rr = 250–380nC, t_rr = 78–120ns) under di/dt = 100A/µs conditions.

The MOSFET supports fast switching via low gate charge parameters (Q_gs = 39nC, Q_gd = 59nC) and exhibits stable threshold voltage (2.0–4.0V) across temperature. Its SOA is limited by R_DS(on) at short pulses and by package thermal constraints beyond 100µs, with linear derating of 1.8W/°C above 25°C case temperature.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	60V - Maximum blocking voltage before avalanche onset; defines usable input voltage range in buck/boost topologies.
R_DS(on)	9.0mΩ @ V_GS = 10V, I_D = 54A - Directly determines conduction loss in high-current paths; enables <1W loss at 115A DC.
I_D (T_C = 25°C)	115A - Continuous drain current rating at heatsink-mounted condition; sets minimum heatsink sizing baseline.
Q_g	170nC - Total gate charge required for full turn-on; governs driver strength requirement and switching loss trade-off.
t_rr	78–120ns - Body diode reverse recovery time; impacts shoot-through risk and EMI in synchronous rectification.
R_θJC	0.56°C/W - Junction-to-case thermal resistance; enables accurate junction temperature estimation using measured case temperature.
E_AS	1080–220mJ - Single-pulse avalanche energy rating; quantifies ruggedness during inductive turn-off transients.

Pinout & Package

IRFB4215PBF is housed in a through-hole TO-220AB package with isolated tab (drain-connected), rated for 10 lbf·in mounting torque and 300°C soldering tolerance at 1.6mm from case. Thermal interface requires flat, greased surface for optimal R_θCS = 0.24°C/W performance.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current path output / heat sink interface	Electrically connected to metal tab; must be electrically isolated from heatsink unless system design permits common-drain configuration.
Source	Reference node for gate drive and current sensing	Low-inductance return path; internal source inductance (L_S) affects switching waveform fidelity and dV/dt immunity.
Gate	Control terminal for channel modulation	High-impedance input requiring <170nC charge delivery; sensitive to ringing due to Q_gd-dominated Miller effect.

Key Features

Feature	Design Value
Fully avalanche rated	Validated single-pulse E_AS up to 1080mJ ensures reliable operation during inductive load switching faults without derating.
Optimized for SMPS	Low Q_gd/Q_g ratio (59/170nC ≈ 35%) reduces Miller-induced switching delay and improves hard-switching efficiency.
175°C operating junction	Enables use in sealed enclosures or high-ambient environments without forced air cooling, extending system lifetime under thermal stress.
Lead-free construction	Complies with RoHS Directive 2011/65/EU; "PBF" suffix confirms Pb-free plating and assembly process per JEDEC J-STD-020.

Applications

Server VRM Power Stage

Industrial Motor Drive Inverter

Use Scenario: High-density 12V input, 0.8–1.8V output VRMs supplying CPU/GPU cores with transient currents >500A.

IC Role / Device Role / Timing Role: Synchronous high-side switch in multiphase buck converter; operates at 300–1000kHz with tight dead-time control.

Use Value: 9.0mΩ R_DS(on) minimizes conduction loss at 115A continuous, while 170nC Q_g enables efficient gate driving with standard MOSFET drivers.

Use Scenario: 24–48V DC bus feeding three-phase BLDC or stepper motor inverters in factory automation equipment.

IC Role / Device Role / Timing Role: Low-side switching element in half-bridge leg; handles 81A continuous at 100°C case temperature.

Use Value: Fully avalanche-rated structure withstands inductive kickback during PWM commutation; 0.56°C/W R_θJC supports compact heatsink integration.

Uninterruptible Power Supply (UPS)

Telecom DC-DC Brick

Use Scenario: Bidirectional 48V battery interface in line-interactive UPS systems with peak loads up to 3kVA.

IC Role / Device Role / Timing Role: Main switching transistor in LLC resonant converter primary side; conducts 115A DC with 360A pulse capability.

Use Value: 60V V_DSS provides 20% margin over 48V nominal bus; 1080mJ E_AS ensures fault tolerance during grid switchover transients.

Use Scenario: Isolated 36–75V input to 12V/5V/3.3V outputs in telecom shelf power supplies meeting NEBS Level 3 requirements.

IC Role / Device Role / Timing Role: Primary-side switch in forward or active-clamp forward topology; operates at 200–500kHz with zero-voltage switching assist.

Use Value: Low C_oss (840pF) and Cr_ss (180pF) reduce capacitive switching losses; 175°C T_J rating supports derated operation in sealed chassis.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP60NF06	R_DS(on) = 10.5mΩ, Q_g = 120nC, V_DSS = 60V, TO-220	Lower gate charge reduces driver loss but higher R_DS(on) increases conduction loss at >80A.	Preferable where gate drive power is constrained and average current stays below 90A.
IXTH120N60L2	R_DS(on) = 6.2mΩ, Q_g = 220nC, V_DSS = 600V, TO-247	Higher voltage rating and lower on-resistance, but significantly larger gate charge and incompatible package.	Only suitable when 600V blocking is required; not a drop-in replacement due to footprint and drive demand mismatch.

Compared with STP60NF06 and IXTH120N60L2, IRFB4215PBF offers the best balance of low R_DS(on), moderate Q_g, and TO-220AB thermal performance for 48–60V industrial SMPS-enabling compact heatsinking without excessive gate drive complexity.

Availability

IRFB4215PBF is available at Aetrix Electronics and suitable for server VRMs, industrial motor drives, uninterruptible power supplies, and telecom DC-DC bricks requiring stable component supply and long-term industrial lifecycle support.

Supply support for IRFB4215PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and R&D centers.

This device belongs to Infineon's legacy HEXFET® power MOSFET product line, designed specifically for high-current, high-reliability switching in industrial power conversion systems-not consumer-grade or logic-level applications.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The IRFB4215PBF supports 81A continuous drain current at T_C = 100°C, as specified in its Absolute Maximum Ratings table. This value accounts for thermal derating from the 115A rating at 25°C and reflects package-limited current handling under realistic heatsink conditions.

Is the TO-220AB package electrically isolated?

Yes-the TO-220AB package used for IRFB4215PBF features an electrically isolated metal tab (drain-connected), enabling direct mounting to a grounded heatsink without short-circuit risk. The isolation voltage is rated per JEDEC standards for this package type.

Does IRFB4215PBF have a built-in body diode, and what are its key characteristics?

Yes-it integrates a fast-recovery p-n junction body diode with V_SD = 1.2V at I_S = 90A and T_J = 25°C, t_rr = 78–120ns, and Q_rr = 250–380nC. These values are measured under standardized di/dt = 100A/µs conditions and are critical for synchronous rectification design.

Can IRFB4215PBF be used in surface-mount designs?

No-Infineon explicitly states that TO-220AB packages are not recommended for surface-mount applications due to mechanical stress, thermal cycling reliability, and solder joint integrity concerns. Through-hole mounting with proper torque (10 lbf·in) is required.

IRFB4215PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 115A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 9mOhm @ 54A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 170 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 4080 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 270W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

IRFB4215PBF FAQ

1.How can I place an order for IRFB4215PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFB4215PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFB4215PBF reliable?

The price and inventory of IRFB4215PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFB4215PBF is usually 5 days.

3.What payment methods are accepted for IRFB4215PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFB4215PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFB4215PBF?

IRFB4215PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFB4215PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFB4215PBF?

For technical support, including IRFB4215PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFB4215PBF requirements.

6.How does Aetrix verify that IRFB4215PBF is sourced from the original manufacturer or authorized distributors?

All IRFB4215PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFB4215PBF meets industry standards.

7.What is the process for return or replacement of IRFB4215PBF?

All IRFB4215PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFB4215PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFB4215PBF part is unused and in its original packaging.

Return procedure for IRFB4215PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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