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Infineon Technologies IRFB4228PBF
- Part No.:
- IRFB4228PBF
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3
- Datasheet:
-
IRFB4228PBF.pdf
- Description:
- MOSFET N-CH 150V 83A TO220AB
- Quantity:
- Payment:
- Shipping:
Inventory:768
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Product details
Overview
IRFB4228PBF from Infineon Technologies (formerly International Rectifier) is a 150 V, 170 A, 12 mΩ N-channel enhancement-mode HEXFET® Power MOSFET in TO-220AB package, optimized for plasma display panel (PDP) sustain, energy recovery, and pass switch circuits. It delivers low EPULSE (≤120 µJ at 100°C), fast switching (tr = 59 ns, tf = 33 ns), and rugged 175°C junction operation.
For engineers reviewing the IRFB4228PBF datasheet, IRFB4228PBF pinout, IRFB4228PBF application, or IRFB4228PBF equivalent, key selection criteria include its low RDS(on) at 10 V gate drive, high repetitive avalanche rating (EAS = 500 mJ), and thermal robustness in high-current pulsed PDP sustain stages.
Technical Context
This MOSFET employs advanced planar process technology to achieve low gate charge (Qg = 71 nC typ.) and minimized output capacitance (Coss = 550 pF), enabling efficient high-frequency switching in resonant and hard-switched PDP sustain drivers. Its body diode exhibits trr = 76–110 ns and Qrr = 230–350 nC under 50 A, supporting controlled reverse recovery in bidirectional energy transfer paths.
The device features a negative temperature coefficient for VGS(th) (−14 mV/°C), ensuring current sharing stability in parallel configurations. Its SOA is defined up to 100 µs pulse width with RDS(on)-limited conduction, and it supports unclamped inductive switching with IAS = 170 A at TJ = 100°C and VDD = 120 V.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS (min) | 150 V - Withstands full PDP sustain voltage swing without breakdown. |
| RDS(on) (typ. @ 10 V) | 12 mΩ - Enables <1.2 W conduction loss at 100 A DC, critical for thermal management in compact PDP modules. |
| ID (cont. @ TC=100°C) | 170 A - Sustains peak sustain current in high-duty-cycle PDP operation without derating. |
| Qg (typ.) | 71 nC - Reduces gate driver power demand and enables <25 ns turn-on delay in high-speed sustain timing. |
| EPULSE (max @ TC=100°C) | 120 µJ - Limits single-pulse avalanche energy dissipation during fault transients in energy recovery circuits. |
| TJ (max) | 175°C - Allows reliable operation in thermally constrained PDP chassis with minimal heatsink volume. |
| tr / tf | 59 ns / 33 ns - Supports >5 MHz effective switching in resonant sustain topologies with low EMI generation. |
Pinout & Package
IRFB4228PBF uses the industry-standard TO-220AB package with isolated tab (drain-connected), featuring three leads: Gate (G), Drain (D), and Source (S). The metal tab is electrically connected to the drain terminal and must be insulated from heatsink unless drain is at system ground potential.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G | Gate control input | Receives 10 V logic-level drive; requires ≤71 nC charge for full enhancement; sensitive to ESD (±30 V max VGS). |
| D | Drain (high-side switch node) | Connected to PDP sustain bus (150 V); carries bidirectional pulsed current up to 330 A peak; tab is electrically active. |
| S | Source (return path) | Reference for gate drive; carries full load current; internal source inductance (LS = 7.5 nH) affects switching overshoot. |
Key Features
| Feature | Design Value |
|---|---|
| Optimized for PDP sustain | Low EPULSE and fast tr/tf enable precise, low-loss sustain pulse generation at 200–500 kHz. |
| Repetitive avalanche capability | EAS = 500 mJ (TJ = 25°C) allows repeated unclamped inductive turn-off without degradation in energy recovery loops. |
| High-temperature ruggedness | Rated for continuous 175°C junction operation, supporting compact thermal design in sealed PDP enclosures. |
| Low Qgd / Crss | Qgd = 21 nC and Crss = 100 pF minimize Miller-induced switching delays and improve dv/dt immunity in high-noise PDP environments. |
| Body diode with controlled Qrr | Qrr = 230–350 nC and trr = 76–110 ns support predictable reverse recovery in bidirectional current paths of resonant converters. |
Applications
| Plasma Display Panel (PDP) Sustain Circuit | PDP Energy Recovery Converter |
|---|---|
Use Scenario: Driving alternating sustain pulses across PDP panel electrodes at 200–500 kHz with 150 V amplitude and 100+ A peak current. IC Role / Device Role / Timing Role: High-current, high-voltage switch controlling sustain bus polarity reversal in half-bridge configuration. Use Value: Low RDS(on) and fast switching minimize conduction and switching losses, extending panel lifetime and reducing thermal stress on driver PCB. |
Use Scenario: Recovering stored energy from PDP electrode capacitance during sustain pulse termination using resonant LC topology. IC Role / Device Role / Timing Role: Bidirectional switch enabling zero-voltage switching (ZVS) in flyback-type energy recovery stage. Use Value: Repetitive avalanche rating and low Qrr body diode ensure reliable energy recycling over billions of cycles without failure. |
| PDP Pass Switch for Addressing | Industrial High-Current DC Switching |
Use Scenario: Selectively enabling/disabling address electrode segments during write phase with fast edge control. IC Role / Device Role / Timing Role: Low-inductance, low-RDS(on) pass transistor routing column drive signals to subfield electrodes. Use Value: LS = 7.5 nH and short fall time (33 ns) suppress ringing and crosstalk, improving grayscale accuracy and image fidelity. |
Use Scenario: Solid-state replacement for mechanical contactors in industrial battery disconnect, UPS bypass, or motor braking circuits. IC Role / Device Role / Timing Role: High-reliability, high-current DC switch handling 170 A continuous and 330 A pulsed loads. Use Value: 175°C TJ rating and TO-220AB mechanical robustness support long-term operation in harsh factory environments without derating. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-current, high-voltage power switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP160N10F7 | 100 V VDS, 160 A ID, 5.5 mΩ RDS(on), lower voltage rating but superior RDS(on) and Qg (45 nC). | Not suitable for 150 V PDP sustain; limited to ≤100 V DC bus applications like motor drives or SMPS primary switches. | Select only if system voltage is ≤100 V and lowest conduction loss is prioritized over voltage margin. |
| IXFH170N15T2 | 150 V VDS, 170 A ID, 13 mΩ RDS(on), higher Qg (110 nC), TO-247 package with improved thermal resistance (RθJC = 0.35°C/W). | Same voltage/current class but larger footprint; better thermal performance for continuous high-power operation beyond PDP duty cycle. | Prefer when board space allows TO-247 and junction temperature must stay below 150°C under sustained 150 A load. |
Compared with STP160N10F7 and IXFH170N15T2, IRFB4228PBF offers the optimal balance of 150 V rating, TO-220AB form factor, and low EPULSE for PDP-specific pulsed switching-whereas STP160N10F7 sacrifices voltage headroom for efficiency, and IXFH170N15T2 trades package size for enhanced thermal headroom.
Availability
IRFB4228PBF is available at Aetrix Electronics and suitable for plasma display panel sustain circuits, PDP energy recovery converters, and industrial high-current DC switching applications requiring stable component supply and long-lifecycle support.
Supply support for IRFB4228PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and consumer markets.
IRFB4228PBF belongs to Infineon's legacy HEXFET® Power MOSFET product line, originally developed by International Rectifier and designed specifically for high-reliability, high-pulse-current applications in plasma display and industrial power conversion systems.
FAQ
Is IRFB4228PBF RoHS-compliant and lead-free?
Yes, IRFB4228PBF is RoHS-compliant and lead-free, as indicated by the "PbF" suffix in its part number and confirmed in Infineon's official packaging documentation. It meets EU Directive 2011/65/EU and uses matte tin plating on leads with no lead content in die attach or molding compound.
What is the maximum safe operating area (SOA) limitation at 100°C case temperature?
At TC = 100°C, the SOA is limited to 170 A continuous drain current at VDS ≤ 10 V, or 50 A at VDS = 100 V for pulse widths ≤ 100 µs. This reflects RDS(on)-dominated conduction limits and thermal constraints-exceeding these values risks thermal runaway or bond wire fusing.
Can IRFB4228PBF be used in synchronous rectification applications?
No-IRFB4228PBF is not optimized for synchronous rectification. Its body diode has relatively high VSD (1.3 V) and Qrr (230–350 nC), resulting in higher conduction and recovery losses compared to dedicated SR MOSFETs. Use only in unidirectional switching or where body diode conduction is incidental.
Does the TO-220AB package require thermal compound when mounted to a heatsink?
Yes-thermal compound (e.g., silicone-based grease or phase-change pad) is required between the isolated drain tab and heatsink to achieve the specified RθJC = 0.45°C/W. Without it, interfacial air gaps increase thermal resistance by >3×, risking premature thermal shutdown or parametric drift above 130°C junction temperature.
IRFB4228PBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- TO-220-3
- Packaging:
- Tube
- Product Status:
- Last Time Buy
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 150 V
- Current - Continuous Drain (Id) @ 25°C:
- 83A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 15mOhm @ 33A, 10V
- Vgs(th) (Max) @ Id:
- 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 107 nC @ 10 V
- Vgs (Max):
- ±30V
- Input Capacitance (Ciss) (Max) @ Vds:
- 4530 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 330W (Tc)
- Operating Temperature:
- -40°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220AB
IRFB4228PBF FAQ
1.How can I place an order for IRFB4228PBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRFB4228PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRFB4228PBF reliable?
The price and inventory of IRFB4228PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFB4228PBF is usually 5 days.
3.What payment methods are accepted for IRFB4228PBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFB4228PBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRFB4228PBF?
IRFB4228PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRFB4228PBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRFB4228PBF?
For technical support, including IRFB4228PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFB4228PBF requirements.
6.How does Aetrix verify that IRFB4228PBF is sourced from the original manufacturer or authorized distributors?
All IRFB4228PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFB4228PBF meets industry standards.
7.What is the process for return or replacement of IRFB4228PBF?
All IRFB4228PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFB4228PBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRFB4228PBF part is unused and in its original packaging.
Return procedure for IRFB4228PBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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