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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFB4233PBF

Name: IRFB4233PBF
Brand: Infineon Technologies
SKU: IRFB4233PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFB4233PBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IRFB4233PBF.pdf

Description:: MOSFET N-CH 230V 56A TO220AB

Quantity:: RFQ Add To RFQ list

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Inventory:2,578

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Product details

Overview

IRFB4233PBF from Infineon Technologies (formerly International Rectifier) is a 230 V, 114 A, 31 mΩ N-channel enhancement-mode power MOSFET in TO-220AB package, optimized for plasma display panel (PDP) sustain, energy recovery, and pass switch circuits. It features low EPULSE (≤1000 µJ at 184 V), 120 nC total gate charge, 175°C maximum junction temperature, and repetitive avalanche capability up to 970 mJ.

For engineers reviewing the IRFB4233PBF datasheet, IRFB4233PBF pinout, IRFB4233PBF application, or IRFB4233PBF equivalent, key selection criteria include its 230 V V_DSS, 31 mΩ R_DS(on) @ 10 V, 114 A I_RP @ T_C = 100°C, fast switching (t_r = 71 ns, t_f = 41 ns), and robust 175°C thermal rating for high-reliability PDP and industrial switching designs.

Technical Context

This MOSFET employs advanced HEXFET® process technology with optimized parameters for high-current, high-voltage pulse operation in PDP sustain drivers. Its low Q_G (120 nC typ.) enables fast gate drive response, while low C_iss (5510 pF) and C_oss (480 pF) reduce switching losses in resonant and hard-switched topologies.

The device integrates a robust body diode with 190–280 ns reverse recovery time and 760–1140 nC Q_rr, supporting bidirectional current flow in energy recovery stages. Its 0.402°C/W R_θJC and 175°C T_J(max) support high-power density mounting on heatsinks with greased interface.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	230 V - Withstands up to 230 V drain-source blocking voltage, suitable for 184 V PDP sustain bus operation with margin.
R_DS(on) @ 10 V	31 mΩ typ. - Enables <1.2 W conduction loss at 60 A continuous drain current in PDP sustain stage.
I_RP @ T_C = 100°C	114 A - Supports high peak current pulses required for PDP cell addressing without thermal runaway.
Q_G	120 nC typ. - Reduces gate driver power demand and enables sub-100 ns turn-on/turn-off transitions.
E_PULSE	≤1000 µJ @ 184 V - Limits single-pulse avalanche energy dissipation during unclamped inductive switching events.
T_J(max)	175°C - Allows sustained operation under high ambient and self-heating conditions in enclosed PDP chassis.
t_r/t_f	71 ns / 41 ns - Minimizes switching transition time, reducing overlap losses in high-frequency sustain waveforms.

Pinout & Package

IRFB4233PBF is housed in a through-hole TO-220AB package with isolated tab (drain-connected). The package provides low thermal resistance (R_θJC = 0.402°C/W) and mechanical robustness for high-power industrial mounting.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current path output terminal	Electrically connected to metal tab; must be electrically isolated from heatsink unless drain-referenced layout is intended.
Source	Reference node for gate control and current return	Provides low-inductance return path for high di/dt currents; internal source inductance LS = 7.5 nH impacts switching behavior.
Gate	Control input for channel modulation	High-impedance MOS gate requiring <5 V threshold (V_GS(th) = 3.0–5.0 V); sensitive to ESD and ringing due to Q_G = 120 nC.

Key Features

Feature	Design Value
Low EPULSE rating	≤1000 µJ at 184 V - Reduces localized thermal stress during unclamped inductive turn-off in PDP sustain circuits.
Optimized for PDP sustain	230 V V_DSS, 114 A I_RP, 31 mΩ R_DS(on) - Matches PDP bus voltage, peak current, and conduction loss targets.
Repetitive avalanche capability	970 mJ E_AS @ 25°C - Enables reliable operation under repeated inductive fault conditions without derating.
High-temperature ruggedness	175°C T_J(max) with 0.402°C/W R_θJC - Supports stable performance in thermally constrained PDP module enclosures.

Applications

Plasma Display Panel Sustain Circuit

PDP Energy Recovery Switch

Use Scenario: Driving row/column electrodes in AC plasma displays with high-voltage, high-frequency sustain waveforms.

IC Role / Device Role / Timing Role: High-side or half-bridge switch handling 184 V, 100 kHz+ sustain pulses with 114 A peak current.

Use Value: Low R_DS(on) (31 mΩ) and fast switching (t_r/t_f = 71/41 ns) minimize conduction and switching losses across millions of cycles.

Use Scenario: Recovering and recycling energy stored in PDP panel capacitance between sustain phases.

IC Role / Device Role / Timing Role: Bidirectional synchronous switch controlling resonant LC tank discharge/recharge paths.

Use Value: Integrated body diode with 190–280 ns t_rr and low Q_rr (760–1140 nC) enables efficient bidirectional energy transfer with minimal recovery loss.

PDP Pass Switch

Industrial DC-DC Converter Switch

Use Scenario: Selectively enabling/disabling sustain voltage to individual PDP segments during addressing.

IC Role / Device Role / Timing Role: Low-loss series pass element operating in linear or saturated mode with precise gate control.

Use Value: Tight V_GS(th) tolerance (3.0–5.0 V) and low ∆V_GS(th)/∆T_J (−14 mV/°C) ensure stable on/off behavior across wide temperature range.

Use Scenario: Primary-side high-voltage switch in 200–400 V industrial isolated DC-DC converters.

IC Role / Device Role / Timing Role: Hard-switched or quasi-resonant power switch handling 230 V bus and >100 A pulsed loads.

Use Value: Repetitive avalanche rating (970 mJ) and 175°C T_J(max) allow safe operation under transient overvoltage and overload conditions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage, high-current power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW20NK50Z	500 V V_DSS, 20 A I_D, 0.22 Ω R_DS(on) - higher voltage rating but lower current and much higher on-resistance.	Suitable for 400 V systems with lower peak current; not viable for PDP sustain due to insufficient I_RP and excessive conduction loss.	Select only if system requires >400 V blocking and operates below 30 A peak current.
IXFH30N20X3	200 V V_DSS, 30 A I_D, 40 mΩ R_DS(on), 150°C T_J(max) - lower voltage, current, and thermal rating than IRFB4233PBF.	Applicable in lower-power PDP auxiliary circuits or 100–200 V SMPS; lacks required 114 A I_RP and 175°C ruggedness for main sustain stage.	Consider only for space-constrained or cost-sensitive designs where full IRFB4233PBF performance is not required.

Compared with STW20NK50Z and IXFH30N20X3, IRFB4233PBF uniquely delivers 230 V/114 A/31 mΩ performance with 175°C operation and verified repetitive avalanche capability-making it irreplaceable for demanding PDP sustain and energy recovery applications requiring simultaneous high voltage, high current, and thermal resilience.

Availability

IRFB4233PBF is available at Aetrix Electronics and suitable for plasma display panel (PDP) sustain circuits, industrial DC-DC converters, and high-reliability energy recovery systems requiring stable component supply and long-term manufacturability.

Supply support for IRFB4233PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive, and industrial control ICs and discrete devices.

IRFB4233PBF belongs to Infineon's HEXFET® Power MOSFET product line, engineered specifically for high-efficiency, high-reliability switching in plasma display, industrial power conversion, and resonant circuit applications.

FAQ

What is the maximum continuous drain current for IRFB4233PBF at 100°C case temperature?

The maximum continuous drain current (I_D) for IRFB4233PBF is 30 A at T_C = 100°C and V_GS = 10 V. This rating reflects thermal limits under steady-state conduction; the device supports 114 A pulsed current (I_DM) for short durations with appropriate duty cycle control.

Does IRFB4233PBF have a built-in body diode, and what are its key characteristics?

Yes, IRFB4233PBF integrates a monolithic body diode with typical forward voltage V_SD ≤ 1.0 V at 39 A, reverse recovery time t_rr = 190–280 ns, and reverse recovery charge Q_rr = 760–1140 nC. These values are measured at T_J = 25°C, V_DD = 50 V, and dI/dt = 100 A/µs, enabling efficient bidirectional operation in PDP energy recovery circuits.

Can IRFB4233PBF be used in surface-mount designs?

No - IRFB4233PBF uses a TO-220AB package explicitly not recommended for surface-mount applications per manufacturer note. It requires through-hole mounting with mechanical screw attachment (6-32 or M3, 10 lb·in torque) and thermal interface to a heatsink for proper thermal management.

What is the gate threshold voltage range, and how does it vary with temperature?

The gate threshold voltage V_GS(th) for IRFB4233PBF is specified from 3.0 V to 5.0 V at T_J = 25°C and I_D = 250 µA. Its temperature coefficient is −14 mV/°C, meaning V_GS(th) decreases linearly with rising junction temperature - critical for ensuring consistent turn-on behavior across the full −40°C to +175°C operating range.

IRFB4233PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 230 V

Current - Continuous Drain (Id) @ 25°C:: 56A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 37mOhm @ 28A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 170 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 5510 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 370W (Tc)

Operating Temperature:: -40°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

IRFB4233PBF FAQ

1.How can I place an order for IRFB4233PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFB4233PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFB4233PBF reliable?

The price and inventory of IRFB4233PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFB4233PBF is usually 5 days.

3.What payment methods are accepted for IRFB4233PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFB4233PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFB4233PBF?

IRFB4233PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFB4233PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFB4233PBF?

For technical support, including IRFB4233PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFB4233PBF requirements.

6.How does Aetrix verify that IRFB4233PBF is sourced from the original manufacturer or authorized distributors?

All IRFB4233PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFB4233PBF meets industry standards.

7.What is the process for return or replacement of IRFB4233PBF?

All IRFB4233PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFB4233PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFB4233PBF part is unused and in its original packaging.

Return procedure for IRFB4233PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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