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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFB42N20D

Name: IRFB42N20D
Brand: Infineon Technologies
SKU: IRFB42N20D
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFB42N20D

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IRFB42N20D.pdf

Description:: MOSFET N-CH 200V 44A TO220AB

Quantity:: RFQ Add To RFQ list

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Inventory:8,498

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Product details

Overview

IRFB42N20D from Infineon (formerly International Rectifier) is a 200V, 44A N-channel enhancement-mode HEXFET Power MOSFET in TO-220AB package, optimized for high-frequency DC-DC converters and motor control. It features R_DS(on) = 0.055 Ω @ V_GS = 10 V, Q_g = 91 nC (typ), and 510 mJ single-pulse avalanche energy - enabling robust switching in uninterruptible power supplies and hard-switched SMPS topologies.

For engineers reviewing the IRFB42N20D datasheet, IRFB42N20D pinout, IRFB42N20D application, or IRFB42N20D equivalent, key selection criteria include its 200V V_DSS, low gate-to-drain charge (Q_gd = 43 nC typ), fully characterized C_oss,eff = 400 pF, and validated avalanche ruggedness - critical for flyback, LLC resonant, and half-bridge designs operating at >100 kHz.

Technical Context

This MOSFET employs planar vertical HEXFET architecture with optimized cell pitch and trench-assisted drift region to achieve balanced conduction and switching loss trade-offs. Its gate charge profile (Q_gs: 24 nC, Q_gd: 43 nC) supports precise timing control in synchronous rectification and PWM-driven H-bridges.

Thermal design is enabled by R_θJC = 0.45 °C/W and R_θCS = 0.50 °C/W (greased flat surface), while the body diode exhibits t_rr = 220 ns and Q_rr = 1860 nC - parameters directly specified under I_F = 26 A, di/dt = 100 A/µs, and T_J = 25 °C.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	200 V - Withstands up to 200 V drain-source blocking voltage before avalanche onset
R_DS(on) max	0.055 Ω @ V_GS = 10 V, I_D = 26 A - Determines conduction loss in continuous current paths
I_D @ T_C = 25°C	44 A - Maximum continuous drain current with case temperature maintained at 25 °C
Q_g typ	91 nC - Total gate charge required to switch device; governs driver strength requirements
E_AS	510 mJ - Single-pulse avalanche energy rating; enables unclamped inductive switching reliability
C_oss,eff	400 pF - Effective output capacitance over 0–160 V V_DS ramp; used for soft-switching timing calculations
t_r/t_f	69 ns / 32 ns @ I_D = 26 A, R_G = 1.8 Ω - Rise/fall times define minimum achievable dead time in bridge circuits

Pinout & Package

IRFB42N20D uses the industry-standard TO-220AB package with isolated tab (drain-connected), rated for 330 W power dissipation at T_C = 25 °C and linear derating of 2.2 W/°C above that point.

Pin/Terminal	Circuit Role	Design Meaning
1 – GATE	Control electrode	Receives 10 V logic-level drive; threshold voltage range 3.0–5.5 V ensures compatibility with standard PWM controllers
2 – DRAIN	High-side power terminal	Internally connected to metal tab; must be electrically isolated from heatsink unless system ground reference permits
3 – SOURCE	Power return path	Serves as reference for gate drive and current sensing; low-inductance layout critical for EMI control
4 – DRAIN	Secondary drain connection	Provides redundant current path and improved thermal spreading; tied internally to Pin 2 and tab

Key Features

Feature	Design Value
Low Q_gd/Q_g ratio	47% (43/91 nC) - Reduces Miller-induced shoot-through risk in high-dV/dt environments
Characterized C_oss,eff	400 pF - Enables accurate zero-voltage switching (ZVS) timing prediction in resonant converters
Avalanche-rated	510 mJ single-pulse - Eliminates need for external snubbers in inductive load switching
Lead-free construction	Pb-free per JEDEC J-STD-609 - Complies with RoHS and industrial environmental compliance mandates
Body diode t_rr	220 ns (typ) - Supports synchronous rectification in secondary-side applications without external Schottky replacement

Applications

High-Frequency DC-DC Converters

Motor Control (BLDC/Stepper)

Use Scenario: 300–500 kHz isolated flyback and forward converters in telecom power supplies.

IC Role / Device Role / Timing Role: Primary-side switching element handling 44 A peak currents with minimal conduction loss.

Use Value: 0.055 Ω R_DS(on) and 91 nC Q_g enable >92% efficiency at full load while maintaining thermal margin at 70 °C ambient.

Use Scenario: Half-bridge inverter driving 1–3 kW permanent magnet BLDC motors in HVAC and industrial fans.

IC Role / Device Role / Timing Role: High-side and low-side switching transistor with fast turn-off (t_f = 32 ns) to minimize cross-conduction losses.

Use Value: 510 mJ avalanche rating allows safe operation during motor phase commutation transients without external clamping.

Uninterruptible Power Supplies

Industrial SMPS

Use Scenario: Online double-conversion UPS inverters delivering clean 230 VAC output from 400 VDC bus.

IC Role / Device Role / Timing Role: Output stage MOSFET in full-bridge topology switching at 20–40 kHz with 100% duty-cycle capability.

Use Value: R_θJC = 0.45 °C/W and 330 W P_D rating support sustained 25 A RMS conduction without forced air cooling.

Use Scenario: 1–3 kW open-frame industrial power supplies for PLCs and factory automation systems.

IC Role / Device Role / Timing Role: Main switch in active clamp forward or asymmetrical half-bridge topologies.

Use Value: Fully characterized C_iss/C_oss/C_rss curves allow precise gate driver loop tuning and EMI filtering design.

Equivalent & Alternatives

The following parts are listed as comparable options for similar power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP20NM20	R_DS(on) = 0.06 Ω, Q_g = 50 nC, no published E_AS rating	Lacks avalanche qualification; requires external protection in inductive loads	Preferable only in cost-sensitive, low-transient applications where snubbers are already present
IXTH30N20L	R_DS(on) = 0.052 Ω, Q_g = 110 nC, TO-247 package, higher P_D	Higher gate drive demand and larger footprint; better for >100 A parallel configurations	Select when thermal headroom is constrained and board space allows TO-247 mounting

Compared with STP20NM20 and IXTH30N20L, IRFB42N20D uniquely balances low Q_gd, verified avalanche ruggedness, and TO-220AB manufacturability - making it optimal for mid-power SMPS where reliability, layout simplicity, and driver compatibility are jointly prioritized.

Availability

IRFB42N20D is available at Aetrix Electronics and suitable for high-frequency DC-DC converters, motor control inverters, and uninterruptible power supplies requiring stable component supply across multi-year production cycles.

Supply support for IRFB42N20D includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive microcontrollers, and industrial sensors.

The HEXFET Power MOSFET product line was developed specifically for high-efficiency, high-reliability power conversion in industrial, telecom, and renewable energy systems - emphasizing ruggedness, predictable switching behavior, and thermal stability.

FAQ

Is IRFB42N20D suitable for 400 V DC bus applications?

No - its absolute maximum V_DSS is 200 V, and operation above this rating risks immediate avalanche breakdown. For 400 V bus designs, use devices rated ≥600 V such as IPP60R099C7 or STW62N60M2, which provide sufficient voltage margin per IEC 61000-4-5 surge standards.

What is the recommended gate resistor value for 200 kHz switching?

A 10 Ω gate resistor is recommended for 200 kHz operation with standard 1 A peak gate drivers. This value balances switching speed (t_f ≈ 32 ns) against ringing suppression, given Q_gd = 43 nC and typical driver output impedance. Lower values increase EMI risk; higher values raise switching losses disproportionately.

Does IRFB42N20D require a heatsink in TO-220AB mounting?

Yes - even at 25 °C ambient, continuous 44 A operation exceeds its 2.4 W ambient-limited power dissipation. A heatsink with R_θSA ≤ 1.5 °C/W is required to maintain T_J < 150 °C at full load, assuming R_θJC = 0.45 °C/W and R_θCS = 0.50 °C/W with thermal grease.

Can the body diode replace an external freewheeling diode in buck converters?

Only in low-frequency (<50 kHz), low-current (<10 A) buck stages - its t_rr = 220 ns and Q_rr = 1860 nC cause significant recovery loss and voltage overshoot at higher frequencies. For 200 kHz+ buck regulators, a discrete Schottky diode (e.g., SS34) remains necessary for efficiency and reliability.

IRFB42N20D Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 200 V

Current - Continuous Drain (Id) @ 25°C:: 44A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 55mOhm @ 26A, 10V

Vgs(th) (Max) @ Id:: 5.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 140 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 3430 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 2.4W (Ta), 330W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

IRFB42N20D FAQ

1.How can I place an order for IRFB42N20D through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFB42N20D on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFB42N20D reliable?

The price and inventory of IRFB42N20D are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFB42N20D is usually 5 days.

3.What payment methods are accepted for IRFB42N20D?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFB42N20D transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFB42N20D?

IRFB42N20D orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFB42N20D order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFB42N20D?

For technical support, including IRFB42N20D datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFB42N20D requirements.

6.How does Aetrix verify that IRFB42N20D is sourced from the original manufacturer or authorized distributors?

All IRFB42N20D products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFB42N20D meets industry standards.

7.What is the process for return or replacement of IRFB42N20D?

All IRFB42N20D units undergo pre-shipment inspection (PSI). If there is an issue with IRFB42N20D, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFB42N20D part is unused and in its original packaging.

Return procedure for IRFB42N20D:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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