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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFB4310GPBF

Name: IRFB4310GPBF
Brand: Infineon Technologies
SKU: IRFB4310GPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFB4310GPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IRFB4310GPBF.pdf

Description:: MOSFET N-CH 100V 130A TO220AB

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRFB4310GPBF from Infineon Technologies (formerly International Rectifier) is a 100 V, 130 A N-channel enhancement-mode HEXFET® Power MOSFET in TO-220AB package, optimized for high-frequency hard-switched and synchronous rectification applications. It delivers typ. 5.6 mΩ R_DS(on), 170 nC total gate charge, and enhanced body diode dV/dt (2.0 V/ns) and dI/dt (550 A/µs) capability, enabling robust operation in SMPS and UPS systems.

For engineers reviewing the IRFB4310GPBF datasheet, IRFB4310GPBF pinout, IRFB4310GPBF application, or IRFB4310GPBF equivalent, key selection criteria include avalanche energy rating (300 mJ), SOA-limited pulsed drain current (550 A), thermal resistance (R_θJC = 0.50 °C/W), and body diode reverse recovery performance (Q_rr = 82–120 nC).

Technical Context

This MOSFET employs planar silicon process technology with optimized cell pitch and trench-assisted charge balance to achieve low on-resistance while maintaining high avalanche ruggedness. Its gate structure supports fast switching (t_r = 110 ns, t_f = 78 ns) and stable Miller plateau behavior under high dV/dt stress.

The integrated body diode exhibits low V_SD (max. 1.3 V), tight trr distribution (45–68 ns at 25°C), and controlled IRRM (≤3.3 A), making it suitable for freewheeling and bidirectional conduction in resonant and phase-shifted topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	100 V - Maximum blocking voltage before avalanche onset; defines use in ≤65 V bus designs with 1.5× safety margin.
R_DS(on) typ.	5.6 mΩ - Enables <1.5 W conduction loss at 75 A DC, critical for high-current synchronous rectifiers.
I_D @ T_C = 25°C	130 A - Continuous current rating at case temperature 25°C; limited by package thermal capacity, not silicon.
Q_g	170 nC - Total gate charge determines driver strength requirement; impacts switching loss in 100–500 kHz SMPS.
E_AS	300 mJ - Single-pulse avalanche energy rating; supports unclamped inductive switching up to 75 A with L = 0.35 mH.
trr / Q_rr	45–68 ns / 82–120 nC - Body diode recovery metrics directly affect cross-conduction loss and EMI in bridge configurations.
R_θJC	0.50 °C/W - Junction-to-case thermal resistance enables 260 W power dissipation before reaching 175°C junction limit at 25°C case.

Pinout & Package

IRFB4310GPBF uses the standard TO-220AB package with isolated tab (drain-connected). The three terminals are arranged in linear order: Source (left), Gate (center), Drain (right), with the metal tab electrically connected to the Drain terminal and thermally coupled to heatsink.

Pin/Terminal	Circuit Role	Design Meaning
Source (S)	Power return path and reference node for gate drive	Low-inductance connection point for source loop; ties to PCB ground plane or low-side switch node.
Gate (G)	Control electrode for channel modulation	High-impedance input requiring <2.6 Ω series resistance to damp ringing; sensitive to dV/dt coupling from drain.
Drain (D)	Main power output terminal and heat-sinking surface	Connected to metal tab; must be isolated from heatsink unless system design permits drain-referenced mounting.

Key Features

Feature	Design Value
Enhanced avalanche ruggedness	Rated for 300 mJ single-pulse avalanche energy with validated SOA curves up to 175°C junction temperature.
Optimized body diode dynamics	Controlled reverse recovery (trr ≤ 68 ns, Qrr ≤ 120 nC) reduces shoot-through risk in synchronous buck and LLC half-bridge.
Low C_{oss eff.}(TR)	720.1 pF effective output capacitance (time-related) minimizes turn-off loss during hard switching at >200 kHz.
Halogen-free & lead-free	Meets RoHS Directive 2011/65/EU and JEDEC J-STD-020 reflow profile for lead-free assembly.
Thermally robust package	TO-220AB construction provides 0.50 °C/W R_θJC and supports 10 lb·in mounting torque for reliable thermal interface pressure.

Applications

Server VRM Synchronous Rectifier

Industrial UPS Inverter Stage

Use Scenario: High-current (≥100 A), high-efficiency (>95%) 12 V input VRM supplying CPU/GPU core power in data center servers.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier in multiphase buck converter; operates with 500–800 kHz PWM and sub-100 ns dead-time control.

Use Value: 5.6 mΩ R_DS(on) cuts conduction loss by >30% vs. legacy 8 mΩ devices; fast body diode recovery prevents cross-conduction during phase interleaving.

Use Scenario: Bidirectional DC-AC inverter stage in 3 kVA industrial uninterruptible power supply with battery backup.

IC Role / Device Role / Timing Role: High-side switching element in full-bridge topology; subjected to repetitive unclamped inductive switching during transfer events.

Use Value: 300 mJ E_AS rating ensures reliable operation during grid-fail transitions without external snubbers; 550 A pulsed current handles surge loads.

Telecom Rectifier Module

EV Onboard Charger PFC Stage

Use Scenario: 48 V telecom rectifier module converting AC to -48 V DC with >96% efficiency and 50–100 kHz switching.

IC Role / Device Role / Timing Role: Active clamp switch in forward or active-clamp flyback topology; exposed to high dV/dt transients during clamp reset.

Use Value: 2.0 V/ns dV/dt ruggedness prevents false turn-on; low C_{oss eff.}(ER) = 650 pF reduces clamp capacitor stress and improves energy recovery.

Use Scenario: Boost PFC stage in 6.6 kW EV onboard charger operating at 65–100 kHz with universal AC input (90–264 VAC).

IC Role / Device Role / Timing Role: Main switching device in continuous conduction mode (CCM) boost converter; conducts 30+ A RMS with high di/dt during zero-crossing.

Use Value: Enhanced dI/dt capability (550 A/µs) sustains body diode commutation without oscillation; 130 A ID rating supports peak line-current surges.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP130N10F7	100 V, 130 A, R_DS(on) = 5.3 mΩ, Q_g = 150 nC, TO-220FP package (non-isolated tab)	Lower gate charge reduces driver loss but non-isolated tab requires insulating washer for heatsink mounting.	Select when minimizing gate drive loss is prioritized and mechanical isolation can be managed externally.
IXTH130N10L2	100 V, 130 A, R_DS(on) = 5.8 mΩ, Q_g = 185 nC, TO-247AC package with higher R_θJC (0.35 °C/W)	Superior thermal performance enables higher sustained power, but larger footprint and cost increase.	Select for >300 W continuous operation where heatsink space allows TO-247 and junction temperature must stay <150°C.

Compared with STP130N10F7 and IXTH130N10L2, IRFB4310GPBF offers balanced trade-offs: TO-220AB's isolated tab simplifies heatsink integration, its 300 mJ E_AS exceeds both alternatives, and its 720 pF C_{oss eff.}(TR) provides better hard-switching efficiency than the IXTH part's 850 pF.

Availability

IRFB4310GPBF is available at Aetrix Electronics and suitable for high-efficiency synchronous rectification in SMPS, uninterruptible power supply inverters, and high-frequency hard-switched circuits requiring stable component supply and long-term industrial lifecycle support.

Supply support for IRFB4310GPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive, and industrial control ICs and discrete devices.

IRFB4310GPBF belongs to the HEXFET® Power MOSFET product line, engineered for high-power density switching in industrial, telecom, and computing power supplies where avalanche reliability and body diode performance are critical.

FAQ

Is IRFB4310GPBF suitable for surface-mount assembly?

No. The TO-220AB package is explicitly not recommended for surface-mount applications per Infineon's datasheet (Rev. 10/2008). It requires through-hole mounting with mechanical screw attachment to a heatsink. Thermal and mechanical reliability cannot be assured using reflow soldering or paste-based SMT processes.

What is the maximum allowable gate-to-source voltage for safe operation?

The absolute maximum V_GS is ±20 V. Operation above +20 V risks permanent gate oxide damage; below –20 V may cause threshold shift or gate leakage. Recommended gate drive is +10 V to +15 V for full enhancement, with clamping advised to prevent overshoot during fast switching.

Does IRFB4310GPBF have a fully characterized avalanche SOA?

Yes. The datasheet provides Figures 14 and 15 showing validated single-pulse and repetitive avalanche energy limits across temperature and pulse width. E_AS = 300 mJ is thermally limited at T_J = 25°C, with derating to 100 mJ at T_J = 175°C, all measured under standardized unclamped inductive test conditions (L = 0.35 mH, R_G = 25 Ω).

How does the body diode's reverse recovery compare to standard MOSFETs?

IRFB4310GPBF's body diode shows trr = 45–68 ns and Q_rr = 82–120 nC at T_J = 25–125°C, significantly faster and lower-charge than generic 100 V MOSFETs (typ. trr > 100 ns, Q_rr > 200 nC). This is achieved via tailored lifetime control and epitaxial layer optimization, reducing switching loss and EMI in bridge configurations.

IRFB4310GPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 130A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 7mOhm @ 75A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 250 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 7670 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 300W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

IRFB4310GPBF FAQ

1.How can I place an order for IRFB4310GPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFB4310GPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFB4310GPBF reliable?

The price and inventory of IRFB4310GPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFB4310GPBF is usually 5 days.

3.What payment methods are accepted for IRFB4310GPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFB4310GPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFB4310GPBF?

IRFB4310GPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFB4310GPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFB4310GPBF?

For technical support, including IRFB4310GPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFB4310GPBF requirements.

6.How does Aetrix verify that IRFB4310GPBF is sourced from the original manufacturer or authorized distributors?

All IRFB4310GPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFB4310GPBF meets industry standards.

7.What is the process for return or replacement of IRFB4310GPBF?

All IRFB4310GPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFB4310GPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFB4310GPBF part is unused and in its original packaging.

Return procedure for IRFB4310GPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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