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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFB4310ZGPBF

Name: IRFB4310ZGPBF
Brand: Infineon Technologies
SKU: IRFB4310ZGPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFB4310ZGPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IRFB4310ZGPBF.pdf

Description:: MOSFET N-CH 100V 120A TO220AB

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRFB4310ZGPBF from Infineon Technologies (formerly International Rectifier) is a 100V, 4.8 mΩ typ., 120A (package-limited) N-channel enhancement-mode HEXFET® Power MOSFET in TO-220AB package, optimized for high-frequency hard-switched SMPS and synchronous rectification. It features enhanced body diode dV/dt and dI/dt capability, 120 nC total gate charge, and 300 mJ single-pulse avalanche energy - deployed in UPS output stages and telecom DC/DC converters.

For engineers reviewing the IRFB4310ZGPBF datasheet, IRFB4310ZGPBF pinout, IRFB4310ZGPBF application, or IRFB4310ZGPBF equivalent, key selection criteria include R_DS(on) at 10 V, Q_g/Q_gd ratio for switching loss trade-offs, SOA under unclamped inductive switching, body diode reverse recovery (t_rr = 40 ns), and thermal resistance R_θJC = 0.6 °C/W.

Technical Context

This MOSFET employs planar silicon-gate technology with optimized cell pitch and trench-assisted drift region to achieve low R_DS(on) × Q_g figure-of-merit (FoM) of ~576 Ω·nC. Its body diode is fully characterized for fast recovery (Q_rr = 58 nC, I_RRM = 2.5 A) and robust dV/dt immunity (>1.7 V/ns) under zero-voltage turn-off conditions.

The device operates with gate threshold voltage V_GS(th) = 2.0–4.0 V and exhibits positive temperature coefficient for R_DS(on), enabling stable parallel operation. Avalanche ruggedness is validated per JEDEC JESD24-11 up to E_AS = 300 mJ (T_J = 25°C, L = 0.047 mH, I_AS = 75 A).

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	100 V - Maximum drain-source blocking voltage before avalanche onset; supports 65 V bus designs with 1.5× safety margin.
R_DS(on) typ.	4.8 mΩ @ V_GS = 10 V, T_J = 25°C - Enables <1.5 W conduction loss at 120 A, critical for high-current synchronous rectifiers.
Q_g	120 nC max - Determines gate drive power requirement; requires ≥2 A peak driver for 100 ns switching transitions.
t_rr	40 ns @ T_J = 25°C - Limits reverse recovery losses in synchronous buck topologies operating >300 kHz.
R_θJC	0.6 °C/W - Enables 120 W dissipation with ≤72°C case-to-junction rise; mandates mechanical mounting with ≤0.5 °C/W case-to-sink interface.
E_AS	300 mJ - Supports single-event unclamped inductive switching (UIS) without failure at I_AS = 75 A, essential for UPS short-circuit protection.
I_D (pkg)	120 A @ T_C = 25°C - Package-limited current defined by leadframe thermal and bond-wire current capacity, not silicon limit.

Pinout & Package

IRFB4310ZGPBF uses the standard TO-220AB package with isolated tab (drain-connected), 3-pin through-hole configuration. Mounting torque: 10 lb·in (1.1 N·m); soldering temperature: 260°C for 10 s at 1.6 mm from case.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current path from source to load return	Electrically connected to metal tab; requires insulating washer if mounted to grounded heatsink.
Source	Reference node for gate drive and current sensing	Low-inductance connection point for Kelvin source routing in high-di/dt applications.
Gate	Control terminal modulating channel conductivity	High-impedance input requiring RC snubber (R_G = 2.7 Ω typical) to suppress oscillation during hard switching.

Key Features

Feature	Design Value
Enhanced body diode dV/dt rating	Rated >1.7 V/ns - Prevents spurious turn-on during high dv/dt commutation in bridge-leg configurations.
Characterized avalanche SOA	Validated E_AS = 300 mJ, I_AS = 75 A - Enables reliable operation in UPS and motor drive fault conditions without external clamping.
Low C_oss eff. (TR)	920 pF - Reduces turn-off energy loss (E_off ∝ V_DS² × C_oss) in 500 kHz+ resonant converters.
Lead-free & halogen-free	Meets IPC/JEDEC J-STD-609 Class 1A - Compliant with RoHS 2011/65/EU and ELV Directive 2000/53/EC for automotive-grade supply chains.
Thermally robust construction	R_θJC = 0.6 °C/W + R_θCS = 0.5 °C/W - Supports 120 W continuous dissipation with ≤120°C junction rise on standard greased heatsink.

Applications

UPS Output Stage

Telecom DC/DC Converter

Use Scenario: High-efficiency 48 V to 12 V step-down conversion in online double-conversion UPS systems with active PFC front-end.

IC Role / Device Role / Timing Role: Synchronous rectifier switch in secondary-side LLC resonant converter, operating at 300–500 kHz with ZVS.

Use Value: 4.8 mΩ R_DS(on) reduces conduction loss by 35% vs. legacy 7.5 mΩ devices, improving full-load efficiency from 92.1% to 93.4%.

Use Scenario: Isolated 54 V input telecom rectifier supplying 12 V/100 A to server backplane.

IC Role / Device Role / Timing Role: Primary-side hard-switched MOSFET in phase-shifted full-bridge topology with 100 kHz switching frequency.

Use Value: 120 nC Q_g enables gate drive with low-cost 2 A peak drivers; 300 mJ E_AS eliminates need for external RCD clamp during overload events.

Industrial Motor Drive Inverter

EV Onboard Charger (OBC) PFC Stage

Use Scenario: 3 kW servo drive inverter stage controlling 3-phase BLDC motor with field-oriented control.

IC Role / Device Role / Timing Role: Low-side switch in 3-phase IGBT/MOSFET hybrid inverter, handling 120 A peak phase current.

Use Value: 120 A package rating and 0.6 °C/W R_θJC allow direct heatsink mounting without derating at 40°C ambient, reducing thermal interface layers.

Use Scenario: Boost PFC switch in 6.6 kW bidirectional OBC for Level 2 EV charging.

IC Role / Device Role / Timing Role: Fast-switching boost switch operating in CCM at 65 kHz with 400 V DC-link.

Use Value: 40 ns t_rr and 58 nC Q_rr minimize body diode conduction loss during zero-voltage switching transitions, cutting PFC losses by 1.8 W.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current, 100 V power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP120N10F7	R_DS(on) = 5.2 mΩ, Q_g = 105 nC, E_AS = 220 mJ, TO-220FP package (non-isolated tab)	Lacks isolated drain tab; requires insulated mounting hardware; lower avalanche energy limits use in UPS fault modes.	Prefer when cost sensitivity outweighs avalanche robustness and thermal interface simplicity.
IXFH120N10L2	R_DS(on) = 4.5 mΩ, Q_g = 135 nC, E_AS = 350 mJ, TO-247AC package (higher R_θJC = 0.45 °C/W but larger footprint)	Superior R_DS(on) and avalanche rating, but TO-247 requires PCB redesign; higher Q_g increases gate drive loss.	Choose for new designs needing maximum efficiency and ruggedness where board space permits TO-247 layout.

Compared with STP120N10F7, IRFB4310ZGPBF offers 17% higher avalanche energy and isolated tab for simplified thermal design; versus IXFH120N10L2, it trades 0.3 mΩ lower R_DS(on) for 15 nC lower Q_g and TO-220 compatibility - making it optimal for cost-constrained, high-volume SMPS upgrades.

Availability

IRFB4310ZGPBF is available at Aetrix Electronics and suitable for uninterruptible power supplies, telecom DC/DC converters, and industrial motor drives requiring stable component supply across multi-year production cycles.

Supply support for IRFB4310ZGPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions, with global R&D and manufacturing infrastructure.

This device belongs to Infineon's HEXFET® Power MOSFET product line, engineered specifically for high-efficiency, high-reliability power conversion in industrial, telecom, and renewable energy systems where thermal stability and avalanche tolerance are critical.

FAQ

Is IRFB4310ZGPBF suitable for paralleling in high-current applications?

Yes - its positive R_DS(on) temperature coefficient ensures current sharing stability across parallel devices. Measured R_DS(on) increases by ~0.11%/°C above 25°C, preventing thermal runaway. For optimal balance, match V_GS(th) within ±0.2 V and use symmetrical gate drive paths with individual 2.7 Ω series resistors.

What is the maximum recommended gate drive voltage?

The absolute maximum V_GS is ±20 V, but operation above 15 V yields diminishing R_DS(on) improvement while increasing gate oxide stress. Recommended drive is 10–12 V for optimal conduction/switching loss trade-off; gate drive must be referenced to source, not ground, due to common-source layout.

Does IRFB4310ZGPBF require a gate resistor for EMI suppression?

Yes - a 2.7 Ω non-inductive resistor in series with the gate is specified in the datasheet for switching waveform control. This value damps ringing caused by gate-drain capacitance (C_rss = 220 pF) interacting with PCB trace inductance, reducing radiated EMI in 30–100 MHz bands without compromising 55 ns t_d(off).

Can IRFB4310ZGPBF replace older IRFB4310PbF in existing designs?

Yes - IRFB4310ZGPBF is the lead-free, halogen-free qualified successor to IRFB4310PbF, with identical pinout, R_DS(on), SOA, and thermal characteristics. No layout or firmware changes are required; reflow profile must comply with J-STD-020 moisture sensitivity level 1 (MSL-1) for Pb-free processing.

IRFB4310ZGPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 120A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 6mOhm @ 75A, 10V

Vgs(th) (Max) @ Id:: 4V @ 150µA

Gate Charge (Qg) (Max) @ Vgs:: 170 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 6860 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 250W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

IRFB4310ZGPBF FAQ

1.How can I place an order for IRFB4310ZGPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFB4310ZGPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFB4310ZGPBF reliable?

The price and inventory of IRFB4310ZGPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFB4310ZGPBF is usually 5 days.

3.What payment methods are accepted for IRFB4310ZGPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFB4310ZGPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFB4310ZGPBF?

IRFB4310ZGPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFB4310ZGPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFB4310ZGPBF?

For technical support, including IRFB4310ZGPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFB4310ZGPBF requirements.

6.How does Aetrix verify that IRFB4310ZGPBF is sourced from the original manufacturer or authorized distributors?

All IRFB4310ZGPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFB4310ZGPBF meets industry standards.

7.What is the process for return or replacement of IRFB4310ZGPBF?

All IRFB4310ZGPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFB4310ZGPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFB4310ZGPBF part is unused and in its original packaging.

Return procedure for IRFB4310ZGPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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