Infineon Technologies IRFB4321GPBF

Overview

IRFB4321GPBF from Infineon Technologies (formerly International Rectifier) is an N-channel enhancement-mode HEXFET Power MOSFET in TO-220AB package, rated for 150 V V_DSS, 12 mΩ typical R_DS(on) at V_GS = 10 V, and 83 A continuous drain current at T_C = 25°C. It delivers low conduction loss and fast switching in hard-switched DC-DC converters, synchronous rectifiers, and UPS inverters.

For engineers reviewing the IRFB4321GPBF datasheet, IRFB4321GPBF pinout, IRFB4321GPBF application, or IRFB4321GPBF equivalent, key selection criteria include its 71 nC total gate charge, 89–130 ns reverse recovery time, fully characterized avalanche SOA, 0.45 °C/W junction-to-case thermal resistance, and lead-free/halogen-free compliance.

Technical Context

This MOSFET employs planar silicon process with optimized cell pitch and trench-assisted body diode design to achieve low R_DS(on) while maintaining robust unclamped inductive switching capability. Its gate threshold voltage (3.0–5.0 V) ensures reliable turn-on with standard 10 V gate drivers and stable operation across –55°C to +175°C junction temperature range.

The device integrates a fast, low-Q_rr intrinsic body diode (Q_rr = 300–450 nC, t_rr = 89–130 ns at I_F = 50 A), enabling high-frequency synchronous rectification without external Schottky diodes. Its C_iss/C_oss/C_rss values (4460 pF / 390 pF / 82 pF at V_DS = 25 V) support predictable snubberless hard-switching up to several hundred kHz.

Key Specifications

Pinout & Package

IRFB4321GPBF uses the industry-standard TO-220AB package with isolated tab (drain-connected), featuring three leads: Gate (G), Drain (D), and Source (S). The package provides mechanical robustness, low thermal resistance, and compatibility with standard through-hole PCB mounting and heatsink clamping.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 150 V power MOSFET applications.

Compared with STP110N15F7 and IXTH86N15L2, IRFB4321GPBF offers the best balance of low R_DS(on), moderate Q_g, and industry-leading E_AS, making it optimal for rugged, medium-to-high-frequency industrial power stages where reliability under transient stress is non-negotiable.

Availability

IRFB4321GPBF is available at Aetrix Electronics and suitable for motion control drives, uninterruptible power supplies, and high-efficiency synchronous rectification requiring stable component supply and long-term industrial lifecycle support.

Supply support for IRFB4321GPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

This device belongs to Infineon's HEXFET® Power MOSFET product line, engineered for high-reliability industrial power conversion where low conduction loss, fast switching, and robust avalanche performance are essential.

FAQ

Is IRFB4321GPBF suitable for surface-mount assembly?

No. The TO-220AB package is explicitly not recommended for surface-mount applications due to mechanical stress and thermal expansion mismatch. It requires through-hole mounting with mechanical screw-down to a heatsink. Surface-mount alternatives such as D2PAK (TO-263) variants must be selected separately if SMT is required.

What is the maximum allowable gate voltage for reliable operation?

The absolute maximum gate-to-source voltage is ±30 V. Operation above ±20 V risks permanent gate oxide damage. For robust 10 V gate drive, use a clamped driver with Zener protection at 12–15 V to prevent overshoot during fast switching transitions in high-dV/dt environments.

How does the body diode performance compare to external Schottky diodes?

At 50 A and 125°C, its V_SD is ≤1.3 V and Q_rr is 300–450 nC - comparable to 45 V Schottky diodes but with superior thermal stability and no reverse leakage increase with temperature. It eliminates need for external diodes in synchronous rectifiers up to ~200 kHz, reducing BOM count and layout area.

Can IRFB4321GPBF replace older IRFB4310 or IRFP4310 in existing designs?

Yes - it is a direct drop-in replacement with identical TO-220AB footprint, pinout, and voltage rating. R_DS(on) is reduced from 14.5 mΩ (IRFB4310) to 12 mΩ, improving efficiency by ~17% at full load, while maintaining compatible gate drive requirements and thermal profile under proper heatsinking.