Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFB4410

Name: IRFB4410
Brand: Infineon Technologies
SKU: IRFB4410
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: IRFB4410

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IRFB4410.pdf

Description:: MOSFET N-CH 100V 96A TO220AB

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:6,448

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

IRFB4410 from Infineon Technologies (formerly International Rectifier) is a 100V, 88A N-channel enhancement-mode HEXFET Power MOSFET in TO-262 (I²PAK) package, optimized for high-frequency hard-switched and synchronous rectification applications. It features 8.0 mΩ typical R_DS(on), 120 nC total gate charge, 380 mJ single-pulse avalanche energy, and enhanced body diode dV/dt and dI/dt capability-enabling robust operation in UPS and SMPS secondary-side switching.

For engineers reviewing the IRFB4410 datasheet, IRFB4410 pinout, IRFB4410 application, or IRFB4410 equivalent, key selection criteria include its 100V V_(BR)DSS, 8.0 mΩ R_DS(on) at V_GS = 10V, 38 ns typical reverse recovery time, 0.61°C/W R_θJC, and TO-262 thermal performance under high-current pulsed loads.

Technical Context

This MOSFET employs planar silicon process with optimized cell layout to achieve low R_DS(on) while maintaining rugged unclamped inductive switching (UIS) capability. Its body diode exhibits 1.3 V forward voltage at 58 A and 38–56 ns trr across temperature, supporting fast-recovery requirements in synchronous buck converters.

The device's dynamic parameters-including 44 nC Q_gd, 5150 pF C_iss, and 500 pF C_oss(TR)-are fully characterized for hard-switching design at >100 kHz. Thermal resistance R_θJC = 0.61°C/W (typ.) enables 88 A continuous conduction at T_C = 25°C with proper heatsinking.

Key Specifications

Parameter	Value and Actual Design Meaning
V_(BR)DSS	100 V - Maximum blocking voltage before avalanche onset; supports 65 V bus designs with 1.5× safety margin.
R_DS(on) (typ.)	8.0 mΩ @ V_GS = 10 V - Enables <1 W conduction loss at 40 A DC, critical for high-efficiency SMPS output stages.
I_D (cont.)	88 A @ T_C = 25°C - Package-limited current; derates to 63 A at T_C = 100°C per linear derating factor of 0.63 W/°C.
Q_g	120 nC (max.) - Determines gate driver power requirement; 120 nC at 10 V implies ~1.2 µC needed for full turn-on with 10 V swing.
E_AS	300 mJ (single pulse) - Specifies maximum unclamped inductive energy survivability; validated at I_AS = 58 A, L = 0.14 mH.
trr	38 ns (typ., T_J = 25°C) - Fast body diode recovery reduces switching losses and EMI in synchronous rectifiers.
R_θJC	0.61°C/W (typ.) - Junction-to-case thermal resistance defines minimum heatsink requirement for 88 A continuous operation.

Pinout & Package

IRFB4410 is housed in a TO-262 (I²PAK) surface-mount-compatible package with isolated drain tab, rated for 10 lb·in mounting torque. The package provides low-inductance source connection and direct thermal path from die to case.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current-carrying terminal, electrically connected to package backside	Must be electrically isolated from heatsink unless referenced to system ground; primary thermal path to heatsink.
Source	Reference node for gate drive and current return path	Low-inductance connection critical for minimizing switching oscillation; ties directly to PCB ground plane.
Gate	Control electrode for channel formation	High-impedance input requiring <200 nA leakage control; sensitive to ESD and ringing-requires RC snubber if driven remotely.

Key Features

Feature	Design Value
Enhanced avalanche ruggedness	300 mJ single-pulse E_AS with validated thermal failure model-supports reliable operation in unclamped inductive switching.
Optimized body diode dV/dt immunity	Rated for >1.3 V/ns diode recovery dv/dt-prevents spurious turn-on during high-speed commutation in synchronous rectifiers.
Low Crss / Qgd ratio	190 pF Crss and 44 nC Q_gd yield stable Miller plateau behavior-reduces risk of shoot-through in half-bridge configurations.
Lead-free and RoHS-compliant	Pb-free plating and halogen-free molding compound-meets IPC-J-STD-020 moisture sensitivity level 1 (MSL1) for reflow compatibility.
Characterized Coss eff. (ER)	420 pF effective output capacitance (energy-related)-enables accurate calculation of turn-off energy loss in hard-switched topologies.

Applications

UPS Output Stage

Synchronous Buck Converter

Use Scenario: High-current 12–48 V DC output stage in line-interactive and online uninterruptible power supplies.

IC Role / Device Role / Timing Role: Primary power switch in low-side synchronous rectifier configuration, operating at 20–100 kHz with 50–100% duty cycle.

Use Value: 8.0 mΩ R_DS(on) reduces conduction loss by >35% vs. comparable 12 mΩ MOSFETs, extending battery runtime at 88 A load.

Use Scenario: Secondary-side switch in isolated DC-DC modules for server VRMs and telecom power supplies.

IC Role / Device Role / Timing Role: Synchronous rectifier replacing Schottky diode in 12 V → 1.2 V buck converter, switching at 300–500 kHz.

Use Value: 38 ns trr and 1.3 V V_SD minimize reverse recovery loss and forward conduction drop, improving efficiency by 1.2–1.8% at full load.

Motor Drive Half-Bridge

Industrial SMPS PFC Switch

Use Scenario: Low-side switch in 100 V class BLDC motor inverters for HVAC blowers and industrial pumps.

IC Role / Device Role / Timing Role: Hard-switched N-channel switch in 3-phase inverter leg, handling 50–80 A peak phase current with 10–20 kHz PWM.

Use Value: 380 mJ E_AS and 650 A/µs dI/dt rating ensure robustness against inductive kickback during rapid deceleration events.

Use Scenario: Boost switch in active PFC front-end of industrial AC-DC power supplies (2–5 kW range).

IC Role / Device Role / Timing Role: High-voltage, high-current switch operating at 65–100 kHz with 0.3–0.5 duty cycle in continuous conduction mode.

Use Value: 100 V V_(BR)DSS accommodates 400 V DC bus + 20% surge; 0.61°C/W R_θJC allows 88 A conduction without forced air cooling.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current 100 V power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP110N10F7	100 V, 110 A, 6.5 mΩ R_DS(on), 140 nC Q_g, TO-220 package	Higher current rating but larger R_θJA (62°C/W vs. 40°C/W for IRFB4410 on PCB); less suitable for compact SMT layouts	Prefer when board space permits TO-220 and higher peak current (>100 A) is required; avoid where thermal cycling reliability is critical.
IXTH88N10L2	100 V, 88 A, 9.5 mΩ R_DS(on), 105 nC Q_g, TO-247 package	Higher R_DS(on) increases conduction loss; TO-247 offers superior R_θJC (0.45°C/W) but requires larger footprint and screw mounting	Choose when ultimate thermal performance justifies mechanical complexity and cost premium; not drop-in for TO-262 footprints.

Compared with STP110N10F7 and IXTH88N10L2, IRFB4410 delivers optimal balance of low R_DS(on), moderate Q_g, and TO-262 manufacturability-making it preferred for high-volume, thermally constrained SMT power stages where 88 A continuous current suffices.

Availability

IRFB4410 is available at Aetrix Electronics and suitable for uninterruptible power supplies, synchronous buck converters, motor drive inverters, and industrial SMPS requiring stable component supply with long-term lifecycle support.

Supply support for IRFB4410 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, automotive, and industrial control ICs and discrete devices, headquartered in Munich, Germany.

IRFB4410 belongs to the HEXFET® Power MOSFET product line, engineered for high-efficiency, high-reliability power conversion in hard-switched and synchronous rectification topologies up to 500 kHz.

FAQ

Is IRFB4410 suitable for surface-mount assembly?

Yes-IRFB4410 uses the TO-262 (I²PAK) package, which is explicitly designed for surface-mount reflow soldering. Its leadframe geometry and thermal pad support standard PCB land patterns per IR application note AN-994, and it meets MSL1 per J-STD-020. Manual soldering is not recommended due to thermal mass.

What is the maximum safe operating frequency for IRFB4410 in hard-switched circuits?

IRFB4410 supports hard-switched operation up to 500 kHz, validated by its 24 ns t_d(on), 55 ns t_d(off), and 5150 pF C_iss. At 300 kHz, total switching loss remains below 2.5 W with 10 V gate drive and 50 A load-provided gate resistor is optimized to limit dV/dt to <5 V/ns and suppress ringing.

Does IRFB4410 require a gate driver with negative turn-off capability?

No-IRFB4410 has a gate threshold voltage (V_GS(th)) of 2.0–4.0 V and does not require negative bias for reliable turn-off. However, a gate driver capable of sinking ≥2 A peak current is recommended to achieve 24 ns t_d(on) and 55 ns t_d(off) with minimal overshoot, especially in half-bridge configurations.

How does IRFB4410's body diode performance compare to Schottky alternatives in synchronous rectification?

IRFB4410's body diode has 1.3 V V_SD at 58 A and 38 ns trr-higher forward drop than Schottky diodes but far superior reverse recovery behavior. In 100 kHz+ synchronous buck converters, its lower Q_rr (61–92 nC) and controlled dI/dt reduce EMI and cross-conduction loss versus fast recovery diodes, despite higher V_F.

IRFB4410 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 96A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 10mOhm @ 58A, 10V

Vgs(th) (Max) @ Id:: 4V @ 150µA

Gate Charge (Qg) (Max) @ Vgs:: 180 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 5150 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 250W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

IRFB4410 FAQ

1.How can I place an order for IRFB4410 through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFB4410 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFB4410 reliable?

The price and inventory of IRFB4410 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFB4410 is usually 5 days.

3.What payment methods are accepted for IRFB4410?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFB4410 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFB4410?

IRFB4410 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFB4410 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFB4410?

For technical support, including IRFB4410 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFB4410 requirements.

6.How does Aetrix verify that IRFB4410 is sourced from the original manufacturer or authorized distributors?

All IRFB4410 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFB4410 meets industry standards.

7.What is the process for return or replacement of IRFB4410?

All IRFB4410 units undergo pre-shipment inspection (PSI). If there is an issue with IRFB4410, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFB4410 part is unused and in its original packaging.

Return procedure for IRFB4410:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

2026-07-17 Raspberry Pi Alternatives: Chip-Level Comparison, Compatibility and Replacement Guide

Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…

2026-07-13 How to Test Dynamic Load Response in Low-Voltage High-Current Buck Converters

Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…

2026-07-08 Output Capacitor Selection for High-Current ASIC Vcore Rails

Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…

2026-07-07 High-Current ASIC Core Power Supply Design: 12-Phase Buck, PMBus and Dynamic Load Response

Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …

2026-07-06 Voltage Regulator: Types, Circuits, Testing and Selection Guide

Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.

2026-06-30 Amplifiers Explained: Types, Circuits, Gain, Classes and Applications

Amplifier guide covering voltage, current and power amplification, gain, feedback, amplifier classes, audio and RF applications, op-amp circuits, transimpedance amplifiers, datasheet selection and trou…