Infineon Technologies IRFB4410ZGPBF

Overview

IRFB4410ZGPBF from Infineon Technologies (formerly International Rectifier) is a 100V, 97A N-channel enhancement-mode HEXFET® Power MOSFET in TO-220AB package, optimized for high-frequency hard-switched SMPS and synchronous rectification. It features 7.2 mΩ typical R_DS(on), 83 nC total gate charge, 340 pF output capacitance, and enhanced body diode dV/dt and dI/dt capability for robust unclamped inductive switching.

For engineers reviewing the IRFB4410ZGPBF datasheet, IRFB4410ZGPBF pinout, IRFB4410ZGPBF application, or IRFB4410ZGPBF equivalent, key selection criteria include its 100V V_DSS, low 0.65°C/W R_θJC, 390A pulsed drain current, 58A avalanche current rating, and 38–57 ns reverse recovery time-critical for high-efficiency UPS and telecom power stages.

Technical Context

This MOSFET employs planar silicon-gate technology with optimized cell layout to achieve low R_DS(on) while maintaining strong avalanche ruggedness (E_AS = 230 mJ at T_J = 25°C). Its gate threshold voltage (2.0–4.0 V) and 0.7 Ω internal gate resistance support stable drive under high dv/dt conditions up to 1.5 V/ns.

The device integrates a fast, low-Q_rr (53–80 nC) intrinsic body diode with trr of 38–57 ns and V_SD ≤ 1.3 V, enabling efficient synchronous rectification without external Schottky diodes. Dynamic parameters-including C_iss = 4820 pF, C_oss(ER) = 420 pF, and Q_gd = 27 nC-are fully characterized per JEDEC standards for accurate loss modeling in 100–500 kHz converters.

Key Specifications

Pinout & Package

IRFB4410ZGPBF uses the industry-standard TO-220AB package with isolated tab (drain-connected), featuring three leads: Gate (G), Drain (D), and Source (S). The metal tab is electrically connected to the drain terminal and must be insulated from heatsink unless drain is at ground potential.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current, 100V power switching applications.

Compared with STP110N10F7 and IXTH110N10L2, IRFB4410ZGPBF delivers balanced trade-offs: best-in-class avalanche energy for industrial reliability, RoHS/halogen-free compliance for global markets, and TO-220AB compatibility with legacy thermal designs-making it optimal for cost-sensitive, high-ruggedness 100 V power stages.

Availability

IRFB4410ZGPBF is available at Aetrix Electronics and suitable for high-efficiency synchronous rectification in SMPS, uninterruptible power supply inverters, and hard-switched industrial motor drives requiring stable component supply across multi-year production cycles.

Supply support for IRFB4410ZGPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor leader specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certifications including IATF 16949 and ISO 9001.

IRFB4410ZGPBF belongs to Infineon's HEXFET® Power MOSFET product line, engineered specifically for high-frequency, high-ruggedness power conversion in industrial and telecom infrastructure where reliability under transient stress is non-negotiable.

FAQ

What is the maximum recommended gate drive voltage for IRFB4410ZGPBF?

The absolute maximum V_GS is ±20 V, but the device is characterized and optimized for 10 V drive. Operating above 12 V yields diminishing R_DS(on) improvement while increasing gate oxide stress and risk of overdrive-induced instability. For robust operation across temperature, 10 V ±0.5 V is the design target per Infineon's application notes AN-1001 and AN-1040.

Can IRFB4410ZGPBF be used in parallel configurations?

Yes-its positive R_DS(on) temperature coefficient (0.12 V/°C) enables natural current sharing. Parallel operation requires matched gate drive impedance (<5% variation), symmetrical PCB layout, and individual source resistors (0.01 Ω) for current sensing and stability. Thermal coupling between devices must be minimized to avoid thermal runaway.

Does IRFB4410ZGPBF require a gate resistor for EMI suppression?

A gate resistor (typically 2.7–10 Ω) is mandatory to dampen parasitic oscillation caused by L_g–C_iss resonance and limit peak dI/dt during turn-on. Without it, ringing exceeds 100 MHz and induces radiated emissions that fail CISPR 22 Class B. The 0.7 Ω internal R_G is insufficient for board-level layout parasitics.

Is the TO-220AB package thermally compatible with standard clip-mount heatsinks?

Yes-the TO-220AB package has standardized mechanical dimensions (JEDEC TO-220AB outline) and a flat, isolated metal tab designed for direct mounting to clip-type heatsinks using M3 screws. Thermal interface material (e.g., 0.1 mm silicone pad, κ = 1.5 W/m·K) is required; mounting torque must not exceed 1.1 N·m to avoid package cracking.