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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFB4510GPBF

Name: IRFB4510GPBF
Brand: Infineon Technologies
SKU: IRFB4510GPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFB4510GPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IRFB4510GPBF.pdf

Description:: MOSFET N CH 100V 62A TO-220AB

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRFB4510GPBF from Infineon Technologies (formerly International Rectifier) is a 100 V, 62 A N-channel enhancement-mode HEXFET® Power MOSFET in TO-220AB package, optimized for high-frequency hard-switched SMPS and synchronous rectification with R_DS(on) = 10.7 mΩ (typ), Q_g = 58 nC (typ), and enhanced body diode dV/dt/dI/dt capability. It delivers stable performance in UPS and telecom power stages where avalanche ruggedness and fast recovery are critical.

For engineers reviewing the IRFB4510GPBF datasheet, IRFB4510GPBF pinout, IRFB4510GPBF application, or IRFB4510GPBF equivalent, key selection criteria include its 300 mJ single-pulse avalanche energy rating, 54 ns typical reverse recovery time (trr), 1.3 V body diode forward voltage (V_SD), and thermal resistance R_θJC = 1.05 °C/W - all validated under industrial temperature range (–55 °C to +175 °C).

Technical Context

This MOSFET employs planar silicon-gate technology with optimized cell layout to achieve low gate charge (Q_gd = 18 nC, Q_gs = 14 nC) and reduced Miller effect, enabling clean switching in >200 kHz DC-DC converters. Its fully characterized SOA includes unclamped inductive switching limits up to I_AS = 37 A at T_J = 25 °C.

The integrated body diode features improved dI/dt immunity (≤1550 A/μs) and controlled reverse recovery (Q_rr = 95–140 nC), making it suitable for synchronous rectification without external Schottky replacement in 48 V input telecom PSUs and server VRMs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	100 V - Maximum blocking voltage before avalanche; supports 65 V bus designs with 1.3× safety margin per AN-1005.
R_DS(on) (typ)	10.7 mΩ @ V_GS = 10 V, T_J = 25 °C - Enables <1.5 W conduction loss at 62 A continuous drain current.
Q_g (typ)	58 nC - Low total gate charge reduces driver power demand and enables efficient operation with 2.7 Ω gate resistor.
trr (typ)	54 ns @ T_J = 25 °C, I_F = 37 A - Fast body diode recovery minimizes shoot-through risk in synchronous buck topologies.
E_AS	300 mJ - Single-pulse avalanche energy rating ensures robustness during transient overvoltage events in hard-switched circuits.
R_θJC	1.05 °C/W - Junction-to-case thermal resistance allows direct heatsink mounting with predictable thermal rise under 62 A load.

Pinout & Package

TO-220AB package with isolated tab (drain-connected), standard 3-pin through-hole configuration. Mounting torque: 10 lb·in (1.1 N·m); soldering temperature limit: 260 °C for 10 seconds at 1.6 mm from case.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current path output / heat sink interface	Electrically connected to metal tab; requires insulating washer if mounted to grounded heatsink.
Source	Reference node for gate drive and current return	Low-inductance source connection essential for minimizing common-source inductance in high-dI/dt switching.
Gate	Control terminal for channel modulation	High-impedance input requiring <100 nA leakage control; sensitive to ESD (±20 V max V_GS).

Key Features

Feature	Design Value
Enhanced avalanche ruggedness	Rated for 300 mJ single-pulse avalanche energy with validated thermal failure model per AN-1005.
Optimized body diode dV/dt immunity	Specified for dv/dt ≤ 0.95 V/ns during diode recovery, reducing false turn-on in high-side configurations.
Lead-free and halogen-free construction	Meets RoHS Directive 2011/65/EU and JEDEC J-STD-020 reflow profile; "P" and "G" suffixes confirmed.
Full SOA characterization	Safe operating area defined for DC, pulsed, and unclamped inductive conditions up to T_J = 175 °C.

Applications

Telecom AC-DC Front-End Rectification

Server VRM Synchronous Rectifier

Use Scenario: High-efficiency 3.3 V/50 A output stage in 48 V input server power supply using multiphase buck converter.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diode; switched at 300–500 kHz with precise gate timing relative to high-side FET.

Use Value: Reduces conduction loss by 40% vs. 40 V Schottky, enabling >95% efficiency at full load while maintaining trr < 60 ns for zero-voltage switching compatibility.

Use Scenario: Secondary-side rectification in telecom rectifier module handling 54 V nominal input with 20% line surge.

IC Role / Device Role / Timing Role: Primary switch in active clamp forward topology; subjected to repetitive unclamped inductive stress during reset phase.

Use Value: Withstands 100 V breakdown and 300 mJ avalanche energy per pulse, eliminating need for external snubbers in 200 kHz designs.

Uninterruptible Power Supply (UPS) Inverter Stage

Industrial Motor Drive Half-Bridge

Use Scenario: 1 kVA online UPS inverter bridge driving transformer-coupled output with PWM frequency of 16–20 kHz.

IC Role / Device Role / Timing Role: High-current switching device in H-bridge leg; conducts 62 A RMS with peak surge up to 250 A (body diode).

Use Value: Body diode rated for I_SM = 250 A and V_SD ≤ 1.3 V ensures low-loss freewheeling during dead-time, reducing thermal stress on heatsink.

Use Scenario: 3-phase inverter for 7.5 kW HVAC compressor with field-oriented control at 8 kHz carrier frequency.

IC Role / Device Role / Timing Role: Low-side switch in half-bridge module; subject to high dI/dt (>1000 A/μs) during PWM edge transitions.

Use Value: Validated dI/dt capability of 1550 A/μs prevents parasitic turn-on, ensuring reliable commutation without gate resistors exceeding 10 Ω.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current 100 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP62NS10FP	R_DS(on) = 12.5 mΩ (max), Q_g = 75 nC, no published E_AS rating	Lacks full avalanche SOA documentation; not qualified for repetitive unclamped inductive switching	Preferable only when gate drive strength exceeds 2 A and avalanche stress is absent.
IXTH62N10L2	R_DS(on) = 11.5 mΩ (typ), Q_g = 65 nC, E_AS = 220 mJ (lower energy margin)	Lower thermal resistance (R_θJC = 0.85 °C/W) but reduced avalanche robustness	Choose when heatsink space is constrained but system-level overvoltage protection is present.

Compared with STP62NS10FP and IXTH62N10L2, IRFB4510GPBF provides the highest verified avalanche energy margin (300 mJ) and lowest Q_gd/Q_g ratio (31%), delivering superior hard-switching reliability and reduced Miller-induced oscillation risk in compact, high-power-density designs.

Availability

IRFB4510GPBF is available at Aetrix Electronics and suitable for telecom AC-DC rectification, server VRM synchronous rectification, and UPS inverter stages requiring stable component supply across extended production lifecycles.

Supply support for IRFB4510GPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global R&D and manufacturing infrastructure.

This device belongs to the HEXFET® Power MOSFET product line, engineered specifically for high-efficiency, high-reliability power conversion in industrial and telecom infrastructure where ruggedness, thermal stability, and repeatable avalanche behavior are mandatory.

FAQ

What is the maximum allowable gate-to-source voltage for IRFB4510GPBF?

The absolute maximum V_GS rating is ±20 V, with recommended operating range of –10 V to +15 V. Exceeding ±20 V risks permanent gate oxide damage. Gate drive circuits must include clamping (e.g., Zener diodes) to prevent overshoot during fast switching, especially in high-dV/dt environments like hard-switched PFC stages.

Can IRFB4510GPBF be used in surface-mount designs?

No - the TO-220AB package is explicitly not recommended for surface-mount applications per datasheet note. Its leadframe geometry and thermal mass require through-hole mounting with mechanical screw attachment (10 lb·in torque) to ensure reliable thermal transfer and mechanical stability under thermal cycling.

How does the body diode performance compare to discrete Schottky diodes?

At 37 A and 25 °C, V_SD = 1.3 V and trr = 54 ns - higher forward drop than 45 V Schottky (0.55 V), but significantly faster recovery than standard PN diodes. It eliminates need for external diodes in synchronous rectifiers where moderate V_F is acceptable and fast trr prevents cross-conduction losses.

Is IRFB4510GPBF suitable for automotive applications?

No - this part is qualified only for industrial market standards per datasheet. It lacks AEC-Q101 qualification, automotive-grade screening, or guaranteed operation beyond +125 °C ambient. For automotive 12 V/48 V systems, Infineon's OptiMOS™ series (e.g., BSC014N04LS) is recommended instead.

IRFB4510GPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 62A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 13.5mOhm @ 37A, 10V

Vgs(th) (Max) @ Id:: 4V @ 100µA

Gate Charge (Qg) (Max) @ Vgs:: 87 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3180 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 140W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

IRFB4510GPBF FAQ

1.How can I place an order for IRFB4510GPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFB4510GPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFB4510GPBF reliable?

The price and inventory of IRFB4510GPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFB4510GPBF is usually 5 days.

3.What payment methods are accepted for IRFB4510GPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFB4510GPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFB4510GPBF?

IRFB4510GPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFB4510GPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFB4510GPBF?

For technical support, including IRFB4510GPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFB4510GPBF requirements.

6.How does Aetrix verify that IRFB4510GPBF is sourced from the original manufacturer or authorized distributors?

All IRFB4510GPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFB4510GPBF meets industry standards.

7.What is the process for return or replacement of IRFB4510GPBF?

All IRFB4510GPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFB4510GPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFB4510GPBF part is unused and in its original packaging.

Return procedure for IRFB4510GPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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