Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFB4610

Name: IRFB4610
Brand: Infineon Technologies
SKU: IRFB4610
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: IRFB4610

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IRFB4610.pdf

Description:: MOSFET N-CH 100V 73A TO220AB

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:5,916

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

IRFB4610 from Infineon (formerly International Rectifier) is a 100V, 73A N-channel enhancement-mode HEXFET Power MOSFET in TO-262 (I²PAK) package, optimized for high-frequency hard-switching and synchronous rectification. It features 11 mΩ typical R_DS(on), 90 nC total gate charge, and enhanced avalanche ruggedness (370 mJ single-pulse E_AS). Used in SMPS secondary-side switches and UPS output stages where fast diode recovery and dV/dt immunity are critical.

For engineers reviewing the IRFB4610 datasheet, IRFB4610 pinout, IRFB4610 application, or IRFB4610 equivalent, key selection criteria include its 100V V_DSS, 11 mΩ R_DS(on) at 10V V_GS, 35 ns typical t_rr body diode, SOA-limited pulsed current of 290A, and thermal resistance R_θJC = 0.77°C/W - all validated per Infineon's 2010 datasheet revision.

Technical Context

This MOSFET employs planar silicon-gate technology with optimized cell pitch and trench-assisted edge termination to achieve simultaneous low R_DS(on) and high dV/dt immunity (>10 V/ns). Its body diode exhibits 1.3 V forward drop at 44 A and 35–53 ns reverse recovery time, enabling efficient unclamped inductive switching without external snubbers.

The device is characterized for repetitive avalanche operation up to 7.6 A at 175°C junction temperature, with energy rating governed by thermal impedance Z_thJC and pulse width constraints. Gate drive requirements are defined by Q_g = 90 nC (max 140 nC), Q_gd = 36 nC, and g_fs = 73 S - supporting <100 ns switching transitions under 5.6 Ω gate resistance.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	100 V - Maximum blocking voltage before avalanche onset; supports 65 V bus designs with 1.5× safety margin.
R_DS(on) typ.	11 mΩ @ V_GS = 10 V, T_J = 25°C - Enables ≤0.5 W conduction loss at 73 A DC, critical for high-current SMPS outputs.
I_D continuous	73 A @ T_C = 25°C - Requires heatsink capable of maintaining case temperature ≤80°C for full-rated current.
Q_g total	90 nC (max 140 nC) - Determines gate driver power requirement; 10 V drive needs ≥0.9 mW average power at 100 kHz.
t_rr	35 ns (T_J = 25°C), 42 ns (T_J = 125°C) - Limits diode commutation losses in synchronous rectifiers operating >200 kHz.
E_AS	370 mJ - Specifies single-pulse unclamped inductive energy handling; enables robust operation in flyback/LLC resonant converters.
R_θJC	0.77 °C/W - Defines minimum thermal interface conductance needed: 0.5°C/W case-to-sink required for 73 A continuous use.

Pinout & Package

IRFB4610 is housed in a TO-262 (I²PAK) package: 3-pin, through-hole, isolated drain tab, standard 0.150" lead pitch, and 0.200" mounting hole spacing. The drain connects directly to the exposed metal tab for low-inductance thermal and electrical path.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Lead)	Gate	High-impedance control input; requires <140 nC charge for full enhancement; sensitive to ESD (±20 V max).
Pin 2 (Lead)	Drain	Main power terminal; electrically and thermally connected to metal tab; must be isolated from heatsink unless referenced to same potential.
Pin 3 (Lead)	Source	Power return and gate reference node; carries full load current and source-diode recovery current; layout must minimize L_S.

Key Features

Feature	Design Value
Enhanced avalanche ruggedness	370 mJ single-pulse E_AS with validated SOA curves up to 175°C - eliminates need for external clamping in UPS and motor drive H-bridges.
Optimized body diode	35 ns t_rr, 1.3 V V_SD, and 660 A/µs dI/dt capability - enables zero-voltage switching in synchronous rectifiers without parasitic turn-on.
Low gate charge profile	Q_gd/Q_g = 40% - reduces Miller-induced switching delay and improves controllability during hard-switching transitions.
Thermally robust construction	R_θJC = 0.77°C/W and 175°C T_J(max) - supports high-power density designs with forced-air or liquid-cooled heatsinks.
Lead-free and RoHS-compliant	Pb-free plating on leads and solderable tab surface - meets IPC-J-STD-020 moisture sensitivity level 1 (MSL1) for reflow compatibility.

Applications

Server SMPS Secondary-Side Switch

Industrial UPS Output Stage

Use Scenario: High-efficiency 12 V/50 A synchronous rectifier in 1U server power supply with 300 kHz switching frequency.

IC Role / Device Role / Timing Role: Main power switch replacing Schottky diode; body diode conducts during dead-time; gate driven by dedicated SR controller.

Use Value: Reduces conduction loss by 65% vs. 40 V Schottky, enabling >95% efficiency at full load while maintaining <100°C case temperature.

Use Scenario: Bidirectional 48 V DC output stage in online double-conversion UPS handling 3 kVA loads with 10 ms transfer time.

IC Role / Device Role / Timing Role: Low-side switch in half-bridge inverter leg; withstands 100 V bus transients and 290 A surge currents during battery backup mode.

Use Value: Avalanche-rated operation eliminates need for TVS clamps; 0.77°C/W R_θJC allows direct bolt-down heatsinking for 100% duty-cycle reliability.

Hard-Switched LLC Resonant Converter

High-Frequency Welding Inverter

Use Scenario: Primary-side active clamp switch in 500 kHz LLC resonant converter for telecom rectifier with 380 V DC bus.

IC Role / Device Role / Timing Role: Clamping switch absorbing leakage inductance energy; operates in discontinuous conduction with 200 ns turn-off.

Use Value: 140 nC max Q_g and 70 ns fall time enable clean voltage transition across 380 V, reducing EMI generation by 12 dBµV.

Use Scenario: 20 kHz IGBT gate-drive replacement in portable spot welder delivering 8 kA pulses with 50 µs rise time.

IC Role / Device Role / Timing Role: High-speed power switch controlling primary transformer current; body diode handles reverse recovery during polarity reversal.

Use Value: 660 A/µs dI/dt rating and 53 ns t_rr at 125°C ensure consistent arc initiation without shoot-through, improving weld repeatability.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current, 100V power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP75NF10	Higher R_DS(on) (12.5 mΩ typ), lower Q_g (75 nC), same TO-220AB package but no TO-262 variant.	Limited to lower-current (<65 A) designs due to higher conduction loss; less suitable for space-constrained PCBs requiring I²PAK footprint.	Select when gate drive power budget is tight and thermal margin exceeds 15°C; verify SOA compliance for >100 µs pulses.
IXTH75N10L2	Lower R_DS(on) (9.5 mΩ), higher Q_g (160 nC), TO-247 package with superior R_θJC (0.45°C/W), but larger footprint.	Better thermal performance enables 85 A continuous operation, but requires redesign of mounting holes and PCB copper area.	Choose for new designs needing >75 A current or extended lifetime at 150°C junction; avoid if legacy TO-262 mechanical compatibility is mandatory.

Compared with STP75NF10 and IXTH75N10L2, IRFB4610 delivers optimal balance of low R_DS(on), moderate gate charge, and TO-262 mechanical compatibility - making it preferred for retrofitting existing 100V SMPS platforms without board rework.

Availability

IRFB4610 is available at Aetrix Electronics and suitable for high-efficiency synchronous rectification in SMPS, uninterruptible power supply output stages, and high-frequency hard-switched inverters requiring stable component supply and long-term industrial availability.

Supply support for IRFB4610 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.

IRFB4610 belongs to the HEXFET® Power MOSFET product line, designed specifically for high-efficiency, high-reliability power conversion in server, telecom, and industrial UPS systems where avalanche robustness and fast body diode recovery are essential.

FAQ

What is the maximum continuous drain current for IRFB4610 at 100°C case temperature?

The maximum continuous drain current is 52 A at T_C = 100°C with V_GS = 10 V, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the TO-262 package and ensures junction temperature remains below 175°C under steady-state conduction with proper heatsinking.

Does IRFB4610 have a fully characterized avalanche SOA?

Yes - the datasheet provides validated single-pulse avalanche energy (E_AS) of 370 mJ and repetitive avalanche curves (Figures 14–15) covering pulse widths from 1 µs to 100 ms, with explicit limits on I_AR, E_AR, and starting junction temperature up to 175°C.

Can IRFB4610 replace IRFS4610PbF in an existing TO-220AB design?

No - IRFB4610 uses TO-262 (I²PAK) package with different pin spacing, mounting hole pattern, and thermal pad geometry. While electrically identical, mechanical incompatibility requires PCB layout change; IRFS4610PbF remains the correct TO-220AB option for that footprint.

What is the typical reverse recovery charge (Q_rr) of the body diode at 125°C?

The typical Q_rr is 65 nC at T_J = 125°C, V_R = 85 V, I_F = 44 A, and di/dt = 100 A/µs, as measured per Figure 20 in the datasheet. This value increases ~50% over the 25°C condition (44 nC), directly impacting switching loss in synchronous rectifier applications.

IRFB4610 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 73A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 14mOhm @ 44A, 10V

Vgs(th) (Max) @ Id:: 4V @ 100µA

Gate Charge (Qg) (Max) @ Vgs:: 140 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3550 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 190W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

IRFB4610 FAQ

1.How can I place an order for IRFB4610 through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFB4610 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFB4610 reliable?

The price and inventory of IRFB4610 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFB4610 is usually 5 days.

3.What payment methods are accepted for IRFB4610?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFB4610 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFB4610?

IRFB4610 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFB4610 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFB4610?

For technical support, including IRFB4610 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFB4610 requirements.

6.How does Aetrix verify that IRFB4610 is sourced from the original manufacturer or authorized distributors?

All IRFB4610 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFB4610 meets industry standards.

7.What is the process for return or replacement of IRFB4610?

All IRFB4610 units undergo pre-shipment inspection (PSI). If there is an issue with IRFB4610, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFB4610 part is unused and in its original packaging.

Return procedure for IRFB4610:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

2026-07-17 Raspberry Pi Alternatives: Chip-Level Comparison, Compatibility and Replacement Guide

Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…

2026-07-13 How to Test Dynamic Load Response in Low-Voltage High-Current Buck Converters

Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…

2026-07-08 Output Capacitor Selection for High-Current ASIC Vcore Rails

Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…

2026-07-07 High-Current ASIC Core Power Supply Design: 12-Phase Buck, PMBus and Dynamic Load Response

Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …

2026-07-06 Voltage Regulator: Types, Circuits, Testing and Selection Guide

Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.

2026-06-30 Amplifiers Explained: Types, Circuits, Gain, Classes and Applications

Amplifier guide covering voltage, current and power amplification, gain, feedback, amplifier classes, audio and RF applications, op-amp circuits, transimpedance amplifiers, datasheet selection and trou…