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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFB4610PBF

Name: IRFB4610PBF
Brand: Infineon Technologies
SKU: IRFB4610PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFB4610PBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IRFB4610PBF.pdf

Description:: MOSFET N-CH 100V 73A TO220AB

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRFB4610PBF from Infineon (formerly International Rectifier) is a 100V, 73A N-channel enhancement-mode HEXFET Power MOSFET in TO-262 (I²PAK) package, featuring 11 mΩ typical R_DS(on), 90 nC total gate charge, and enhanced body diode dV/dt & dI/dt capability. It is engineered for high-efficiency synchronous rectification in SMPS and hard-switched high-frequency power converters.

For engineers reviewing the IRFB4610PBF datasheet, IRFB4610PBF pinout, IRFB4610PBF application, or IRFB4610PBF equivalent, key selection criteria include avalanche ruggedness (370 mJ E_AS), low C_{oss eff} (380 pF time-related), fast reverse recovery (35 ns t_rr at 25°C), and thermal resistance R_θJC = 0.77 °C/W - critical for high-current, thermally constrained designs.

Technical Context

This MOSFET employs planar silicon-gate technology with optimized cell layout to achieve balanced conduction loss (R_DS(on) = 11 mΩ @ V_GS = 10 V) and switching performance (Q_gd/Q_gs = 36/20 nC). Its intrinsic body diode supports unclamped inductive switching with validated 44 A I_AR and 370 mJ single-pulse avalanche energy under defined test conditions (L = 0.39 mH, R_G = 25 Ω).

The device operates with gate threshold voltage V_GS(th) of 2.0–4.0 V and exhibits positive temperature coefficient for R_DS(on), enabling stable parallel operation. Dynamic parameters-including C_iss = 3550 pF, C_oss = 260 pF, and Crss = 150 pF-are fully characterized up to 80 V V_DS, supporting accurate snubber and gate drive design in resonant and phase-shifted topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	100 V - Maximum blocking voltage before avalanche onset; enables use in 48 V bus and 100 V DC-link applications.
R_DS(on) typ.	11 mΩ @ V_GS = 10 V, T_J = 25°C - Delivers <1 W conduction loss at 73 A, reducing heatsink requirements.
Q_g max.	140 nC - Determines gate driver current demand; impacts switching loss and drive stage sizing.
t_rr	35 ns (T_J = 25°C) - Enables high-frequency synchronous rectification with minimal commutation loss.
E_AS	370 mJ - Specifies single-pulse avalanche energy handling; validates robustness in inductive turn-off transients.
R_θJC	0.77 °C/W - Junction-to-case thermal resistance; defines minimum heatsink interface requirement for 73 A continuous operation.
I_D @ T_C = 100°C	52 A - Continuous drain current derated for elevated case temperatures; sets practical PCB-mount current limit.

Pinout & Package

IRFB4610PBF is housed in a TO-262 (I²PAK) surface-mount-compatible package with isolated tab. The package features copper leadframe, epoxy molding compound, and Pb-free plating per JEDEC J-STD-020.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current path collector / heat sink interface	Electrically connected to die backside; must be electrically isolated from chassis unless system ground reference permits.
Source	Current return path / reference node for gate drive	Serves as common node for source sensing and low-side gate driver return; impacts noise immunity in high-dI/dt layouts.
Gate	Control electrode for channel formation	High-impedance input requiring controlled slew rate; Miller charge (Q_gd = 36 nC) dominates turn-off timing and EMI generation.

Key Features

Feature	Design Value
Enhanced body diode dV/dt capability	Validated >1.3 V/ns (per Fig. 21); prevents spurious turn-on during high-speed voltage transients across freewheeling paths.
Thermally limited avalanche SOA	370 mJ E_AS with full characterization (Fig. 12); enables reliable operation in unclamped inductive switching without external snubbers.
Low C_{oss eff} (TR)	380 pF - Time-related effective output capacitance; reduces turn-on loss in zero-voltage switching (ZVS) circuits.
Lead-free and RoHS-compliant	Meets JEDEC J-STD-020 reflow profile; eliminates Pb contamination risk in automated assembly and end-of-life recycling.
Improved dynamic dV/dt ruggedness	Rated per datasheet Section 1; ensures stable gate bias during rapid drain voltage transitions up to rated V_DSS.

Applications

Server PSU Synchronous Rectifier

Industrial UPS Inverter Stage

Use Scenario: High-density 12 V output rail in 80 PLUS Titanium server PSUs using LLC + SR topology.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diodes; switched at 300–600 kHz with precise gate timing relative to primary-side ZVS events.

Use Value: Reduces conduction loss by >40% vs. 40 V Schottky, enabling >96% efficiency at 50% load while maintaining <65°C case temperature.

Use Scenario: 48 V DC input to 230 V AC inverter in line-interactive UPS systems with battery backup.

IC Role / Device Role / Timing Role: High-current half-bridge switch in H-bridge output stage; handles 73 A peak load current with 100 V blocking margin.

Use Value: Avalanche-rated operation withstands inductive kickback during grid-fail transfer; R_DS(on) stability over temperature avoids current imbalance in paralleled stages.

Telecom DC-DC Brick Converter

EV Onboard Charger PFC Switch

Use Scenario: 48 V input, 12 V output non-isolated buck converter in telecom base station power modules.

IC Role / Device Role / Timing Role: High-side main switch operating at 500 kHz with active gate control and integrated current sense.

Use Value: Low Q_g/R_DS(on) ratio minimizes combined switching + conduction loss; C_oss linearity supports predictable dead-time optimization.

Use Scenario: Boost switch in 6.6 kW OBC PFC stage operating at 100 kHz with 400 V DC-link.

IC Role / Device Role / Timing Role: Fast-switching boost transistor in continuous conduction mode (CCM) PFC; subjected to repetitive 100 V–400 V transitions.

Use Value: Body diode t_rr = 35 ns and Q_rr = 44 nC reduce reverse recovery loss and EMI; dV/dt ruggedness prevents false triggering during voltage overshoot.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current, 100 V power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP75NF10	R_DS(on) = 13.5 mΩ (typ), Q_g = 120 nC, TO-220 package, no avalanche rating published	Lacks specified E_AS and dV/dt ruggedness validation; requires external clamping in inductive loads	Prefer where cost sensitivity outweighs need for unclamped inductive robustness and thermal performance is less constrained.
IXTH75N10L2	R_DS(on) = 10.5 mΩ (typ), Q_g = 135 nC, TO-247 package, 320 mJ E_AS, slower t_rr = 65 ns	Higher package thermal resistance (R_θJC = 0.55 °C/W), larger footprint, weaker body diode recovery	Choose when higher peak current (75 A) and lower R_DS(on) justify larger package and reduced switching frequency headroom.

Compared with STP75NF10 and IXTH75N10L2, IRFB4610PBF offers superior avalanche energy (370 mJ), faster body diode recovery (35 ns), and optimized TO-262 thermal interface (R_θJC = 0.77 °C/W), making it preferred for compact, high-reliability SMPS and UPS inverters demanding repeatable unclamped switching behavior.

Availability

IRFB4610PBF is available at Aetrix Electronics and suitable for high-efficiency synchronous rectification in SMPS, uninterruptible power supply inverters, and high-frequency hard-switched power converters requiring stable component supply and long-term industrial lifecycle support.

Supply support for IRFB4610PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO/TS 16949 and ISO 14001.

IRFB4610PBF belongs to Infineon's legacy HEXFET® Power MOSFET product line, originally developed by International Rectifier and designed for high-current, high-ruggedness switching in mission-critical power conversion systems.

FAQ

Is IRFB4610PBF suitable for paralleling in high-current applications?

Yes - its positive R_DS(on) temperature coefficient (see Fig. 4) ensures current sharing stability across multiple devices. Derating to ≤52 A per device at T_C = 100°C and matching gate drive loop inductance are required. Thermal coupling between devices must be minimized to avoid thermal runaway.

What is the maximum recommended gate resistor value for hard-switched 100 kHz operation?

For 100 kHz hard-switched operation with 140 nC Q_g max, a gate resistor of 10–15 Ω is recommended to limit peak gate current to <1.5 A while maintaining <53 ns t_d(off). Lower values increase E_sw; higher values risk shoot-through in bridge configurations due to extended overlap time.

Does IRFB4610PBF have a qualified automotive grade variant?

No - IRFB4610PBF is an industrial-grade part. Infineon offers the AUIRF4610 as the automotive-qualified version, qualified to AEC-Q101 with extended temperature range (−55°C to +175°C) and additional stress testing including HTGB and uHAST.

Can IRFB4610PBF replace IRF4610 in existing designs?

Yes - IRFB4610PBF is the Pb-free, RoHS-compliant successor to IRF4610 (SnPb finish). Electrical specs, pinout, and package dimensions are identical. Reflow profile must follow J-STD-020 for lead-free soldering; no changes to gate drive or thermal design are needed.

IRFB4610PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 73A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 14mOhm @ 44A, 10V

Vgs(th) (Max) @ Id:: 4V @ 100µA

Gate Charge (Qg) (Max) @ Vgs:: 140 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3550 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 190W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

IRFB4610PBF FAQ

1.How can I place an order for IRFB4610PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFB4610PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFB4610PBF reliable?

The price and inventory of IRFB4610PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFB4610PBF is usually 5 days.

3.What payment methods are accepted for IRFB4610PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFB4610PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFB4610PBF?

IRFB4610PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFB4610PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFB4610PBF?

For technical support, including IRFB4610PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFB4610PBF requirements.

6.How does Aetrix verify that IRFB4610PBF is sourced from the original manufacturer or authorized distributors?

All IRFB4610PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFB4610PBF meets industry standards.

7.What is the process for return or replacement of IRFB4610PBF?

All IRFB4610PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFB4610PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFB4610PBF part is unused and in its original packaging.

Return procedure for IRFB4610PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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