Infineon Technologies IRFB4710PBF

Overview

IRFB4710PBF from Infineon Technologies is a 100V, 75A N-channel enhancement-mode HEXFET® Power MOSFET in TO-262 (I²PAK) package, optimized for high-efficiency DC-DC converters, motor control, and UPS systems. It features R_DS(on) = 0.014 Ω @ V_GS = 10 V, Q_g = 110 nC (typ), and avalanche-rated E_AS = 190 mJ - enabling robust hard-switching operation at high current and moderate voltage.

For engineers reviewing the IRFB4710PBF datasheet, IRFB4710PBF pinout, IRFB4710PBF application, or IRFB4710PBF equivalent, key selection criteria include its low gate charge for fast switching, fully characterized C_oss and C_rss, thermal resistance R_θJC = 0.74 °C/W, and lead-free compliance per JEDEC TO-262 outline.

Technical Context

This MOSFET employs planar silicon process with optimized cell pitch and trench-assisted charge balancing to achieve low R_DS(on) while maintaining rugged unclamped inductive switching capability. Its gate threshold voltage V_GS(th) = 3.5–5.5 V ensures reliable turn-on with standard 10 V gate drivers and avoids false triggering under noise.

The device integrates a low-V_SD body diode (1.3 V @ 45 A, T_J = 25°C) with t_rr = 74–110 ns and Q_rr = 180–260 nC, supporting synchronous rectification and ZVS-assisted topologies. Dynamic parameters are fully characterized across V_DS = 1–80 V and T_J = 25–175°C per Application Note AN1001.

Key Specifications

Pinout & Package

IRFB4710PBF uses the TO-262 (I²PAK) package: insulated plastic case with 4-pin layout, drain-connected tab for heatsinking, and lead-free finish compliant with RoHS and JEDEC J-STD-020.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with STP75NF75 and IXTH75N10L2, IRFB4710PBF offers balanced trade-offs: lower Q_g than both, certified avalanche ruggedness, and TO-262 thermal performance superior to TO-220 - making it optimal for compact, reliability-critical industrial inverters.

Availability

IRFB4710PBF is available at Aetrix Electronics and suitable for high-frequency DC-DC converters, motor control systems, and uninterruptible power supplies requiring stable component supply and long-term industrial lifecycle support.

Supply support for IRFB4710PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive ICs, and industrial control solutions, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

The HEXFET® Power MOSFET product line targets high-efficiency power conversion in industrial, computing, and renewable energy systems - designed for low-loss switching, thermal resilience, and system-level reliability under repetitive stress.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The IRFB4710PBF supports 53 A continuous drain current at T_C = 100°C with V_GS = 10 V, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the TO-262 package and must be validated against actual PCB layout, heatsink interface, and ambient airflow in the target application.

Is IRFB4710PBF suitable for zero-voltage switching (ZVS) topologies?

Yes - its fully characterized C_oss (430 pF effective) and low Q_gd (40 nC) enable precise resonant timing and reduced voltage-dependent switching loss. The device's 100 V rating and 190 mJ E_AS make it appropriate for LLC and phase-shifted full-bridge designs up to 400 V bus.

Does the body diode support synchronous rectification?

No - the integrated body diode has t_rr = 74–110 ns and Q_rr = 180–260 nC, which introduces significant reverse recovery loss. For synchronous rectification, an external Schottky or MOSFET-based synchronous rectifier is required to avoid efficiency degradation.

What is the recommended gate resistor value for hard-switching at 100 kHz?

A 4.5 Ω gate resistor is used in the datasheet's switching time test circuit (Fig 10a) and yields t_d(on) = 35 ns, t_r = 130 ns, t_d(off) = 41 ns, and t_f = 38 ns. For 100 kHz hard-switching, this value balances speed and gate ringing; increase to 10–15 Ω if EMI or overshoot is observed in the specific layout.