Infineon Technologies IRFB59N10DPBF

Overview

IRFB59N10DPBF from Infineon Technologies (formerly International Rectifier) is a 100V, 59A N-channel enhancement-mode HEXFET Power MOSFET in TO-262 package, optimized for high-frequency DC-DC converters and half/full-bridge topologies. It features 0.025Ω R_DS(on) at V_GS = 10V, 76nC total gate charge, and fully characterized C_oss (690pF effective), enabling low switching loss in SMPS designs for industrial UPS and motor inverters.

For engineers reviewing the IRFB59N10DPBF datasheet, IRFB59N10DPBF pinout, IRFB59N10DPBF application, or IRFB59N10DPBF equivalent, key selection criteria include its avalanche-rated 510mJ single-pulse energy, 3.3V/ns diode recovery dv/dt capability, and thermal resistance of 0.75°C/W junction-to-case - critical for high-reliability power stage design.

Technical Context

This MOSFET employs planar silicon HEXFET architecture with optimized cell pitch and trench-assisted drift region to achieve low R_DS(on) × Q_g figure-of-merit (1.9 Ω·nC). Its gate charge profile (Q_gd/Q_g = 47%) supports controlled Miller plateau transition during hard-switching.

The device integrates a robust body diode with 130ns reverse recovery time and 0.75µC Q_rr at 100A/µs di/dt, validated for unclamped inductive switching up to 35.4A avalanche current. Thermal design leverages direct die-to-case conduction via copper leadframe in TO-262.

Key Specifications

Pinout & Package

IRFB59N10DPBF uses the TO-262 (I²PAK) package: non-isolated, surface-mount compatible variant of TO-220 with gull-wing leads and exposed drain pad for thermal enhancement.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current, high-voltage power MOSFET applications.

Compared with STP55NF10 and IXTH50N10L2, IRFB59N10DPBF uniquely balances low R_DS(on), moderate Q_g, and dual-drain TO-262 packaging - making it optimal for compact, high-frequency (>150kHz), high-reliability SMPS where layout parasitics and avalanche robustness are critical.

Availability

IRFB59N10DPBF is available at Aetrix Electronics and suitable for industrial UPS inverters, server SMPS half-bridge stages, and telecom DC-DC converters requiring stable component supply and long-term manufacturing continuity.

Supply support for IRFB59N10DPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

This device belongs to Infineon's HEXFET Power MOSFET product line, engineered specifically for high-efficiency, high-reliability switching power supplies and motor drives operating above 50kHz with stringent avalanche and thermal performance requirements.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The IRFB59N10DPBF supports 42A continuous drain current at T_C = 100°C with V_GS = 10V, as specified in the Absolute Maximum Ratings table. This derating from 59A at 25°C reflects thermal limitations of the TO-262 package and must be verified against actual board-level thermal resistance in the target application.

Does this MOSFET require a gate resistor, and what value is recommended?

Yes - a gate resistor is required to control dV/dt and prevent oscillation. For typical 10V gate drive and 76nC Q_g, a 2.5Ω resistor is recommended (per datasheet test condition), limiting peak gate current to ~4A and ensuring stable turn-on/turn-off transitions in hard-switching topologies.

Can IRFB59N10DPBF be used in synchronous rectification applications?

Yes - its body diode has 130ns reverse recovery time and 0.75µC Q_rr, enabling use as a synchronous rectifier in forward or LLC converters up to 300kHz. However, external Schottky diodes may still be preferred in ultra-high-efficiency designs due to lower forward voltage drop.

Is the TO-262 package electrically isolated from the drain terminal?

No - the TO-262 package exposes the drain metallization on the backside tab and Pins 2 and 4. Electrical isolation from the heatsink is mandatory unless the drain node is system ground; standard mica or ceramic insulators with thermal grease are required for safe mounting.