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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFB61N15DPBF

Name: IRFB61N15DPBF
Brand: Infineon Technologies
SKU: IRFB61N15DPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFB61N15DPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IRFB61N15DPBF.pdf

Description:: MOSFET N-CH 150V 60A TO220AB

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRFB61N15DPBF from Infineon Technologies (formerly International Rectifier) is a 150V, 60A N-channel enhancement-mode HEXFET Power MOSFET in TO-220AB package, optimized for high-frequency SMPS, motor control, and UPS systems. It features R_DS(on) = 0.032 Ω @ V_GS = 10 V, Q_g = 95 nC (typ), and fully characterized C_oss,eff = 580 pF for simplified hard-switching design.

For engineers reviewing the IRFB61N15DPBF datasheet, IRFB61N15DPBF pinout, IRFB61N15DPBF application, or IRFB61N15DPBF equivalent, key selection criteria include avalanche energy rating (E_AS = 520 mJ), diode reverse recovery performance (Q_rr = 1340–2010 nC), thermal resistance (R_θJC = 0.45 °C/W), and lead-free compliance per JEDEC TO-220AB outline.

Technical Context

This MOSFET employs planar silicon process with optimized charge balance for low gate-to-drain charge (Q_gd = 45–68 nC) and fast switching (t_r = 110 ns, t_f = 51 ns). Its body diode is fully specified for unclamped inductive switching with I_AR = 37 A and trr = 180–270 ns at di/dt = 100 A/µs.

The device operates across –55°C to +175°C junction temperature range and supports linear derating of 2.2 W/°C above 25°C case temperature. Its SOA is defined up to 100 µs pulse width with R_DS(on)-limited boundary, enabling robust operation in peak-current-limited DC-DC converters.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	150 V - Maximum blocking voltage before avalanche onset; enables use in 48 V–100 V bus systems with margin.
R_DS(on) max	0.032 Ω @ V_GS = 10 V, I_D = 36 A - Defines conduction loss at rated current; yields <1.15 W P_cond at 37 A.
I_D cont @ T_C = 25°C	60 A - Continuous drain current capability with heatsink; sets minimum heatsink size for 330 W dissipation.
Q_g	95 nC (typ), 140 nC (max) - Total gate charge determines driver strength requirement; impacts turn-on loss in high-frequency operation.
E_AS	520 mJ - Single-pulse avalanche energy rating; allows safe operation during inductive turn-off transients without external snubbers.
C_oss,eff	580 pF - Effective output capacitance over 0–120 V; used directly in resonant timing and ZVS transition calculations.
R_θJC	0.45 °C/W - Junction-to-case thermal resistance; defines temperature rise per watt at the mounting surface under ideal heatsink contact.

Pinout & Package

IRFB61N15DPBF uses the industry-standard TO-220AB package with isolated tab (drain-connected), 4-pin configuration, and lead-free finish compliant with JEDEC MS-001BA. Mounting torque: 10 lbf·in (1.1 N·m) for 6-32 or M3 screw.

Pin/Terminal	Circuit Role	Design Meaning
1 - Gate	Control electrode	High-impedance input requiring <100 nA leakage; drives with 10 V threshold (3.0–5.5 V) and 95 nC total charge.
2 - Drain	Main power terminal (high-side)	Connected to heatsink tab; carries full load current and withstands 150 V breakdown; electrically tied to Pin 4.
3 - Source	Power return / reference node	Common return path for drain current and gate drive loop; critical for minimizing switching noise coupling.
4 - Drain	Secondary drain connection	Redundant drain terminal for improved current sharing and lower inductance in high-current PCB layouts.

Key Features

Feature	Design Value
Low gate-to-drain charge (Q_gd)	45–68 nC - Reduces Miller-induced switching delay and improves controllability in hard-switched topologies.
Fully characterized C_oss,eff	580 pF - Enables accurate prediction of turn-off loss and resonant behavior without curve-fitting.
Avalanche-rated operation	E_AS = 520 mJ, I_AR = 37 A - Eliminates need for external clamping in flyback or LLC primary switches.
Body diode with controlled Q_rr	Q_rr = 1340–2010 nC, t_rr = 180–270 ns - Supports synchronous rectification and bidirectional current flow in half-bridge motor drives.
Thermal robustness	T_J = –55°C to +175°C, R_θJC = 0.45 °C/W - Ensures reliability in sealed industrial enclosures with limited airflow.

Applications

High-Frequency DC-DC Converters

Motor Control Inverters

Use Scenario: Primary-side switch in 100–500 kHz isolated forward or half-bridge converters for telecom and server PSUs.

IC Role / Device Role / Timing Role: High-side power switch handling 60 A peak currents with minimal conduction and switching losses.

Use Value: Low R_DS(on) (0.032 Ω) and Q_g (95 nC) reduce total power loss below 3.5 W at 37 A/100 kHz, improving efficiency >94%.

Use Scenario: Phase-leg switch in 3-phase BLDC inverters for HVAC compressors and industrial pumps.

IC Role / Device Role / Timing Role: N-channel high-side and low-side switch operating with 120 V DC bus and 10 kHz PWM.

Use Value: Avalanche rating (520 mJ) tolerates inductive kickback during commutation; body diode Q_rr enables clean freewheeling.

Uninterruptible Power Supplies

Industrial SMPS Modules

Use Scenario: Output stage switch in line-interactive UPS inverters delivering 1–3 kVA sinusoidal output.

IC Role / Device Role / Timing Role: Bidirectional switch supporting battery charging and AC inversion with reverse conduction capability.

Use Value: Specified source current (I_S cont = 60 A) and diode V_SD = 1.3 V enable efficient bidirectional energy transfer.

Use Scenario: Main switch in DIN-rail mounted 48 V input industrial SMPS for PLC and sensor power rails.

IC Role / Device Role / Timing Role: Primary switch in fixed-frequency 200 kHz flyback with 150 V clamp margin.

Use Value: R_θJC = 0.45 °C/W and 175°C T_J rating ensure stable operation at 70°C ambient without derating.

Equivalent & Alternatives

The following parts are listed as comparable options for similar power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP60NF15	R_DS(on) = 0.033 Ω, Q_g = 105 nC, E_AS = 420 mJ	Lower avalanche energy; higher gate charge increases driver loss	Acceptable where avalanche stress is low and gate drive capability exceeds 2 A peak.
IXTH60N15L2	R_DS(on) = 0.028 Ω, Q_g = 120 nC, TO-247 package	Larger footprint; higher gate charge offsets lower R_DS(on) benefit at >200 kHz	Preferred only when thermal budget allows TO-247 and layout space permits larger outline.

Compared with STP60NF15 and IXTH60N15L2, IRFB61N15DPBF delivers optimal balance of low Q_g, robust avalanche margin, and TO-220AB compatibility-making it ideal for cost-sensitive, space-constrained industrial SMPS where reliability under transient overload is critical.

Availability

IRFB61N15DPBF is available at Aetrix Electronics and suitable for high-frequency DC-DC converters, motor control inverters, and uninterruptible power supplies requiring stable component supply and long-term industrial lifecycle support.

Supply support for IRFB61N15DPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

The HEXFET Power MOSFET product line was originally developed by International Rectifier and acquired by Infineon in 2015; it targets high-efficiency, high-reliability power conversion in industrial, computing, and renewable energy systems.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The IRFB61N15DPBF supports 42 A continuous drain current at T_C = 100°C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the TO-220AB package and ensures junction temperature remains ≤175°C with proper heatsinking and thermal interface material.

Is the body diode suitable for synchronous rectification?

No-the body diode is not optimized for synchronous rectification due to relatively high Q_rr (1340–2010 nC) and V_SD (1.3 V). It is designed for freewheeling and clamping in inverter and SMPS applications, not low-loss bidirectional conduction. External Schottky or MOSFET-based synchronous rectifiers are recommended for efficiency-critical paths.

Does IRFB61N15DPBF require a gate resistor for stability?

Yes-a gate resistor (typically 1.8 Ω, as used in characterization) is required to dampen ringing caused by gate loop inductance and prevent spurious turn-on. The device's Q_gd/Q_gs ratio and 3.0–5.5 V V_GS(th) make it susceptible to dv/dt-induced turn-on without proper gate control.

Can this MOSFET be used in avalanche mode repeatedly?

No-while rated for single-pulse avalanche energy (E_AS = 520 mJ), repetitive avalanche (E_AR = 33 mJ) is strictly limited and requires precise control of I_AR, pulse width (<400 µs), and duty cycle (<2%). Industrial designs should avoid reliance on repetitive avalanche; snubber circuits or topology-level protection are preferred.

IRFB61N15DPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 150 V

Current - Continuous Drain (Id) @ 25°C:: 60A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 32mOhm @ 36A, 10V

Vgs(th) (Max) @ Id:: 5.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 140 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 3470 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 2.4W (Ta), 330W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

IRFB61N15DPBF FAQ

1.How can I place an order for IRFB61N15DPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFB61N15DPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFB61N15DPBF reliable?

The price and inventory of IRFB61N15DPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFB61N15DPBF is usually 5 days.

3.What payment methods are accepted for IRFB61N15DPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFB61N15DPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFB61N15DPBF?

IRFB61N15DPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFB61N15DPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFB61N15DPBF?

For technical support, including IRFB61N15DPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFB61N15DPBF requirements.

6.How does Aetrix verify that IRFB61N15DPBF is sourced from the original manufacturer or authorized distributors?

All IRFB61N15DPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFB61N15DPBF meets industry standards.

7.What is the process for return or replacement of IRFB61N15DPBF?

All IRFB61N15DPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFB61N15DPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFB61N15DPBF part is unused and in its original packaging.

Return procedure for IRFB61N15DPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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