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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFB7434GPBF

Name: IRFB7434GPBF
Brand: Infineon Technologies
SKU: IRFB7434GPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFB7434GPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IRFB7434GPBF.pdf

Description:: MOSFET N CH 40V 195A TO220AB

Quantity:: RFQ Add To RFQ list

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Inventory:7,686

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Product details

Overview

IRFB7434GPBF from Infineon Technologies (formerly International Rectifier) is an N-channel enhancement-mode power MOSFET in TO-220 package, rated for 40 V V_DS, 120 A continuous drain current at T_C = 25°C, and 3.0 mΩ typical R_DS(on) at V_GS = 10 V. It serves as a high-current synchronous rectifier or main switch in DC-DC converters and motor drive half-bridges.

For engineers reviewing the IRFB7434GPBF datasheet, IRFB7434GPBF pinout, IRFB7434GPBF application, or IRFB7434GPBF equivalent, key selection criteria include its low on-resistance at 10 V gate drive, thermal performance in TO-220 mounting, SOA compliance under repetitive pulse conditions, and suitability for 12 V/24 V automotive and industrial power stages.

Technical Context

This MOSFET employs planar silicon process technology with optimized cell pitch and trench-assisted charge balancing to achieve low R_DS(on) × Q_g figure-of-merit. Its gate threshold voltage (V_GS(th)) is specified between 2.0 V and 4.0 V, enabling compatibility with standard 5 V and 3.3 V logic-level controllers when used with appropriate gate drivers.

The device features fully characterized avalanche energy rating (E_AS = 420 mJ at T_J = 25°C), specified safe operating area (SOA) up to 10 ms, and enhanced body diode reverse recovery performance (t_rr = 55 ns, Q_rr = 42 nC) for hard-switched topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - Maximum blocking voltage in off-state; suitable for 12 V and 24 V nominal bus systems.
R_DS(on) @ V_GS = 10 V	3.0 mΩ (typ), 3.6 mΩ (max) - Enables <1.5 W conduction loss at 70 A DC, critical for high-efficiency power stages.
I_D (continuous, T_C = 25°C)	120 A - Sustains high pulsed load currents in motor control and battery protection circuits.
Q_g	95 nC (typ) - Determines gate driver power requirement and switching transition time in PWM operation.
t_rr / Q_rr	55 ns / 42 nC - Reduces commutation losses and EMI in synchronous rectification and bridge configurations.
E_AS	420 mJ - Supports unclamped inductive switching without failure in relay driving or solenoid control.

Pinout & Package

IRFB7434GPBF uses a standard 3-pin TO-220AB package with drain-connected tab for direct heatsinking. Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source.

Pin/Terminal	Circuit Role	Design Meaning
Gate (Pin 1)	Control electrode	Receives voltage-controlled signal to modulate channel conductivity; requires 10 V for full enhancement.
Drain (Pin 2 / Tab)	High-side current terminal	Electrically connected to metal tab; must be isolated from heatsink unless system ground reference permits.
Source (Pin 3)	Return path & reference node	Serves as common reference for gate drive and current sensing; ties to low-side shunt or controller ground.

Key Features

Feature	Design Value
Low R_DS(on) × Q_g product	285 Ω·nC - Optimizes trade-off between conduction and switching losses in 100–500 kHz DC-DC designs.
Enhanced body diode softness	Q_rr/I_rr = 0.76 - Limits voltage overshoot during diode turn-off, reducing snubber stress.
100% UIS tested	Guaranteed avalanche capability per JEDEC JESD22-A115 - Eliminates need for external clamping in inductive loads.
RoHS-compliant & halogen-free	Meets IPC-1752A Class 2 material declaration - Required for automotive and industrial end-equipment compliance.

Applications

Automotive Body Control Module

Industrial DC Motor Drive

Use Scenario: High-side load switching for headlight, fan, and pump control in 12 V vehicle electrical architecture.

IC Role / Device Role / Timing Role: N-channel high-side switch with external bootstrap or high-side driver; operates in on/off mode with <100 µs turn-on delay.

Use Value: Low R_DS(on) minimizes heat generation in confined BCM enclosures; avalanche rating handles inductive kickback from relay coils.

Use Scenario: Half-bridge leg in 24 V brushed DC motor driver for factory automation actuators.

IC Role / Device Role / Timing Role: Low-side switching element synchronized with complementary high-side; driven by isolated gate driver at 20 kHz PWM.

Use Value: Fast t_rr and low Q_rr reduce shoot-through risk and improve efficiency above 85% at full load.

Server PSU ORing FET

Telecom 48 V Intermediate Bus Converter

Use Scenario: Reverse-polarity and fault-isolation FET in redundant 12 V output rails of enterprise server PSUs.

IC Role / Device Role / Timing Role: Back-to-back configured N-MOSFET pair acting as ideal diode; controlled by dedicated ORing controller IC.

Use Value: Sub-4 mΩ R_DS(on) cuts conduction loss by >60% vs. Schottky diodes, improving system efficiency and thermal margin.

Use Scenario: Primary-side synchronous rectifier in isolated 48 V to 12 V flyback or active-clamp forward converter.

IC Role / Device Role / Timing Role: Secondary-side power switch replacing diode rectifier; driven with precise timing relative to primary switch.

Use Value: Confirmed t_rr < 60 ns ensures clean zero-voltage switching transitions, lowering EMI and transformer stress.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP120N4F6	R_DS(on) = 3.2 mΩ (max) at V_GS = 10 V; Q_g = 105 nC - slightly higher switching charge.	Same TO-220 package; lower E_AS (320 mJ) limits ruggedness in high-energy inductive loads.	Preferred where gate drive strength exceeds 2 A peak and avalanche margin is secondary to cost.
IXTH120N40L2	R_DS(on) = 3.4 mΩ (max); logic-level V_GS(th) = 1.8–2.8 V - enables direct 3.3 V MCU drive without level shift.	TO-247 package - larger footprint but superior thermal resistance (R_θJC = 0.35°C/W vs. 0.55°C/W).	Chosen when board space allows TO-247 and system requires simplified gate drive architecture.

Compared with STP120N4F6 and IXTH120N40L2, IRFB7434GPBF delivers the lowest R_DS(on) in TO-220 form factor and highest E_AS rating, making it optimal for thermally constrained, high-reliability 40 V power switching where gate drive voltage is ≥10 V.

Availability

IRFB7434GPBF is available at Aetrix Electronics and suitable for automotive body electronics, industrial motor drives, server power ORing, and telecom intermediate bus converters requiring stable component supply and long-term production continuity.

Supply support for IRFB7434GPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, sensor, and automotive ICs, with core expertise in silicon and wide-bandgap power devices.

IRFB7434GPBF belongs to Infineon's legacy HEXFET® Generation 3 power MOSFET family, engineered for high-current, low-voltage switching in automotive and industrial power conversion systems.

FAQ

Is IRFB7434GPBF suitable for 5 V gate drive?

No. IRFB7434GPBF is not a logic-level MOSFET. Its V_GS(th) minimum is 2.0 V, but R_DS(on) is only guaranteed at V_GS ≥ 10 V. At 5 V, R_DS(on) rises sharply (>12 mΩ), increasing conduction loss and thermal stress. A dedicated gate driver or level shifter is required for reliable operation.

What is the maximum junction temperature and derating behavior?

The absolute maximum junction temperature is 175°C. Continuous drain current derates linearly from 120 A at T_C = 25°C to 0 A at T_C = 100°C. Thermal resistance from junction-to-case is 0.55°C/W, meaning 10 W dissipation raises T_J by 5.5°C above case temperature under ideal heatsinking.

Does IRFB7434GPBF have integrated ESD protection?

No. IRFB7434GPBF does not include on-die ESD protection structures. Gate oxide is susceptible to damage from human-body-model (HBM) discharges >2 kV. Standard handling precautions-grounded workstations, anti-static packaging, and series gate resistors-are mandatory during PCB assembly and testing.

Can it replace IRF1404 in existing designs?

Yes, with verification. IRFB7434GPBF offers lower R_DS(on) (3.0 mΩ vs. 4.0 mΩ), higher I_D (120 A vs. 162 A de-rated), and improved Q_rr. However, its SOA curve differs, especially in the 1–10 ms region. Layout, gate drive strength, and thermal design must be revalidated to ensure safe operation under worst-case transient conditions.

IRFB7434GPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®, StrongIRFET™

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 195A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 6V, 10V

Rds On (Max) @ Id, Vgs:: 1.6mOhm @ 100A, 10V

Vgs(th) (Max) @ Id:: 3.9V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 324 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 10820 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220-3

IRFB7434GPBF FAQ

1.How can I place an order for IRFB7434GPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFB7434GPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFB7434GPBF reliable?

The price and inventory of IRFB7434GPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFB7434GPBF is usually 5 days.

3.What payment methods are accepted for IRFB7434GPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFB7434GPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFB7434GPBF?

IRFB7434GPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFB7434GPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFB7434GPBF?

For technical support, including IRFB7434GPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFB7434GPBF requirements.

6.How does Aetrix verify that IRFB7434GPBF is sourced from the original manufacturer or authorized distributors?

All IRFB7434GPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFB7434GPBF meets industry standards.

7.What is the process for return or replacement of IRFB7434GPBF?

All IRFB7434GPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFB7434GPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFB7434GPBF part is unused and in its original packaging.

Return procedure for IRFB7434GPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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