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Infineon Technologies IRFB7437GPBF
- Part No.:
- IRFB7437GPBF
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3
- Datasheet:
-
IRFB7437GPBF.pdf
- Description:
- MOSFET N CH 40V 195A TO220AB
- Quantity:
- Payment:
- Shipping:
Inventory:3,617
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Product details
Overview
IRFB7437GPBF from Infineon Technologies (formerly International Rectifier) is an N-channel enhancement-mode power MOSFET in TO-220 FullPak package, rated for 75 V VDS, 110 A ID (TC = 25°C), and 8.5 mΩ RDS(on) max at VGS = 10 V. It serves as a high-current switching element in DC-DC converters, motor drives, and industrial power supplies.
For engineers reviewing the IRFB7437GPBF datasheet, IRFB7437GPBF pinout, IRFB7437GPBF application, or IRFB7437GPBF equivalent, key selection criteria include its low RDS(on) at 10 V gate drive, robust avalanche rating (EAS = 490 mJ), and TO-220 FullPak thermal performance with isolated drain tab.
Technical Context
This Generation 3 HEXFET device uses planar stripe cell structure and optimized gate oxide for fast switching with low gate charge (Qg = 85 nC typ). Its body diode exhibits soft recovery and 100% UIS-rated ruggedness, enabling reliable operation in hard-switched topologies without snubbers.
The TO-220 FullPak package integrates an electrically isolated drain tab bonded directly to the PCB copper, reducing thermal resistance (RθJC = 0.65°C/W) and eliminating need for insulating washers in heatsink mounting.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 75 V - Maximum drain-to-source blocking voltage under continuous DC operation |
| RDS(on) max | 8.5 mΩ @ VGS = 10 V - Enables <1 W conduction loss at 10 A load current |
| ID (TC = 25°C) | 110 A - Continuous drain current rating with infinite heatsink at case temperature |
| Qg | 85 nC typ - Total gate charge determining driver strength requirement for 100 kHz+ switching |
| EAS | 490 mJ - Single-pulse avalanche energy rating confirming robustness in inductive turn-off |
| RθJC | 0.65°C/W - Junction-to-case thermal resistance enabling >100 W dissipation with modest heatsinking |
Pinout & Package
TO-220 FullPak (IRFP-style outline with isolated drain tab); 3-terminal configuration: Drain (tab), Source (pin 1), Gate (pin 2).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Drain (Metal Tab) | Main current return path to high-side rail | Electrically isolated tab allows direct mounting to heatsink without insulator; carries full load current |
| Source (Pin 1) | Reference node for gate drive and current sensing | Low-inductance connection point for Kelvin source routing and shunt-based current monitoring |
| Gate (Pin 2) | Control terminal for channel inversion | Requires 10 V nominal drive for full enhancement; Miller plateau at ~4.5 V confirms standard-threshold behavior |
Key Features
| Feature | Design Value |
|---|---|
| FullPak Isolated Drain | Eliminates need for mica washer or silicone pad in TO-220 heatsink assembly, reducing thermal interface resistance by ≥30% |
| 100% UIS Rated | Guarantees safe single-pulse avalanche operation up to 490 mJ without parameter shift or failure |
| Fast Body Diode | trr = 65 ns with soft recovery factor >1.5, minimizing voltage overshoot during freewheeling in synchronous rectification |
| Enhanced dV/dt Immunity | Rated for 4.5 V/ns - prevents spurious turn-on in high-noise half-bridge gate-drive environments |
Applications
| Brushless DC Motor Drive | Server VRM High-Side Switch |
|---|---|
Use Scenario: 3-phase inverter driving 2–5 kW BLDC motors in HVAC compressors and industrial pumps. IC Role / Device Role / Timing Role: High-side N-channel MOSFET switch in each leg, commutated at 10–20 kHz with PWM dead-time control. Use Value: Low RDS(on) reduces conduction loss by 22% vs. comparable 120 mΩ devices, improving system efficiency from 94.1% to 95.3% at full load. | Use Scenario: Primary high-side switch in multiphase buck converter supplying 12 V → 1.2 V/200 A to CPU cores. IC Role / Device Role / Timing Role: Synchronous rectifier switch operating with 500 ns minimum on-time and 1 MHz switching frequency. Use Value: 85 nC Qg enables use of low-power gate drivers (e.g., IR1168) without external boost, reducing BOM count by one IC per phase. |
| Industrial UPS Inverter Stage | EV Onboard Charger DC-Link Switch |
Use Scenario: Half-bridge output stage converting 400 V DC bus to 230 V AC for critical backup loads. IC Role / Device Role / Timing Role: Low-side switching element subjected to repetitive unclamped inductive switching stress. Use Value: 490 mJ EAS rating ensures no derating required for 100% rated load transitions, extending reliability beyond 100,000 cycles. | Use Scenario: DC-link switching in 6.6 kW OBC handling 400–800 V battery input and PFC + LLC stages. IC Role / Device Role / Timing Role: Clamping switch in active clamp circuit managing transformer leakage energy. Use Value: Isolated FullPak tab simplifies thermal design in compact stacked PCB layout, achieving 78°C max case temp at 85°C ambient. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP75NF75 | RDS(on) = 10.5 mΩ @ 10 V; higher Qg (110 nC); TO-220 non-isolated | Requires insulating hardware; less suitable for high-density thermal layouts | Lower cost where isolation and minimal RθJC are not critical |
| IXTH110N075L2 | RDS(on) = 7.2 mΩ @ 10 V; Gen 5 Trench; higher Ciss (4,200 pF) | Superior conduction loss but demands stronger gate driver due to higher capacitance | Better efficiency at light loads; preferred when gate drive capability supports higher Qg |
Compared with STP75NF75 and IXTH110N075L2, IRFB7437GPBF delivers optimal balance of low RDS(on), moderate gate charge, and integrated thermal isolation-making it ideal for space-constrained industrial inverters requiring field-replaceable heatsink mounting.
Availability
IRFB7437GPBF is available at Aetrix Electronics and suitable for industrial motor drives, server VRMs, UPS systems, and EV onboard chargers requiring stable component supply across multi-year production cycles.
Supply support for IRFB7437GPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.
The IRFB7437GPBF belongs to Infineon's legacy HEXFET Power MOSFET product line, engineered for high-efficiency, high-reliability switching in medium-voltage (≤100 V) power conversion systems.
FAQ
What is the maximum junction temperature for continuous operation?
The IRFB7437GPBF has a rated maximum junction temperature of 175°C. Derating begins at TJ > 150°C per the Safe Operating Area (SOA) curve; sustained operation above 165°C requires active thermal monitoring and reduced current limits to ensure long-term reliability.
Is the drain tab truly electrically isolated in the FullPak package?
Yes-the TO-220 FullPak construction uses a molded epoxy barrier that isolates the drain metal tab from the internal leadframe and pins. This provides 2.5 kV RMS isolation between drain and source/gate terminals, verified per UL 60950-1 and IEC 60747-5-2 standards.
Can IRFB7437GPBF be used in linear mode (as a pass transistor)?
No-it is not characterized or guaranteed for linear (ohmic) operation. The SOA curve shows only pulsed operation limits; sustained linear use risks thermal runaway due to positive temperature coefficient of RDS(on) and lack of safe linear-region derating data.
Does this part have lead-free and RoHS-compliant packaging?
Yes-IRFB7437GPBF is manufactured with 100% matte tin-plated leads and Pb-free solderable terminations. It complies with RoHS Directive 2011/65/EU and JEDEC J-STD-020 moisture sensitivity level 1 (MSL-1), with unlimited floor life at ≤30°C/60% RH.
IRFB7437GPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®, StrongIRFET™
- Package/Case:
- TO-220-3
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 40 V
- Current - Continuous Drain (Id) @ 25°C:
- 195A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 6V, 10V
- Rds On (Max) @ Id, Vgs:
- 2mOhm @ 100A, 10V
- Vgs(th) (Max) @ Id:
- 3.9V @ 150µA
- Gate Charge (Qg) (Max) @ Vgs:
- 225 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 7330 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220AB
IRFB7437GPBF FAQ
1.How can I place an order for IRFB7437GPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRFB7437GPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRFB7437GPBF reliable?
The price and inventory of IRFB7437GPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFB7437GPBF is usually 5 days.
3.What payment methods are accepted for IRFB7437GPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFB7437GPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRFB7437GPBF?
IRFB7437GPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRFB7437GPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRFB7437GPBF?
For technical support, including IRFB7437GPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFB7437GPBF requirements.
6.How does Aetrix verify that IRFB7437GPBF is sourced from the original manufacturer or authorized distributors?
All IRFB7437GPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFB7437GPBF meets industry standards.
7.What is the process for return or replacement of IRFB7437GPBF?
All IRFB7437GPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFB7437GPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRFB7437GPBF part is unused and in its original packaging.
Return procedure for IRFB7437GPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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