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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFB7740PBF

Name: IRFB7740PBF
Brand: Infineon Technologies
SKU: IRFB7740PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFB7740PBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IRFB7740PBF.pdf

Description:: MOSFET N-CH 75V 87A TO220AB

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRFB7740PBF from Infineon Technologies is a 75V, 87A N-channel enhancement-mode Power MOSFET in TO-220AB package, optimized for high-current switching in motor drives and DC/DC converters. It delivers 6.0 mΩ typical R_DS(on) at V_GS = 10 V, supports 275 A pulsed drain current, and features enhanced body diode dV/dt (10 V/ns) and dI/dt capability for robust synchronous rectification and half-bridge operation.

For engineers reviewing the IRFB7740PBF datasheet, IRFB7740PBF pinout, IRFB7740PBF application, or IRFB7740PBF equivalent, key selection criteria include its 1.05 °C/W junction-to-case thermal resistance, 160 mJ single-pulse avalanche energy rating, 81 nC total gate charge, and validated performance in BLDC motor inverters and OR-ing power switches under 175°C junction temperature.

Technical Context

This HEXFET® device uses planar stripe cell structure with optimized gate oxide and body diode design to achieve high dV/dt immunity and low reverse recovery charge (Q_rr = 46 nC at 25°C). Its dynamic parameters-including 27 nC gate-to-drain charge (Q_gd) and 4650 pF input capacitance-are characterized across 0–60 V V_DS for resonant-mode and hard-switching topologies.

The MOSFET operates with gate threshold voltage of 2.1–3.7 V and exhibits stable R_DS(on) temperature coefficient (0.05 V/°C), enabling predictable conduction loss scaling from –55°C to +175°C. Avalanche ruggedness is thermally limited and verified per unclamped inductive test (UIS) with L = 0.117 mH and I_AS = 52 A.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	75 V - Maximum blocking voltage before avalanche onset; enables use in 48 V bus systems with margin.
R_DS(on) typ.	6.0 mΩ at V_GS = 10 V, I_D = 52 A - Defines conduction loss of ~3.2 W at 87 A continuous, critical for thermal management in high-power inverters.
I_D @ T_C = 25°C	87 A - Continuous drain current rating at case temperature 25°C; defines maximum steady-state output capability in heatsink-mounted designs.
E_AS	160 mJ (single-pulse) - Energy-handling capacity during unclamped inductive switching; determines safe operating area in motor drive fault conditions.
Q_g	81 nC typ. - Total gate charge required for full turn-on; directly impacts gate driver power and switching speed in 100 kHz+ SMPS.
R_θJC	1.05 °C/W - Junction-to-case thermal resistance; enables accurate junction temperature prediction when mounted on standard heatsinks with thermal interface material.
V_SD	1.2 V max at I_S = 52 A - Forward voltage of integrated body diode; affects efficiency in synchronous rectifier and freewheeling applications.

Pinout & Package

IRFB7740PBF is housed in a through-hole TO-220AB package with isolated tab (drain-connected), suitable for mechanical mounting to heatsinks with electrical isolation. The three-terminal configuration supports high-current PCB layouts with minimal parasitic inductance.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control electrode	Receives 10 V logic-level signal to fully enhance channel; 2.0 Ω internal gate resistance limits ringing and EMI in fast-switching circuits.
D (Drain)	High-side power terminal	Connected to heatsink tab; carries full load current and withstands 75 V blocking; requires isolation when heatsink is grounded.
S (Source)	Reference and return path	Serves as common reference for gate drive and current sensing; low-inductance source connection essential for stable dI/dt performance.

Key Features

Feature	Design Value
Enhanced body diode dV/dt capability	10 V/ns at T_J = 175°C - Prevents false turn-on during high-speed commutation in half-bridge configurations.
Fully characterized avalanche SOA	241 mJ E_AS (L = 1 mH, I_AS = 22 A) - Enables reliable operation in unclamped inductive loads without external snubbers.
Low Q_gd/Q_g ratio	27 nC / 81 nC = 0.33 - Reduces Miller effect and improves controllability during hard switching, especially in LLC resonant converters.
Lead-free, RoHS-compliant construction	Meets IPC-J-STD-020 moisture sensitivity level 1 - Eliminates pre-bake requirements and supports automated through-hole assembly.

Applications

Brushed Motor Drive

BLDC Inverter Stage

Use Scenario: H-bridge control of 24–48 V DC motors in power tools and industrial actuators.

IC Role / Device Role / Timing Role: High-side and low-side switching element in dual-MOSFET half-bridge; handles bidirectional current up to 87 A peak.

Use Value: 6.0 mΩ R_DS(on) minimizes I²R losses during PWM-driven stall conditions, extending battery runtime by >8% versus 10 mΩ alternatives.

Use Scenario: Three-phase inverter stage in 48 V e-bike or scooter motor controllers.

IC Role / Device Role / Timing Role: Low-side switch in 6-step commutation; synchronized with gate drivers for <60 ns dead-time control.

Use Value: 10 V/ns body diode dV/dt rating prevents shoot-through during phase current reversal, eliminating need for external anti-parallel diodes.

Synchronous Rectification

OR-ing Power Switch

Use Scenario: Secondary-side switching in 48 V–12 V isolated DC/DC converters for telecom and server PSUs.

IC Role / Device Role / Timing Role: Active replacement of Schottky diode in forward/flyback topology; driven by controller-synchronized gate signal.

Use Value: 1.2 V V_SD and 46 nC Q_rr reduce conduction and recovery losses by 35% compared to 45 V Schottky diodes at 50 A load.

Use Scenario: Redundant 48 V power supply combining in datacom rack systems.

IC Role / Device Role / Timing Role: Unidirectional power path switch with reverse-current blocking; controlled via external OR-ing controller.

Use Value: 75 V V_DSS and 275 A I_DM support hot-swap insertion and transient overcurrent events without latch-up or thermal runaway.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP75NF75	75 V V_DSS, 75 A I_D, 7.5 mΩ R_DS(on), TO-220 package	Lower current rating and higher R_DS(on); reduced avalanche energy (120 mJ)	Acceptable for lower-power brushed motor drives but not recommended for 87 A continuous BLDC inverters.
IXTH86N75L2	75 V V_DSS, 86 A I_D, 6.2 mΩ R_DS(on), TO-247 package	Higher thermal resistance (0.35 °C/W R_θJC), larger footprint, no lead-free exemption	Better for ultra-high-efficiency 100 kHz+ resonant converters but requires redesign of heatsink and PCB layout.

Compared with STP75NF75 and IXTH86N75L2, IRFB7740PBF offers optimal balance of low R_DS(on), proven avalanche ruggedness, and TO-220AB compatibility-making it preferred for cost-sensitive, high-reliability motor drive and OR-ing designs where board space and thermal interface simplicity are critical.

Availability

IRFB7740PBF is available at Aetrix Electronics and suitable for brushed motor drives, BLDC inverters, and OR-ing power switches requiring stable component supply across automotive aftermarket, industrial automation, and telecom infrastructure programs.

Supply support for IRFB7740PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, sensor, and automotive ICs, with leadership in silicon-based power devices since the 1990s.

This part belongs to the StrongIRFET™ HEXFET® family, engineered specifically for high-current, high-ruggedness switching in motor control, power conversion, and redundant power architectures where reliability under repetitive stress is mandatory.

FAQ

What is the maximum allowable gate-to-source voltage for IRFB7740PBF?

The absolute maximum V_GS rating is ±20 V. Operation beyond this risks irreversible gate oxide breakdown. For reliable long-term performance, gate drive should be clamped to 15 V maximum with transient suppression, especially in noisy motor drive environments where ringing may exceed steady-state levels.

Can IRFB7740PBF be used in parallel configurations?

Yes-its positive R_DS(on) temperature coefficient (0.05 V/°C) ensures inherent current sharing. Successful parallel operation requires matched gate drive impedance, symmetrical PCB layout, and individual source resistors (0.01 Ω) for current sensing and stability. Thermal coupling between devices must also be minimized to avoid thermal runaway.

Is IRFB7740PBF suitable for 48 V automotive battery systems?

It meets 48 V system requirements for nominal voltage and surge tolerance, but is not AEC-Q101 qualified. For non-safety-critical auxiliary loads (e.g., HVAC blowers, seat controls), it is widely deployed; however, safety-critical ADAS or powertrain functions require AEC-Q101-certified alternatives like IPB070N15N3.

What is the recommended minimum gate resistor value for 100 kHz switching?

A 10 Ω gate resistor is recommended to limit peak gate current while maintaining <60 ns rise time. Lower values (<5 Ω) increase EMI risk and gate driver stress; higher values (>22 Ω) degrade switching speed and increase switching losses. Layout-dependent parasitic inductance must be minimized to prevent oscillation.

IRFB7740PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: StrongIRFET™

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Last Time Buy

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 75 V

Current - Continuous Drain (Id) @ 25°C:: 87A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 6V, 10V

Rds On (Max) @ Id, Vgs:: 7.3mOhm @ 52A, 10V

Vgs(th) (Max) @ Id:: 3.7V @ 100µA

Gate Charge (Qg) (Max) @ Vgs:: 122 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 4650 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 143W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

IRFB7740PBF FAQ

1.How can I place an order for IRFB7740PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFB7740PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFB7740PBF reliable?

The price and inventory of IRFB7740PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFB7740PBF is usually 5 days.

3.What payment methods are accepted for IRFB7740PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFB7740PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFB7740PBF?

IRFB7740PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFB7740PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFB7740PBF?

For technical support, including IRFB7740PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFB7740PBF requirements.

6.How does Aetrix verify that IRFB7740PBF is sourced from the original manufacturer or authorized distributors?

All IRFB7740PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFB7740PBF meets industry standards.

7.What is the process for return or replacement of IRFB7740PBF?

All IRFB7740PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFB7740PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFB7740PBF part is unused and in its original packaging.

Return procedure for IRFB7740PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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