Infineon Technologies IRFB7787PBF

Overview

IRFB7787PBF from Infineon Technologies is a 75V, 76A N-channel enhancement-mode HEXFET® Power MOSFET in TO-220AB package, optimized for high-current switching in motor drives and DC/DC converters. It delivers 6.9 mΩ typical R_DS(on) at V_GS = 10 V, supports 280 A pulsed drain current, and features enhanced body diode dV/dt (10 V/ns) and dI/dt capability for robust synchronous rectification and half-bridge operation in battery-powered inverters.

For engineers reviewing the IRFB7787PBF datasheet, IRFB7787PBF pinout, IRFB7787PBF application, or IRFB7787PBF equivalent, key selection criteria include its 75 V V_DS, 6.9 mΩ R_DS(on), 73 nC total gate charge, avalanche energy rating (144 mJ single-pulse), and TO-220AB thermal performance (R_θJC = 1.2 °C/W).

Technical Context

This MOSFET employs planar silicon technology with optimized cell layout to achieve low conduction loss and high dynamic ruggedness. Its fully characterized SOA includes unclamped inductive switching limits up to 209 mJ (E_AS) under defined test conditions (L = 1 mH, I_AS = 20 A, V_GS = 10 V), and it sustains 10 V/ns peak diode recovery dv/dt at T_J = 175 °C.

The device integrates a fast, low-Q_rr body diode (Q_rr = 42 nC at 25 °C, 61 nC at 125 °C) with 33 ns reverse recovery time, enabling efficient operation in resonant topologies and OR-ing applications where reverse recovery stress must be minimized.

Key Specifications

Pinout & Package

IRFB7787PBF uses the industry-standard TO-220AB package with isolated tab (drain-connected), offering mechanical robustness and direct heatsink mounting. The three-terminal configuration supports high-current PCB routing with minimal parasitic inductance.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with STP75NF75 and IXTP75N10P, IRFB7787PBF offers the lowest R_DS(on) in the 75 V class, enabling highest efficiency in thermally demanding motor drives and synchronous rectifiers, while maintaining compatibility with standard TO-220 footprint and gate drive voltages.

Availability

IRFB7787PBF is available at Aetrix Electronics and suitable for brushed motor drives, BLDC inverter stages, synchronous rectification circuits, and OR-ing power paths requiring stable component supply across industrial and embedded OEM programs.

Supply support for IRFB7787PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, automotive, and industrial control solutions, with core expertise in silicon and wide-bandgap power devices.

This device belongs to the StrongIRFET™ HEXFET® family, engineered for high-current, high-ruggedness switching in motor control, power conversion, and redundant power architectures where reliability under repetitive avalanche and fast diode recovery is critical.

FAQ

What is the maximum allowable gate-to-source voltage for IRFB7787PBF?

The absolute maximum V_GS is ±20 V per datasheet Section "Absolute Maximum Ratings." Operation beyond ±20 V risks permanent gate oxide damage. Recommended gate drive is +10 V to +15 V for full enhancement and –5 V to –10 V for fast turn-off; a 15 V clamp is advised for robustness in noisy environments.

Can IRFB7787PBF be used in parallel configurations?

Yes-its positive R_DS(on) temperature coefficient (0.06 %/°C) ensures inherent current sharing. For stable paralleling, match gate resistors (≤2 Ω tolerance), use symmetrical PCB layout with Kelvin source connections, and limit mismatched thermal gradients to <5 °C between devices to prevent current hogging above 60 A per device.

Does IRFB7787PBF require a gate resistor, and what value is recommended?

A series gate resistor is mandatory to dampen ringing and limit peak gate current. For 46 A switching at 50 kHz, a 10–22 Ω resistor balances switching speed (t_r/t_f ≈ 48/39 ns) and EMI; values below 5 Ω increase risk of oscillation and overshoot, especially with long gate traces or non-optimized drivers.

How does the body diode performance compare to discrete Schottky diodes in synchronous rectification?

Its body diode achieves 1.2 V V_SD at 46 A and 33 ns t_rr, outperforming most 45 V Schottky diodes in reverse recovery ruggedness (10 V/ns dv/dt) and thermal robustness (T_J = 175 °C). However, forward voltage is higher than SiC Schottkys-use only where efficiency gain from reduced Q_rr outweighs V_F penalty.