Infineon Technologies IRFBA1404

Overview

IRFBA1404 from Infineon Technologies (formerly International Rectifier) is an N-channel enhancement-mode silicon power MOSFET in TO-220AB package, rated for 40V V_DS, 140A continuous drain current at T_C = 25°C, and 4.0 mΩ typical R_DS(on) at V_GS = 10V. It serves as a high-current synchronous rectifier or primary-side switch in DC-DC converters and motor drive half-bridges.

For engineers reviewing the IRFBA1404 datasheet, IRFBA1404 pinout, IRFBA1404 application, or IRFBA1404 equivalent, key selection criteria include its low on-resistance at standard gate drive, thermal performance in TO-220AB mounting, SOA compliance under repetitive avalanche conditions, and suitability for 12V/24V industrial power stages requiring <150A peak conduction.

Technical Context

This MOSFET employs planar stripe cell geometry with optimized gate oxide thickness and doped polysilicon gate to achieve stable threshold voltage (V_GS(th) = 2.0–4.0V) and low gate charge (Q_g = 120 nC typ). Its body diode exhibits 55 ns reverse recovery time (t_rr) and 120 A peak reverse recovery current (I_RRM) under hard-switched conditions.

The device supports 100% UIS-rated avalanche energy (E_AS = 520 mJ at T_J = 25°C), enabling robust operation in inductive switching circuits without external snubbers. Thermal resistance from junction-to-case is 0.45°C/W, verified under 1-in² 2-oz copper heatsink conditions.

Key Specifications

Pinout & Package

IRFBA1404 uses a TO-220AB package with three leads: Drain (tab), Source (pin 1), and Gate (pin 2). The metal tab is electrically connected to the Drain and must be isolated from heatsink unless system topology permits common-drain configuration.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 40V power MOSFET applications.

Compared with STP140NF4LK and IXTP140N04T2, IRFBA1404 offers balanced trade-offs: mid-range R_DS(on) and gate charge, highest E_AS, and standard TO-220AB mechanical compatibility-making it optimal for ruggedized 12V/24V industrial power stages where reliability trumps marginal efficiency gains.

Availability

IRFBA1404 is available at Aetrix Electronics and suitable for DC-DC converters, automotive starter systems, BLDC motor inverters, and high-current power distribution switches requiring stable component supply across multi-year production cycles.

Supply support for IRFBA1404 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.

The IRFBA1404 belongs to Infineon's HEXFET Generation 3 power MOSFET product line, engineered for high-current, low-voltage switching in automotive and industrial power conversion where thermal robustness and avalanche survivability are critical.

FAQ

Is IRFBA1404 suitable for paralleling multiple devices to increase current capacity?

Yes-IRFBA1404 features positive temperature coefficient of R_DS(on), enabling inherently stable current sharing when paralleled. Designers must match gate drive loop inductance and use Kelvin source connections to avoid imbalance. Derating total current by 15% per additional device is recommended for thermal margin.

What is the maximum safe operating temperature for continuous operation?

The absolute maximum junction temperature is 175°C, but continuous operation above 150°C degrades long-term reliability. For 140A continuous current, case temperature must be maintained ≤100°C using ≥1-in² 2-oz copper heatsink with thermal interface material (TIM) and forced airflow ≥200 LFM.

Does IRFBA1404 require a gate resistor for protection?

Yes-a series gate resistor (typically 5–22 Ω) is required to dampen ringing, limit peak gate current, and control dv/dt during switching transitions. Values below 5 Ω risk oscillation; above 47 Ω causes excessive switching loss and delayed turn-off in high-frequency applications.

Can IRFBA1404 be used in linear mode (as a pass transistor)?

No-it is not characterized or guaranteed for linear (saturation) operation. SOA curves are provided only for switching conditions. Linear use risks localized thermal runaway due to non-uniform current distribution across the die, even with heatsinking.