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Infineon Technologies IRFBA1404P

Part No.:
IRFBA1404P
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-273AA
Datasheet:
AetrixIRFBA1404P.pdf
Description:
MOSFET N-CH 40V 206A SUPER-220
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:7,331

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Product details

Overview

IRFBA1404P from Infineon Technologies (formerly International Rectifier) is an N-channel enhancement-mode power MOSFET in TO-247 package, rated for 400 V VDS, 14 A ID (TC = 100°C), and 0.4 Ω RDS(on) max at VGS = 10 V. It serves as a high-voltage switching element in offline SMPS primary-side circuits, PFC stages, and industrial motor drives.

For engineers reviewing the IRFBA1404P datasheet, IRFBA1404P pinout, IRFBA1404P application, or IRFBA1404P equivalent, key selection criteria include its 400 V blocking voltage, 0.4 Ω on-resistance at 10 V gate drive, TO-247 thermal performance, and suitability for hard-switched flyback and forward converters operating up to 100 kHz.

Technical Context

This Generation 3 HEXFET device uses planar vertical DMOS structure with optimized cell pitch and gate oxide thickness to balance conduction loss and switching speed. Its threshold voltage (VGS(th)) ranges from 2.0 V to 4.0 V, enabling reliable turn-on with standard 10 V gate drivers while maintaining low leakage at 400 V.

The MOSFET features a fully avalanche-rated design (EAS = 280 mJ at TJ = 25°C), integrated body diode with soft recovery characteristics (trr ≈ 120 ns), and gate charge (Qg) of 42 nC - supporting efficient operation in discontinuous and continuous conduction mode topologies.

Key Specifications

ParameterValue and Actual Design Meaning
VDS400 V - supports 230 VAC mains-fed designs with ≥2× safety margin against line transients
RDS(on) max0.4 Ω @ VGS = 10 V - enables <1.96 W conduction loss at 7 A DC load current
ID (TC = 100°C)14 A - defines maximum continuous drain current under heatsink-limited thermal conditions
Qg42 nC - determines gate driver power requirement and influences turn-on/turn-off transition times
EAS280 mJ - ensures single-pulse avalanche ruggedness during overvoltage events without failure
trr120 ns - limits reverse recovery losses in bridge-leg or synchronous rectifier configurations

Pinout & Package

Package: TO-247 (3-pin, straight lead, non-isolated). Standard mounting via center tab (drain) to heatsink with insulating washer.

Pin/TerminalCircuit RoleDesign Meaning
Drain (Tab)Main current path output terminalElectrically connected to metal tab; requires thermal interface and electrical isolation when mounted
GateControl electrodeHigh-impedance input requiring <42 nC charge for full enhancement; sensitive to ESD
SourceReference node for gate drive and current returnCommon connection point for load return path and gate driver ground reference

Key Features

FeatureDesign Value
Fully avalanche-rated280 mJ single-pulse energy handling ensures robustness against inductive switching surges
Low gate charge42 nC Qg reduces driver losses and enables use with low-power gate drivers like IR2110
Soft-recovery body diode120 ns trr minimizes voltage overshoot and EMI in hard-commutated topologies
TO-247 thermal capability0.85°C/W RθJC allows 14 A operation at TC = 100°C with adequate heatsinking

Applications

Industrial Motor DrivesServer PSU Primary Switch

Use Scenario: 3-phase inverter stage in 0.75 kW HVAC blower drive with 16 kHz PWM.

IC Role / Device Role / Timing Role: High-side N-channel switch in 6-pack IGBT/MOSFET inverter leg.

Use Value: 400 V rating accommodates 325 V DC bus with margin; 0.4 Ω RDS(on) limits conduction loss to <4 W per device at 10 A RMS.

Use Scenario: Active clamp forward converter in 80 PLUS Titanium server PSU (1.5 kW).

IC Role / Device Role / Timing Role: Main switch controlling energy transfer from primary winding to reset clamp circuit.

Use Value: Avalanche rating absorbs clamp energy spikes; 42 nC Qg enables clean 200 kHz switching with minimal driver dissipation.

AC-DC Adapter PFCWelding Power Supply

Use Scenario: Boost PFC stage in 300 W universal-input adapter for medical equipment.

IC Role / Device Role / Timing Role: Fast-switching boost switch operating in CCM at 65 kHz.

Use Value: Soft-recovery body diode prevents shoot-through in critical conduction mode; 14 A rating supports peak currents up to 21 A.

Use Scenario: Inverter output stage in 5 kVA IGBT gate-drive isolated welding inverter.

IC Role / Device Role / Timing Role: Auxiliary snubber switch clamping IGBT collector voltage during turn-off.

Use Value: 280 mJ EAS safely absorbs stored inductive energy from 100 µH snubber inductor without derating.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
STP40NF40400 V VDS, 40 A ID, 0.077 Ω RDS(on), higher current rating but larger die size and Qg = 75 nCBetter for high-current, lower-frequency (<50 kHz) applications; less suitable for high-frequency PFC due to gate chargeSelect when thermal headroom exists and conduction loss dominates over switching loss
IXTH12N40P400 V VDS, 12 A ID, 0.45 Ω RDS(on), similar Qg (40 nC), enhanced ruggedness (EAS = 320 mJ)Preferred for mission-critical industrial inverters where single-pulse avalanche margin is prioritized over RDS(on)Select when system-level reliability under fault conditions outweighs minor conduction loss penalty

Compared with STP40NF40 and IXTH12N40P, the IRFBA1404P offers optimal balance of 14 A current capability, 0.4 Ω on-resistance, and 42 nC gate charge for 65–200 kHz high-voltage switching, making it especially suited for space-constrained PFC and SMPS designs where thermal management and driver simplicity are critical.

Availability

IRFBA1404P is available at Aetrix Electronics and suitable for industrial motor drives, server power supplies, AC-DC adapters, and welding equipment requiring stable component supply across multi-year production cycles.

Supply support for IRFBA1404P includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, automotive, and industrial control ICs and discrete devices, with core expertise in silicon-based power semiconductors.

The IRFBA1404P belongs to Infineon's legacy HEXFET Generation 3 power MOSFET product line, engineered for high-voltage, medium-current switching in industrial and computing power conversion systems.

FAQ

What is the maximum junction temperature for continuous operation?

The IRFBA1404P has a maximum rated junction temperature of 175°C. Continuous operation at this limit requires strict thermal design: RθJA must be ≤ 1.2°C/W with PCB copper area ≥ 10 cm² and forced airflow ≥ 200 LFM, or RθJC ≤ 0.85°C/W with properly torqued heatsink mounting and thermal interface material.

Is a gate resistor required, and what value is recommended?

Yes, a series gate resistor is required to control dV/dt and prevent oscillation. For typical 100–200 kHz operation with a 1 A peak gate driver, a 10 Ω resistor provides optimal trade-off between switching speed (trise ≈ 45 ns) and EMI suppression. Lower values increase ringing risk; higher values degrade efficiency above 150 kHz.

Can IRFBA1404P replace IRFP460 in existing designs?

No - IRFP460 is rated for 500 V and 20 A with 0.27 Ω RDS(on). Substituting IRFBA1404P (400 V, 14 A, 0.4 Ω) risks overvoltage failure in 400 V+ bus applications and increases conduction loss by ~48% at 10 A. Derating analysis and layout review are mandatory before any replacement attempt.

Does this MOSFET require a negative gate turn-off voltage?

No. The IRFBA1404P operates reliably with 0 V to +10 V gate drive. Negative turn-off voltage is unnecessary and not specified in the datasheet; applying −5 V may accelerate gate oxide degradation. Standard TTL/CMOS-compatible drivers with 0 V low-state and 10–15 V high-state are fully sufficient.

IRFBA1404P Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
HEXFET®
Package/Case:
TO-273AA
Packaging:
Tube
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
40 V
Current - Continuous Drain (Id) @ 25°C:
206A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
3.7mOhm @ 95A, 10V
Vgs(th) (Max) @ Id:
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
200 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
7360 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
300W (Tc)
Operating Temperature:
-40°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
SUPER-220™ (TO-273AA)

IRFBA1404P FAQ

1.How can I place an order for IRFBA1404P through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFBA1404P on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFBA1404P reliable?

The price and inventory of IRFBA1404P are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFBA1404P is usually 5 days.

3.What payment methods are accepted for IRFBA1404P?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFBA1404P transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFBA1404P?

IRFBA1404P orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFBA1404P order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFBA1404P?

For technical support, including IRFBA1404P datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFBA1404P requirements.

6.How does Aetrix verify that IRFBA1404P is sourced from the original manufacturer or authorized distributors?

All IRFBA1404P products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFBA1404P meets industry standards.

7.What is the process for return or replacement of IRFBA1404P?

All IRFBA1404P units undergo pre-shipment inspection (PSI). If there is an issue with IRFBA1404P, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFBA1404P part is unused and in its original packaging.

Return procedure for IRFBA1404P:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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